• Proceedings of the KIPE Conference
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• 2017.07a
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• pp.463-464
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• 2017

다른 리튬계열 전지와 달리, 인산철($LiFePO_4$) 배터리는 중간 동작 영역에서 개방전압(OCV; open-circuit voltage)의 히스테리시스(hysteresis) 영역이 존재한다. 그러므로, 인산철 배터리 관리시스템, 특히 충전상태(SOC; state-of-charge)와 수명상태(SOH; state-of-health)의 정확한 모니터링을 위해서는 OCV의 정밀성이 요구된다. 본 논문에서는, 충전 및 방전 OCV-SOC의 SOC 간격에 따른 인산철 배터리의 SOH를 비교하기 위해 전기적 등가회로 모델(ECM; electrical-circuit modeling)적응제어 알고리즘 기반 실시간 내부저항(DCIR; direct current internal resistance)을 모니터링 하였다.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1283-1285
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• 1993

A new simulation method for a device including the Floated Field Plate(FFP) is proposed. The external resistance is connected with FFP in order to simulate FFP as a electrode. The numerical I-V characteristic obtained from MEDICI simulation shows fairly good results such as low leakage current and abrupt breakdown voltage curve. The convergence is improved conveniently compared with conventional method which utilize heavily-doped poly silicon as a electrode.

• 한국신재생에너지학회:학술대회논문집
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• 2006.06a
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• pp.55-58
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• 2006

An experimental study is performed to evaluate the performance and the efficiency by humidifying MEA and by making the double-layered catalyst in a fuel cell system which is taken into account the physical and thermal concept. An electrical output produced by PEMFC(Polymer Exchange Membrane Fuel Cell) is measured to assess the performance of the stack and the efficiency is also evaluated according to the different situation in which is placed with and without the humidification of MEA(Membrane Electrolyte Assembly). Subsequently, It is found that the measured values of MEA voltage and current are influenced by the MEA temperature, humidification, and the double-layered catalyst which gives more enhanced values to apply for electric units.

• Journal of Sensor Science and Technology
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• v.8 no.6
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• pp.476-480
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• 1999

PbSe thin films were grown using PLD method on the p-Si(100) substrate. To determine what crystalline structure of PbSe thin films have according to the growth temperature, the films were prepared under a substrate temperature changing between a room temperature and $400^{\circ}C$. As a result of analyzing XRD patterns of PbSe thin films prepared at various substrate temperatures and FWHM of PbSe(200) rocking curve, it was found that PbSe thin film obtained at the growth temperature of $200^{\circ}C$ was best crystallized. In addition, the surface morphology of PbSe thin film observed using AFM found itself having the most regularly arranged particles in case of growing the film at $200^{\circ}C$. The measurement of Hall effect indicated that PbSe thin films were n-type semiconductors and that current-voltage characteristic curve exhibit the typical p-n junction phenomenon. In addition, electric conductivity of PbSe thin films was found somewhat higher than that of general semiconductors.

• Journal of the Korean Solar Energy Society
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• v.37 no.4
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• pp.23-33
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• 2017

A great deal of study for loss reduction of photovoltaic system is conducted currently. It is hard to distinct the fault of photovoltaic system with the naked eye. For that reason, it is essential to repair and maintain the PV system by monitoring the system. The fault of individual modules can cause the huge loss of the entire system because of the mismatch. Therefore, the method of diagnosing the PV array is necessary by measuring the multi-channel arrays simultaneously. In this paper, it is presented the method of measuring I-V curve of multi-channel arrays simultaneously by using the charge and discharge characteristics of capacitor. Generated DC power at PV arrays is charged and discharged at the capacitors in a moment. By measuring the charged voltage and current, it is possible to diagnose of performance of PV arrays.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.91-92
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• 2011

Beat is a phenomenon, where the magnitudes and frequencies of the voltage and the current fluctuate. This paper describes a quantitative analysis of the beat phenomenon of a wind farm using the envelope of a current during intertie/grid fault conditions. In this paper, the ratio of the crest to the trough of the envelope curve and the time interval between adjacent troughs are defined and used to evaluate the beat phenomenon quantitatively. Beat phenomena under various fault and wind conditions are analyzed. The proposed quantitative analysis seems simple but effective in the more understanding of beat phenomenon of a wind farm, and thus can be used as a basis for operation and/or protection of an intertie.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.112-115
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• 1993

We have studied a property of arachidic acid Langmuir-Blodgett films at room temperature with two different electrodes ; Al/LB/Al and Au/LB/Au. Since a natural oxide layer is formed on top of the Al electrode, the appropriate structure of AL/LB/Al is Al/Al$_2$O$_3$/LB/Al. To obtain a property of Pure LB film, Aua/LB/Au structure was made. In Al/Al$_2$O$_3$/LB/Al structure, a conductivity of 3.7${\times}$10$\^$-14/ S/cm was obtained by using current-voltage(I-V) characteristics. In Au/LB/AU structure, however, I-V curve was not able to be measured because of short current even in 51 layers of the LB film. A status of defects in the film was confirmed by copper decoration method. We have clearly seen a rather big difference of defect in those two above structures.

• Journal of the Korean Vacuum Society
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• v.5 no.1
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• pp.62-66
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• 1996

$(Ba_{1-x}Sr_xTiO_3$ (BST) thin films have been grown on Pt-coated MgO by metal -organic chemical vapor deposition. X-ray diffraction results showed that BST films were grown on a Pt/MgO substrate with (100) preferred orientation perpendicular to the surface. The lineawr relationship of P-E curve obtained form hysteresis loop measurement indicated that the BST films had a Curie transitions below room temperature . Films deposited at $900^{\circ}C$ exhibited a smooth and dense microstructure, a dielectric constant of 202, and a dissipation facotr of 0.02 at 100kHz. The leakage current density of the BST films is about $2\times10^{-10} \;A/\textrm{cm}^2$$ at an applied electric field of 0.2 MV/cm. The electrical behavior on the current-voltage characteristics is well explained by the bulk-limited Pool-Frenkel emission.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.4
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• pp.534-540
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• 1990

In this paper the characteristics of submicron gate GaAs MESFET's have been studied using a particle model which takes into account the hot-electron transport phenomena, i.e., the velocity overshoot. \ulcornervalley(<000> direction), L valley (<111>direction), X valley (<100>direction) as the GaAs conduction energy band and optical phonon, acoustic phonon, equivalent intervalley, nonequivalent intervalley scattering as the scattering models, have been considered in this simulation. And the GaAs material and the device simulation have been done by determination of the free flight time, scattering mechanism and scattering angle according to Monte-Carlo algorithm which makes use of a particle model. As a result of the particle simulation, firstly the electron distribution, the potential energy distribution and the situation of electron displacement in 0.6 \ulcorner gate length device have been obtained. Secondly, the cutoff frequency, obtained by this method, is k47GHz which is in good agreement with the calculated result of theory. And the current-voltage characteristics curve which takes account of the buffer layer effect has been obtained. Lastly it has been verified that parasitic current at the buffer layer can be analyzed using channel depth modulation.

• Journal of the Korean Ceramic Society
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• v.32 no.11
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• pp.1262-1268
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• 1995

Photoelectrochemical properties of p-GaAs electrode have been investigated. I-V characteristic shows that the cathodic photocurrent is observed at -0.7 V vs. SCE. The photoresponse at near 870~880nm wavelength indicates that the photogenerated carriers contibuted to the observed current. The maximum converson efficiency of 35% is obtained for a Xe lamp light source at 400nm. In C-V relation, capacitance peaks appeared at the frequencies of 100Hz and 300Hz due to the activation of the interfacial states which exist at the energy level corresponding to the one-third of the GaAs band gap. The difference of about 1.1V between flatband potential (Vfb) from the Mott-Schottky method and onset voltage from I-V curve is observed due to the trap of carriers at the interfacial states in the boundary between GaAs and electrolyte. In case of WO3 deposited p-GaAs electrode, higher positive onset current and photocurent density are obtained. This can be explained by the fact that carriers are generated by light penetrated into the WO3 thin flm as well as p-GaAs substrate and then move into the electrolyte effectively.