• 제목/요약/키워드: crystalline C film

검색결과 522건 처리시간 0.027초

Depositon of Transparent Conductive Films by a DC arc Plasmatron

  • Penkov, O.V.;Plaksin, V. Yu.;Joa, S.B.;Kim, J.H.;LEE, H.J.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.480-480
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    • 2010
  • In the present work, we studied effect of the deposition parameters on the structure and properties of ZnO films deposited by DC arc plasmatron. The varied parameters were gas flow rates, precursor composition, substrate temperature and post-deposition annealing temperature. Vapor of Zinc acetylacetone was used as source materials, oxygen was used as working gas and argon was used as the cathode protective gas and a transport gas for the vapor. The plasmatron power was varied in the range of 700-1,500 watts. Flow rate of the gases and substrate temperature rate were varied in the wide range to optimize the properties of the deposited coatings. After deposition films were annealed in the hydrogen atmosphere in the wide range of temperatures. Structure of coatings was investigated using XRD and SEM. Chemical composition was analyzed using x-ray photo-electron spectroscopy. Sheet conductivity was measured by 4-point probe method. Optical properties of the transparent ZnO-based coatings were studied by the spectroscopy. It was shown that deposition by a DC Arc plasmatron can be used for low-cost production of zinc oxide films with good optical and electrical properties. Sheet resistance of 4 Ohms cm was achieved after the deposition and 30 min annealing in the hydrogen at $350^{\circ}C$. Elevation of the substrate temperature during the deposition process up to $350^{\circ}C$ leads to decreasing of the film's resistance due to rearrangement of the crystalline structure.

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Temperature Dependent Octahedral Tilting Behaviors of Monoclinic and Tetragonal SrRuO3 Thin Films

  • Lee, Sung Su;Seo, Okkyun;Kim, Jaemyung;Song, Chulho;Hiroi, Satoshi;Chen, Yanna;Katsuya, Yoshio;Sakata, Osami
    • Journal of the Korean Physical Society
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    • 제73권10호
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    • pp.1529-1534
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    • 2018
  • We used in-situ synchrotron X-ray scattering to investigate phase transformations of octahedral tilted monoclinic $SrRuO_3$ (MSRO) and tetragonal SRO (TSRO) thin films on $SrTiO_3$ (STO) substrates. The octahedral tilted MSRO thin films were highly crystalline and the monoclinic distortion angle was $0.45^{\circ}$. The phase transition temperature from the MSRO to TSRO phase occurred at approximately $200^{\circ}C$ as a second order transition. Conversely, no phase transformations of the TSRO thin film occurred within the range from RT to $250^{\circ}C$. The octahedral $RuO_6$ rotation was strongly affected by the phase transformation in the SRO thin films.

양극산화에 의한 티타늄 산화막의 표면 특성 및 생체 활성에 관한 연구 (SURFACE CHARACTERISTICS AND BIOACTIVITY OF ANODICALLY OXIDIZED TITANIUM SURFACES)

  • 이상한;조인호
    • 대한치과보철학회지
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    • 제45권1호
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    • pp.85-97
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    • 2007
  • Statement of problem: Recently, anodic oxidation of cp-titanium is a popular method for treatment of titanium implant surfaces. It is a relatively easy process, and the thickness, structure, composition, and the microstructure of the oxide layer can be variably modified. Moreover the biological properties of the oxide layer can be controlled. Purpose: In this study, the roughness, microstructure, crystal structure of the variously treated groups (current, voltage, frequency, electrolyte, thermal treatment) were evaluated. And the specimens were soaked in simulated body fluid (SBF) to evaluate the effects of the surface characteristics and the oxide layers on the bioactivity of the specimens which were directly related to bone formation and integration. Materials and methods: Surface treatments consisted of either anodization or anodization followed thermal treatment. Specimens were divided into seven groups, depending on their anodizing treatment conditions: constant current mode (350V for group 2), constant voltage mode (155V for group 3), 60 Hz pulse series (230V for group 4, 300V for group 5), and 1000 Hz pulse series (400V for group 6, 460V for group 7). Non-treated native surfaces were used as controls (group 1). In addition, for the purpose of evaluating the effects of thermal treatment, each group was heat treated by elevating the temperature by $5^{\circ}C$ per minute until $600^{\circ}C$ for 1 hour, and then bench cured. Using scanning electron microscope (SEM), porous oxide layers were observed on treated surfaces. The crystal structures and phases of titania were identified by thin-film x-ray diffractmeter (TF-XRD). Atomic force microscope (AFM) was used for roughness measurement (Sa, Sq). To evaluate bioactivity of modified titanium surfaces, each group was soaked in SBF for 168 hours (1 week), and then changed surface characteristics were analyzed by SEM and TF-XRD. Results: On basis of our findings, we concluded the following results. 1. Most groups showed morphologically porous structures. Except group 2, all groups showed fine to coarse convex structures, and the groups with superior quantity of oxide products showed superior morphology. 2. As a result of combined anodization and thermal treatment, there were no effects on composition of crystalline structure. But, heat treatment influenced the quantity of formation of the oxide products (rutile / anatase). 3. Roughness decreased in the order of groups 7,5,2,3,6,4,1 and there was statistical difference between group 7 and the others (p<0.05), but group 7 did not show any bioactivity within a week. 4. In groups that implanted ions (Ca/P) on the oxide layer through current and voltage control, showed superior morphology, and oxide products, but did not express any bioactivity within a week. 5. In group 3, the oxide layer was uniformly organized with rutile, with almost no titanium peak. And there were abnormally more [101] orientations of rutile crystalline structure, and bonelike apatite formation could be seen around these crystalline structures. Conclusion: As a result of control of various factors in anodization (current, voltage, frequency, electrolytes, thermal treatment), the surface morphology, micro-porosity, the 2nd phase formation, crystalline structure, thickness of the oxide layer could be modified. And even more, the bioactivity of the specimens in vitro could be induced. Thus anodic oxidation can be considered as an excellent surface treatment method that will able to not only control the physical properties but enhance the biological characteristics of the oxide layer. Furthermore, it is recommended in near future animal research to prove these results.

Hot Wall Epitaxy(HWE)법에 의한 Cdln2S4 단결정 박막 성장과 열처리 효과 (The Effect of Thermal Annealing and Growth of Cdln2S4 Single Crystal Thin Film by Hot Wall Epitaxy)

  • 홍광준;이관교
    • 한국전기전자재료학회논문지
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    • 제15권11호
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    • pp.923-932
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    • 2002
  • A stoichiometric mixture of evaporating materials for CdIn$\_$2/S$\_$4/ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CdIn$\_$2/S$\_$4/ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by hot wall epitaxy(HWE) system. The source and substrate temperatures were 630 $\^{C}$ and 420 $\^{C}$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of CdIn$\_$2/S$\_$4/ single crystal thin films measured from Hall effect by van der Pauw method are 9.01$\times$10$\^$16/ cm$\^$-3/ and 219 ㎠/V$.$s at 293 K, respectively. From the optical absorption measurement, the temperature dependence of energy band gap on CdIn$\_$2/S$\_$4/ single crystal thin films was found to be Eg(T) = 2.7116 eV - (7.74 $\times$ 10$\^$-4/ eV) T$\^$2//(T+434). After the as-grown CdIn$\_$2/S$\_$4/ single crystal thin films was annealed in Cd-, S-, and In-atmospheres, the origin of point defects of CdIn$\_$2/S$\_$4/ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of V$\_$cd/, V$\_$s/, Cd$\_$int/ and S$\_$int/ obtained by PL measurements were classified as donors or accepters type. And we concluded that the heat-treatment in the S-atmosphere converted CdIn$\_$2/S$\_$4/ single crystal thin films to an optical p-type. Also, we confirmed that In in CdIn$\_$2/S$\_$4/GaAs did not from the native defects because In in CdIn$\_$2/S$\_$4/ single crystal thin films existed in the form of stable bonds.

Hot Wall Epitaxy(HWE)법에 의한 $AgInS_2$단결성 박막의 성장과 가전자대 갈라짐에대한 광전류 연구 (Photocurrent Study on the Splitting of the Valence Band and Growth of $AgInS_2$GaAs Single Crystal Thin Film by Hot Wall Epitaxy)

  • 홍광준
    • 한국결정학회지
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    • 제12권4호
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    • pp.197-206
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    • 2001
  • 수평 전기로에서 AgInS₂ 다결정을 합성하여 HWE(Hot Wall Epitaxy)방법으로 AgInS₂ 단결정 박막을 반절연성 GaAs(100)기판에 성장시켰다. AgInS₂ 단결정 박막의 성장 조건은 증발원의 온도 680℃, 기판의 온도 410℃였고 성장 속도는 0.5㎛/hr였다. AgInS₂ 단결정 박막의 결정성의 조사에서 10 K에서 광발광(photoluminescence)스펙트럼이 597.8 nm(2.0741 eV)에서 exciton emission스펙트럼이 가장 강하게 나타났으며, 또한 이중결정 X-선 요동곡선(DCRC)의 박폭치(FWHM)도 121 arcsec로 가장 작아 최적 성장 조건임을 알수 있었다. Hall 효과는 van der Pauw 방법에 의해 측정되었으며, 온도에 의존하는 운반자 농도와 이동도는 293K에서 각각 9.35×10/sup 16/㎤, 294㎠/V·s 였다. AgInS₂ /SI(SEmi-Insulated) GaAs(100) 단결정 박막의 광흡수와 광전류 spectra를 293K에서 10K까지 측정하였다. 광흡수 스펙트럼으로부터 band gap E/sub g/(T)는 Varshni 공식에 따라 계산한 결과 2.1365eV-(9.89×10/sup-3/eV/K/)T²(T+2930K)이었으며 광전류 스펙트럼으로부터 Hamiltopn matrix(Hopfield quasicubic mode)법으로 계산한 결과 crystal field splitting Δcr값이 0.1541eV이며 spin-orbit Δso 값은 0.0129eV임을 확인하였다. 10K일때 광전류 봉우리들은 n=1 일때 A₁-, B-₁와 C₁-exction 봉우림을 알았다.

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Hot Wall Epitaxy (HWE)법에 의한 $CuInSe_2$ 단결정 박막 성장과 점결함 (Growth and photoluminescience propeties for $CuInSe_2$ single crystal thin film by Hot Wall Epitaxy)

  • 홍광준;이상열
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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    • pp.111-112
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    • 2005
  • To obtain the single crystal thin films, $CuInSe_2$, mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wail epitaxy (HWE) system. The source and substrate temperatures were 620$^{\circ}C$ and 410$^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobilily of $CuInSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.62\times10^{16}$ $cm^{-3}$ and $296cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the CulnSe$_2$ obtained from the absorption spectra was well described by the Varshni's relation E$_g$(T) = 1.1851 eV - ($8.99\times10^{-4}$ ev/K)T$_2$/(T + 153K). After the as-grown $CuInSe_2$ single crystal thin films was annealed in Cu-, Se-, and In-atmospheres the origin of point defects of $CuInSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The nat ive defects of V$_{Cu}$, $V_{Se}$, Cu$_{int}$, and $Se_{int}$ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuInSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that In in $CuInSe_2$/GaAs did not form the native defects because In in $CuInSe_2$ single crystal thin films existed in the form of stable bonds.

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무전해도금법에 의한 Co-Ni-P 박막의 자기적특성에 관한 연구 (A Study on the Magnetic Properties of the Co-Ni-P thin Plate by Electroless Plating)

  • 김창욱;이철;윤성렬;정인
    • 한국재료학회지
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    • 제5권8호
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    • pp.1013-1019
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    • 1995
  • 본 연구에서는 무전해 도금범으로 polyester film 상에 Co-Ni-P 박막을 석출시키고, pH, 온도 그리고 도금용액의 농도에 따른 도금속도 및 석출된 도금박막의 합금조성과 합금조성에 따른 자기적 특성을 고찰하였다. 무전해도금의 석출속도는 pH 8.5, 온도 90℃일때 가장 좋았으며, 자기적 특성도 이 때가 가장 좋았다. 합금조성은 pH와 착화제의 농도에 따라서는 크게 변화하였으나, 그 밖의 인자들에 의해서는 변화하지 않았다. 최적조건에서 만들어진 박막의 합금조성은 코발트가 78%, 니켈이 16%, 인이 6%였고, 보자력은 370 Oe, 각형비는 0.65였다. 박막은 합금조성에 따라 경질자성막과 연질자성막의 두가지 형태로 변화했고, 니켈이 30% 이상 공석(共席)되었을 때, 연질자성막으로 되었다. 연질자성막일때, 합금박막의 결정구조는 니켈이 강하게 배향된 비정질 형태를 나타냈고, 경질자성 막일때는, 코발트(101)과 (100)면으로 배향된 α-코발트의 hcp 결정구조를 나타내었다.

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CdS-TiO2 복합 광촉매계에 의한 수소제조 (Hydrogen production using CdS-TiO2 composite photocatalysts)

  • 김수선;장점석;소원욱;김광제;문상진
    • 한국수소및신에너지학회논문집
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    • 제11권4호
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    • pp.161-169
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    • 2000
  • CdS-$TiO_2$ 필름형 복합 광촉매계를 이용하여 물로부터 수소의 제조시, 촉매입자의 물리 화학적 특성변화에 따른 광전류값과 수소발생속도 등 촉매활성과의 상관성을 조사하였다. 졸-겔법에 의해 상온에서 얻어진 CdS 및 $TiO_2$ nano-sol을 $240^{\circ}C$에서 수열처리하여 물성제어를 하였으며, 캐스팅법에 의해 입자막으로 제조하였다. 광전기화학적으로 측정한 입자막전극의 광전류값 및 광화학적으로 측정한 수소발생속도는 각 입자의 결정형, 입자크기 및 Cds/$TiO_2$ 몰비 등에 따라 1.2~2.6 mA/cm2, $1.0{\sim}1.6{\times}10-3mol/hr$의 범위에서 변화하였다. 본 CdS계 가시광형 촉매의 활성은 입자막을 구성하는 각 CdS, $TiO_2$ 일차입자의 물성과 상호 작용에 크게 좌우됨을 알 수 있었으며, 순수 CdS계에 비해 현저한 광안정성의 증가를 보여 주었다.

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분자선 증착법에 의해 성장한 MnTe 박막의 자기적 및 전기수송 특성 (Magnetic and Electric Transport Properties of MnTe Thin Film Grown by Molecular Beam Epitaxy)

  • 김우철;배성환;김삼진;김철성;김광주;윤정범;정명화
    • 한국자기학회지
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    • 제17권2호
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    • pp.81-85
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    • 2007
  • 분자선 증착법을 이용하여 MnTe 박막을 Si(100):B 및 Si(111) 기판 위에 성장시켰다. 두개의 K-cell을 사용하여 기판온도 $400^{\circ}C$ 및 Te가 풍부한 조건에서 MnTe 합성이 잘 이루어졌다. 이 경우 증착속도는 $1.1 {\AA}/s$이었고 성장된 층의 두께는 $700{\AA}$ 정도이었다. 합성된 MnTe 박막들에 대하여 X선회절, 초전도 양자 간섭계, Physical Property Measurement System, 홀효과 측정 등을 사용하여 그 구조적, 자기적, 전기적 특성들을 조사하였다. X선회절 측정 결과 Si(100) : B및 Si(111)기판 위에 성장된 MnTe는 다결정성의 hexagonal 구조를 나타내었으며, 자기적, 전기적 특성 측정 결과 분말형태의 MnTe와 비교하여 매우 다른 특성을 나타내었다. Zero-field-cooling(ZFC) 및 field-cooling(FC) 조건에서 취해진 자화율 측정에서 다결정 박막은 21 K, 49K, 210K 근처에서 자기적 전이 현상을 보였으며, ZFC와 FC 자화율 사이의 큰 불가역성이 나타났다. MnTe박막의 5K와 300K에서의 자기이력곡선은 강자성 상태를 나타내었으며 잔류자화값과 보자력은 5 K에서 $M_R= 3.5emu/cm^3$$H_c=55Oe$를, 300 K에서 $M_R= 2.1emu/cm^3$$H_c=44Oe$로 나타났다. 전기수송 특성 측정 결과, 온도에 따른 비저항은 저온에서 Mott variable range hopping 전도특성을 나타내는 전형적인 반도체 성질을 보여주었다.

Hot Wall epitaxy(HWE)법에 의한 $CdGa_2Se_4$ 단결정 박막의 성장과 가전자대 갈라짐에 대한 광전류 연구 (Photocurrent study on the splitting of the valence band and growth of $CdGa_2Se_4$ single crystal thin film by hot wall epitaxy)

  • 박창선;홍광준
    • 한국결정성장학회지
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    • 제17권5호
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    • pp.179-186
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    • 2007
  • [ $CdGa_2Se_4$ ] 단결정 박막을 수평 전기로에서 합성한 $CdGa_2Se_4$ 다결정을 증발원으로하여, hot wall epitaxy(HWE) 방법으로 증발원과 기판(반절연성-GaAs(100))의 온도를 각각 $630^{\circ}C,\;420^{\circ}C$로 고정하여 성장하였다. 이때 단결정 박막의 결정성은 광발광 스펙트럼과 이중결정 X-선 요동곡선(DCRC)으로 부터 구하였다. Hall 효과는 van der Pauw 방법에 의해 측정되었으며, 293K에서 운반자 농도와 이동도는 각각 $8.27{\times}10^{17}cm^{-3},\;345cm^2/V{\cdot}s$였다. $CdGa_2Se_4/SI$(Semi-Insulated) GaAs(100) 단결정 박막의 광흡수와 광전류 spectra를 293K에서 10K까지 측정하였다. 광흡수 스펙트럼으로부터 band gap $E_g(T)$는 Varshni 공식에 따라 계산한 결과 $E_g(T)=2.6400eV-(7.721{\times}10^{-4}eV/K)T^2/(T+399K)$였다. 광전류 스펙트럼으로부터 Hamilton matrix(Hopfield quasicubic mode)법으로 계산한 결과 crystal field splitting 에너지 ${\Delta}cr$값이 106.5meV이며 spinorbit 에너지 ${\Delta}so$값은 418.9meV임을 확인하였다. 10K일 때 광전류 세 봉우리들은 $A_{1^-},\;B_{1^-}$$C_{11}-exciton$ 봉우리임을 알았다.