• Proceedings of the KIPE Conference
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• 2018.07a
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• pp.126-128
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• 2018

Solar array simulator (SAS) is a special DC power supply that regulates the output voltage or current to emulate characteristics of photovoltaic (PV) panels. Especially, the control of SAS is a challenging task due to the nonlinearity in the output curve, which is dependent on irradiance as well as temperature and is determined by panel materials. Conventionally, both current-mode control and voltage-mode control should be alternated by partitioning the operating curve into multiple sections, which is not only for the measurement noise problem with the feedback sensing but also for the control stability issue near the maximum power point. However, the occurrence of transition among different controllers may deteriorate the overall performance. To eliminate the mode transitions, a novel single controller scheme has been introduced in this paper, where the reference operating projection technique enables simple, smooth and numerically stable control. Theoretical consideration on the loop stability issue is discussed and the performance is verified experimentally for the emulation of a PV panel data in view of stability and response speed.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.1
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• pp.142-147
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• 2018

Private electrical facilities are judged whether it is suitable for the insulation aging condition of their incoming underground cables using DC leakage current test method. In the case where the service point of utility is the secondary side of cut out switch installed in the electric pole, there is a problem that it is difficult to separate the lightning arresters(LA) because of their high position of the pole. Therefore, the field test voltage is applied at value lower than DC 30 kV, which are stated in the inspection guideline. However, this test could reduced the insulation performance of the LA by accelerating the electrical stress of the metal oxide varistor element in the pre-breakdown region. In this study, we analyzed the relationship between the DC test voltage and the leakage current using the non-destructive DC high voltage equipment with leakage current measurement function. The results show that the leakage current increases sharply above the specified test voltage. As a consequence, it could be contributed to improve insulation aging inspection method by selecting the possible test area on the VI characteristic curve of the pre-breakdown area of the LA.

• Journal of Electrical Engineering and Technology
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• v.10 no.1
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• pp.30-40
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• 2015

For a shunt power quality controller (SPQC) the DC side voltage value which is closely related to the compensation performance is a significant parameter. Buy so far, very little discussion has been conducted on this in a quantitative manner by previous publications. In this paper, a method to design the DC side voltage of SPQC is presented according to the compensation performance in the single-phase system and the three-phase system respectively. First, for the reactive current and the harmonic current compensation, a required minimal value of the DC side voltage with a zero total harmonic distortion (THD) of the source current and a unit power factor is obtained for a typical load, through the equivalent circuit analysis and the Fourier Transform analytical expressions. Second, when the DC side voltage of SPQC is lower than the above-obtained minimal value, the quantitative relationship between the DC side voltage and the THD after compensation is also elaborated using the curve diagram. Hardware experimental results verify the design method.

• Current Optics and Photonics
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• v.3 no.6
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• pp.516-521
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• 2019

The electrical leakage levels of GaN-based light-emitting diodes (LEDs) containing leakage paths are estimated using photoluminescence (PL) and photovoltaic properties under photoexcitation conditions. The PL intensity and open-circuit voltage (V_OC) decrease because of carrier leakages depending on photoexcitation conditions when compared with reference values for typical LED chips without leakage paths. Changes of photovoltage-photocurrent characteristics and PL intensity due to carrier leakage are employed to assess the leakage current levels of LEDs with leakage paths. The current corresponding to the reduced V_OC of an LED with leakage from the photovoltaic curve of a reference LED without leakage is matched with the leakage current calculated using the PL intensity reduction ratio and short-circuit current of the LED with leakage. The current needed to increase the voltage for an LED with a leakage under photoexcitation from V_OC of the LED up to V_OC of a reference LED without a leakage is identical to the additional current needed for optical turn-on of the LED with a leakage. The leakage current level estimated using the PL and photovoltaic properties under photoexcitation is consistent with the leakage level measured from the voltage-current characteristic obtained under current injection conditions.

• The Korean Journal of Physiology
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• v.17 no.1
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• pp.1-11
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• 1983

1) The two microelectrode method was used to voltage clamp small preparations of rabbit sinoatrial node. The kinetics of hyperpolarization activated inward current, $i_f$ were analysed. 2) The hrperpolarization pulses activated $i_f$ current in the presence of $10^{-7}g/ml$ TTX and 2 mM $Mn^{2+}$. The activation range was in between -45 mV to -75 mV. The current magnitude was increased and time course was faster by strong hyperpolarization pulses. 3) Standard envelope tests indicated that this current is exponentially controlled by single gate. 4) Semilogarithmic plot of $i_f$ activation versus time was found to be linear in the activation range. The decrease in current magnitude and the shifts in activation curve and rate constants curve to the hyperpolarizing direction were obtained with $Ba^{2+}$, indicating that $Ba^{2+}$ shifts the voltage dependence of the gating kinetics, were partially reversed by 24 mM $K^+$.

• Journal of the Korean Society of Safety
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• v.9 no.1
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• pp.56-60
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• 1994

In this study, Cuttent vs. Temperature characteristics of polyethylene with high-voltage treatment and crystallinity have been studied. The current curve( $I_{th}$) shows two peaks at 85 ($^{\circ}C$) and 50($^{\circ}C$), respectively. Trapping of carriers Proceeds during the high-field treatment, and it Is clear that 1th arises from the drift of carriers under the external voltage( $V_{b}$). From the results of TSC of BDPE and LDPE. It is realized that the traps are relation to the crystallinity.y.y.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.7
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• pp.1135-1143
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• 1994

We fabricate a bottom gate a-Si:H TFT on N-Type <100> Si wafer. According to the Variation of gate and drain voltage, the hysteresis characteristic curves were measured experimentally. Also, we proposed model equation and showed that the model predict the hysteresis characteristic successfully. Drain current on the hysteresis characteristic curve showed an exponential variation. Hysteresis area of TFT increased with the drain voltage increase and decreases with the drain voltage decrease.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.1041-1044
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• 1992

A solar cell should be operated at the maximum output point on the I-V characteristic curve with constant current and constant voltage in order that the solar energy be fully utilized. According to, in this paper, we describes a controller which can track the maximum power point of a solar arry using current and voltage ripple variation of step up chopper system. The control circuit is desinged such that actual current and voltage are sensed directly from the solar cell array. These two signal are then holded sampling and multiplies by a single chip multiplier.

• KIEE International Transactions on Electrophysics and Applications
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• v.2C no.5
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• pp.258-261
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• 2002

Electrical forming dependent current-voltage (I-V) and numerically derived differential conductance(dI／dV) characteristics have been presented in the multi-layer nano-crystalline silicon／oxygen (no-Si／O) superlattice. Distinct staircase-like features, indicating the presence of resonant tunnel barriers, are clearly observed in the dc I-V characteristics. Also, all samples showed a continuous change in current and zero conductivity around OV corresponding to the Coulomb blockade in the calculated dI／dV-V curve. Also, Ra-man scattering measurement showed the presence of a nano-crystalline Si structure. This result becomes a step in the right direction for the fabrication of silicon-based optoelectronic and quantum devices as well as for the replacement of silicon-on-insulator (SOI) in high speed and low power silicon MOSFET devices of the future.

• 전기의세계
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• v.27 no.6
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• pp.49-53
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• 1978

This paper investigates on the electric input characterisitcs of plasma electron beam in H$_{2}$ gas chamber with various pressures, effected by the shape and dimension of hollow screen cathode during electron beam is formed. The result are as follows: (1)Electron beam is formed in the region of positive resistance on the characteristic curve which shows the relation between the voltage and current of electron beam, independent of the shape and dimension of hollow screen cathode. (2)At a given electron beam current, electron beam voltage increases with the decreases of hollow screen cathode length and screen mesh number of it. (3)At a given electron beam current, electron beam voltage increases with the diameters of hollow screen cathode and electron beam hole of it.