• Korean Journal of Materials Research
• /
• v.26 no.11
• /
• pp.598-603
• /
• 2016

The recent development of electro-optic devices and anticorrosion media has led to the necessity to investigate infrared optical systems with solid-solid interfaces of materials that often have the characteristic of amorphousness. One of the most promising classes of materials for those purposes seems to be the chalcogenide glasses. Chalcogenide glasses, based on the Ge-Sb-Se system, have drawn a great deal of attention because of their use in preparing optical lenses and transparent fibers in the range of 3~12 um. In this study, amorphous Ge-Sb-Se chalcogenide for application in an infrared optical product design and manufacture was prepared by a standard melt-quenching technique. The results of the structural, optical and surface roughness analysis of high purity Ge-Sb-Se chalcogenide glasses are reported after various annealing processes.

• Electrical & Electronic Materials
• /
• v.7 no.1
• /
• pp.7-14
• /
• 1994

Structural and optical characteristics in $SnO_2$/a-Se/Al sample by aging variation and applying constant voltage had been investigated. a-Se was varied with monoclinic structure and its surface was greatly exchanged. Its capacitance was first decreased and then increased and its photo-current, photo-voltage and photo-capacitance were increased gradually with day and applying voltage. From the results, crystallization of a-Se and dopant trap level formation had been identified. Also, it was acknowledged $SnO_2$/a-Se/Al sample is useful in photovoltaic and solid thin film cell.

• Economic and Environmental Geology
• /
• v.27 no.5
• /
• pp.441-449
• /
• 1994

The tourmalines distributed in the Sangdong area belong to the dravite-schorl series in terms of the cell dimensions and the chemical compositions. Geochemical characteristics of tourmalines indicate that Naedeogni granite and pegmatite appear to be derived from Li-poor and Fe-riched aplite rocks, but Nonggeori granite is derived from Ca-poor or Si-riched pelitic rocks. The Mg+Fe contents of tourmaline in Naedeogni granitoids are decreased from the granites to the pegmatites with the Fe contents increased while Mg contents decreased. It indicates the differentiation during the crystallization of tourmalines. These phenomena are coincided with the chemical variations from cores toward rims of the zonal tourmalines. Such a compositional variations in Nonggeori granite can not be observed.

• Proceedings of the KIEE Conference
• /
• 1997.07d
• /
• pp.1588-1590
• /
• 1997

The viewing angle characteristics of amorphous(a)-twisted nematic(TN)-liquid crystal display (LCD) on poly(vinyl)cinnamate (PVC) surfaces with photo polymerrization were investigated. It was found that the threshold voltage increases with increasing the polymerization of PVC surfaces. That the domain size of a-TN-LCD is affected by the surface crystallization with increasing the photo polymerization of the photo-alignment film. We observed that the viewing angle of a-TN-LCD increased with increasing the photo polymerization on PVC surfaces. Finally, we consider that the viewing angle of a-TN-LCD on PVC surfaces is large compared to a-TN-LCD on polyimide(PI) surface.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.53 no.8
• /
• pp.401-406
• /
• 2004

In this experimentation, we investigated the characteristics of electromagnetic wave absorption of ferroxplana powder and silicone rubber composite. Ferroxplana was prepared by flux method at low temperature. The crystallization, magnetic properties and particle morphology of the obtained ferroxplana powder were investigated by using XRD, VSM and SEM. The particle size of ferroxplana powder was 2∼4$\mu\textrm{m}$ at the ratio of R=26, The coercivity and saturation magnetization of ferroxplana powder increased slightly with increase of temperature, The magnetic loss was the main factor of electromagnetic wave absorption of ferroxplana powder and silicone rubber composite, The maximum reflection loss of composite was about -l5dB below 4GHz.

• Transactions on Electrical and Electronic Materials
• /
• v.4 no.5
• /
• pp.24-27
• /
• 2003

We have been investigated phase-change with temperature and electric field in chalcogenide Ge$_2$Sb$_2$Te$\sub$5/ thin film. T$\sub$c/(crystallization temperature) is confirmed by measuring the resistance with the varying temperature on the hotplate. We have measured I-V characteristics with Ge$_2$Sb$_2$Te$\sub$5/ chalcogenide thin film. It is compared with I-V characteristics after impress the variable pulse. The pulse has variable height and duration.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
• /
• 2001.06a
• /
• pp.89-95
• /
• 2001

The fretting wear characteristics of Zircaloy-4 tube at room and high temperature were Investigated experimentally. In this study, the number of cycles, slip amplitude and temperature were selected as main factors of fretting wear. The results of this research showed that the wear volume Increased with the Increase of slip amplitudes and the number of cycles but decreased with temperature and the coefficient of friction were observed different tendency between room and high temperature. According to SEM(EDS) only gross slip were observed on the surface of both specimens and compacted oxide were on worn surfaces. XRO patterns showed that the crystallization of ZrO$_2$ were observed on the worn surface at high temperature. The fretting wear were Investigated due to oxidation and accumulation of plastic flow.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.7
• /
• pp.525-531
• /
• 2011

In this paper, experimental analyses have been performed to compare the electrical characteristics of n channel LT(low temperature) and HT(high temperature) poly-Si TFTs(polycrystalline silicon thin film transistors) on quartz substrate according to activated step annealing. The size of the particles step annealed at low temperature are bigger than high temperature poly-Si TFTs and measurements show that the electric characteristics those are transconductance, threshold voltage, electric effective mobility, on and off current of step annealed at LT poly-Si TFTs are high more than HT poly-Si TFT's. Especially we can estimated the defect in the activated grade poly crystalline silicon and the grain boundary of LT poly-Si TFT have more high than HT poly-Si TFT's due to high off electric current. Even though the size of particles of step annealed at low temperature, the electrical characteristics of LT poly-Si TFTs were investigated deterioration phenomena that is decrease on/off current ratio depend on high off current due to defects in active silicon layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.11
• /
• pp.956-960
• /
• 2009

The characteristics of organic films can be affected by the temperature of evaporation source because the temperature of evaporation source has an effect on substrate temperature during OLED fabrication process using the thermal evaporation. To investigate the characteristics of OLED devices fabricated by using thermally damaged organic films, I-V-L and half life-time in OLED devices fabricated with various substrate temperatures were measured. During emission layer(EML) evaporation, OLED devices with a structure of ITO(100 nm)/ELM200(50 nm)/NPB(30 nm)/$Alq_3$(55 nm)/LiF(0.7 nm)/Al(100 nm) were fabricated at various substrate temperatures(room temperature, $30^{\circ}C$, $40^{\circ}C$, and $50^{\circ}C$). The characteristics of current density and luminance versus applied voltage in OLED devices fabricated shows that many electrical currents flowed and high brightness appeared at low voltage, but that the lifetime of OLED devices dropped suddenly. This phenomenon explained that the crystallization of $Alq_3$ thin film appeared owing to the substrate heating during evaporation.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2003.07a
• /
• pp.237-240
• /
• 2003

This paper reports the characteristics of TFTs, formed inside a location-controlled grain: "single-crystalline" Si TFTs (c-Si TFTs). Position of the grains were controlled with a great precision by "${\mu}-Czochralski$ (grain-filter) process". Effects of process parameters, such as, deposition method of gate $SiO_2$, crystallization energy density and position of the channel with respect to the grain filters on TFT characteristics is investigated. It is concluded that the characteristics of TFTs drastically improved by avoiding the grain filter from the channel region. With TFTs having the current-flow direction parallel to radial direction from the grain-filter, electron mobility and subthreshold swing of 600 $cm^2/Vs$ and 0.21 V/dec. respectively are obtained.