• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.11a
• /
• pp.378-379
• /
• 2006

CMP(chemical mechanical polishing) process has been attracted as an essential technology of multi-level interconnection. However, the COO(cost of ownership) is very high, because of high consumable cost. Especially, among the consumables, slurry dominates more than 40 %. So, we focused how to reduce the consumption of raw slurry. In this paper, $ZrO_2$, $CeO_2$, and $MnO_2$ abrasives were added de-ionized water (DIW) and pH control as a function of KOH contents. We have investigate the possibility of new abrasive for the oxide CMP application.

• 연구논문집
• /
• s.33
• /
• pp.99-109
• /
• 2003

Recently the utilization of the ozone dissolved de-ionized water(DIW-$O_3$) in semiconductor wet cleaning process and photoresist stripping process to replace the conventional sulfuric acid and hydro peroxide mixture(SPM) method has been studied. In this paper, we propose the water-electrode type ozone generator which has the characteristics of the high concentration and purity to produce the high concentration DIW-$O_3$ for the photoresist strip process in the semiconductor fabrication. The proposed ozone generator has the dual dielectric tube structure of silent discharge type and the water is both used to electrode and cooling water. Through this study, we obtained the results of the 10.3 wt% of ozone gas concentration at the oxygen gas of 0.5 [liter/min.] and the DIW-$O_3$ concentration of 79.5 ppm.. Through the photoresist stripping test using the produced DIW-$O_3$, we confirmed that the photoresist coated on the silicon wafer was removed effectively in the 12 minutes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11a
• /
• pp.185-188
• /
• 2001

Chemical mechanical polishing(CMP) process is widely used for global planarization of inter-metal dielectric (IMD) layer and inter-layer dielectric (ILD) for deep sub-micron technology. However, as the IMD and ILD layer gets thinner, defects such as micro-scratch lead to severe circuit failure, which affect yield. In this paper, for the improvement of CMP Process, deionized water (DIW) pressure, purified $N_2$ (P$N_2$) gas, slurry filter and high spray bar were installed. Our experimental results show that DIW pressure and P$N_2$ gas factors were not related with removal rate, but edge hot-spot of patterned wafer had a serious relation. Also, the filter installation in CMP polisher could reduce defects after CMP process, it is shown that slurry filter plays an important role in determining consumable pad lifetime. The filter lifetime is dominated by the defects. However, the slurry filter is impossible to prevent defect-causing particles perfectly. Thus, we suggest that it is necessary to install the high spray bar of de-ionized water (DIW) with high pressure, to overcome the weak-point of slurry filter. Finally, we could expect the improvements of throughput, yield and stability in the ULSI fabrication process.

• Korean Journal of Materials Research
• /
• v.6 no.4
• /
• pp.379-387
• /
• 1996

본 연구에서는 GaAs 소자제작 및 epi-layer 성장 공정에 있어 이용되어지는 HCI, H3PO4, 탈이온수(de-ionized water:DIW)를 통한 습식제정후 공기중 노출에 따른 오염을 최소화하여 표면상태 변화를 진성적(intrinsic)으로 관찰하고자 모든 세정처리를 아르곤 가스(argon gas)로 분위기가 유지되는 glove box에서 수행하였으며, 표면조성 및 결합상태 변화에 대한 관찰은 X-선 광전자 분광기(X-ray photoelectron spectroscopy)를 통해 이루어졌다. 고진공하에서 GaAs를 벽개하여 관찰함으로써 Ga이 대기중 산소이온과 우선적으로 결합함을 알 수 있었고, 이런 GaAs 표면의 반응성에 대한 고찰을 바탕으로 습식세정에 따른 화학반응 기구가 제시 되어졌다. HCI 및 H3PO4/DIW/HCI처리후 CI-이온의 Ga 이온과의 반응에 의한 Ga-CI결합의 형성과 As 산화물의 높은 용해도에 따른 As 산화물의 완전한 제거 및 식각전 초기(bare)GaAsvyaus에 존재하는 원소(elemental)As 상태의 식각후 잔류가 관찰되어졌다. 또 HCI, H3PO4/DIW/HCI 처리하고 DIW로 세척후 표면상태 변화를 관찰한 결과, DIW처리에 의해 elemental As 상태가 증가함을 알 수 있었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.9
• /
• pp.707-713
• /
• 2001

As the integrated circuit device shrinks to smaller dimensions, chemical mechanical polishing (CMP) process was requirdfo the global planarization of inter-metal dielectric (IMD) layer with free-defect. However, as the IMD layer gest thinner, micro-scratches are becoming as major defects. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Micro-scratches are generated by agglomerated slurry, solidified and attached slurry in pipe line of slurry supply system. To prevent agglomerated slurry particle from inflow, we installed 0.5${\mu}{\textrm}{m}$ point of use (POU) filter, which is depth-type filter and has 80% filtering efficiency for the 1.0${\mu}{\textrm}{m}$ size particle. In this paper, we studied the relationship between defect generation and polished wafer counts to understand the exact efficiency fo the slurry filteration, and to find out the appropriate pad usage. Our experimental results showed that it sis impossible to prevent defect-causing particles perfectly through the depth-type filter. Thus, we suggest that it is necessary to optimize the slurry flow rate, and to install the high spray bar of de-ionized water (DIW) with high pressure, to overcome the weak-point of depth type filter.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11b
• /
• pp.185-188
• /
• 2001

Chemical mechanical polishing(CMP) process is widely used for global planarization of inter-metal dielectric (IMD) layer and inter-layer dielectric (ILD) for deep sub-micron technology. However, as the IMD and ILD layer gets thinner, defects such as micro-scratch lead to severe circuit failure, which affect yield. In this paper, for the improvement of CMP process, deionized water (DIW) pressure, purified $N_2 \; (PN_2)$ gas, slurry filter and high spray bar were installed. Our experimental results show that DIW pressure and $PN_2$ gas factors were not related with removal rate, but edge hot-spot of patterned wafer had a serious relation. Also, the filter installation in CMP polisher could reduce defects after CMP process, it is shown that slurry filter plays an important role in determining consumable pad lifetime. The filter lifetime is dominated by the defects. However, the slurry filter is impossible to prevent defect-causing particles perfectly. Thus, we suggest that it is necessary to install the high spray bar of de-ionized water (DIW) with high pressure, to overcome the weak-point of slurry filter. Finally, we could expect the improvements of throughput, yield and stability in the ULSI fabrication process.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.51 no.5
• /
• pp.191-195
• /
• 2002

Chemical mechanical Polishing (CMP) process is widely used for the global planarization of inter-metal dielectric (IMD) layer and inter-layer dielectric (ILD) for deep sub-micron technology. However, as the IMD and ILD layer gets thinner, defects such as micro-scratch lead to severe circuit failure, which affect yield. In this paper, for the improvement of CMP process, deionized water (DIW) pressure, purified $N_2$ ($PN_2$) gas, point of use (POU) slurry filler and high spray bar (HSB) were installed. Our experimental results show that DW pressure and P$N_2$ gas factors were not related with removal rate, but edge hot-spot of patterned wafer had a serious relation. Also, the filter installation in CMP polisher could reduce defects after CMP process, it is shown that slurry filter plays an important role in determining consumable pad lifetime. The filter lifetime is dominated by the defects. However, the slurry filter is impossible to prevent defect-causing particles perfectly. Thus, we suggest that it is necessary to install the high spray bar of de-ionized water (DIW) with high pressure, to overcome the weak-point of slurry filter Finally, we could expect the improvements of throughput, yield and stability in the ULSI fabrication process.

• Proceedings of the KIEE Conference
• /
• 2006.07a
• /
• pp.601-602
• /
• 2006

Chemical mechanical polishing (CMP) technology has been widely used for global planarization of multi-level interconnection for ULSI applications. However, the cost of ownership and cost of consumables are relatively high because of expensive slurry. In this paper, we studied the mixed abrasive slurry(MAS). In order to save the costs of slurry, the original silica slurry was diluted by de-ionized water (DIW). And then, $ZrO_2$,$CeO_2$, and $MnO_2$ abrasives were added in the diluted slurry in order to promote the mechanical force of diluted slurry. We have also investigate the possibility of mixed abrasive slurry for the oxide CMP application.

• Proceedings of the KIEE Conference
• /
• 2006.07a
• /
• pp.605-606
• /
• 2006

CMP(chemical mechanical polishing) process has been attracted as an essential technology of multi-level interconnection. However, the COO(cost of ownership) is very high, because of high consumable cost. Especially, among the consumables, slurry dominates more than 40 %. So, we focused how to reduce the consumption of raw slurry. In this paper, $ZrO_2$,$CeO_2$, and $MnO_2$ abrasives were added de-ionized water (DIW) and pH control as a function of KOH contents. We have investigate the possibility of new abrasive for the oxide CMP application.

• Proceedings of the KIEE Conference
• /
• 2006.07d
• /
• pp.2233-2234
• /
• 2006

Chemical mechanical polishing (CMP) technology has been widely used for global planarization of multi-level interconnection for ULSI applications. However, the cost of ownership and cost of consumables are relatively high because of expensive slurry. In this paper, we studied the mixed abrasive slurry(MAS). In order to save the costs of slurry, the original silica slurry was diluted by de-ionized water (DIW). And then, $ZrO_2$, $CeO_2$,and $MnO_2$ abrasives were added in the diluted slurry in order to promote the mechanical force of diluted slurry. We have also investigate the possibility of mixed abrasive slurry for the oxide CMP application.