• 한국재료학회지
• /
• 제24권7호
• /
• pp.344-350
• /
• 2014

Metal films (i.e., Ti, Al and SUH310S) were prepared in a magnetron sputtering apparatus, and their cross-sectional structures were investigated using scanning electron microscopy. The apparatus used consisted of a cylindrical metal target which was electrically grounded, and two anode rings attached to the top and to the bottom of the target. A wire was placed along the center-line of the cylindrical target to provide a substrate. When the electrical potential of the substrate was varied, the metal-film formation rate depended on both the discharge voltage and the electrical potential of the substrate. As we made the magnetic field stronger, the plasma which appeared near the target collected on the plasma wall surface and thereby decreased the bias current. The bias current on the conducting wire was different from that for cation collection. The bias current decreased because the collection of cations decreased when we increased the magnetic-coil current. When the substrate was electrically isolated, the films deposited showed a slightly coarse columnar structure with thin voids between adjacent columns. In contrast, in the case of the grounded substrate, the deposited film did not show any clear columns but instead, showed a densely-packed granular structure. No peeling region was observed between the film and substrate, indicating good adhesion.

• 한국표면공학회지
• /
• 제36권5호
• /
• pp.379-385
• /
• 2003

The surface morphology, the glossiness and the hardness of Zn-Cr and Zn-Cr-X(X:Co, Mn) alloy electrodeposits were investigated by using chloride bath with EDTA additive and flow cell system. The surface morphology of Zn-Cr alloy and Zn-Cr-Mn alloy changed from fine needle shape crystalline structure to colony structure of fine granular crystallites with increasing current density in the range of 20-100 $A/dm^2$. The surface morphology of Zn-Cr-Co alloy deposited from low Co concentration bath(2.5-10 g/$\ell$) was similar to that of Zn-Cr alloy, while that of Zn-Cr-Co alloy deposited from high cobalt concentration bath was fine granular crystalline structure in the same range of current density. The glossiness of Zn-Cr and Zn-Cr-Mn alloy increased noticeably with increasing current density, while that of Zn-Cr-Mn alloy decreased with increasing Mn concentration of bath in high current density region. The glossiness of Zn-Cr-Co alloy deposited from low Co concentration bath increased with current density while that of the alloy from high Co concentration bath decreased with increasing current density. The hardness of Zn-Cr and Zn-Cr-X alloy increased noticeably with current density.

• 정보처리학회논문지A
• /
• 제15A권2호
• /
• pp.69-74
• /
• 2008

본 논문은 MOS 전류모드 논리회로 (MOS current-mode logic circuit)의 누설전류를 감소시키기 위해 슬립 트랜지스터 (sleep-transistor) 트랜지스터를 이용하여 저 전력 MOS 전류모드 논리회로를 구현하는 새로운 구조를 제안하였다. 슬립 트랜지스터는 누설전류를 최소화하기 위해 고 문턱전압 PMOS 트랜지스터 (high-threshold voltage PMOS transistor)를 사용하였다. $16\;{\times}\;16$ 비트 병렬 곱셈기를 제안한 구조에 적용하여 제안한 구조의 타당성을 입증하였다. 이 회로는 기존 MOS 전류모드 논리회로 구조에 비해 대기전력소모가 1/50으로 감소하였다. 이 회로는 삼성 $0.35\;{\mu}m$ 표준 CMOS 공정을 이용하여 설계하였으며, HSPICE를 이용하여 검증하였다.

• 대한토목학회논문집
• /
• 제36권6호
• /
• pp.1037-1048
• /
• 2016

본 연구에서는 Navier-Stokes 방정식과 자유수면 추적에 VOF법을 채용하는 CADMAS-SURF를 이용하여 파랑과 흐름의 비선형 상호간섭현상을 연구하였다. 파-흐름 공존장에서의 유체거동 해석을 위해 CADMAS-SURF를 수정 및 확장하였고, 계산치를 실험치와 비교하여 본 연구의 타당성을 확인할 수 있었다. 본 연구의 수치수로를 파랑-흐름 공존장에서 주어지는 복잡한 물리 현상 규명과 파-흐름-잠제의 상호간섭해석에 적용하여, 유속장, 와도장, 자유수면과 와도와의 관계 등을 논의하였다.

• 해양환경안전학회:학술대회논문집
• /
• 해양환경안전학회 2007년도 추계학술발표회
• /
• pp.9-14
• /
• 2007

한국 남해안 거제도 앞바다에 구축된 인공용승구조물로 인하여 발생하는 유동 변화를 파악하기 위해 ADCP(Acoustic Doppler Current Profiler)를 이용한 정선관측을 2003년 하계 및 추계에 실시하였다. 관측 결과 하계에는 수심 약 $30{\sim}40$ m를 기준으로 상층과 하층의 유동분포가 상이한 경계수심이 존재하였으며, 추계에는 이러한 현상이 3층 구조로 나타났다. 또한 연직유동성분은 수심과 지역에 따라 상승류와 하강류가 번갈아 분포하였으며 이러한 현상은 관측범위를 확장하였을 때도 유사한 유동분포를 보이고 있다. 한편 ADCP의 수평유동성분을 이용하여 계산된 연직전단(vertical shear) 및 상대와도(relative vorticity)는 상승류가 발생하는 지역에서 연직전단은 큰 값을 나타내었고, 상대와도는 +값으로 상승류의 방향을 나타내었다. 이러한 결과는 유동성분의 상승류 분포역과 유사하게 나타났다.

• 수산해양교육연구
• /
• 제6권2호
• /
• pp.198-216
• /
• 1994

The problem of promoting instructional effect using reorganizing the content of textbook is one of the major concerns of many education theorists and teachers. The results of many researches about above problem reveal that reorganizing the content of textbook promotes the ability of recall and problem solving of learners. The content structure of current navigation textbook revealed a categorical structure as its basic framework, though it seems to be a poor one. A categorical structure is known as providing an inferior information processing mechanism for learners than a learning hierarchy content structure is. Furthermore current content structure hasn't given any considerations to navigation in practice, spatial contexts and sequential events of ships from a harbor to another harbor. The learning hierarchy content structure has an advantage of giving learners more systematic and stronger knowledge networks than a categorical structure.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제54권8호
• /
• pp.371-377
• /
• 2005

This paper Presents the Potential gradient characteristics of structure grounding electrode when a test current flows through grounding electrode. In order to analyze the potential gradient of ground surface on structure grounding electrode, the reduced scale model has been used. The potential gradient has been measured and analyzed for types of structure using the hemispherical grounding simulation system in real time. The structures were designed through reducing real buildings and fabricated with four types on a scale of one-one hundred sixty. The supporter was made to put up with weight of structure and could move into vertical, horizontal, rotary direction. When a test current flowed through structure grounding electrodes, ground potential rise was the lowest value at electric cage type(type B). According to resistivity and absorption percentage In concrete attached to structure, the potential distribution of ground surface appeared differently.

• 전자공학회논문지A
• /
• 제31A권3호
• /
• pp.46-52
• /
• 1994

We investigated theoretically the current-voltage characteristics of resonant tunneling diodes with a single quantum well structure. using a self-consistent method. This method is a numerical analysis which is able to include the effects of the undoped spacer layer and the band bending by charge accumulation and depletion on the contact layers which have not been considered in the flat-band model reported by Esaki. so that it is better suited to explain experimental results. The structure used is an $AL_{0.5}Ga_{0.5}AS/GaAs/Al_{0.5}Ga_{0.5}AS$ single quantum well. In this work. we estimate the theoretical current-voltage characteristics of the same structure, and then, the dependence of the current-voltage curves on the thickness of undoped spacer layers sandwiched between the barrier and highly n-doped GaAs contact layer.

• ETRI Journal
• /
• 제17권1호
• /
• pp.1-10
• /
• 1995

We have achieved very low threshold current densities with high light output powers for InGaAs/ GaAs surface-emitting lasers using a periodic gain active structure in which three quantum wells are inserted in two-wavelength-thick (2${\lambda}$ ) cavity. Air-post type devices with a diameter of 20~40${\mu}m$ exhibit a threshold current density of 380~410$A/cm^2$. Output power for a 40${\mu}m$ diameter device reaches over 11 mW. A simple theoretical calculation of the threshold and power performances indicates that the periodic gain structure has an advantage in achieving low threshold current density mainly due to the high coupling efficiency between gain medium and optical field. The deterioration of power, expected from the long cavity length of $2{\lambda}$, is negligible.

• 전자공학회논문지A
• /
• 제32A권5호
• /
• pp.54-59
• /
• 1995

We have proposed a novel self-aligned offset gated polysilicon TFTs device without an offset mask in order to reduce a leakage current and suppress a kink effect. The photolithographic process steps of the new TFTs device are identical to those of conventional non-offset structure TFTs and an additional mask to fabricate an offset structure is not required in our device due to the self-aligned process. The new device has demonstrated a lower leakage current and a better ON/OFF current ratio compared with the conventional non-offset device. The new TFT device also exhibits a considerable reduction of the kink effect because a very thin film TFT devices may be easily fabricated due to the elimination of contact over-etch problem.