• 한국결정성장학회지
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• 제13권4호
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• pp.172-175
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• 2003

We have investigated effects of the lattice mismatch between the LPE films and the substrates. We have grown $La_{2-x}Sr_{x}CuO_{4}$(x=0.1 to 0.15) single crystalline films on single crystalline substrates having different lattice parameter ratio c/a e.g., $La_{2-x}Sr_{x}Cu_{1-y}Zn_{y}O_{4},\;La_{2-x}Ba_{x}CuO_{4},\; LaSrAlO_{4}\;and\;La_{2-x}Sr_{x}Cu_{1-y}Al_{y}O_{4}$ etc., using the IR-LPE technique. The superconducting properties of the grown films were found to vary significantly depending on the lattice mismatch with different substrates.

• International Journal of Precision Engineering and Manufacturing
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• 제9권4호
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• pp.11-15
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• 2008

Metrology tools with the ability to measure spindle motion error on the order of a nanometer are required due to recent advances in nanotechnology. We propose a direct measurement method for the radial motion error of a precision spindle using a regular crystalline lattice and a scanning tunneling microscope (STM). A highly oriented pyrolytic graphite (HOPG) crystal combined with an STM is used as a two-dimensional reference scale. The measurement principle and the preliminary experimental results are discussed in this article. The preliminary experimental results demonstrated that the proposed method has the capability to incorporate a two-dimensional encoder to measure the spindle motion error.

• 한국전기전자재료학회논문지
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• 제14권3호
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• pp.257-262
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• 2001

Single crystalline films of La doped YIG(yttrium iron garnet) were grown by the liquid phase epitaxy. The lattice constants of films obtained by DCD(double crystalline diffractometer) measurement increased with increasing La contents in films. In particular, lattice constants of films grown wiht Y/La=20 solution were nearly same as those of GGG (gadolinium gallium garnet) substrate. The saturation magnetization measured with VSM (vibrating sample magnetometer) was about 1750Gauss which is the same as that of pure YIG irrespective of La contents in films. FMR(ferromagnetic resonance) linewidth of La doped YIG was smaller than that of pure YIG. Since appropriate La doping decreases the lattice mismatch between film and substrate, the FMR linewidth was Y/La=20 in this experiment.

• Applied Microscopy
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• 제45권1호
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• pp.9-15
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• 2015

In the present study, microstructural evolution in CuCrFeNi, CuCrFeNiMn, and CuCrFeNiMnAl alloys has been investigated. The as-cast CuCrFeNi alloy consists of a single fcc phase with the lattice parameter of 0.358 nm, while the as-cast CuCrFeNiMn alloy consists of (bcc+fcc1+fcc2) phases with lattice parameters of 0.287 nm, 0.366 nm, and 0.361 nm. The heat treatment of the cast CuCrFeNiMn alloy results in the different type of microstructure depending on the heat treatment temperature. At $900^{\circ}C$ a new thermodynamically stable phase appears instead of the bcc solid solution phase, while at $1,000^{\circ}C$, the heat treated microstructure is almost same as that in the as-cast state. The addition of Al in CuCrFeNiMn alloy changes the constituent phases from (fcc1+fcc2+bcc) to (bcc1+bcc2).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.383-383
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• 2010

Gas-phase hydrogen atoms create a variety of chemical and physical phenomena on Si surfaces: adsorption, abstraction of pre-adsorbed H, Si etching, Si amorphization, and penetration into the bulk lattice. Thermal desorption/evolution analyses exhibited three distinct peaks, including one from the crystalline bulk. It was previously found that thermal-energy gaseous H(g) atoms penetrate into the Si(100) crystalline bulk within a narrow substrate temperature window(centered at ~460K) and remain trapped in the bulk lattice before evolving out at a temperature as high as ~900K. Developing and sustaining atomic-scale surface roughness, by H-induced silicon etching, is a prerequisite for H absorption and determines the $T_s$ windows. Issues on the H(g) absorption to be further clarified are: (1) the role of the detailed atomic surface structure, together with other experimental conditions, (2) the particular physical lattice sites occupied by, and (3) the chemical nature of, absorbed H(g) atoms. This work has investigated and compared the thermal H(g) atom absorptivity of Si(100), Si(111) and Si(110) samples in detail by using the temperature programmed desorption mass spectrometry (TPD-MS). Due to the differences in the atomic structures of, and in the facility of creating atom-scale etch pits on, Si(100), (100) and (110) surfaces, the H-absorption efficiency was found to be larger in the order of Si(100) > Si(111) > Si(110) with a relative ratio of 1 : 0.22 : 0.045. This intriguing result was interpreted in terms of the atomic-scale surface roughening and kinetic competition among H(g) adsorption, H(a)-by-H(g) abstraction, $SiH_3(a)$-by-H(g) etching, and H(g) penetraion into the crystalline silicon bulk.

• 펄프종이기술
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• 제41권4호
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• pp.58-64
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• 2009

This study was carried out to prepare high porosity pulp for oil and air filter media from commercial grade NBKP with 6 - 20% NaOH treatment. The fiber width of NBKP remarkably decreased by NaOH pretreatment. The air permeability of the test sheet prepared from alkali-pretreated NBKP increased with increasing NaOH concentration up to 15%. The burst factor was greatly decreased by alkali pretreatment. By 15 - 20% NaOH pretreatment of NBKP, it could be possible to prepare a high porosity pulp. It seems that the high porosity of the pulp was due to a strong swelling and a great change of the cellulose crystalline lattice from cellulose I to cellulose II with NaOH treatment of NBKP. The study suggested that alkali- pretreated NBKP could be used for manufacturing oil and air filter media.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.19-22
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• 2002

Three different ZnO nanomaterials (nanobelts, nanorods, and nanowires) were synthesized at three different substrate temperatures from the thermal evaporation of ball-milled ZnO powders at $1380^{\circ}C$. Transmission electron microscopy (TEM) revealed that the ZnO nanobelts are single crystalline with the growth direction perpendicular to the (010) lattice planes, and that the ZnO nanorods and nanowires are single crystalline with the growth directions perpendicular to the (001) and (110) lattice planes, respectively. In photoluminescence (PL), the peak energy of near band-edge (NBE) emission was determined for nanobelts, nanorods, and nanowires.

• Transactions on Electrical and Electronic Materials
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• 제4권5호
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• pp.1-5
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• 2003

ZnO nanobelts, nanorods, and nanowires were synthesized at three different substrate temperatures from the thermal evaporation of ball-milled ZnO powders at 1380$^{\circ}C$. Transmission electron microscopy (TEM) revealed that the ZnO nanobelts are single crystalline with the growth direction perpendicular to the (010) lattice planes, and that the ZnO nanorods and nanowires are single crystalline with the growth directions perpendicular to the (001) and (110) lattice planes, respectively. In cathodoluminescence (CL), the peak energy of near bandedge (NBE) emission was determined for nanobelts, nanorods, and nanowires.

• E2M - 전기 전자와 첨단 소재
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• 제10권10호
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• pp.1005-1010
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• 1997

ZnS:Mn thin film was made by coevaporation with Electron Beam Evaparation(EBE) method. And structural and optical characteristics of ZnS:Mn thin films were investigated by substrate temperature annealing temperature and dopant Mn. When ZnS:Mn thin film was well deposited with cubic crystalline at substrate temperature of 30$0^{\circ}C$ its surface index was [111] and its lattice constant of a was 5.41$\AA$. Also When ZnA:Mn thin film was well made with hexagonal crystalline at substrate temperature of 30$0^{\circ}C$annealing temperature of 50$0^{\circ}C$and annealing time of 60min its miller indices were (0002) (1011), (1012) and (1120). And its lattice constant of a and c was 3.88$\AA$and 12.41$\AA$ respectively. Finally hexagonal ZnS:Mn thin film with dopant Mn of 0.5wt% had fundamental absorption wavelength of 342nm. And so its energy bandgap was about 3.62eV.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.101-102
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• 2009

SGOI MOSFETs with various Ge mole fractions were fabricated and compared to the SOI MOSFET. SGOI MOSFETs have a lager drain current and higher effective mobility than the SOI MOSFET as increased Ge mole fractions. The lattice constant difference causes lattice mismatch between the SiGe layer and the top-Si layer during the top-Si layer growth. However, SGOI MOSFETs have a lager leakage current at subthreshold region. Also, leakage current at subthreshold region increased with Ge mole fractions. This is attributable to the crystalline defects due to the lattice mismatch between the SiGe layer and the top-Si layer.