• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.91.2-91.2
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• 2010

The use of plated front contact for metallization of silicon solar cell may alternative technologies as a screen printed and silver paste contact. This technologies should allow the formation of contact with low contact resistivity a high line conductivity and also reduction of shading losses. The better performance of Ni/Cu contacts is attributed to the reduced series resistance due to better contact conductivity of Ni with Si and subsequent electroplating of Cu on Ni. The ability to pattern narrower grid lines for reduced light shading combined with the lower resistance of a metal silicide contact and improved conductivity of plated deposit. This improves the FF as the series resistance is deduced. This is very much required in the case of low concentrator solar cells in which the series resistance is one of the important and dominant parameter that affect the cell performance. A selective emitter structure with highly dopes regions underneath the metal contacts, is widely known to be one of the most promising high-efficiency solution in solar cell processing. This paper using selective emitter structure technique, fabricated Ni/Cu plating metallization cell with a cell efficiency of 17.19%.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.454-455
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• 2009

Selective emitter structure have an important research subject for crystalline silicon solar cells because it is used in production for high efficiency solar cells. A selective emitter structure with highly doped regions underneath the metal contacts is widely known to be one of the most promising high-efficiency solution in solar cell processing. Since most of the selective emitter processes require expensive extra masking and double steps process. Formation of selective emitters is not cost effective. One method that satisfies these requirements is the method of screen-printing with a phosphorus doping paste. In this paper we researched two groups of selective emitter structure process. One was using dopant paste, and the other was using solid source, in order to compare their uniformity, sheet resistance and performance condition time.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.334-345
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• 2008

컴퓨터의 발달과 더불어 현대사회는 기록하고 보존해야할 정보의 양이 점점 방대해 지고 있다. 그로 인해 자기기록매체처럼 정보를 사용자의 편의에 따라 반복적으로 기록하고 재생할 수 있는 광기록매체에 대한 관심이 증가되고 있다. $Ge_2Sb_2Te_5$(GST)는 기존의 CD-RW나 Floppy Disk(FD)를 대체할 차세대 기록매체로 주목받고 있다. 따라서 본 연구에서는 비정질상과 결정상으로 변하는 성질을 가지고 있는 GST롤 상변화 기록매체로서 이용하기 위해 굴절률을 평가하였다. 시료는 5N의 순도를 갖는 Ge, Sb, Te 물질을 준비하고 조성비에 맞추어서 석영관에 진공 봉입한 후 용융-냉각법으로 벌크를 제작하였고 열증착 방법으로 Si 및 유리 기판위에 1000nm 두께로 박막을 제작하였다. UV-Vis-IR spectrophotometer를 사용하여 반사도와 투과도를 측정하였고 측정한 스펙트럼을 이용하여 Swanepoel method로 굴절률을 계산하였다. 본 연구진이 자체 개발한 계산툴에 실험값을 대입하였고 실험에 의해 얻은 투과도와 계산툴에 의해 얻은 투과도 스펙트럼을 비교하였다.

• Preventive Nutrition and Food Science
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• 제11권2호
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• pp.146-154
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• 2006

Structural modification of corn starch by gamma irradiation was evaluated for under dry conditions at varied intensities from 0 to 40 kGy. Under scanning electron microscopy, the granule shape of corn starch was not significantly affected by the irradiation up to 40 kGy. In addition, X-ray diffraction and melting patterns of the irradiated starches were similar to those of the native starch, indicating that crystalline regions in the starch granules were not changed by irradiation. However, the pattern of gel permeation column chromatography showed a significant increase in partial hydrolysis of gamma irradiated starch samples. The degree of polymerization and the paste viscosity of irradiated starch samples dose-dependently decreased significantly with irradiation, and increased solubility and clarity were observed in the irradiated starch solution. In addition, the degree of retrogradation decreased as irradiation dose increased. Irradiation of corn starch has advantages over the ordinary acid or the enzyme hydrolysis modification methods. It does not affect the granular shape and crystalline phase of starch during hydrolysis, and the process can be carried out in dry state.

• Metals and materials international
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• 제24권6호
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• pp.1285-1292
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• 2018

Microstructural properties of as-grown and annealed CoCrFeMnNi high entropy alloy (HEA) oxynitride thin films were investigated. The CoCrFeMnNi HEA oxynitride thin film was grown by magnetron sputtering method using an air gas, and annealed under the argon plus air flow for 5 h at $800^{\circ}C$. The as-grown film was homogeneous and uniform composed of nanometer-sized crystalline regions mixed with amorphous-like phase. The crystalline phase in the as-grown film was face centered cubic structure with the lattice constant of 0.4242 nm. Significant microstructural changes were observed after the annealing process. First, it was fully recrystallized and grain growth happened. Second, Ni-rich region was observed in nanometer-scale range. Third, phase change happened and it was determined to be $Fe_3O_4$ spinel structure with the lattice constant of 0.8326 nm. Hardness and Young's modulus of the as-grown film were 4.1 and 150.5 GPa, while those were 9.4 and 156.4 GPa for the annealed film, respectively.

• Current Photovoltaic Research
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• 제2권3호
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• pp.135-139
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• 2014

Different power output of solar cells can be observed at high-temperature regions such as desert areas. In this study, performance dependence on operating temperature of crystalline silicon solar cells with different emitter types was analyzed. Based on the light current-voltage (LIV) measurement, temperature coefficients of short-circuit current density ($J_{SC}$), open-circuit voltage ($V_{OC}$), fill factor (FF) and power conversion efficiency were measured and compared for two groups of crystalline silicon solar cells with different emitter types. One group had homogeneously doped (conventional) emitter and another selectively doped (selective) emitter. Varying the operating temperature from 25 to 40, 60, and $80^{\circ}C$, LIV characteristics of the cells were measured and the properties of saturation current densities ($J_0$) were extracted from dark current-voltage (DIV) curve. From the DIV data, effect of temperature on the performance of the solar cells with different electrical structures for the emitter was analyzed. Increasing the temperature, both emitter structures showed a slight increase in $J_{SC}$ and a rapid degradation of $V_{OC}$. FF and power conversion efficiency also decreased with the increasing temperature. The degrees of $J_{SC}$ increase and $V_{OC}$ degradation for two groups were compared and explained. Also, FF change was explained by series and shunt resistances from the LIV data. It was concluded that the degradation of solar cells shows different values at different temperatures depending on the emitter type of solar cells.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1990년도 추계학술대회 논문집
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• pp.98-101
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• 1990

In order to investigate the laser effects resulted from the behaviors of carriers for BOPP film, experiment of TSC were carried out on the specimen with 15[$\mu\textrm{m}$] thick irradiated by He-Ne laser. The TSC spectras were observed in the temperature range of -100[$^{\circ}C$] to 130[$^{\circ}C$] with the electric field of 20∼60[MV/m], had show four of the distinguished peak such as ${\alpha}$$_1$, ${\alpha}$$_2$, ${\beta}$ and ${\gamma}$, which appeared at 115, 80, 17 and -30[$^{\circ}C$] respectively. Specially, ${\alpha}$$_1$ was observed and anomalous TSC flowing in the same direction as the charging current on the high-electric field such as 50∼60[MV/m]. In according on the consequences obtained from the studies, the origin of ${\alpha}$$_1$peak was attributed to the detrapping process form trap with 2.88[eV] deep of injected space charge from the chathode in the crystaline regions. The origin of ${\alpha}$$_2$ peak was regarded as the detrapping process of ions trapped with 0.9[eV] deep originated from impurity-ion remained in the specimen during production process of the material, in the crystalline regions. The origin of ${\beta}$ peak was concluded to be due to the depolarization process of "C=0"dipole with the activation energy of 0.75[eV] in the amorphous regions. The origin of ${\gamma}$ peak was responsible to the process combined with the depolarization of "CH$_3$", chain segment, with the activation energy of carriers from the shallow trap with 0.4[eV], in he amorphous regions.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.72.1-72.1
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• 2010

Thin film a-Si solar cells deposited by PECVD have many advantages compared to the traditional crystalline Si solar cells. They do not require expensive Si wafer, the process temperature is relatively low, possibility of scaling up for mass production, etc. In order to produce thin film solar cells, understanding the relationship between the material characteristics and deposition conditions is important. It has been reported by many groups that the band gap of the a-Si material and the deposition rate has an linear relationship, when RF power is used to control both. However, when the process pressure is changed in order to control the deposition rate and the band gap, a diversion from the well known linear relationship occurs. Here, we explain this diversion by the deposition condition crossing different plasma regions in the Paschen curve with a simple model. This model will become a guide to which condition a-Si thin films must be fabricated in order to get a high quality film.

• 한국펄프종이공학회:학술대회논문집
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• 한국펄프종이공학회 2006년도 PAN PACIFIC CONFERENCE vol.1
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• pp.43-49
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• 2006

The surface and pore structure of cellulose fibers have a significant impact on the properties and performance in applications. Cellulase enzymatic hydrolysis of cellulose fibers can result in changes to the surface and pore structure thus providing a useful tool for fiber modification. This research characterizes these changes using various test methods such as fiber dimension, water retention value, hard-to-remove water content, freezing and non-freezing bound water content, polymer adsorption, and crystallinity index. For a high-dosage enzyme treatment (0.10 g/g), the fiber length was significantly decreased and the fibers were 'cut' in the cross direction, not in the axial direction. The swelling capacities as measured by the WRV and HR water content increased for the high-dosage treatment. Three independent measurements (non-freezing bound water, polymer adsorption, and crystallinity index) are in good agreement with the statement that the amorphous regions of cellulose fibers are a more readily available substrate relative to crystalline regions. Based on the experimental results obtained herein, a model was proposed to explain surface and pore structure modification of cellulose fibers via enzymatic treatment.

• E2M - 전기 전자와 첨단 소재
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• 제1권1호
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• pp.54-61
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• 1988

This paper was a study on dielectric phenomena of the specimen, Polypropylene films which were annealled in air and quenched in liquid nitrogen after aging for 5[hr] in water of 100[.deg.C]. The specimen was measured in temperature range of 15-120[.deg.C] and in frequency range of 30-1x 10$^{6}$ [HZ]. As the results of the study, it was confirmed that the tacticity of specimen was isotactic structure, and the degree of cryatallinity of the specimens calculated by means of Natta's method from XRD (X-ray Diffraction) spectrum was 55[%]. And for dielectric relaxation, .betha. peak-the tan .delta. (spectrum around 20[.deg.C])-attributed due to amorphous regions, and .alpha. peak - the tan .delta. spectrum around 90[.deg.C]-due to crystalline regions. It was identified that the degree of crystallinity of the specimen quenched in the liquid nitrogen was increased to 55-65[%], and that of the specimen annealled in the air was decreased to 55-50[%]. And activation energy from dielectric loss spectra was obtained 34.5[kcal/mole] for .alpha. peak and 80.5[kcal/mole] for .betha. peak, respectively.