• Korean Journal of Materials Research
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• v.29 no.7
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• pp.456-462
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• 2019

ZnO thin-films are grown on a p-Si(111) substrate by RF sputtering. The effects of growth temperature and $O_2$ mixture ratio on the ZnO films are investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and room-temperature photoluminescence (PL) measurements. All the grown ZnO thin films show a strong preferred orientation along the c-axis, with an intense ultraviolet emission centered at 377 nm. However, when $O_2$ is mixed with the sputtering gas, the half width at half maximum (FWHM) of the XRD peak increases and the deep-level defect-related emission PL band becomes pronounced. In addition, an n-ZnO/p-Si heterojunction diode is fabricated by photolithographic processes and characterized using its current-voltage (I-V) characteristic curve and photoresponsivity. The fabricated n-ZnO/p-Si heterojunction diode exhibits typical rectifying I-V characteristics, with turn-on voltage of about 1.1 V and ideality factor of 1.7. The ratio of current density at ${\pm}3V$ of the reverse and forward bias voltage is about $5.8{\times}10^3$, which demonstrates the switching performance of the fabricated diode. The photoresponse of the diode under illumination of chopped with 40 Hz white light source shows fast response time and recovery time of 0.5 msec and 0.4 msec, respectively.

• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.40-45
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• 2008

We present the effect of Ga-doping on the electrical, structural and optical properties of ZnO layers with a thickness of ${\sim}500nm$ deposited on glass substrates. Polycrystalline ZnO and Ga-doped ZnO (GZO) layers were deposited by radio frequency (rf) magnetron sputtering at room temperature. Based on the X-ray diffraction (XRD) and transmission electron microscopy (TEM) data, the crystalline quality of Ga-doped ZnO film was improved and GZO film has a preferred orientation along with the (002) crystal direction. The transmittance of the GZO film was enhanced by 10% in the visible region from that of the ZnO film. From photoluminescence (PL) data, the ratio of intensity of near band edge (NBE) emission to deep level (DL) emission was as high as 2.65:1 and 1.27:1 in the GZO and ZnO films, respectively. The res istivities of GZO and ZnO films were measured to be 1.27 and 1.61 $\Omega{\cdot}cm$, respectively. The carrier concentrations of ZnO and GZO film were approximately 1018 and 1020 $cm^2$/Vs, respectively. Based on our experimental results, the Ga-doping improves the electrical, structural and optical properties of ZnO film with potential application.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.168-168
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• 2012

Al doped ZnO (AZO)는 태양전지, 평판 디스플레이, OELD 등 광전자 소자에 적용되는 투명전도막용 재료인 ITO의 대체 재료로서 최근에 가장 각광받고 있는 물질이다. 하지만, $2.5{\times}10^{-4}{\Omega}{\cdot}cm$의 낮은 비저항과 90% 이상의 투과도를 갖는 ITO의 비해 AZO의 특성은 아직 부족한 상황이다. 수십 년간 많은 연구자들에 의해 다양한 제조 방법과 공정 조건들로 전기적, 광학적 특성을 향상시키기 위한 노력들이 진행되어 왔다. 하지만 실리콘 반도체와는 달리 II-VI족 물질의 정확한 근본적인 원리는 아직 불분명한 상태이다. 지금까지 AZO의 특성 향상의 원인을 결정립 크기, 주상구조의 우선 방위, 결정성, Zn-O 구조내의 산소 결핍 등의 메커니즘으로 설명해 왔다. 하지만, 본 연구에서는 지금까지 제안된 상기 요인의 변화 없이 전기적, 광학적 특성을 향상시키는 것이 짧은 열처리만으로도 가능했다. AZO 박막의 전기적, 광학적 특성에 큰 영향을 미치는 보다 근본적인 원인은 도핑 효율이다. ZnO 내에 도핑된 Al의 양보다 실제로로 활성화된 Al의 비율을 올리는 것이 중요하다. 본 연구에서 구조적, 조성적 변화 없이 도핑효율을 8.9%에서 66.7%까지 증가시켰으며, 이동도는 박막 표면의 및 결정립계 사이의 과잉산소를 줄임으로서 optical phonon scattering 감소를 통하여 증가시킬 수 있고, 이러한 과잉산소의 감소는 deep level emission을 감소시킴으로서 투과도 증가에도 영향을 준다. 본 연구에서 짧은 열처리를 통해 구조적 변화 없이 도핑효율의 증가만으로 $4.8{\times}10^{-4}{\Omega}{\cdot}cm$의 비저항과 90%의 투과도를 갖는 AZO 박막을 제조하였다.

• Journal of the Korean Ceramic Society
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• v.41 no.5
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• pp.359-363
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• 2004

Photoluminescence excitation (PLE) spectroscopy studies were performed for anodically etched porous Zn, which exhibited a PL in the blue/violet spectral range peaking at 420 nm (2.95 eV), and oxidzed porous Zn at 380$^{\circ}C$ for 10 min and 12 h. A broad absorption band was observed at 4.07 eV (305 nm), 3.49 (355 nm) for anodically etched porous Zn. In contrast, both the oxidized porous Zn and sintered ZnO exhibited an almost identical one broad absorption band at 3.85 eV (322 nm), when PLE spectra were measured at 378 nm (3.28 eV). The oxidized porous Zn and sintered ZnO, which displayed both UV and green luminescence band, showed an additional absorption band at 389 nm (3.19 eV) and 467 nm (2.66 eV). In contrast, no significant absorption band was detected for a 10-min oxidized porous Zn, which only displayed one UV luminescence void of deep-level luminescence. These absorption bands determined by PLE studies enabled a clear understanding of an emission mechanism for the UV and green luminescence from ZnO.

• Journal of Powder Materials
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• v.22 no.6
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• pp.391-395
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• 2015

We report on the successful fabrication of ZnO nanorod (NR)/polystyrene (PS) nanosphere hybrid nanostructure by combining drop coating and hydrothermal methods. Especially, by adopting an atomic layer deposition method for seed layer formation, very uniform ZnO NR structure is grown on the complicated PS surfaces. By using zinc nitrate hexahydrate $[Zn(NO_3)_2{\cdot}6H_2O]$ and hexamine $[(CH_2)_6N_4]$ as sources for Zn and O in hydrothermal process, hexagonal shaped single crystal ZnO NRs are synthesized without dissolution of PS in hydrothermal solution. X-ray diffraction results show that the ZnO NRs are grown along c-axis with single crystalline structure and there is no trace of impurities or unintentionally formed intermetallic compounds. Photoluminescence spectrum measured at room temperature for the ZnO NRs on flat Si and PS show typical two emission bands, which are corresponding to the band-edge and deep level emissions in ZnO crystal. Based on these structural and optical investigations, we confirm that the ZnO NRs can be grown well even on the complicated PS surface morphology to form the chestnut-shaped hybrid nanostructures for the energy generation and storage applications.

• Korean Journal of Materials Research
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• v.28 no.2
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• pp.101-107
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• 2018

Li-incorporated ZnO thin films were deposited by using ultrasonic-assisted spray pyrolysis deposition (SPD) system. To investigate the effect of Li-incorporation on the performance of ZnO thin films, the structural, electrical, and optical properites of the ZnO thin films were analyzed by means of X-ray diffraction (XRD), field-emssion scanning electron microscopy (FE-SEM), Hall effect measurement, and UV-Vis spectrophotometry with variation of the Li concentraion in the ZnO sources. Without incorporation of Li element, the ZnO surface showed large spiral domains. As the Li content increases, the size of spiral domains decreased gradually, and finally formed mixed small grain and one-dimensional nanorod-like structures on the surface. This morphological evolution was explained based on an anti-surfactant effect of Li atoms on the ZnO growth surface. In addition, the Li-incorporation changed the optical and electrical properties of the ZnO thin films by modifying the crystalline defect structures by doping effects.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.413-416
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• 2004

In this study, zinc oxide(ZnO) having large misfit(18.2%) with sapphire was tried to be grown on very thin nitride buffer layers. For the creation of various kinds of nitride buffer layer, sapphire surface was modified by an irradiation of nitrogen ion beam with low energy generated from stationary plasma thruster(SPT) at room temperature. After the irradiation of ion beam, Al-N and Al-O-N bonding was identified to be formed as nitride buffet layers. Surface morphology was measured by AFM and then ZnO growth was followed by pulsed laser deposition(PLD). Their properties are analyzed by XRD, AFM, TEM, and PL. We observed that surface morphology was improved and deep level emission related to defects was almost vanished in PL spectra from the ZnO grown on nitride buffer layer.

• Korean Journal of Remote Sensing
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• v.39 no.6_3
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• pp.1679-1692
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• 2023

South Korea is a country that emits a large amount of pollutants as a result of population growth and industrial development and is also severely affected by transboundary air pollution due to its geographical location. As pollutants from both domestic and foreign sources contribute to air pollution in Korea, the location of air pollutant emission sources is crucial for understanding the movement and distribution of pollutants in the atmosphere and establishing national-level air pollution management and response strategies. Based on this background, this study aims to effectively acquire spatial information on domestic and international air pollutant emission sources, which is essential for analyzing air pollution status, by utilizing high-resolution optical satellite images and deep learning-based image segmentation models. In particular, industrial parks and quarries, which have been evaluated as contributing significantly to transboundary air pollution, were selected as the main research subjects, and images of these areas from multi-purpose satellites 3 and 3A were collected, preprocessed, and converted into input and label data for model training. As a result of training the U-Net model using this data, the overall accuracy of 0.8484 and mean Intersection over Union (mIoU) of 0.6490 were achieved, and the predicted maps showed significant results in extracting object boundaries more accurately than the label data created by course annotations.

• Ocean and Polar Research
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• v.34 no.2
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• pp.239-251
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• 2012

The food web dynamics in a coastal ecosystem of Korea were predicted with Ecosim, a trophic flow model, under various scenarios of primary productivity due to ocean warming and ocean acidification. Changes in primary productivity were obtained from an earth system model 2.1 under A1B scenario of IPCC $CO_2$ emission and replaced for forcing functions on the phytoplankton group during the period between 2020 and 2100. Impacts of ocean acidification on species were represented in the model for gastropoda, bivalvia, echinodermata, crustacean and cephalopoda groups with effect sizes of conservative, medium and large. The model results show that the total biomass of invertebrate and fish groups decreases 5%, 11~28% and 14~27%, respectively, depending on primary productivity, ocean acidification and combined effects. In particular, the blenny group shows zero biomass at 2080. The zooplankton group shows a sudden increase at the same time, and finally reaches twice the baseline at 2100. On the other hand, the ecosystem attributes of the mean trophic level of the ecosystem, Shannon's H and Kempton's Q indexes show a similar reduction pattern to biomass change, indicating that total biomass, biodiversity and evenness shrink dynamically by impacts of climate change. It is expected from the model results that, after obtaining more information on climate change impacts on the species level, this study will be helpful for further investigation of the food web dynamics in the open seas around Korea.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.11-11
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• 2008

ZnO has a very large exciton binding energy (60 meV) as well as thermal and chemical stability, which are expected to allow efficient excitonic emission, even at room temperature. ZnO based electronic devices have attracted increasing interest as the backplanes for applications in the next-generation displays, such as active-matrix liquid crystal displays (AMLCDs) and active-matrix organic light emitting diodes (AMOLEDs), and in solid state lighting systems as a substitution for GaN based light emitting diodes (LEDs). Most of these electronic devices employ the electrical behavior of n-type semiconducting active oxides due to the difficulty in obtaining a p-type film with long-term stability and high performance. p-type ZnO films can be produced by substituting group V elements (N, P, and As) for the O sites or group I elements (Li, Na, and K) for Zn sites. However, the achievement of p-type ZnO is a difficult task due to self-compensation induced from intrinsic donor defects, such as O vacancies (Vo) and Zn interstitials ($Zn_i$), or an unintentional extrinsic donor such as H. Phosphorus (P) doped ZnO thin films were grown on c-sapphire substrates by radio frequency magnetron sputtering with various Ar/ $O_2$ gas ratios. Control of the electrical types in the P-doped ZnO films was achieved by varying the gas ratio with out post-annealing. The P-doped ZnO films grown at a Ar/ $O_2$ ratio of 3/1 showed p-type conductivity with a hole concentration and hole mobility of $10^{-17}cm^{-3}$ and $2.5cm^2/V{\cdot}s$, respectively. X-ray diffraction showed that the ZnO (0002) peak shifted to lower angle due to the positioning of $p^{3-}$ ions with a smaller ionic radius in the $O^{2-}$ sites. This indicates that a p-type mechanism was due to the substitutional Po. The low-temperature photoluminescence of the p-type ZnO films showed p-type related neutral acceptor-bound exciton emission. The p-ZnO/n-Si heterojunction LEO showed typical rectification behavior, which confirmed the p-type characteristics of the ZnO films in the as-deposited status, despite the deep-level related electroluminescence emission.