• Title/Summary/Keyword: crystal structure$N_2$ gas.

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Analysis of Sputter-Deposited SnO thin Film with SnO/Sn Composite Target (SnO/Sn 혼합 타겟을 이용한 SnO 박막 제조 및 특성)

  • Kim, Cheol;Kim, Sungdong;Kim, Sarah Eunkyung
    • Korean Journal of Materials Research
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    • v.26 no.4
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    • pp.222-227
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    • 2016
  • Tin oxides have been studied for various applications such as gas detecting materials, transparent electrodes, transparent devices, and solar cells. p-type SnO is a promising transparent oxide semiconductor because of its high optical transparency and excellent electrical properties. In this study, we fabricated p-type SnO thin film using rf magnetron sputtering with an SnO/Sn composite target; we examined the effects of various oxygen flow rates on the SnO thin films. We fundamentally investigated the structural, optical, and electrical properties of the p-type SnO thin films utilizing X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), UV/Vis spectrometry, and Hall Effect measurement. A p-type SnO thin film of $P_{O2}=3%$ was obtained with > 80% transmittance, carrier concentration of $1.12{\times}10^{18}cm^{-3}$, and mobility of $1.18cm^2V^{-1}s^{-1}$. With increasing of the oxygen partial pressure, electrical conductivity transition from p-type to n-type was observed in the SnO crystal structure.

Effect of Low Temperature Heat Treatment on the Physical and Chemical Properties of Carbon Anode Materials and the Performance of Secondary Batteries (저온 열처리가 탄소 음극재의 물리·화학적 특성 및 이차전지 성능에 미치는 영향)

  • Whang, Tae Kyung;Kim, Ji Hong;Im, Ji Sun;Kang, Seok Chang
    • Applied Chemistry for Engineering
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    • v.32 no.1
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    • pp.83-90
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    • 2021
  • In this study, effects of the physical and chemical properties of low temperature heated carbon on electrochemical behavior as a secondary battery anode material were investigated. A heat treatment at 600 ℃ was performed for coking of petroleum based pitch, and the manufactured coke was heat treated with different heat temperatures at 700~1,500 ℃ to prepare low temperature heated anode materials. The physical and chemical properties of carbon anode materials were studied through nitrogen adsorption and desorption, X-ray diffraction (XRD), Raman spectroscopy, elemental analysis. Also the anode properties of low temperature heated carbon were considered through electrochemical properties such as capacity, initial Coulomb efficiency (ICE), rate capability, and cycle performance. The crystal structure of low temperature (≤ 1500 ℃) heated carbon was improved by increasing the crystal size and true density, while the specific surface area decreased. Electrochemical properties of the anode material were changed with respect to the physical and chemical properties of low temperature heated carbon. The capacity and cycle performance were most affected by H/C atomic ratio. Also, the ICE was influenced by the specific surface area, whereas the rate performance was most affected by true density.

Characteristics of $Ta_{2}O_{5}$ Films by RF Reactive Sputtering (RF 반응성 스펏터링으로 제조한 $Ta_{2}O_{5}$ 막의 특성)

  • Park, Wug-Dong;Keum, Dong-Yeal;Kim, Ki-Wan;Choi, Kyu-Man
    • Journal of Sensor Science and Technology
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    • v.1 no.2
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    • pp.173-181
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    • 1992
  • Tantalum pentoxide($Ta_{2}O_{5}$) thin films on p-type (100) silicon wafer were fabricated by RF reactive sputtering. Physical properties and structure of the specimens were examined by XRD and AES. From the C-V analysis, the dielectric constant of $Ta_{2}O_{5}$ films was in the range of 10-12 in the reactive gas atmosphere in which 10% of oxygen gas is mixed. The ratio of Ta : 0 was 1 : 2 and 1 : 2.49 by AES and RBS examination, respectively. The heat-treatment at $700^{\circ}C$ in $O_{2}$ ambient led to induce crystallization. When the heat-treatment temperature was $1000^{\circ}C$, the dielectric constant was 20.5 in $O_{2}$ ambient and 23 in $N_{2}$ ambient, respectively. The crystal structure of $Ta_{2}O_{5}$ film was pseudo hexagonal of ${\delta}-Ta_{2}O_{5}$. The flat band voltage shift(${\Delta}V_{FB}$) of the specimens and the leakage current density were decreased for higher oxygen mixing ratio. The maximum breakdown field was 2.4MV/cm at the oxygen mixing ratio of 10%. The $Ta_{2}O_{5}$ films will be applicable to hydrogen ion sensitive film and gate oxide material for memory device.

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The Methane Reforming by $CO_2$ Using Pelletized Co-Ru-Zr-Si Catalyst (성형 Co-Ru-Zr-Si 촉매를 이용한 이산화탄소에 의한 메탄 리포밍)

  • Nam, Jeong-Kwang;Lee, Ji-Hye;Song, Sang-Hoon;Ahn, Hong-Chan;Chang, Tae-Sun;Suh, Jeong-Kwon;Kim, Seong-Bo
    • Applied Chemistry for Engineering
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    • v.23 no.2
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    • pp.176-182
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    • 2012
  • The methane dry reforming has received the considerable attention in recent years, mainly as an attractive route to produce synthesis gas (CO, $H_2$) from green-house gases ($CH_4$, $CO_2$) for resources. However, this process has not been commercialized due to the high temperature and catalyst deactivation. In this study, Co-Ru-Zr catalysts supported on $SiO_2$ were studied for the characterization of methane dry reforming reaction and the preliminary data for process development were achieved. The crystal structure of catalysts was measured by XRD, the surface area and pore size were analyzed by BET, and the element composition of catalyst were analyzed by EDS. Conversions of methane and carbon dioxide were analyzed by GC. In addition, reaction rate constants were obtained from the reaction kinetic study and the optimum catalyst size that does not affect mass transfer from reactants was also determined. The selected pellet-type catalyst maintained activation for 720 h at $850^{\circ}C$.