• Title/Summary/Keyword: crystallization characteristics

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Characteristics of $Ag_x(Ge_2Sb_2Te_5)_{1-x}$ (x= 0, 0.05, 0.1) thin films for PRAM (PRAM을 위한 $Ag_x(Ge_2Sb_2Te_5)_{1-x}$ (x= 0, 0.05, 0.1) 박막의 특성)

  • Kim, Sung-Won;Song, Ki-Ho;Lee, Hyun-Yong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.21-22
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    • 2008
  • In the paper, we report several experimental data capable of evaluating the phase transformation characteristics of $Ag_x(Ge_2Sb_2Te_5)_{1-x}$ (x =0, 0.05, 0.1) thin films. The $Ag_x(Ge_2Sb_2Te_5)_{1-x}$ phase change thin films have been prepared by thermal evaporation. The crystallization characteristics of amorphous$Ag_x(Ge_2Sb_2Te_5)_{1-x}$ thin films were investigated by using nano-pulse scanner with 658 nm laser diode (power; 1~17 mW, pulse duration; 10~460 ns) and XRD measurement. It was found that the more Ag is doped, the more crystallization speed was 50 improved. In comparision with $Ge_2Sb_2Te_5$ thin film, the sheet resistance$(R_{amor})$ of the amorphous $Ag_x(Ge_2Sb_2Te_5)_{1-x}$ thin films were found to be lager than that of $Ge_2Sb_2Te_5$ film($R_{amor}$ $\sim10^7\Omega/\square$ and $R_{cryst}$ 10 $\Omega/\square$). That is, the ratio of $R_{amor}/R_{cryst}$ was evaluates to be $\sim10^6$ This is very helpful to writing current reduction of phase-change random acess memory.

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Recovery of N and P Resources from Animal Wastewater by Struvite Crystallization (Struvite 결정화에 의한 축산폐수로 부터 질소.인 자원의 재생)

  • Jo, W.S.;Yoon, S.J.;Ra, C.S.
    • Journal of Animal Science and Technology
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    • v.45 no.5
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    • pp.875-884
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    • 2003
  • Operational parameters for struvite crystallization, as a process to recover nitrogen and phosphorus resources from animal wastewater, were studied in this research. Crystallization distinctive of NH$_4$-N and PO$_4$$^{3-}$ in accordance to chemical sources, influent pH, aeration and stirring was examined using 2L of working volume of struvite reactor. Also, to find an effective treatment process combining with electrolysis method, removal characteristics of NH$_4$-N and PO$_4$$^{3-}$ in 6 different processes was tested. As chemical sources for the derivation of struvite formation, MgSO$_4$ and MgCl$_2$ were superior to CaCO$_3$ and CaCl$_2$. From experiment which was conducted to know the effects of aeration and stirring on struvite formation, it was revealed that aeration stimulated the crystallization reaction by inducing faster pH increase. While 90% of P removal was achieved within 1 hour under aeration, 14 hours was consumed under stirring condition. Struvite formation under aeration was affected by influent pH. No crystallization was observed at pH 5 level, but active crystallization reaction was induced over pH 6.0. 95% of P removal by struvite formation at pH 6, 7 and 9 was achieved within 3h, 2h and 10 min., respectively. However, over pH 10, operational problem due to excessive foam formation occurred, and blunting of crystallization reaction was observed at pH 11. When consider the pH range of animal wastewater, pH 7 to 9, efficient struvite formation could be achieved by simple aeration, without any chemical usage for pH adjustment. Among tested processes, the treatment process which electrolyzing the supernatant from struvite reactor, providing air to both reactors, showed best pollutant removal efficiencies. In this combined process, the removal efficiencies of NH$_4$-N and PO$_4$$^{3-}$ was 86% and 98%, respectively, and 92.4% of color removal was obtained.

Eutectic-based Phase-change Recording Materials for 1-2X and 4X Speed Blu-ray Disc

  • Seo Hun;Lee Seung-Yoon;Lee Kwang- Lyul;Kim Jin-Hong;Bae Byeong-Soo
    • Transactions of the Society of Information Storage Systems
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    • v.1 no.1
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    • pp.34-41
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    • 2005
  • We report some recent results in the rewritable Blu-ray Disc with enhanced overwrite cyclability by using the growth dominant eutectic based Ge(Sb70Te30)+Sb recording layer, GeN interface layer and write strategy optimization. We have developed phase-change optical media with appropriate write strategy for 36(i.e., 1X)-72Mbps(i.e., 2X) dual speed Blu-ray Disc system and fur the future high speed optical data storage. For recording layer, eutectic-based Ge(Sb70Te30)+Sb material was used and Sb/Te ratio and Ge content were optimized to obtain proper erasability and archival stability of recorded amorphous marks. The recording layer is wrapped up in GeN interface layers to obtain overwrite cyclability and higher crystallization speed. In addition, we designed appropriate write strategy so called Time-Shifted Multipulse (TSMP) write strategy where starting position of multipulse parts are shined from reference clock. With this write strategy, the jitter characteristics of the disc was improved and we found that leading edge jitter was improved much more than trailing edge jitter in 1X-2X speed recording. Finally, we investigated the higher speed feasibility of 144Mbps(i.e., 4X) by adopting some elemental doping to the eutectic based Ag-In-Sb-Te recording layer and structural optimization of constitution layers in Blu-ray Disc. In the paper, we report the effect of Sn addition for the feasibility of higher speed recording. The addition of Sn shows increases of the crystallization speed of phase change recording layer.

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Chemical Compositions and Thermal Characteristics of Rice Husk and Rice Husk Ash in Korea (왕겨 및 왕겨재의 화학적 조성 성분과 열적 특성)

  • Park S. J.;Kim M. H.;Shin H. M.
    • Journal of Biosystems Engineering
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    • v.30 no.4 s.111
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    • pp.235-241
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    • 2005
  • For better and large utilization of rice husk, the production and consumption status, differences in chemical composition and heating value due to region and variety, and thermogravimetric characteristic of rice husk were studied. In addition, the differences in chemical composition due to region and variety and the crystallization characteristic of rice husk ash were also studied. Approximately 800,000 M/T of rice husk was produced per year in Korea, which is about $18\%$ of the paddy production by weight. Noticeable varietal and regional difference pattern in chemical composition was not found among the domestic rice husk samples. Their average ash content and higher heating value were $16.4\%$ and 16,660 kJ/kg by dry basis, respectively. A relation seemed to exist between the carbon content and higher heating value. Noticeable difference pattern in chemical composition was not found among the domestic rice husk ash samples. The $SiO_2$ contents were a little low, the maximum being $92.9\%,$ and the contents of major components such as CaO, MgO, and $K_2O$ were also lower compared with foreign rice husk ash due to the deficiency of compost matters in domestic soils. Thermogravimetry study showed the thermal decomposition of rice husk started at about $250^{\circ}C,$ followed by relatively fast combustion of combustible gas until the temperature rose to $350^{\circ}C.$ After $350^{\circ}C,$ combustion of the carbon component proceeded relatively slowly as the temperature increased. Therefore, the ignition temperature of the rice husk could be estimated around $300^{\circ}C$. Crystallization of $SiO_2$ in the rice husk ash was found from the combustion temperature of $750^{\circ}C$ and became distinctly when the combustion temperature exceeded $900^{\circ}C$. The ash became darker with $SiO_2$ crystallization.

Dynamic Characteristics of Metal-induced Unilaterally Crystallized Polycrystalline Silicon Thin-film Transistor Devices and Circuits Fabricated with Precrystallization (선결정화법을 이용한 금속 유도 일측면 결정화에 의해 제작된 다결정 실리콘 박막 트랜지스터 소자 및 회로의 전기적 특성 개선 효과)

  • Hwang, Wook-Jung;Kang, Il-Suk;Kim, Young-Su;Yang, Jun-Mo;Ahn, Chi-Won;Hong, Soon-Ku
    • Journal of the Korean Vacuum Society
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    • v.17 no.5
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    • pp.461-465
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    • 2008
  • The phase transformation in a film influences its surrounding. Effects of the precrystallization method, which removes influences on gate oxide caused by lateral crystallization, in metal-induced unilaterally crystallized polycrystalline silicon thin-film transistor devices and circuits were studied. Device by the method was shown to have a higher current drive, compared with conventional postcrystallized device. Moreover, we studied DC bias-induced changes in the performance of ring oscillator. PMOS inverters fabricated using precrystallized silicon films have very high dynamic and stable performance, compared with inverters fabricated using postcrystallized silicon films.

Effect of Graft Copolymer Composition on the Compatibility of Biodegradable PCL/PCL-g-PEG Blend (PCL/PCL-g-PEG 생분해성 블렌드에서 그래프트 공중합체의 조성에 따른 상용성의 영향)

  • Cho, Kuk-Young;Lee, Ki-Seok;Park, Jung-Ki
    • Polymer(Korea)
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    • v.33 no.3
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    • pp.248-253
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    • 2009
  • Blend films based on the poly($\varepsilon$-caprolactone) (PCL) and amphiphilic biodegradable polymer, poly(ethylene glycol) grafted poly($\varepsilon$-caprolactone) (PCL-g- PEG), were prepared with different blend ratios in order to develop new biomedical material. PCL was the main component in the blend. The miscibility and characteristics of the blends were investigated. The crystallization temperature of the blend shifted to high temperatures with an increase of the graft copolymer contents when the homopolymer PCL was the main component of the blend. The PEG side chain in the blend affected the crystallization rate of the PCL crystals in the blend and alternating extinction bands were observed by optical microscopy. The protein adhesion behavior of the film was influenced by the water uptake of the film.

Synthetic Characteristics of AlPO$_4$-5 Molecular Sieve (AlPO$_4$-5 분자체의 합성 특성)

  • Sung Hwa Jhung;Suk Bong Hong;Young Sun Uh;Hakze Chon
    • Journal of the Korean Chemical Society
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    • v.37 no.10
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    • pp.867-873
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    • 1993
  • Influences of crystallization time and $H_2O/Al_2O_3$ ratio of the reaction mixtures on the synthesis of AlPO$_4$-5 molecular sieve have been studied by X-ray powder diffraction, nitrogen adsorption, scanning electron microscope (SEM), and solid state $^{27}$Al magic angle spinning nuclear magnetic resonance (MAS NMR) techniques. The degree of crystallinity of AlPO$_4$-5 follows a sigmoid pattem as crystallization time increases. The induction period is shorter than 1 h when the crystallization process is carried out at 150$^{\circ}$C. The conversion of reactants to product, AlPO$_4$-5, can be clearly observed, and all of the determined physical properties change abruptly after about 2 h. It is found that increase in $H_2O/Al_2O_3$ ratio of the reaction mixtures not only changes the crystal morphology from aggregates to hexagonal single crystals, but also results in the formation of longer AlPO$_4$-5 crystals.

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The Characteristics of High Temperature Crystallized Poly-Si for Thin Film Transistor Application (박막트랜지스터 응용을 위한 고온 결정화된 다결정실리콘의 특성평가)

  • 김도영;심명석;서창기;이준신
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.53 no.5
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    • pp.237-241
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    • 2004
  • Amorphous silicon (a-Si) films are used in a broad range of solar cell, flat panel display, and sensor. Because of the greater ease of deposition and lower processing temperature, thin films are widely used for thin film transistors (TFTs). However, they have lower stability under the exposure of visible light and because of their low field effect mobility ($\mu$$_{FE}$ ) , less than 1 c $m^2$/Vs, they require a driving IC in the external circuits. On the other hand, polycrystalline silicon (poly-Si) thin films have superiority in $\mu$$_{FE}$ and optical stability in comparison to a-Si film. Many researches have been done to obtain high performance poly-Si because conventional methods such as excimer laser annealing, solid phase crystallization and metal induced crystallization have several difficulties to crystallize. In this paper, a new crystallization process using a molybdenum substrate has been proposed. As we use a flexible substrate, high temperature treatment and roll-to-roll process are possible. We have used a high temperature process above 75$0^{\circ}C$ to obtain poly-Si films on molybdenum substrates by a rapid thermal annealing (RTA) of the amorphous silicon (a-Si) layers. The properties of high temperature crystallized poly-Si studied, and poly-Si has been used for the fabrication of TFT. By this method, we are able to achieve high crystal volume fraction as well as high field effect mobility.

A Systematic Method for SPICE Simulation of Electrical Characteristics of Poly-Si TFT-LCD Pixel (SPICE를 사용한 다결정 실리콘 TFT-LCD 화소의 전기적 특성 시뮬레이션 방법의 체계화)

  • Son, Myung-Sik;Ryu, Jae-Il;Shim, Seong-Yung;Jang, Jin;Yoo Keon-Ho
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.38 no.12
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    • pp.25-35
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    • 2001
  • In order to analyze the electrical characteristics of complicated thin film transistor-liquid crystal display (TFT-LCD) array circuits, it is indispensible to use simulation programs such as PSPICE and AIM-SPICE. In this paper, we present a systematic method of extracting the input parameters of poly-Si TFT for SPICE simulations. This method was applied to two different types of poly-Si TFTs, fabricated by excimer laser annealing and silicide mediated crystallization methods, and yielded good fitting results to experimental data. Among the SPICE simulators, PSPICE has the graphic user interface feature making the composition of complicated circuits easier. We added successfully a poly-Si TFT device model to the PSPICE simulator, and analyzed easily the electrical characteristics of pixels considering the line RC delay. The results of this work would contribute to efficient simulations of poly-Si TFT-LCD arrays.

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Recrystallization Characteristics of Solar Salt After Removing of Bittern and Impurities (간수와 불순물을 제거시킨 천일염의 재 결정화 특성)

  • Lee, Ye-Kyung;Kim, Soon-Dong
    • Journal of the Korean Society of Food Science and Nutrition
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    • v.37 no.2
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    • pp.203-209
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    • 2008
  • Recrystallization characteristics of salt after removing bittern and impurities from solar salt (SD) were investigated. To remove the bittern, the SD was treated at 30, 40 and $50^{\circ}C$ under 95% humidity. 86% of the bittern was removed when the SD was kept at $30^{\circ}C$ for three weeks. Total amount of impurity in SD was 6.94% (w/w) with organic impurity (5.58%) and inorganic impurity (1.36%). Most organic impurities (89%) were soluble. When the SD was roasted at $350^{\circ}C$ for 40 minutes, 90.14% of the soluble organic impurities were removed; however, the removable organic impurity was reduced, when the SD roasted for 50 minutes at $350^{\circ}C$. L* value decreased while a* and b* values increased when the SD was roasted until 40 minutes at $350^{\circ}C$. In contrast, L* value increased while a*, b* values decreased with SD roasted over 50 minutes at $350^{\circ}C$. The size of recrystallized pure salt was positively correlated to temperature and depth of salt solution, while the crystallization time was negatively correlated to temperature and salinity. Yield of recrystallized salt was negatively correlated to temperature. Overall acceptability tended to increase at low crystallization temperature and high salinity.