• JSTS:Journal of Semiconductor Technology and Science
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• 제14권6호
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• pp.810-817
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• 2014

An on-chip current sensor with fast response time for the peak-current-mode buck regulator is proposed. The initial operating points of the peak current sensor are determined in advance by the valley current level, which is sensed by a valley current sensor. As a result, the proposed current sensor achieves a fast response time of less than 20 ns, and a sensing accuracy of over 90%. Applying the proposed current sensor, the peak-current-mode buck regulator for the mobile application is realized with an operating frequency of 2 MHz, an output voltage of 0.8 V, a maximum load current of 500 mA, and a peak efficiency of over 83%.

• 한국전기전자재료학회논문지
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• 제23권8호
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• pp.593-600
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• 2010

In this paper, High brightness LED (light-emitting diodes) driver IC (integrated circuit) using new current sensing circuit is proposed. This LED driver IC can provide a constant current with high current precision over a wide input voltage range. The proposed current-sensing circuit is composed of a cascode current sensor and a current comparator with only one reference voltage. This IC minimizes the voltage stress of the MOSFET (metal oxide semiconductor field effect transistor) from the maximum input voltage and has low power consumption and chip area by using simple-structured comparator and minimum bias current. To confirm the functioning and characteristics of our proposed LED driver IC, we designed a buck converter. The LED current ripple of the designed IC is in ${\pm}5%$ and a tolerance of the average LED current is lower than 2.43%. This shows much improved feature than the previous method. Also, protections for input voltage and operating temperature are designed to improve the reliability of the designed IC. Designed LED driver IC uses 1.0 ${\mu}m$ X-Fab. BiCMOS process parameters and electrical characteristics and functioning are verified by spectre (Cadence) simulation.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
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• pp.419-422
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• 2004

A sensing scheme for current-mode magneto-resistance random access memory (MRAM) with a 1T1MTJ cell structure is proposed. Magnetic tunnel junction (MTJ) resistance, which is HIGH or LOW, is converted to different cell currents during READ operation. The cell current is then amplified to be evaluated by the reference cell current. In this scheme, conventional bit line sense amplifiers are not required and the operation is less sensitive to voltage noise than that of voltage-mode circuit is. It has been confirmed with HSPICE simulations using a 0.35-${\mu}m$ 2-poly 4-metal CMOS technology.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1990년도 추계학술대회 논문집 학회본부
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• pp.73-77
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• 1990

In this paper we describe the solid-state ac-circuit breaker which has the characteristic of both a half cycle circuit breaker and a current limiting circuit breaker. This circuit breaker has a current limiting resistor in order to surprises the fault current to a certain level and discharge the energe included in circuit inductor. We explain the effect of circuit parameter on transient phenomena of switch device by using EMTP and finally design the control circuit consisted synchronous closing circuit, over- current detecting circuit and sensing circuit of rate of rise of fault current.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2011년도 추계학술대회
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• pp.398-401
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• 2011

본 논문에서는 고효율의 CMOS PWM DC-DC 벅 변환기를 설계하였다. 설계된 CMOS PWM DC-DC 벅 변환기는 입력전압(3.4-3.9V)로부터 일정한 출력전압(1-2.8V)을 생성한다. Inductor-based 방식을 택하였고, 제어 대상은 전류이며, Pulse Width Modulation(PWM) 모드로 동작한다. 회로 구성은 Power Switch, Pulse Width Generation, Buffer, Zero Current Sensing, Current Sensing Circuit, Clock & Ramp generation, V-I Converter, Soft Start, Compensator, Modulator 등 이다. 제안된 CMOS PWM DC-DC 벅 컨버터는 Switching Frequency가 약 1MHz이고, 부하 전류가 약 40mA이상부터 CCM동작을 하며 100mA일 때 98.71%의 최대 효율을 갖는다. 또한, 출력전압 리플은 0.98mV이다(입력전압 3.5V, 출력전압 2.5V 기준). 제안된 회로의 검증을 위해 CMOS $0.18{\mu}m$ 공정을 이용하여 시뮬레이션을 수행하였다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.529-530
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• 2006

An efficient sensing scheme adoptable in DC-DC converter is described. The output voltage of the whole DC-DC converter is fed back to the input voltage of the sensor. The comparison in the sensor is accomplished by a current push-pull action. With a fixed reference, the comparator can be embodied based on (W/L) ratios. The current-mode scheme benefits the system better than a conventional voltage-mode one in terms of small area, low power consumption.

• Transactions on Electrical and Electronic Materials
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• 제12권6호
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• pp.262-266
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• 2011

A simulation study of a current-mode direct current (DC)-DC boost converter is presented in this paper. This converter, with a fully-integrated power module, is implemented by using bipolar complementary metal-oxide semiconductor (BiCMOS) technology. The current-sensing circuit has an op-amp to achieve high accuracy. With the sense metal-oxide semiconductor field-effect transistor (MOSFET) in the current sensor, the sensed inductor current with the internal ramp signal can be used for feedback control. In addition, BiCMOS technology is applied to the converter, for accurate current sensing and low power consumption. The DC-DC converter is designed with a standard 0.35 ${\mu}m$ BiCMOS process. The off-chip inductor-capacitor (LC) filter is operated with an inductance of 1 mH and a capacitance of 12.5 nF. Simulation results show the high performance of the current-sensing circuit and the validity of the BiCMOS converter. The output voltage is found to be 4.1 V with a ripple ratio of 1.5% at the duty ratio of 0.3. The sensing current is measured to be within 1 mA and follows to fit the order of the aspect ratio, between sensing and power FET.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.9-9
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• 2010

In this paper, High Brightness LED driver IC using new current sensing circuit is proposed. This LED driver IC can provide a constant current with high current precision over a wide input voltage range. The proposed current-sensing circuit is composed of a cascode current sensor and a current comparator with only one reference voltage. This IC minimizes the voltage stress of the MOSFET from the maximum input voltage and has low power consumption and chip area by using simple-structured comparator and minimum bias current. The LED current ripple of the designed IC is in ${\pm}5%$ and a tolerance of the average LED current is lower than 2.43%. This shows much improved feature than the previous method. Also, protections for input voltage and operating temperature are designed to improve the reliability of the designed IC. Designed LED driver IC uses $1{\mu}m$ X-Fab. BiCMOS process parameters and electrical characteristics and functioning are verified by spectre(Cadence) simulation.

• 한국화재소방학회논문지
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• 제27권2호
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• pp.1-5
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• 2013

본 논문은 사고전압 감지형의 아크차단 제어회로에 대한 연구로써, 전기사고 발생 시 선간전압의 순간적인 전압감쇠를 감지하여 기존 차단기를 동작시키는 전압감지형 전기화재 예방장치이다. 현재 저압배전 계통에 사용중인 누전차단기, 배선용차단기 그리고 RCD 등은 전기화재의 주요 요인인 아크사고에 대해 보호능력이 없는 것으로 분석된다. 본 논문에서는 이러한 문제점들을 개선하기위하여 이전의 전류감지에 의한 아크사고 차단방식이 아닌 사고발생 시 전압파형의 왜곡을 이용한 새로운 전압감지형 아크차단 제어회로를 개발하여 전기화재를 예방하고자 한다. 제안한 아크차단 제어회로는 소형 경량으로 제작되는 장점과 다양한 동작분석을 통하여 그 실용성을 검증하였다.

• 한국전기전자재료학회논문지
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• 제31권6호
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• pp.427-432
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• 2018

High-capacity secondary batteries can cause explosion hazards owing to microcurrent variations or current surges that occur in short circuits. Consequently, complete safety cannot be achieved with general protection that is limited to a mere current fuse. Hence, in the case of secondary batteries, it is necessary for the protector to limit the inrush current in a short circuit, and to detect the current during microcurrent variations. To serve this purpose, a fuse can be employed for the secondary battery protection circuit with current detection. This study aims at designing a protection device that can stably operate in the hazardous circumstances associated with high-capacity secondary batteries. To achieve the said objective, a detecting fuse was designed from an alloy of low melting point elements for securing stability in abnormal current states. Experimental results show that the operating I-T and V-T characteristic constraints can be satisfied by employing the proposed current detecting self-contained low melting point fuse, and through the resistance of the heating resistor. These results thus verify that the proposed protection device can prevent the hazards of short circuit current surges and microcurrent variations of secondary batteries.