• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.744-746
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• 2003

A ZnO varistor with reference voltage 250V/mm was fabricated through the control of particle size in slurry and the variation of sintering conditions. It was found that to measure the flatness of the V-I characteristic curve in the small-current region and the flatness of the V-I characteristic curve in a large-current region was improved nonlinearity of the fabricated ZnO varistor. According to the IEC 60099-4 was measured the accelerated aging test and high current test of the distribution class surge varistor which is excellent in respect to the property of ZnO varistor.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.58 no.4
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• pp.557-562
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• 2009

Recently, researchers are developing a new, clean, renewable and sustainable energy to the industrial areas and the residential areas. Solar cell and fuel cell energy are presented in this paper. The paper shows the P-I and I-V characteristics of fuel cells which are connected in parallel and series. And the voltage drop of internal resistance of the fuel cell decreases with the increasing of the current of the fuel cell. A voltage drop at the internal resistance is increased according to the current, thus the terminal voltage is decreased. The internal resistance is calculated $0.3[\Omega]$ from maximum power transfer condition.

• Korean Chemical Engineering Research
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• v.48 no.6
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• pp.737-740
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• 2010

High leakage current and threshold voltage shift(${\Delta}Vth$) are demerits of a-Si:H TFT. These characteristics are influenced by gate insulator and active layer film quality, surface roughness, and process conditions. The purpose of this investigation is to improve off current($I_{off}$) and ${\Delta}V_{th}$ characteristics. Nitrogen-rich deposition condition was applied to gate insulator, and hydrogen-rich deposition condition was applied to active layer to reduce electron trap site and improve film density. $I_{off}$ improved from 1.01 pA to 0.18 pA at $65^{\circ}C$, and ${\Delta}V_{th}$ improved from -1.89 V to 1.22 V.

• The Korean Journal of Physiology and Pharmacology
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• v.9 no.5
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• pp.269-273
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• 2005

In horizontal cells (HCs) that were freshly dissociated from goldfish retina, two types of voltagedependent calcium currents ($I_{Ca}$) were recorded using a patch-clamping configuration: a transient type current and a sustained type current. The cell was held at -40 mV, and the prepulse step of -90 mV was applied before command pulse between -65 and +55 mV. The transient $Ca^{2+}$ current was activated by depolarization to around -50 mV from a prepulse voltage of -90 mV lasting at least 400 ms and reached a maximal value near -25 mV. On the other hand, the sustained $Ca^{2+}$ current was induced by pre-inactivation for less than 10 ms duration. Its activation started near -10 mV and peaked at +20 mV. $Co^{2+}$ (2 mM) suppressed both of these two components, but nifedipine ($20{\mu}M$), L-type $Ca^{2+}$ channel antagonist, blocked only the sustained current. Based on the activation voltage and the pharmacolog$I_{Ca}$l specificity, the sustained current appears to be similar to L-type $I_{Ca}$ and the transient type to T-type $I_{Ca}$. This study is the first to confirm that transient type $I_{Ca}$ together with the sustained one is present in HCs dissociated from goldfish retina.

• The Korean Journal of Physiology and Pharmacology
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• v.1 no.2
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• pp.169-183
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• 1997

We have investigated the two types of voltage-dependent outward potassium (K) currents, i.e. delayed rectifier K current ($I_{K(V)}$) and 'A-like' transient outward K current ($I_{to}$) with patch-clamp technique in single smooth muscle cells (SMCs) isolated from rabbit basilar artery, and investigated the characteristics of them. The time-courses of activation were well fitted by exponential function raised to second power ($n^2$) in $I_{K(V)}$ and fourth power ($n^4$) in $I_{to}$. The activation, inactivation and recovery time courses of $I_{to}$ were much faster than that of $I_{K(V)}$. The steady-state activation and inactivation of $I_{K(V)}$ was at the more hyperpolarized range than that of $I_{to}$ contrary to the reports in other vascular SMCs. Tetraethylammonium chloride (TEA; 10 mM) markedly inhibited $I_{K(V)}$ but little affected $I_{to}$. 4-Aminopyridine (4-AP) had similar inhibitory potency on both currents. While a low concentration of $Cd^{2+}$ (0.5 mM) shifted the current- voltage relationship of $I_{to}$ to the positive direction without change of maximum conductance, $Cd^{2+}$ did not cause any appreciable change for $I_{K(V)}$.

• Journal of Electrical Engineering and Technology
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• v.9 no.1
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• pp.280-285
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• 2014

In order to evaluate the insulation deterioration in the stator windings of five gas turbine generators(137 MVA, 13.8 kV) which has been operated for more than 13 years, diagnostic test and AC dielectric breakdown test were performed at phases A, B and C. These tests included measurements of AC current, dissipation factor, partial discharge (PD) magnitude and capacitance. ${\Delta}I$ and ${\Delta}tan{\delta}$ in all three phases (A, B and C) of No. 1 generator stator windings showed that they were in good condition but PD magnitude indicated marginally serviceable and bad level to the insulation condition. Overall analysis of the results suggested that the generator stator windings were indicated serious insulation deterioration and patterns of the PD in all three phases were analyzed to be internal, slot and spark discharges. After the diagnostic test, an AC overvoltage test was performed by gradually increasing the voltage applied to the generator stator windings until electrical insulation failure occurred, in order to determine the breakdown voltage. The breakdown voltage at phases A, B and C of No. 1 generator stator windings failed at 28.0 kV, 17.9 kV, and 21.3 kV, respectively. The breakdown voltage was lower than that expected for good-quality windings (28.6 kV) in a 13.8kV class generator. In the AC dielectric breakdown and diagnostic tests, there was a strong correlation between the breakdown voltage and the voltage at which charging current increases abruptly ($P_{i1}$, $P_{i2}$).

• Electrical & Electronic Materials
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• v.8 no.2
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• pp.176-183
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• 1995

The present work is concerned with the switching conduction characteristics of PI LB films in metal insulator metal sandwiches. By applying various DC voltage bias to MIM junctions, conduction characteristics of junctions can be changed between the high-voltage low-current(off) condition, the low-voltage high-current (on) condition and the medium(mid) condition. Switching conduction characteristics can be also observed in MIM junctions employing some aromatic compounds as insulators. Switching conduction characteristics is assumed to be owing to the existence of aromatic rings, space charge in films, impurities on metal-insulator interface, and difference in work functions of base and top electrodes metal. To study the conduction process of on, off, and mid conductions, we measured I-V, d$^{2}$V/d I$^{2}$-V characteristics of junctions with several different top electrodes under various temperatures. Small conductance changes of junctions can be measured by observing the second derivative, d$^{2}$V/dI$^{2}$, of I-V curve. A dynamical technique is used to get the second derivatives. That is, a finite modulation of the current is applied to the junctions and the second harmonic of the voltage is detected.

• Proceedings of the KIEE Conference
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• 2002.07a
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• pp.169-171
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• 2002

The western route of KEPCO's 765kV transmission line has been tentatively operating as 345kV voltage before commercial operation. After finishing the test operation of 765kV substation in 2002. KEPCO decided to operate the 765kV line for commercial operation. During the applying of 765kV voltage to the transmission line, double circuit transmission line will be operated with two voltage grades of 765kV and 345kV. Because the earthing switch is installed on both end of transmission line, we had estimated the electrostatic induction voltage and electromagnetic induction current before the line energizing in order to confirm the ratings of earthing switch. The induced voltage and current is very important for the maintenance of parallel circuit. This paper describes the simulation study of electrical phenomena such as electrostatic induction voltage from the parallel line and electromagnetic induction current from the parallel circuit. The transmission line model was developed by EMTP (Electro-Magnetic Transient Program).

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.10a
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• pp.398-401
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• 2011

This paper presents a high-efficiency CMOS PWM DC-DC buck converter. It generates a constant output voltage(1-2.8V), from an input voltage(3.4-3.9V). Inductor-based type is chosen and inductor current is controlled with PWM operation. The designed circuit consists of power switch, Pulse Width Generation, Buffer, Zero Current Sensing, Current Sensing Circuit, Clock & Ramp generation, V-I Converter, Soft Start, Compensator and Modulator. Switching Frequency is 1MHz, It operates in CCM when the load current is more than 40mA, and the maximum efficiency is 98.71% at 100mA. Output voltage ripple is 0.98mV(input voltage:3.5V, output voltage:2.5V). The performance of the designed circuit has been verified through extensive simulation using a CMOS $0.18{\mu}m$ technology.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.171-172
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• 2007

We fabricated the metal-ferroelectric-insulator-semiconductor filed-effect transistors (MFIS-FETs) using the $(Bi,La)_4Ti_3O_{12}\;and\;LaZrO_x$ thin films. The $LaZrO_x$ thin film had a equivalent oxide thickness (EOT) value of 8.7 nm. From the capacitance-voltage (C-V) measurements for an Au/$(Bi,La)_4Ti_3O_{12}/LaZrO_x$/Si MFIS capacitor, a hysteric shift with a clockwise direction was observed and the memory window width was about 1.4 V for the bias voltage sweeping of ${\pm}9V$. From drain current-gate voltage $(I_D-V_G)$ characteristics of the fabricated Fe-FETs, the obtained threshold voltage shift (memory window) was about 1 V due to ferroelectric nature of BLT film. The drain current-drain voltage $(I_D-V_D)$ characteristics of the fabricated Fe-FETs showed typical n-channel FETs current-voltage characteristics.