• Title/Summary/Keyword: current pulse

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Nitric Oxide (NO) Inhibites the Neuronal Activities in the Rat Nucleus Tractus Solitarius

  • Kim, Mi-Won;Park, Mun-Sung;Ryu, Sun-Youl;Jung, Ji-Yeon;Kim, Sun-Hun;Kim, Min-Seok;Kim, Won-Jae;Jeong, Yeon Jin
    • The Korean Journal of Physiology and Pharmacology
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    • v.8 no.1
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    • pp.7-15
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    • 2004
  • Nitric oxide (NO) system has been implicated in a wide range of physiological functions in the nervous system. However, the role of NO in regulating the neural activity in the gustatory zone of nucleus tractus solitarius (NTS) has not been established. The present study was aimed to investigate the role of NO in the gustatory NTS neurons. Sprague-Dawley rats, weighing about 50 g, were used. Whole cell patch recording and immunohistochemistry were done to determine the electrophysiological characteristics of the rostral gustatory nucleus of the tractus solitaries and distribution of NO synthases (NOS). Neuronal NOS (nNOS) immunoreactivity was strongly detected along the solitary tract extending from rostral to caudal medulla. Resting membrane potentials of NTS neurons were $-49.2{\pm}2\;mV$ and action potential amplitudes were $68.5{\pm}2\;mV$ with a mean duration measured at half amplitude of $1.7{\pm}0.3\;ms$. Input resistance, determined from the response to a 150 ms, -100 pA hyperpolarizing current pulse, was $385{\pm}15\;M{\Omega}$, Superfusion of SNAP or SNP, NO donors, produced either hyperpolarization (68%), depolarization (5%), or no effect (27%). The hyperpolarization was mostly accompanied by a decrease in input resistance. The hyperpolarization caused by SNAP or SNP increased the time to initiate the first action potential, and decreased the number of action potentials elicited by current injection. SNP or SNAP also markedly decreased the number of firing neural discharges of the spontaneous NTS neural activity under zero current. Superfusion of L-NAME, a NOS inhibitor, slightly depolarized the membrane potential and increased the firing rate of NTS neurons induced by current injection. ODQ, a soluble guanylate cyclase inhibitor, ameliorated the SNAP-induced changes in membrane potential, input resistance and firing rates. 8-Br-cGMP, a non-degradable cell-permeable cGMP, hyperpolarized the membrane potential and decreased the number of action potentials. It is suggested that NO in the gustatory NTS has an inhibitory role on the neural activity of NTS through activating soluble guanylate cyclase.

The Effect of Hand Massage on Pain and Anxiety Related to Chest Tube Removal in Patients with a Lobectomy (손마사지가 폐엽 절제술 환자의 흉관 제거시 통증과 불안에 미치는 영향)

  • Song Yeoung-Suk
    • Journal of Korean Academy of Fundamentals of Nursing
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    • v.9 no.1
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    • pp.27-44
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    • 2002
  • The main purpose of this study was to identify the effect of hand massage on pain and anxiety related to chest tube removal in patients with a lobectomy. The research design of this study was a nonequivalent control group non-synchronized design. Of the twenty nine adult subjects, fourteen were assigned to the experimental group and fifteen to the control group. The data were obtained over 3 months from a medical center in Seoul. The instruments used to assess trait state anxiety was the Spielberger Trait-State anxiety Inventory. For pain and psychological anxiety. The Visual Analogue Scale was used. Hiko analogue sphygmo-manometer(2001) was used to check blood pressure and pulse rate as indicators of physiological anxiety Subjects in the experimental group received hand massage for 5 minutes just before chest tube was removed, and subjects assigned to the control group did not receive hand massage. Data were analysed with $x^2$-test and Mann-Whitney U test using the SPSSWIN 10.0 program. The results of the study are as follows : 1. Hypothesis 1: 'there will be a significant difference between two groups in the level of pain after chest tube removal' was supported (u = 23.00, p < 0.001). 2. Hypothesis 2: 'there will be a significant difference between the two groups in the level of psychological anxiety after chest tube removal' was supported (u = 3.00, p < 0.001). 3. Hypothesis 3: 'there will be a significant difference between the two groups in physiological anxiety(systolic, diastolic blood pressure and pulse rate) after chest tube removal' was supported(u =55.50, p = 0.01 ; u = 41.50, p = 0.01 ; u = 20.50, p < 0.001, relatively). The findings of this study indicate that hand massage is effective for pain and anxiety related to chest tube removal in patients with lobectomy. Therefore, hand massage is recommended as an effective nursing intervention for relieving pain and anxiety in patients undergoing chest tube removal. Further research is needed to identify the proper duration and timing to achieve the optimal effect of hand massage. A larger subject population is required to apply the current findings to the general population. Further research is also needed to assess the effects of hand massage in other patient subsets. Finally, it would be interesting to see if the effects of hand massaging would be attenuated when performed by a non-medical specialist.

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A Study on Threshold Voltage Degradation by Loss Effect of Trapped Charge in IPD Layer for Program Saturation in a MLC NAND Flash Memory (멀티레벨 낸드 플래쉬 메모리 프로그램 포화 영역에서의 IPD 층에 트랩된 전하의 손실 효과에 의한 문턱 전압 저하 특성에 대한 연구)

  • Choi, Chae-Hyoung;Choi, Deuk-Sung;Jeong, Seung-Hyun
    • Journal of the Microelectronics and Packaging Society
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    • v.24 no.3
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    • pp.47-52
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    • 2017
  • This research scrutinizes the data retention characteristics of the MLC NAND Flash Memory instigated by the loss effect of trapped charge when the memory is in the state of program saturation. It is attributed to the threshold voltage saturation phenomenon which engenders an interruption to the linear increase of the voltage in the memory cell. This phenomenon is occasioned by the outflow of the trapped charge from the floating gate to the control gate, which has been programmed by the ISPP (Incremental Step Pulse Programming), via Inter-Poly Dielectric (IPD). This study stipulates the significant degradation of thermal retention characteristics of threshold voltage in the saturation region in contrast to the ones in the linear region. Thus the current study evaluates the data retention characteristics of voltage after the program with a repeated reading test in various measurement conditions. The loss effect of trapped charge is found in the IPD layer located between the floating gate and the control gate especially in the nitride layer of the IPD. After the thermal stress, the trapped charge is de-trapped and displays the impediment of the characteristic of reliability. To increase the threshold saturation voltage in the NAND Flash Memory, the storage ability of the charge in the floating gate must be enhanced with a well-thought-out designing of the module in the IPD layer.

Design of a step-up DC-DC Converter using a 0.18 um CMOS Process (0.18 um CMOS 공정을 이용한 승압형 DC-DC 컨버터 설계)

  • Lee, Ja-kyeong;Song, Han-Jung
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.17 no.6
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    • pp.715-720
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    • 2016
  • This paper proposes a PWM (Pulse Width Modulation) voltage mode DC-DC step-up converter for portable devices. The converter, which is operated with a 1 MHz switching frequency, is capable of reducing the mounting area of passive devices, such as inductor and capacitor, and is suitable for compact mobile products. This step-up converter consists of a power stage and a control block. The circuit elements of the power stage are an inductor, output capacitor, MOS transistors Meanwhile, control block consist of OPAMP (operational amplifier), BGR (band gap reference), soft-start, hysteresis comparator, and non-overlap driver and some protection circuits (OVP, TSD, UVLO). The hysteresis comparator and non-overlapping drivers reduce the output ripple and the effects of noise to improve safety. The proposed step-up converter was designed and verified in Magnachip/Hynix 0.18um 1-poly, 6-metal CMOS process technology. The output voltage was 5 V with a 3.3 V input voltage, output current of 100 mA, output ripple less than 1% of the output voltage, and a switching frequency of 1 MHz. These designed DC-DC step-up converters could be applied to the Personal Digital Assistants(PDA), cellular Phones, Laptop Computer, etc.

Circuit Modeling and Simulation of Active Controlled Field Emitter Array for Display Application (디스플레이 응용을 위한 능동 제어형 전계 에미터 어레이의 회로 모델링 및 시뮬레이션)

  • Lee, Yun-Gyeong;Song, Yun-Ho;Yu, Hyeong-Jun
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.38 no.2
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    • pp.114-121
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    • 2001
  • A circuit model for active-controlled field emitter array(ACFEA) as an electron source of active-controlled field emission display(ACFED) has been proposed. The ACFEA with hydrogenated amorphous silicon thin-film transistor(a-Si:H TFT) and Spindt-type molibdenum tips (Spindt-Mo FEA) has been fabricated monolithically on the same glass. A-Si:H TFT is used as a control device of field emitters, resulting in stabilizing emission current and lowering driving voltage. The basic model parameters extracted from the electrical characteristics of the fabricated a-Si:H TFT and Spindt-Mo FEA were implemented into the ACFEA model with a circuit simulator SPICE. The accuracy of the equivalent circuit model was verified by comparing the simulated results with the measured one through DC analysis of the ACFEA. The transient analysis of the ACFEA showed that the gate capacitance of FEA along with the drivability of TFT strongly affected the response time. With the fabricated ACFEA, we obtained a response time of 15$mutextrm{s}$, which was enough to make 4bit/color gray scale with the pulse width modulation (PWM).

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High-Speed Cu Filling into TSV and Non-PR Bumping for 3D Chip Packaging (3차원 실장용 TSV 고속 Cu 충전 및 Non-PR 범핑)

  • Hong, Sung-Chul;Kim, Won-Joong;Jung, Jae-Pil
    • Journal of the Microelectronics and Packaging Society
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    • v.18 no.4
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    • pp.49-53
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    • 2011
  • High-speed Cu filling into a through-silicon-via (TSV) and simplification of bumping process by electroplating for three dimensional stacking of Si dice were investigated. The TSV was prepared on a Si wafer by deep reactive ion etching, and $SiO_2$, Ti and Au layers were coated as functional layers on the via wall. In order to increase the filling rate of Cu into the via, a periodic-pulse-reverse wave current was applied to the Si chip during electroplating. In the bumping process, Sn-3.5Ag bumping was performed on the Cu plugs without lithography process. After electroplating, the cross sections of the vias and appearance of the bumps were observed by using a field emission scanning electron microscope. As a result, voids in the Cu-plugs were produced by via blocking around via opening and at the middle of the via when the vias were plated for 60 min at -9.66 $mA/cm^2$ and -7.71 $mA/cm^2$, respectively. The Cu plug with a void or a defect led to the production of imperfect Sn-Ag bump which was formed on the Cu-plug.

Characterization of Ferroelectric $SrBi_2Ta_2O_9$ Thin Films Deposited by RF Magnetron Sputtering With Various Annealing Temperatures (RF magnetron sputtering으로 제조된 강 유전체 $SrBi_2Ta_2O_9$ 박막의 열처리 온도에 따른 특성 연구)

  • 박상식;양철훈;윤순길;안준형;김호기
    • Journal of the Korean Ceramic Society
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    • v.34 no.2
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    • pp.202-208
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    • 1997
  • Bi-layered SrBi2Ta2O9(SBT) films were deposited on Pt/Ti/SiO2/Si sibstrates by rf magnetron sputt-ering at room temperature and then were annealed at 75$0^{\circ}C$, 80$0^{\circ}C$ and 85$0^{\circ}C$ for 1 hour in oxygen at-mosphere. The film composition of SrBi2Ta2O9 was obtained after depositing at room temperature and annealing at 80$0^{\circ}C$. Excess 20mole% Bi2O3 and 30 mole% SrCO3 were added to the target to compensate for the lack of Bi and Sr in SBT film. 200 nm thick SBT film exhibited and dense microstructure, adielectric constant of 210, and a dissipation factor of 0.05 at 1 MHz frequency. The films exhibited Curie temperature of 32$0^{\circ}C$ and a dielectric constant of 314 at that temperature under 100 kHz frequency. The remanent polarization(2Pr) and the coercive field(2Ec) of the SBT films were 9.1 $\mu$C/$\textrm{cm}^2$ and 85 kV/cm at an applied voltage of 3V, resspectively and the SBT film showed a fatigue-free characteristics up to 1010 cy-cles under 5V bipolar pulse. The leakage current density of the SBT film was about 7$\times$10-7A/$\textrm{cm}^2$ at 150 kV/cm. Fatigue-free SBT films prepared by rf magnetron sputtering can be suitable for application to non-volatile memory device.

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A Study on the Utility Interactive Photovoltaic System Using a Chopper and PWM Voltage Source Inverter for Air Conditioner a Clinic room (병실 냉.난방을 위한 초퍼와 PWM 전압형 인버터를 이용한 계통 연계형 태양광 발전시스템에 관한 연구)

  • Hwang, L.H.;Na, S.K.
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.9 no.2
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    • pp.360-369
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    • 2008
  • The solar cells should be operated at the maximum power point because its output characteristics were greatly fluctuated on the variation of insolation, temperature and load. It is necessary to install an inverter among electric power converts by means of the output power of solar cell is DC. The inverter is operated supply a sinusoidal current and voltage to the load and the interactive utility line. In this paper, the proposes a photovoltaic system is designed with a step up chopper and single phase PWM voltage source inverter. Synchronous signal and control signal was processed by one-chip microprocessor for stable modulation. The step up chopper is operated in continuous mode by adjusting the duty ratio so that the photovoltaic system tracks the maximum power point of solar cell without any influence on the variation of insolation and temperature for solar cell has typical dropping character. The single phase PWM voltage source inverter is consists of complex type of electric power converter to compensate for the defect, that is, solar cell cannot be develop continuously by connecting with the source of electric power for ordinary using. It can be cause the efect of saving electric power, from 10 to 20%. The single phase PWM voltage source inverter operates in situation, that its output voltage is in same phase with the utility voltage. The inverter are supplies an ac power with high factor and low level of harmonics to the load and the utility power system.

Effect of Electric Stimulation on Parthenogenesis of In Vitro Matured Oocytes from Korean Native Cows (한우 체외성숙란의 단위발생에 대한 전기자극의 효과)

  • 노규진;공일근;곽대오;이효정;최상용;박충생
    • Journal of Embryo Transfer
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    • v.9 no.2
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    • pp.145-152
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    • 1994
  • The suitable electric stimulation is essential for activation and fusion of oocytes before or after nuclear transplantation The present study was undertaken to determine the optirnal condition for the parthenogenetic activation of in vitro rnatured(IVM) bovine oocytes by electric stimulation. Different direct current(DC) electric voltage of 1.0, 1.5 and 2.0 kV/cm and pulse duration of 30, 60 and 120 $\mu$sec were applied to the JVM nocytes in 0.3 M mannitol solution containing each 100 $\mu$M CaCl$_2$ and MgCl$_2$. IVM occytes at 24, 28 and 32 hours Post-maturation(hpm) were also electrically stimulated at 1.5 kV /cm, for 60 $\mu$ sec. The stimulated nocytes were then co-cultured in TCM-199 solution containing 10% fetal calf serum with bovine oviductal epithelial cells for 7~9 days in a 5% $CO_2$ incubator at 39$^{\circ}C$ ~ Their activation and in vitro development to morula and blastocyst were assessed under an inverted microscope. The higher activation rates 62.8 and 63.4% and in vitro de- velopment rates to morula and blastocyst 5.1 and 10.9% were shown in the oocytes stimulated at the voltage of 1.0 and 1.5 kV/cm than 2.0 kV/cm, respectively. No signifi- cantly(P<0.05) different activation rate was shown in JVM oocytes stimulated for 30, 60 and 120 $\mu$sec, but developmental rates to morula and blastocyst was significantly(P<0.05) higher in the oocytes stimulated for 30 $\mu$sec(6~3%) and 60 $\mu$sec(10~0%) than 120 $\mu$sec(0~ 0%). The aged oocytes at 28 and 30 hpm showed significantly(P<0.05) higher activation rates(72~7 and 79.7%) than the oocytes at 24 hpm(50~9%)~ Also, their developmental rates to morula and blastocyst were significantly(P<0.05) higher in the nocytes at 28(14.3%) and 32 hpm(15.9%) than 24 hpm(3.6%). From these results, it can be suggested that the optimal electric stimulation for IVM bovine occytes is a DC voltage between 1.0 and 1.5 kV/cm, pulse duration of 30 or 60 $\mu$sec, and the optimal age of IVM oocytes for electric activation is at 32 hpm.

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Electrochemical Analysis and Applications of Tetracycline Transfer Reaction Process at Liquid/liquid Interfaces (액체/액체 계면에서 테트라사이클린 전이반응의 전기화학적 분석 및 응용)

  • Liu, XiaoYun;Han, Hye Youn;Goh, Eunseo;Lee, Hye Jin
    • Applied Chemistry for Engineering
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    • v.28 no.5
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    • pp.506-512
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    • 2017
  • The transfer reaction characteristics of tetracycline (TC) across a polarized water/1,2-dichloroethane (1,2-DCE) interface was studied via controlling both pH and ionic strength of the aqueous phase in conjunction with cyclic and differential pulse voltammetries. Formal transfer potential values of differently charged TC ionic species at the water/1,2-DCE interface were measured as a function of pH values of the aqueous solution, which led to establishing an ionic partition diagram for TC. As a result, we could identify which TC ionic species are more dominant in the aqueous or organic phase. Thermodynamic properties including the formal transfer potential, partition coefficient and Gibbs transfer energy of TC ionic species at the water/1,2-DCE interface were also estimated. In order to construct an electrochemical sensor for TC, a single microhole supported water/polyvinylchloride-2-nitrophenyloctylether (PVC-NPOE) gel interface was fabricated. A well-defined voltammetric response associated with the TC ion transfer process was achieved at pH 4.0 similar to that of using the water/1,2-DCE interface. Also the measured current increased proportionally with respect to the TC concentration. A $5{\mu}M$ of TC in pH 4.0 buffer solution with a dynamic range from $5{\mu}M$ to $30{\mu}M$ TC concentration could be analyzed when using differential pulse stripping voltammetry.