• Journal of the Korean Society of Clothing and Textiles
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• v.33 no.5
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• pp.711-720
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• 2009

Leaf fibers have many good properties; they are strong, long, cheap, abundant and bio-degradable. Since they, however, contain a great quantity of non-cellulose components, they have been used for the materials of mats, ropes, bags and nets rather than those of clothing. In this study, we investigated the characteristics of leaf fibers in order to promote the use of leaf fibers for the materials of clothing as well as develop the high value-added textile fibers. Leaf fiber plants including New Zealand Flax, Henequen and Banana plant, which have various nature and shape, were used. New Zealand Flax and Henequen leaves were cut from lower part of plants. Banana leaves and pseudo-stems were peeled and cut from the stem of Banana plants. First, the thin outer skins like film of leaves, veins and stems were removed before retting. The chemical retting had been processed for 1hour, at 100 in 0.4% $H_2SO_4$ aqueous solution(liquid ratio 50:1). Then, the retted leaf fibers had been soaked for 1hour, at room temperature in 0.5% NaClO solution(v/v) to remove the miscellaneous materials. We investigated the physical characteristics of three leaf fibers including the transversal and longitudinal morphology, the contents(%) of pectin, lignin and hemicellulose, the length and diameter of fibers, the tensile strength of the fiber bundles, and the fiber crystallinity and the moisture regain(%). The lengths of fiber from three leaf fibers were similar to their leaf lengths. The fiber bundles were composed of the cellulose paralleled to the fiber axis and the non-cellulose intersecting at right angle with the fiber axis. The diameters of New Zealand Flax, Henequen and Banana fibers were $25.13{\mu}m$, $18.16{\mu}m$ and $14.01{\mu}m$, respectively and their tensile strengths were 19.40 Mpa, 32.16 Mpa and 8.45 Mpa, respective. The non-cellulose contents of three leaf fibers were relatively as high as 40%. If the non-cellulose contents of leaf fibers might be controlled, leaf fibers could be used for the materials of textile fiber, non-wovens and Korean traditional paper, Hanjee.

• Applied Biological Chemistry
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• v.38 no.6
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• pp.554-562
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• 1995

Effect of the modification of rice protein by protease and 2-mercaptoethanol on physicochemical and gelatinization properties was investigated for the three cultuvars of rice. Total amylose contents of Chucheongbyeo(japonica type), Chosengtongilbyeo(tongil type, indica x japonica) and IR 36 (indica type) were in the range of $20{\sim}25%$. Total amylose and insoluble amylose content of IR 36 were higher than the others. The differential scanning calorimetric and X-ray diffraction results revealed higher relative crystallinity of IR 36 than the others. Water uptake was increased and amylographic viscosity was significantly decreased by 2-mercaptoethanol treatment. Amylographic viscosity was significantly decreased and hot water-soluble carbohydrate content was increased by protease treatment. The proportions of high molecular weight of soluble carbohydrate fractionated by gel filtration chromatography were increased by protease treatment. These effects were most significant in IR 36. This results suggested that starch gelatinization be accelerated by alteration of the protein with protease and reducing agent.

• Applied Biological Chemistry
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• v.26 no.2
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• pp.137-142
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• 1983

Starch granules of sweet potatoes, the Suwon 147 and the Chunmi were observed by photomicroscope and scanning electron microscope were round and polygonal. Granule sizes of the Suwon 147 and the Chunmi were $14{\sim}30{\mu}m,\;16{\sim}34{\mu}m$, respectively. X-ray diffraction pattern of starch granules resulted weak crystallinity at $2{\theta}$ 14.8, 17.2, 22.5. Starch granules were of the Ca crystalline type. The blue values of the Suwon 147 and the Chunmi were determined to be 0.342 and 0.279, amylose contents 27.6% and 23.6%, and water binding capacity 178.7% and 185.5%. Swelling of the starches negligible until $50^{\circ}C$ thereafter it increased rapidly. Swelling power of the Suwon 147 was more slightly than that of the Chunmi. Optical transmittance of 0.2% starch suspensions was increased rapidly from $65^{\circ}C$ and the gelatinization at $65{\sim}80^{\circ}C$ was of sing1e stage. Amylogram patterns of 4% starch solutions were similar to no peak viscosity. Viscosity of the Suwon 147 was increased, but that of the Chunmi was decreased at $92.5^{\circ}C$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.5
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• pp.1213-1218
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• 2013

In this study, Ga-doped ZnO (GZO) thin films were fabricated on transparent sapphire substrate by RF magnetron sputtering method and then investigated the effect of various substrate temperature on the electrical, optical properties and characteristic of crystallization of the GZO thin films. The electrical property indicated that the lowest resistivity ($4.18{\times}10^{-4}{\Omega}cm$), the highest carrier concentration ($6.77{\times}10^{20}cm^{-3}$) and Hall mobility ($22cm^2/Vs$) were obtained in the GZO thin film fabricated at $300^{\circ}C$. And for this condition, the highest c-axis orientation and (002) diffraction peak which exhibits a FWHM of $0.34^{\circ}$ were obtained. From the results of AFM measurements, it is known that the highest crystallinity is observed at $300^{\circ}C$. The transmittance spectrum in the visible range was approximately 80 % regardless of substrate temperature. The optical band-gap showed the blue-shift as increasing the substrate temperature to $300^{\circ}C$, and they are all larger than the band gap of bulk ZnO (3.3 eV). It can be explained by the Burstein-Moss effect.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.08a
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• pp.84-91
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• 2002

The stochiometric composition of $AgGaS_2$/GaAs polycrystal source materials for the $AgGaS_2$/GaAs epilayer was prepared from horizontal furnace. From the extrapolation method of X-ray diffraction patterns it was found that the polycrystal $AgGaS_2$/GaAs has tetragonal structure of which lattice constant an and Co were 5.756 $\AA$ and 10.305 $\AA$, respectively. $AgGaS_2$/GaAs epilayer was deposited on throughly etched GaAs(100) substrate from mixed crystal $AgGaS_2$/GaAs by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $590^{\circ}C$ and $440^{\circ}C$ respectively. The crystallinity of the grown $AgGaS_2$/GaAs epilayer was investigated by the DCRC (double crystal X-ray diffraction rocking curve). The optical energy gaps were found to be 2.61 eV for $AgGaS_2$/GaAs epilayer at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation, then the constants in the Varshni equation are given by $\alpha=8.695{\times}10^{-4}$ eV/K, and $\beta=332K$. From the photocurrent spectra by illumination of polarized light of the $AgGaS_2$/GaAs epilayer, we have found that crystal field splitting ${\Delta}Cr$ was 0.28 eV at 20 K. From the PL spectra at 20 K, the peaks corresponding to free and bound excitons and a broad emission band due to D-A pairs are identified. The binding energy of the free excitons are determined to be 0.2676 eV and 0.2430 eV and the dissociation energy of the bound excitons to be 0.4695 eV.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.10
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• pp.839-843
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• 2011

ZnO nanostructures were developed on a Si (100) substrate from powder mixture of ZnO and 5 mol% Pd (ZP-5) as reactants by ${\times}$ sccm oxygen pressures(x= 0, 10, 20, 40). DTA (differential thermal analysis) result shows the Pd(5 mol%)+ZnO mixtured powder(PZ-5) is easily evaporated than pure ZnO powder. The PZ-5 mixtured powder was characterized by DTA to determine the thermal decomposition which was found to be at $800^{\circ}C$, $1,100^{\circ}C$. Weight loss(%) and ICP (inductively coupled plasma) analysis reveal that Zn vaporization is decreased by increased oxygen pressures from the PZ-5 at $1,100^{\circ}C$ for 30 mins. Needle-like ZnO nanostructures array developed from 10 sccm oxygen pressure, was well aligned vertically on the Si substrate at $1,100^{\circ}C$ for 30 mins. The lengths of the Needle-like ZnO nanostructures is about 2 ${\mu}m$ with diameters of about 65 nm. The developed ZnO nanostructures exhibited growth direction along [001] with defect-free high crystallinity. It is considered that Zn vaporization is responsible for the growth of Needle-like ZnO nanostructures by controlling the oxygen pressures. The photoluminescence spectra of ZnO nanostructures exhibited stronger 376.7 nm NBE (near band-edge emission) peak and 529.3 nm DLE (deep level energy) peak.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.12
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• pp.825-830
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• 2014

$[(Co_{1-x}Cu_x)_{0.2}(Ni_{0.3}Mn_{0.7})_{0.8}]_3O_4$ ($0{\leq}x{\leq}1$) thin films prepared by metal organic decomposition process were fabricated on SiN/Si substrate for infrared sensor application. Their structural and electrical properties were investigated with variation of Cu dopant. The $[(Co_{1-x}Cu_x)_{0.2}(Ni_{0.3}Mn_{0.7})_{0.8}]_3O_4$ (CCNMO) film annealed at $500^{\circ}C$ exhibited a dense microstructure and a homogeneous crystal structure with a cubic spinel phase. Their crystallinity was further enhanced with increasing doped Cu amount. The 120 nm-thick CCNMO (x=0.6) thin film had a low resistivity of $53{\Omega}{\cdot}cm$ at room temperature while the Co-free film (x=1) showed a significantly decreased resistivity of $5.9{\Omega}{\cdot}cm$. Furthermore, the negative temperature coefficient of resistance (NTCR) characteristics were lower than $-2%/^{\circ}C$ for all the specimens with $x{\geq}0.6$. These results imply that the CCNMO ($x{\geq}0.6$) thin films are a good candidate material for infrared sensor application.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.186-186
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• 2000

After LeComber et al. reported the first amorphous hydrogenated silicon (a-Si: H) TFT, many laboratories started the development of an active matrix LCDs using a-Si:H TFTs formed on glass substrate. With increasing the display area and pixel density of TFT-LCD, however, high mobility TFTs are required for pixel driver of TF-LCD in order to shorten the charging time of the pixel electrodes. The most important of these drawbacks is a-Si's electron mobiliy, which is the speed at which electrons can move through each transistor. The problem of low carier mobility for the a-Si:H TFTs can be overcome by introducing polycrystalline silicon (poly-Si) thin film instead of a-Si:H as a semiconductor layer of TFTs. Therefore, poly-Si has gained increasing interest and has been investigated by many researchers. Recnetly, fabrication of such poly-Si TFT-LCD panels with VGA pixel size and monolithic drivers has been reported, . Especially, fabricating poly-Si TFTs at a temperature mach lower than the strain point of glass is needed in order to have high mobility TFTs on large-size glass substrate, and the monolithic drivers will reduce the cost of TFT-LCDs. The conventional methods to fabricate poly-Si films are low pressure chemical vapor deposition (LPCVD0 as well as solid phase crystallization (SPC), pulsed rapid thermal annealing(PRTA), and eximer laser annealing (ELA). However, these methods have some disadvantages such as high deposition temperature over $600^{\circ}C$, small grain size (<50nm), poor crystallinity, and high grain boundary states. Therefore the low temperature and large area processes using a cheap glass substrate are impossible because of high temperature process. In this study, therefore, we have deposited poly-Si thin films on si(100) and glass substrates at growth temperature of below 40$0^{\circ}C$ using newly developed high rate magnetron sputtering method. To improve the sputtering yield and the growth rate, a high power (10~30 W/cm2) sputtering source with unbalanced magnetron and Si ion extraction grid was designed and constructed based on the results of computer simulation. The maximum deposition rate could be reached to be 0.35$\mu$m/min due to a high ion bombardment. This is 5 times higher than that of conventional sputtering method, and the sputtering yield was also increased up to 80%. The best film was obtained on Si(100) using Si ion extraction grid under 9.0$\times$10-3Torr of working pressure and 11 W/cm2 of the target power density. The electron mobility of the poly-si film grown on Si(100) at 40$0^{\circ}C$ with ion extraction grid shows 96 cm2/V sec. During sputtering, moreover, the characteristics of si source were also analyzed with in situ Langmuir probe method and optical emission spectroscopy.

• Journal of the Korean Vacuum Society
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• v.14 no.4
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• pp.215-221
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• 2005

Thermoelectric bismuth telluride thin films were prepared on $SiO_{2}$/Si substrate with co-sputtering of bismuth and tellurium targets. The effects of deposition temperature on surface morphology, crystallinity and electrical transport properties were investigated. Hexagonal crystallites were clearly visible at the surface of films deposited above $290 ^{\circ}C$. Change of dominant phase from rhombohedral $Bi_2Te_3$ to hexagonal BiTe was confirmed with X-ray diffraction analysis. The deviation from stoichiometric composition at high deposition temperature resulted in the change of structural and electrical characteristics. Seebeck coefficients of all samples have negative value, indicating the prepared $Bi_XTe_Y$ films are n-type thermoelectric. Optimum of Seebeck coefficient and power factor were obtained at the deposition temperature of $225 \^{circ}$C (about -55 $\mu$V/K and $3\times10^{-4}$ W/$k^{2}$m, respectively). Deterioration of thermoelectric properties at higher temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.130.2-130.2
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• 2013

Today, chemical vapor deposition (CVD) of hydrocarbon gases has been demonstrated as an attractive method to synthesize large-area graphene layers. However, special care should be taken to precisely control the resulting graphene layers in CVD due to its sensitivity to various process parameters. Therefore, a facile synthesis to grow graphene layers with high controllability will have great advantages for scalable practical applications. In order to simplify and create efficiency in graphene synthesis, the graphene growth by thermal annealing process has been discussed by several groups. However, the study on growth mechanism and the detailed structural and optoelectronic properties in the resulting graphene films have not been reported yet, which will be of particular interest to explore for the practical application of graphene. In this study, we report the growth of few-layer, large-area graphene films using rapid thermal annealing (RTA) without the use of intentional carbon-containing precursor. The instability of nickel films in air facilitates the spontaneous formation of ultrathin (<2~3 nm) carbon- and oxygen-containing compounds on a nickel surface and high-temperature annealing of the nickel samples results in the formation of few-layer graphene films with high crystallinity. From annealing temperature and ambient studies during RTA, it was found that the evaporation of oxygen atoms from the surface is the dominant factor affecting the formation of graphene films. The thickness of the graphene layers is strongly dependent on the RTA temperature and time and the resulting films have a limited thickness less than 2 nm even for an extended RTA time. The transferred films have a low sheet resistance of ~380 ${\Omega}/sq$, with ~93% optical transparency. This simple and potentially inexpensive method of synthesizing novel 2-dimensional carbon films offers a wide choice of graphene films for various potential applications.