• 천문학회지
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• 제44권1호
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• pp.13-21
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• 2011

We model dust around Herbig Ae/Be stars using a radiative transfer model for multiple isothermal circumstellar dust shells to reproduce the multiple broad peaks in their spectral energy distributions (SEDs). Using the opacity functions for various types of dust grains at different temperatures, we calculate the radiative transfer model SEDs for multiple dust shells. For eight sample stars, we compare the model results with the observed SEDs including the Infrared Space Observatory (ISO) and AKARI data. We present model parameters for the best fit model SEDs that would be helpful to understand the overall structure of dust envelopes around Herbig Ae/Be stars. We find that at least four separate dust components are required to reproduce the observed SEDs. For all the sample stars, two innermost dust components (a hot component of 1000-1500 K and a warm component of 300-600 K) with amorphous silicate and carbon grains are needed. Crystalline dust grains (corundum, forsterite, olivine, and water ice) are needed for some objects. Some crystalline dust grains exist in cold regions as well as in hot inner shells.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 추계학술대회 논문집 학회본부
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• pp.420-422
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• 1995

PVDF (polyvinylidene fluoride) has at least from known crystalline structure ( ; they are referred to as the $\alpha$, $\beta$, $\gamma$ and $\alpha_p$ phase or forms II, I, III and $IV_p$). In this study, the manufactured PVDF thin films through vapor deposition method had for II ( ; the substrate temperature at 30$^{\circ}C$). The dielectric behavior of poly(vinylidene fluoride) is affected by orientation and crystal modification. The very high value of the dielectric constant for high temperature conditioned film is believed to be due to the orientation effect. The loss peak caused by molecular motion of the molecules in crystalline regions.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 추계학술대회 논문집
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• pp.355-358
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• 2009

This paper presents the technology of selective emitter for high efficiency crystalline silicon solar cell. The effect of selective emitter is analyzed by using the simulation program for solar cell, PC1D. The selective emitter shows better spectral response in short wavelength regions compared to homogeneous emitter. Therefore, the efficiency of solar cell with selective emitter can be improved by changing the sheet resistance from 60 $\Omega/\square$ to 120 $\Omega/\square$. In addition, the power loss of solar cell can be minimized by optimizing width and gap of the finger electrodes on the selective emitter.

• 한국자기공명학회논문지
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• 제17권2호
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• pp.92-97
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• 2013

We study the electron spin resonance line-width (ESRLW) of $Fe^{3+}$ in crystalline $LiNbO_3$ ; the ESRLW is obtained using the projection operator method (POM) developed by Argyres and Sigel. The ESRLW is calculated to be axially symmetric about the c-axis and is analyzed by the spin Hamiltonian with an isotopic g factor at a frequency of 9.5 GHz. The ESRLW increases exponentially as the temperature increases, and the ESRLW is almost constant in the high-temperature region (T>8000 K). This kind of temperature dependence of the ESRLW indicates a motional narrowing of the spectrum when $Fe^{3+}$ ions substitute the $Nb^{5+}$ ions in an off-center position. It is clear from this feature that there are two different regions in the graph of the temperature dependence of the ESRLW.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.254-255
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• 2012

Interest in nano-crystalline silicon (nc-Si) thin films has been growing because of their favorable processing conditions for certain electronic devices. In particular, there has been an increase in the use of nc-Si thin films in photovoltaics for large solar cell panels and in thin film transistors for large flat panel displays. One of the most important material properties for these device applications is the macroscopic charge-carrier mobility. Hydrogenated amorphous silicon (a-Si:H) or nc-Si is a basic material in thin film transistors (TFTs). However, a-Si:H based devices have low carrier mobility and bias instability due to their metastable properties. The large number of trap sites and incomplete hydrogen passivation of a-Si:H film produce limited carrier transport. The basic electrical properties, including the carrier mobility and stability, of nc-Si TFTs might be superior to those of a-Si:H thin film. However, typical nc-Si thin films tend to have mobilities similar to a-Si films, although changes in the processing conditions can enhance the mobility. In polycrystalline silicon (poly-Si) thin films, the performance of the devices is strongly influenced by the boundaries between neighboring crystalline grains. These grain boundaries limit the conductance of macroscopic regions comprised of multiple grains. In much of the work on poly-Si thin films, it was shown that the performance of TFTs was largely determined by the number and location of the grain boundaries within the channel. Hence, efforts were made to reduce the total number of grain boundaries by increasing the average grain size. However, even a small number of grain boundaries can significantly reduce the macroscopic charge carrier mobility. The nano-crystalline or polymorphous-Si development for TFT and solar cells have been employed to compensate for disadvantage inherent to a-Si and micro-crystalline silicon (${\mu}$-Si). Recently, a novel process for deposition of nano-crystralline silicon (nc-Si) thin films at room temperature was developed using neutral beam assisted chemical vapor deposition (NBaCVD) with a neutral particle beam (NPB) source, which controls the energy of incident neutral particles in the range of 1~300 eV in order to enhance the atomic activation and crystalline of thin films at room temperature. In previous our experiments, we verified favorable properties of nc-Si thin films for certain electronic devices. During the formation of the nc-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. The more resent work on nc-Si thin film transistors (TFT) was done. We identified the performance of nc-Si TFT active channeal layers. The dependence of the performance of nc-Si TFT on the primary process parameters is explored. Raman, FT-IR and transmission electron microscope (TEM) were used to study the microstructures and the crystalline volume fraction of nc-Si films. The electric properties were investigated on Cr/SiO2/nc-Si metal-oxide-semiconductor (MOS) capacitors.

• 한국응용곤충학회지
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• 제34권3호
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• pp.266-277
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• 1995

벼멸구는 촉각 기부의 등쪽으로 알모양의 24ㅐ의 겹눈을 가지고 있다. 벼멸구의 겹눈은 각각의 단안이 분리되어 있고, 각각의 낱눈이 단지 그들의 각막렌즈를 통해서만이 빛을 받는 연립상 겹눈이다. 각각의 낱눈은 큐티클성 각막렌즈와 그 안쪽에 수정체가 자리잡고 있다. 망막세포는 수정체 바로 아래쪽에 자리하며, 이들은 중심축쪽으로 감간소체들이 밀집결합되어 감간체를 형성한다. 감간체는 수정체 말단부분에서 시작되어 기저막에 까지 다달으며, 그 길이는 약 110~120${\mu}m$ 정도이다. 수정체는 4개로 구성된 한쌍의 1차색소세포에 의하여 둘러 쌓여 있으며 이것은 또한 부속색소세포에 의하여 둘러 쌓여 있다. 수정체의 기저부위는 망막세포에 의하여 일부가 둘러 쌓여 있고 망막세포의 내벽에서 발생한 감간소체들로 구성된 감간체와 닿아있다. 낱눈의 상층부분은 7개의 망막세포로 구성되어 있으나 3/4부분에서 8번째의 망막세포가 자리잡고 있다. 중앙부위에 위치하고 있는 감간체는 미세용 모들로 구성된 감간소체들로 구성되어 있는데, 이들 미세융모의 단면도는 6각형의 모양을 가지고 있다. 색소세포는 수정체를 감싸고 있는 1차색소세포, 기저막까지 닿아 있는 부속색소세포, 기저막 부위의 기저막색소세포 등 3가지의 색소세포들이 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.894-896
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• 2001

The Polypropylene films which are made by refinement of its pellet and formed as crystals are exposed to Radiation. As the results, degradation effects were observed in non-crystalline regions. It is thus considered that the effects occur by destroying of lattice binding force by Radiation. The distribution of degradation was increased with irradiation quantities of Radiation and dielectric constant of Polypropylene sheets irradiated Radiation was rapidly increased from above 10 MHz.

• 한국염색가공학회지
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• 제1권1호
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• pp.26-34
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• 1989

The selective chemical degradation or etching of PET based on an organic amine attack on the ester group. The techniques involves the chemical removal of loss ordered amorphous regions or crystalline regions, which are essentially unaffected by the degradative etchant. Thus, most of previous studies have limited to consideration which has been given to structural changes taking place. Therefore, this study was carried out to investigate surface characterization, dyeing properties of PET film hydrazinolyzed with hydrazine hydrate in methanol. PET film was treated with 30% hydrazine hydrate in methanol at $30^\circ{C}$ for various time intervals. The total surface tension of treated PET increased, the dispersion force decreased and the hydrogen bonding force increased. The equilibrium dye adsorption, dyeing rate and apparent diffusion coefficient of acid dyes increased, and the apparent activation energies of diffusion decreased.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 정기총회 및 창립40주년기념 학술대회 학회본부
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• pp.489-491
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• 1987

It has been shown that the thermally stimulated current technique can be one of the most powerful methods for evaluating the electrical properties. An unstretched $\alpha$-form specimen of corona-charged, 50[${\mu}m$],t Polyvinylidene Fluoride shows four TSC peaks designated $\delta}$, $\gamma$, $\beta$ and $\alpha$ in assending order of temperature in temperature range $-100{\sim}200^{\circ}C$. The $\delta$, $\gamma$ peaks may be attributed to the dipolar depolarization in the amorphous regions and $\beta$, $\alpha$ peaks are associated with the detrap from trapped carriers in the crystalline regions.

• 한국식품영양과학회지
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• 제34권1호
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• pp.87-92
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• 2005

찰흑미(상해항혈나) 전분의 호화 특성을 알아보고자 신선찰벼 전분을 대조구로 SEM, X-ray 회절도, 시차주사열량계와 신속점도계를 이용하여 호화특성을 비교하였다. 주사전자현미경에 의한 입자형태의 변화에서는 6$0^{\circ}C$에서 찰흑미 전분에 비해 신선찰벼 전분의 입자 붕괴가 더 심하였으며, 시 차주사열량계에 의한 관찰에서는 신선찰벼와 찰흑미 전분의 호화개시온도는 62.$0^{\circ}C$와 63.$0^{\circ}C$, 피크온도는 69.$0^{\circ}C$, 69.4$^{\circ}C$, 호화절정온도는 78.7$^{\circ}C$, 78.9$^{\circ}C$, 호화엔탈피는 각각 8.55 J/g, 8.87 J/g로 서로 차이를 보이지 않았다. 생 전분의 X-선 회절양상은 두 시료 모두 전형적인 A형을 보였고, 가열온도에 따른 양상에 있어서 6$0^{\circ}C$ 및 $65^{\circ}C$에서 신선찰벼 전분에 비해 찰흑미 전분의 결정형이 상대적으로 많음을 알 수 있었으나 $65^{\circ}C$를 경계로 결정형 영역은 완전히 사라졌다. 신속점도계를 이용한 호화특성에서는 최고점도, breakdown, 최종점도, setback은 시료간에 큰 차이를 보이지 않았다.