• Journal of the Microelectronics and Packaging Society
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• v.19 no.3
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• pp.77-82
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• 2012

In this paper, the research of IC embedded PCB process is carried out. For embedding chips into PCB, solder-balls on chips were etched out and ABF(Ajinomoto Build-ip Film), prepreg and Cu foil was laminated on that to fabricate 6 layer build-up board. The chip of which solder ball was removed was successfully interconnected with PCB by laser drilling and Cu plating. However, de-lamination phenomenon occurred between chip surface and ABF during reflow and thermal shock. To solve this problem, de-smear and plasma treatment was applied to PI(polyimide) passivation layer on chip surface to improve the surface roughness. The properties of chip surface(PI) was investigated in terms of AFM(Atomic Force Micrometer), SEM and XPS (X-ray Photoelectron Spectroscopy). As results, nano-size anchor was evenly formed on PI surface when plasma treatment was combined with de-smear(NaOH+KMnO4) process and it improved thermal shock reliability ($260^{\circ}C$-10sec solder floating).

• Composites Research
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• v.15 no.3
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• pp.30-38
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• 2002

Fiber Bragg grating(FBG) like other optical fiber sensors also has the merit of embedding capability. To increase their actual value related to embedding capability, this paper reported the reliability and signal characteristics of FBGS embedded in composite laminates. The microphotographs of embedded optical fibers visualized the embedding environments of stripped optical fibers and coated optical fibers. Based on these microphotographs and cure monitoring performed using FBGs, we could understand that the main cause breaking the unique Bragg condition of low-birefrigence FBG were residual stress artier curing and reported the stale of stress/strain of optical fiber quantitatively. The cure monitoring also showed the history of splitting peak of a stripped FBG along cure processing. In addition, we could obtain a transverse insensitive grating(TIG) with ease by recoating a stripped FBG. TIG has good advantage for real-time signal processing.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.10 no.6
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• pp.1180-1185
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• 2009

In this paper, the Low Pass Filter (LPF) using the equivalent circuit of T-junction microstrip line is proposed. And we derived the formulas for lumped-elements of the equivalent circuit of T-junction microstrip line to solve the frequency shift characteristic. T-junction microstrip line is de-embedded by Electromagnetic simulation tool and exact lumped element value of T-junction microstrip line is calculated by the equation of Z-parameter. We can get excellent agreement between lumped-element LPF frequency response and transmission line LPF frequency response.

• Nuclear Engineering and Technology
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• v.46 no.1
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• pp.11-26
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• 2014

The analyses carried out within the Seismic Probabilistic Risk Assessments (SPRAs) of Nuclear Power Plants (NPPs) are affected by significant aleatory and epistemic uncertainties. These uncertainties have to be represented and quantified coherently with the data, information and knowledge available, to provide reasonable assurance that related decisions can be taken robustly and with confidence. The amount of data, information and knowledge available for seismic risk assessment is typically limited, so that the analysis must strongly rely on expert judgments. In this paper, a Dempster-Shafer Theory (DST) framework for handling uncertainties in NPP SPRAs is proposed and applied to an example case study. The main contributions of this paper are two: (i) applying the complete DST framework to SPRA models, showing how to build the Dempster-Shafer structures of the uncertainty parameters based on industry generic data, and (ii) embedding Bayesian updating based on plant specific data into the framework. The results of the application to a case study show that the approach is feasible and effective in (i) describing and jointly propagating aleatory and epistemic uncertainties in SPRA models and (ii) providing 'conservative' bounds on the safety quantities of interest (i.e. Core Damage Frequency, CDF) that reflect the (limited) state of knowledge of the experts about the system of interest.

• Journal of electromagnetic engineering and science
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• v.12 no.1
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• pp.122-127
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• 2012

Post-wall waveguide structures have attracted a great deal of attention for micro- and millimeter-wave applications. One of the waveguide’s applications is a slotted waveguide array. In order to design the slotted array, the characteristics of a slot unit alone on the post-wall waveguide should be investigated. In this paper, a method for extracting the S-parameters of a unit slot is proposed. This simple method requires only two kinds of waveguides: waveguides without a slot unit and waveguides with a slot unit. Three kinds of slot units are fabricated, and the extracted results show a high level of agreement with predicted (simulated) results. With this method, the equivalent slot length can also be found.

• Journal of the Korean Vacuum Society
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• v.8 no.4B
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• pp.536-540
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• 1999

We have developed a refractory WNx self-aligned gate GaAs metal-semiconductor field-effect transistor(MESFET) using $SiO_2$ side-wall process. The MESFET hasa fully ion-implanted, planar, symmetric self-alignment structure, and it is quite suitable for integration. The uniform trans-conductance of 354nS/mm up to Vgs=+0.6V and the saturation current of 171mA/mm were obtained. As high as 43GHz of cut-off frequency hs been realized without any de-embedding of parasitic effects. The refractory WNx self-aligned gate GaAs MESFET technology is one of the most promising candidates for realizing linear power amplifier ICs and multifunction monolithic ICs for use in the digital mobile communication systems such as hand-held phone(HHP), personal communication system (PCS) and wireless local loop(WLL).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.26-28
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• 1996

A high power SiGe HBT has been fabricated using APCVD(Atmospheric Pressure Chemical Vapor Deposition) and its perfermanoe has been analysed. The composition of Ge in the SiGe base was graded from 0% at the emitter-base junction to 20% at the base-collector junction. As a base electrode, titanium disilicide(TiSi$_2$) was used to reduce the extrinsic base resistance. The SiGe HBT with an emitter area of 2$\times$8${\mu}{\textrm}{m}$$^2$typically has a cutoff frequency(f$_{T}$) of 7.0GHz and a maximun oscillation frequency(f$_{max}$) of 16.1GHz with a pad de-embedding. The packaged high power SiGe HBT with an emitter area of 2xBx80${\mu}{\textrm}{m}$$^2$typically shows a cutoff frequency of 4.7GHz and a maximun oscillation frequency of 7.1GHz at Ic of 115mA.A.A.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.35 no.2C
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• pp.155-160
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• 2010

In this paper, we proposed a forensic mark algorithm which can embed the distributor's information at each distribution step to trace the illegal distribution path. For this purpose, the algorithm has to have the high capacity payload for embedding the copyright and user information at each step, and the embedded information at a step should not interfere with the information at other step. The proposed algorithm can trace the multilevel distribution because the forensic mark is generated by digital hologram and embedded in the DWT-SVD domain. For the high capacity embedding, the off-axis hologram is generated from the forensic mark and the hologram is embedded in the HL, LH, HH bands of the DWT to reduce the signal interference. The SVD which is applied the holographic signal enhanced the detection performance and the safety of the forensic mark algorithm. As the test results, this algorithm was able to embed 128bits information for the copyright and user information at each step. In this paper, we can embed total 384bits information for 3 steps and the algorithm is also robust to the JPEG compression.

• Steel and Composite Structures
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• v.51 no.1
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• pp.73-91
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• 2024

This paper has focused on presenting vibration analysis of trapezoidal sandwich plates with a damaged core and FG wavy CNT-reinforced face sheets. A damage model is introduced to provide an analytical description of an irreversible rheological process that causes the decay of the mechanical properties, in terms of engineering constants. An isotropic damage is considered for the core of the sandwich structure. The classical theory concerning the mechanical efficiency of a matrix embedding finite length fibers has been modified by introducing the tube-to-tube random contact, which explicitly accounts for the progressive reduction of the tubes' effective aspect ratio as the filler content increases. The First-order shear deformation theory of plate is utilized to establish governing partial differential equations and boundary conditions for the trapezoidal plate. The governing equations together with related boundary conditions are discretized using a mapping-generalized differential quadrature (GDQ) method in spatial domain. Then natural frequencies of the trapezoidal sandwich plates are obtained using GDQ method. Validity of the current study is evaluated by comparing its numerical results with those available in the literature. After demonstrating the convergence and accuracy of the method, different parametric studies for laminated trapezoidal structure including carbon nanotubes waviness (0≤w≤1), CNT aspect ratio (0≤AR≤4000), face sheet to core thickness ratio (0.1 ≤ ${\frac{h_f}{h_c}}$ ≤ 0.5), trapezoidal side angles (30° ≤ α, β ≤ 90°) and damaged parameter (0 ≤ D < 1) are carried out. It is explicated that the damaged core and weight fraction, carbon nanotubes (CNTs) waviness and CNT aspect ratio can significantly affect the vibrational behavior of the sandwich structure. Results show that by increasing the values of waviness index (w), normalized natural frequency of the structure decreases, and the straight CNT (w=0) gives the highest frequency. For an overall comprehension on vibration of laminated trapezoidal plates, some selected vibration mode shapes were graphically represented in this study.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.236-238
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• 1997

A cellular power amplifier using an APCVD(Atmospheric Pressure Chemical Vapor Deposition)-grown SiGe base HBT of ETRI has been designed with a linear simulation CAD. The Si/SiGe HBT with an emitter area of 2$\times$8${\mu}{\textrm}{m}$$^2$typically has a cutoff frequency(f$_{T}$) of 7.0 GHz and a maximum oscillation frequency(f$_{max}$) of 16.1 GHz with a pad de-embedding A packaged power Si/SiGe HBT with an emitter area of 2$\times$8$\times$80${\mu}{\textrm}{m}$$^2$typically shows a f$_{T}$ of 4.7 GHz and a f$_{max}$ of 7.1 GHz at a collector current (Ic) of 115 mA. The power amplifier exhibits a Forward transmission coefficient(S21) of 13.5 dB, an input and an output reflection coefficients of -42 dB and -45 dB respectively. Up to now the III-V compound semiconductor devices hale dominated microwave applications, however a rapid progress in Si-based technology make the advent of the Si/SiGe HBT which is promising in low to even higher microwave range because of lower cost and relatively higher reproducibility of a Si-based process.ess.ess.