• 한국진공학회:학술대회논문집
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• 한국진공학회 2007년도 제33회 하계학술대회 초록집
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• pp.284-284
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• 2007

• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 IUMRS-ICEM ABSTRACT BOOK
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• pp.86.2-86
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• 1998

• 한국자기학회지
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• 제5권5호
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• pp.538-542
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• 1995

The etching characteristics of magnetic thin films of permalloy and Fe-based alloys are investigated. The thin films are fabricated by rf magnetron sputtering and the substrates used are silicon and glass. Etching is done by ion beam technique and the main process parameters investigated are beam voltage, beam current and accelerating voltage. The etch rate of the magnetic films is proportional to the beam current, but it is not directly related to the accelerating voltage and beam voltage. The dependence of etch rate on the process parameters can be explained by ion current density. It is found that the ion beam etching is effective in obtaining well-developed micro-patterns on the permalloy and Fe- based magnetic thin films.

• 한국자기학회지
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• 제5권5호
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• pp.623-626
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• 1995

High coercivity thin $Fe_{3}O_{4}$ and ${\gamma}-Fe_{2}O_{3}$ films were deposited on Si substrate under well controlled $O_{2}$ partial pressure by dcreactive magnetron sputtering. The coercivity of as-deposited maggnetite films is below 640 Oe. After cxidizing at $360^{\circ}C$ for 10 minutes, the films transform to maghemite ${\gamma}-Fe_{2}O_{3}$ completely, and the coercivity increases greatly to 2100~4120 Oe, depending on modification of not with minor addition of Co or/and Mn. The orign of coercivity enhancement is attributed mainly to magnetic anisotropy arisen from interfacial stress. The addition of 5 at% Co and 5 at% Mn greatly enhances coercivity and squareness ratio. These films are potential for ultra-high density recording applications.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 추계학술발표대회
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• pp.23.1-23.1
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• 2009

ZnO is of great interest for various technological applications ranging from optoelectronics to chemical sensors because of its superior emission, electronic, and chemical properties. In addition, vertically well-aligned ZnO nanorods on large areas with good optical and structural properties are of special interest for the fabrication of electronic and optical nanodevices. To date, several approaches have been proposed for the growth of one-dimensional (1D) ZnO nanostructunres. Several groups have been reported the MOCVD growth of ZnO nanorods with no metal catalysts at $400^{\circ}C$, and fabricated a well-aligned ZnO nanorod array on a PLD prepared ZnO film by using a catalyst-free method. It has been suggested that the synthesis of ZnO nanowires using a template-less/surfactant-free aqueous method. However, despite being a well-established and cost-effective method of thin film deposition, the use of magnetrons puttering to grow ZnO nanorods has not been reported yet. Additionally,magnetron sputtering has the dvantage of producing highly oriented ZnO film sat a relatively low process temperature. Currently, more effort has been concentrated on the synthesis of 1D ZnO nanostructures doped with various metal elements (Al, In, Ga, etc.) to obtain nanostructures with high quality,improved emission properties, and high conductance in functional oxide semiconductors. Among these dopants, Ga-doped ZnO has demonstrated substantial advantages over Al-doped ZnO, including greater resistant to oxidation. Since the covalent bond length of Ga-O ($1.92\;{\AA}$) is nearly equal to that of Zn-O ($1.97\;{\AA}$), high electron mobility and low electrical resistivity are also expected in the Ga-doped ZnO. In this article, we report the successful growth of Ga-doped ZnO nanorods on c-Sapphire substrate without metal catalysts by magnetrons puttering and our investigations of their structural, optical, and field emission properties.

• 센서학회지
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• 제11권4호
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• pp.247-253
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• 2002

초전형 적외선 센서를 제작하기 위하여 rf 마그네트론 스퍼터링법으로 $(Pb,La)TiO_3(PLT)$/$LiTaO_3$(LTO)/PLT 강유전 박막을 증착한 후 급속 열처리하여 열처리 온도와 시간에 따른 결정성을 조사하였다. 강유전 박막의 c축 배향도에 따른 비유전율 및 유전손실을 측정하고 C축 배향도가 가장 큰 강유전 박막으로 제작된 센서에 대해 초전계수를 측정하여 센서의 전압응답에 대한 성능지수($F_V$)와 감도에 대한 성능지수($F_D$)를 구하였다. 얻어진 $F_V$, $F_D$는 각각 $6.15{\times}10^{-10}\;C{\cdot}cm/J$, $1.98{\times}10^{-8}\;C{\cdot}cm/J$였다.

• 한국전기전자재료학회논문지
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• 제29권9호
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• pp.546-551
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• 2016

$SrSnO_3:Tb^{3+}$ phosphor thin films were prepared on sapphire and quartz substrates in the growth temperature range of $100{\sim}400^{\circ}C$ by using the radio frequency magnetron sputtering deposition. The resulting $SrSnO_3:Tb^{3+}$ thin films were characterized by X-ray diffraction, scanning electron microscopy, ultraviolet-visible-infrared spectrophotometer, and photoluminescence spectrometer. The results indicated that the morphology, optical transmittance, band gap energy, and luminescence intensity of the phosphor thin films significantly depended on the growth temperature. All the thin films, regardless of the type of substrate, showed an amorphous behavior. As for the thin films deposited on sapphire substrate, the maximum crystallite size was obtained at a growth temperature of $400^{\circ}C$ and the strongest emission was green at 544 nm arising from the $^5D_4{\rightarrow}^7F_5$ transition of Tb3+. The average optical transmittance for all the thin films grown on sapphire and quartz substrates was decreased as the growth temperature increased from 100 to $400^{\circ}C$. The results suggest that the optimum growth temperatures for depositing highly-luminescent $SrSnO_3:Tb^{3+}$ phosphor thin films on sapphire and quartz substrates are 400 and $300^{\circ}C$, respectively.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권7호
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• pp.308-314
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• 2005

The 2 GHz film bulk acoustic wave resonator(FBAR), one of the most necessary device of the next generation mobile communication system, consisted of solidly mounted resonator(SMR) structure using Brags reflector, was researched in this paper The FBAR applied SiO$_{2}$ and W had large difference of the acoustic impedance to reflector Al to electrode and ZnO to piezoelectric layer. Specially, the FBAR applied the two-step deposition method to improve the c-axis orientation and increase reproducibility of the fabrication device had good performance. The electrical properties of plasma such as impedance, resistance, reactance, $V_{pp},\;I{pp}$, VSWR and phase difference of voltage and current, was analyzed and measured by RF sensor with the variable experiment process factors such as gas ratio, RF power and base vacuum level about concerning the thickness, c-axis orientation, adhesion and roughness. The FBAR device about the optimum condition resulted reflection loss(S$_{11}$) of -17 dB, resonance frequency of 1.93 GHz, electric-mechanical coefficient(k$_{eff}$) of 2.38 $\%$ and Qualify factor of 580. It was seen better qualify than the common dielectric filter at present and expected on business to the filter device of 2 GHz bandwidth with the MMIC technology.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.131-131
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• 2000

We witnessed the enhancement of mangetoresistance (MR) in La0.75Ca0.25MnO3 thin films grown on Si (100) substrates by RF magnetron sputtering. The films are polycrystalline with (100) and (110) orientations. The lattice constants of films are reduced as much as 0.9% compared to the one of the bulk sample, which proves that the compressive stress on films was imposed by Si sbustrate. It is found that the MR value (Δ$\rho$/$\rho$0) of films are 0.33, 0.29 and 0.27 under a magnetic field of 1.5T for each films with deposition temperature of $700^{\circ}C$, 75$0^{\circ}C$ and 80$0^{\circ}C$, respectively. The correlation between the MR values and lattice constants of films is discussed. It is concluded that the compressive stress on films cause the enhancement of MR values of thin films grown on Si (1000 substrates. Some mechanism of compressive stress induced by Si substrate is suggested.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2003년도 하계학술연구발표회 및 한.일 공동심포지엄
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• pp.194-194
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• 2003

As a result of the recent miniaturization an enhancement in the performance of thin film inductors and thin film transformers, there are increased demands for the thin films with high magnetic permeability in the high frequency range, high saturation magnetization, in high electrical resistivity, and low coercive force. In order to improve high frequency properties, we will investigate anisotropy field by shape and size of pattern. The Fe-Al-O thin films of 16mm and 1 $\mu\textrm{m}$ thickness were deposited on Si wafer, using RF magnetron reactive sputtering technique with the mixture of argon and oxygen gases. The fabricating conditions are obtained in the working partial pressure of 2mTorr, O$_2$ partial pressure of 5%, input power of 400W, and Al pellets on an Fe disk with purity of 99,9%. Magnetic properties of the continuous films as followed: the 4$\pi$M$\_$s/ of 19.4kG, H$\_$c/ of 0.6Oe, H$\_$k/ of 6.0Oe and effective permeability of 2500 up to 100㎒ were obtained. In this work, we expect to enhance effect of magnetic anisotropy on patterned of Fe-Al-O thin films.