[KSCI] Korea Science Citation Index Service

http://dx.doi.org/10.5757/JKVS.2008.17.5.461

Dynamic Characteristics of Metal-induced Unilaterally Crystallized Polycrystalline Silicon Thin-film Transistor Devices and Circuits Fabricated with Precrystallization

Hwang, Wook-Jung (Advanced Technology Center for Information Electronic Materials and Components, National Nanofab Center)
Kang, Il-Suk (Advanced Technology Center for Information Electronic Materials and Components, National Nanofab Center)
Kim, Young-Su (National Nanofab Center)
Yang, Jun-Mo (Advanced Technology Center for Information Electronic Materials and Components, National Nanofab Center)
Ahn, Chi-Won (Advanced Technology Center for Information Electronic Materials and Components, National Nanofab Center)
Hong, Soon-Ku (Department of Materials Science and Engineering, Chungnam National University)

Publication Information

Journal of the Korean Vacuum Society / v.17, no.5, 2008 , pp. 461-465 More about this Journal

Abstract

The phase transformation in a film influences its surrounding. Effects of the precrystallization method, which removes influences on gate oxide caused by lateral crystallization, in metal-induced unilaterally crystallized polycrystalline silicon thin-film transistor devices and circuits were studied. Device by the method was shown to have a higher current drive, compared with conventional postcrystallized device. Moreover, we studied DC bias-induced changes in the performance of ring oscillator. PMOS inverters fabricated using precrystallized silicon films have very high dynamic and stable performance, compared with inverters fabricated using postcrystallized silicon films.

Keywords

Metal-induced unilateral crystallization; Polycrystalline silicon thin-film transistor; Precrystallization; ring oscillator;

Citations & Related Records

Reference

1	I. -S. Kang, S. -H. Han, and S. -K. Joo, Appl. Phys. Lett. 91, 092112 (2007) DOI ScienceOn
2	J. H. Lee, M. Y. Shin, K. C. Moon, and M. K. Han, Phys. Scripta. T114, 199 (2004) DOI ScienceOn
3	Z. Meng, M. Wang,and M. Wong, IEEE Trans. Electron Devices 47, 404 (2000) DOI ScienceOn
4	K. H. Kim, S. J. Park, K. S. Cho, W. S. Sohn, and J. Jang, SID Tech. Dig., 150 (2002)
5	A. Oishi, O. Fujii, T. Yokoyama, K. Ota, T. Sanuki, H. Inokuma, K. Eda, T. Idaka, H. Miyajima, S. Iwasa, H. Yamasaki, K. Oouchi, K. Matsuo, H. Nagano, T. Komoda, Y. Okayama, T. Matsumoto, K. Fukasaku, T. Shimizu, K. Miyano, T. Suzuki, K. Yahashi, A. Horiuchi, Y. Takegawa, K. Saki, S. Mori, K. Ohno, I. Mizushima, M. Saito, M. Iwai, S. Yamada, N. Nagashima, and F. Matsuoka, IEDM Tech. Digest, 239 (2005)
6	S. Docking and M. Sachdev, IEEE J. Solid-State Circ. 39, 533 (2004) DOI ScienceOn
7	R. B. Iverson and R. Reif, J. Appl. Phys. 62, 1675 (1987) DOI
8	N. -K. Song, M. -S. Kim, S. -H. Han, Y. -S. Kim, and S. -K. Joo, J. Electrochem. Soc. 154, H370 (2007) DOI ScienceOn
9	T. H. Kim, H. I. Kwon, J. D. Lee, and B. G. Park, Int. Microprocesses and Nanotechnology Conf. 2001, 240 (2001)
10	T. P. Leevard Pedersen, J. Kalb, W. K. Njoroge, D. Wamwangi, M. Wuttig, and F. Spaepen, Appl. Phys. Lett. 79, 3597 (2001) DOI ScienceOn