• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.5
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• pp.173-181
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• 2015

A stoichiometric mixture of evaporating materials for $BaIn_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaIn_2S_4$ single crystal thin films measured from Hall effect by van der Pauw method are $6.13{\times}10^{17}cm^{-3}$ and $222cm^2/v{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.0581eV-(3.9511{\times}10^{-3}eV/K)T^2/(T+536K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaIn_2S_4$ have been estimated to be 182.7 meV and 42.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaIn_2S_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n = 1 and $C_{24}$-exciton peaks for n = 24.

• The Journal of the Petrological Society of Korea
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• v.20 no.1
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• pp.23-37
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• 2011

The scaling properties on the length distribution of microcrack populations from Tertiary crystalline tuff are investigated. From the distribution charts showing length range with 15 directional angles and five groups(I~V), a systematic variation appears in the mean length with microcrack orientation. The distribution charts are distinguished by the bilaterally symmetrical pattern to nearly N-S direction. The whole domain of the length-cumulative frequency diagram for microcrack populations can be divided into three sections in terms of phases of the distribution of related curves. Especially, the linear middle section of each diagram of five groups represents a power-law distribution. The frequency ratio of linear middle sections of five groups ranges from 46.6% to 67.8%. Meanwhile, the slope of linear middle section of each group shows the order: group V($N60{\sim}90^{\circ}E$, -2.02) > group IV($N20{\sim}60^{\circ}E$, -1.55) > group I($N60{\sim}90^{\circ}W$, -1.48), group II($N10{\sim}60^{\circ}W$, -1.48) > group III($N10^{\circ}W{\sim}N20^{\circ}E$, -1.06). Five sub-populations(five groups) that closely follow the power-law length distribution show a wide range in exponents( -1.06 - -2.02). These differences in exponent among live groups emphasizes the importance of orientation effect. In addition, breaks in slope in the lower parts of the related curves represent the abrupt development of longer lengths, which is reflected in the decrease in the power-law exponent. Especially, such a distribution pattern can be seen from the diagram with $N10{\sim}20^{\circ}E,\;N10{\sim}20^{\circ}W$ and $N60{\sim}70^{\circ}W$ directional angles. These three directional angles correspond with main directions of faults developed around the study area. The distribution chart showing the individual characteristics of the length-cumulative frequency diagrams for 15 directional angles were made. By arraying above diagrams according to the categories of three groups(A, B and C), the differences in length-frequency distributions among these groups can be easily derived. The distribution chart illustrates the importance of analysing microcrack sets separately. From the related chart, the occurrence frequency of shorter microcracks shows the order: group A > group B > group C. These three types of distribution patterns could reveal important information on the processes occurred during microcrack growth.

• Journal of the Korean Magnetics Society
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• v.12 no.1
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• pp.14-19
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• 2002

The iron-doped perovskite La$_{0.67}$Sr$_{0.33}$Mn$_{0.99}$$^{57}$Fe$_{0.01}$O$_3$compound has been studied by x-ray diffraction, Mossbauer spectroscopy, and vibrating sample magnetometry. The single phase of the polycrystalline La$_{0.67}$Sr$_{0.33}$Mn$_{0.99}$$^{57}$Fe$_{0.01}$O$_3$powder has been prepared by a waterbased solgel method. Crystalline La$_{0.67}$Sr$_{0.33}$Mn$_{0.99}$$^{57}$Fe$_{0.01}$O$_3$was a rombohedral structure with lattice parameters a$_{0}$=5.480 $AA$, $alpha$=60.259$^{circ}$. Mossbauer spectra of La$_{0.67}$Sr$_{0.3}$/Mn$_{0.99}$$^{57}$Fe$_{0.01}$O$_3$have been taken at various temperatures ranging from 20 to 400 K. As the temperature increases toward the Curie temperature, T$_{c}$=375 K, the Mossbauer spectra show line broadening and the difference between the 1,6 and 3,4 linewidths is caused by the anisotropic hyperfine field fluctuation. The anisotropic field fluctuation of +H (P$_{+}$=0.80) is greater than -H (P$_{-}$=0.20). We calculated that the anisotropy energy was 124.01 erg/cm$^3$for T=150 K which is associated with the large line broadening.

• Economic and Environmental Geology
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• v.19 no.spc
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• pp.207-226
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• 1986

The skarn type tungsten deposits in Jechon area are developed in the contact aureole of Jurassic granodiorite and lower Paleozoic limestone beds. The Tong Myeong mine contains scheelitebearing skarns found at and near the contacts between crystalline limestone and hornfels. Although the skarns are heterogeneous, there are clear patterns in the preferred associations and nonassociations of minerals on all scales. The skarn show a zonal arrangement from limestone to hydrothermal vein as follow: wollastonite skarn, clinopyroxene skarn, clinopyroxene-garnet skarn, garnet skarn, and vesuvianite skarn. Scheelite, abundant in all skarn units except wollastonite skarn and also in quartz veins near orebodies, is everywhere strongly correlated with pyrrhotite. It is implied that it was a stable phase throughout the evolution of the zoned skarns, at least in pyrrhotite.forming environments. Deposition of scheelite was probably widely caused by increasing $a_{Ca^{2+}}$ in the fluid, resulting from associated and interrelated reactions: $FeCl_2\;aq+H_2S\;aq{\rightarrow}FeS+2H^{+}+2Cl^-$; and $CaCO_3+2H^+{\rightarrow}Ca^{+2}+H_2CO_3$. The spectral reflection powers of nine sulfide species were studied, for three mineralization stage. The shapes and characteristics of the spectral reflectivity profiles are significant in their control of other optical properties. The characteristics of the Vickers microhardness and the optical symmetry for the minerals studied are discussed. Broad radicle groupings of the sulfides can be made with regard to the reflectivity-microhardness values.

• Korean Journal of Materials Research
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• v.22 no.2
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• pp.61-65
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• 2012

A $Li_2O-2SiO_2$ ($LS_2$) glass was investigated as a lithium-ion conducting oxide glass, which is applicable to a fast ionic conductor even at low temperature due to its high mechanical strength and chemical stability. The $Li_2O-2SiO_2$ glass is likely to be broken into small pieces when quenched; thus, it is difficult to fabricate a specifically sized sample. The production of properly sized glass samples is necessary for device applications. In this study, we applied spark plasma sintering (SPS) to fabricate $LS_2$ glass samples which have a particular size as well as high transparency. The sintered samples, $15mm\phi{\times}2mmT$ in size, ($LS_2$-s) were produced by SPS between $480^{\circ}C$ and $500^{\circ}C$ at 45MPa for 3~5mim, after which the thermal and dielectric properties of the $LS_2$-s samples were compared with those of quenched glass ($LS_2$-q) samples. Thermal behavior, crystalline structure, and electrical conductivity of both samples were analyzed by differential scanning calorimetry (DSC), X-ray diffraction (XRD) and an impedance/gain-phase analyzer, respectively. The results showed that the $LS_2$-s had an amorphous structure, like the $LS_2$-q sample, and that both samples took on the lithium disilicate structure after the heat treatment at $800^{\circ}C$. We observed similar dielectric peaks in both of the samples between room temperature and $700^{\circ}C$. The DC activation energies of the $LS_2$-q and $LS_2$-s samples were $0.48{\pm}0.05eV$ and $0.66{\pm}0.04eV$, while the AC activation energies were $0.48{\pm}0.05eV$ and $0.68{\pm}0.04eV$, respectively.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.59.1-59.1
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• 2010

Aluminum-induced crystallization (AIC) of amorphous silicon (a-Si) is studied with the structure of a glass/Al/$SiO_2$/a-Si, in which the $SiO_2$ layer has micron-sized laser holes in the stack. An oxide layer between aluminum and a-Si thin films plays a significant role in the metal-induced crystallization (MIC) process determining the properties such as grain size and preferential orientation. In our case, the crystallization of a-Si is carried out only through the key hole because the $SiO_2$ layer is substantially thick enough to prevent a-Si from contacting aluminum. The crystal growth is successfully realized toward the only vertical direction, resulting a crystalline silicon grain with a size of $3{\sim}4{\mu}m$ under the hole. Lateral growth seems to be not occurred. For the AIC experiment, the glass/Al/$SiO_2$/a-Si stacks were prepared where an Al layer was deposited on glass substrate by DC sputter, $SiO_2$ and a-Si films by PECVD method, respectively. Prior to the a-Si deposition, a $30{\times}30$ micron-sized hole array with a diameter of $1{\sim}2{\mu}m$ was fabricated utilizing the femtosecond laser pulses to induce the AIC process through the key holes and the prepared workpieces were annealed in a thermal chamber for 2 hours. After heat treatment, the surface morphology, grain size, and crystal orientation of the polycrystalline silicon (pc-Si) film were evaluated by scanning electron microscope, transmission electron microscope, and energy dispersive spectrometer. In conclusion, we observed that the vertical crystal growth was occurred in the case of the crystallization of a-Si with aluminum by the MIC process in a small area. The pc-Si grain grew under the key hole up to a size of $3{\sim}4{\mu}m$ with the workpiece.

• Bulletin of the Korean Chemical Society
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• v.33 no.9
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• pp.3061-3070
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• 2012

Novel 2-hexylthieno[3,2-b]thiophene-containing conjugated molecules have been synthesized via a reduction reaction using tin chloride in an acidic medium. They exhibited good solubility in common organic solvents and good self-film and crystal-forming properties. The single-crystalline objects were fabricated by a solvent slow diffusion process and then were employed for fabricating field-effect transistors (FETs) along with thinfilm transistors (TFTs). TFTs made of 5 and 6 exhibited carrier mobility as high as 0.10-0.15 $cm^2V^{-1}s^{-1}$. The single-crystal-based FET made of 6 showed 0.70 $cm^2V^{-1}s^{-1}$ which was relatively higher than that of the 5-based FET (${\mu}=0.23cm^2V^{-1}s^{-1}$). In addition, we fabricated organic photovoltaic (OPV) cells with new 2-hexylthieno [3,2-b]thiophene-containing conjugated molecules and methanofullerene [6,6]-phenyl C61-butyric acid methyl ester ($PC_{61}BM$) without thermal annealing. The ternary system for a bulk heterojunction (BHJ) OPV cell was elaborated using $PC_{61}BM$ and two p-type conjugated molecules such as 5 and 7 for modulating the molecular energy levels. As a result, the OPV cell containing 5, 7, and $PC_{61}BM$ had improved results with an open-circuit voltage of 0.90 V, a short-circuit current density of 2.83 $mA/cm^2$, and a fill factor of 0.31, offering an overall power conversion efficiency (PCE) of 0.78%, which was larger than those of the devices made of only molecule 5 (${\eta}$~0.67%) or 7 (${\eta}$~0.46%) with $PC_{61}BM$ under identical weight compositions.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.4
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• pp.31-37
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• 2017

Recently, there has been substantial interest in flexible and wearable devices whose properties and performances are close to conventional devices on hard substrates. Despite the advancement on flexible devices with organic semiconductors or carbon nanotube films, their performances are limited by the carrier scattering at the molecular to molecular or nanotube-to-nanotube junctions. Here in this study, we demonstrate on the vertical semiconductor crystal array embedded in flexible polymer matrix. Such structures can relieve the strain effectively, thereby accommodating large flexural deformation. To achieve such structure, we first established a low-temperature solution-phase synthesis of single crystalline 3D architectures consisting of epitaxially grown ZnO constituent crystals by position and growth direction controlled growth strategy. The ZnO vertical crystal array was integrated into a piece of polydimethylsiloxane (PDMS) substrate, which was then mechanically detached from the hard substrate to achieve the freestanding ZnO-polymer composite. In addition, the characteristics of transferred ZnO were confirmed by additional structural and photoluminescent measurements. The ZnO vertical crystal array embedded in PDMS was further employed as pressure sensor that exhibited an active response to the external pressure, by piezoelectric effect of ZnO crystal.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.1
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• pp.16-20
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• 2005

In order to improve electrical conductivity and mechanical properties of 8YSZ SOFC electrolyte material, we used Al₂O₃ as an additive and applied the spark plasma sintering (SPS) method. The sintered bodies were densified above 96 ％ of theoretical density at 1200℃ and possessed microstructures composed of homogeneous grains less than 1 ㎛ in size. The addition of Al₂O₃ improved fracture toughness and bending strength by inhibiting grain growth of 8YSZ and increased total ionic conductivity because grain interior conductivity appeared to remain constant and grain boundary conductivity increased. It was assumed that the dissolution of Al₂O₃ into 8YSZ which was inevitable problem at commercial sintering method was effectively prohibited by the SPS technique with a relatively low sintering temperature and the reaction between Al₂O₃ and SiO₂ present at grain boundary to produce the crystalline Al/sub 2-x/Si/sub l-y/O/sub 5/ phase, resulting in the increase of grain boundary conductivity.

• Composites Research
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• v.31 no.2
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• pp.63-68
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• 2018

Thermoplastic composite has been limitedly used in high performance aerospace industry due to relatively low mechanical properties even though it has various advantages. But, thermoplastic aromatic polymer composite has recently been researched and utilized much. In this study, PEEK and PPS neat resin film as representative thermoplastic aromatic polymer were processed through continuous heating, cooling and reheating cycle. Property change such as glass transition temperature and melting temperature were identified and crystallinity variation by different cooling rate were evaluated. In the first (heating) run, polymer specimens were kept for 5 minutes at higher temperature than melting point to remove previous thermal history, and crystallization reaction was controlled by adjusting cooling rate to 2, 5, 10, 20 and $40^{\circ}C/minute$ in the second (cooling) run. In the third (heating) run, specimen crystallinity were verified by measuring the melting enthalpy. The initial specimens containing high portion of amorphous structure exhibited cold crystallization and clear glass transition in the first run whereas they did not show in the third run due to the increase of crystalline structure portion. As cooling rate decreases through the second cooling run, the crystallinity of the specimen increased. PEEK polymer had 21.9~39.3% crystallinity depending on cooling rate change whereas PPS polymer showed 29.1~31.2%.