• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.4
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• pp.127-134
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• 2015

Aluminum nitride (AlN) single crystals have attracted much attention for a next-generation semiconductor application because of wide bandgap (6.2 eV), high thermal conductivity ($285W/m{\cdot}K$), high electrical resistivity (${\geq}10^{14}{\Omega}{\cdot}cm$), and high mechanical strength. The bulk AlN single crystals or thin film templates have been mainly grown by PVT (sublimation) method, flux method, solution growth method, and hydride vapor phase epitaxy (HVPE) method. Since AlN suffers difficulty in commercialization due to the defects that occur during single crystal growth, crystalline quality improvement via defects analyses is necessary. Etch pit density (EPD) analysis showed that the growth misorientations and the defects in the AlN surface exist. Transmission electron microscopy (TEM) and electron back-scattered diffraction (EBSD) analyses were employed to investigate the overall crystalline quality and various kinds of defects. TEM studies show that the morphology of the AlN is clearly influenced by stacking fault, dislocation, second phase, etc. In addition EBSD analysis also showed that the zinc blende polymorph of AlN exists as a growth defects resulting in dislocation initiator.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.5
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• pp.447-453
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• 1999

Congruent $LiNbO_3$ crystals with doped Mg and codoped with Mn or Fe were grown by the Czochralski method. It is known that the physical properties of $LiNbO_3$ depend strongly on the addition of Mg and transition metals. This is established by studying the following properties; XRD patterns, the phase transition temperature, energy of the fundamental absorption edge, the shape of the absorption band of the $OH^-$ vibration and lines of the ESR of $Fe^{3+},\; Mn^{2+}$. The position of the UV absorption edge and the shape and peak point of the absorption band of the $OH^-$ vibrational band changed monotonously up to a critical concentration of $Mg^{2+}$ ions. The mechanism of the incorporation of Mg ions changes at this concentration. The transition temperature was estimated by measuring the dielectric temperature behavior up to $1230^{\circ}C$ in a frequency range of 100Hz to 10MHz. EPR of $Mn^{2+}\;and\; Fe^{3+}$ ions were employed to investigated the Mg doping effects in the $LiNbO_3$ crystal. The increase of linewidths and the asymmetry of signals were observed in all crystals. New signals of $Fe^{3+}$ arising from the new centers were observed I the heavily Mg-doped crystals.

• Maxillofacial Plastic and Reconstructive Surgery
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• v.38
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• pp.29.1-29.9
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• 2016

Background: The objective of this study was to evaluate xenograft degradation velocity when treated with 4-hexylresorcinol (4HR). Methods: The scapula of a cow was purchased from a local grocery, and discs (diameter 8 mm, thickness 1 mm) were prepared by trephine bur. Discs treated with 4HR were used as the experimental group. Untreated discs were used as the control. X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), antibacterial test, endotoxin test, and scanning electron microscopy (SEM) were performed on the discs. In vivo degradation was evaluated by the rat calvarial defect model. Results: The XRD and FT-IR results demonstrated successful incorporation of 4HR into the bovine bone. The experimental disc showed antibacterial properties. The endotoxin test yielded results below the level of endotoxin contamination. In the SEM exam, the surface of the experimental group showed needle-shaped crystal and spreading of RAW264.7 cells. In the animal experiments, the amount of residual graft was significantly smaller in the experimental group compared to the control group (P = 0.003). Conclusions: In this study, 4HR was successfully incorporated into bovine bone, and 4HR-incorporated bovine bone had antibacterial properties. In vivo experiments demonstrated that 4HR-incorporated bovine bone showed more rapid degradation than untreated bovine bone.

• Korean Journal of Optics and Photonics
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• v.28 no.1
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• pp.1-8
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• 2017

A method for inspecting defects in display substrates utilizing Fourier optics is proposed in this paper. A cost-effective inspection system can be realized with the proposed method, because it does not require a high-magnification microscope. Also, the proposed method can avoid tight tolerance for variations in displacement between substrate and camera, which is stems from shallow depth of field of the high-magnification microscope. In addition, possible damage caused by collisions between substrate and the inspection equipment can be avoided. The decision algorithm can be simpler than for a conventional inspection system, because spatial shift of periodic substrate patterns does not affect the intensity distribution of the diffracted light, by the Fourier transform property. The proposed method is explained with numerical studies, and experiments are carried out to check its feasibility for color-filter substrates of a liquid-crystal display.

• Archives of Plastic Surgery
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• v.35 no.3
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• pp.312-315
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• 2008

Purpose: Amelanotic melanoma represents a melanoma with an absence or a small number of melanin pigments and comprises 2% of all melanomas. These melanomas are frequently misdiagnosed, probably because of its nonspecific clinical features and difficulty in diagnosis, resulting in delayed diagnosis and treatment. We report a patient with amelanotic melanoma, who underwent surgical treatment with sentinel lymph node biopsy using gamma probe. Methods: A 32-year-old female was presented with a slowly growing ill-defined, hypopigmented nonerythematous lesion with nail defect on right index finger tip. Preoperative punch biopsy was performed, showing an amelanotic melanoma. Sentinel lymph node biopsy was done using gamma probe(Crystal probe system, CRYSTAL PHOTONICS GmbH, Germany) and confirmed no evidence of regional lymph node metastases. The patient underwent amputation at the proximal interphalangeal joint. Results: Histopathologic findings showed superficial spreading melanoma. There were no melanin pigments in Hematoxylin & Eosin stain but positive immunohistochemical stainings for S-100 protein and Hmb45, which were consistent with amelanotic melanoma. Patient's postoperative course was uneventful without any complication and had no evidence of recurrence of tumor in 6 months follow-up period. Conclusion: Amelanotic melanoma is extremely rare subtype of malignant melanoma with histopathologic findings of atypical melanocytes without melanin pigments. Early detection is crucial since survival is strongly related to tumor thickness and tissue invasion at the time of diagnosis. Wide excision is the treatment of choice and other conjunctive therapy has not been successful.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.187-207
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• 1999

The thermal distributions near the growth interface of 150mm CZ crystals were measured by three thermocouples installed at the center, middle (half radius) and edge (10m from surface) of the crystals. The results show that larger growth rates produced smaller thermal gradients. This contradicts the widely used heat flux balance equation. Using this fact, it si confirmed in CZ crystals that the type of point defects created is determined by the value of the thermal gradient (G) near the interface during growth, as already reported for FZ crystals. Although depending on the growth systems the effective lengths of the thermal gradient for defect generation are varied, were defined the effective length as 10mm from the interface in this experiment. If the G is roughly smaller than 20C/cm, vacancy rich CZ crystals are produced. If G is larger than 25C/cm, the species of point defects changes dramatically from vacancies to interstitial. The experimental results which FZ and CZ crystals are detached from the melt show that growth interfaces are filled with vacancy. We propose that large G produces shrunk lattice spacing and in order to relax such lattice excess interstitial are necessary. Such interstitial recombine with vacancies which were generated at the growth interface, next occupy interstitial sites and residuals aggregate themselves to make stacking faults and dislocation loops during cooling. The shape of the growth interface is also determined by the distributions of G across the interface. That is, the small G and the large G in the center induce concave and convex interfaces to the melt, respectively.

• Journal of the Korean Vacuum Society
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• v.13 no.3
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• pp.120-126
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• 2004

A damage-reduced trench was investigated in view of the defect distribution along trench sidewall and bottom using high resolution transmission electron microscopy, which was formed by HBr plasma and additive gases in magnetically enhanced reactive ion etching system. Adding $O_2$ and other additive gases into HBr plasma makes it possible to eliminate sidewall undercut and lower surface roughness by forming the passivation layer of lateral etching. To reduce the RIE induced damage and obtain the fine shape trench corner rounding, we investigated the hydrogen annealing effect after trench formation. Silicon atomic migration on trench surfaces using high temperature hydrogen annealing was observed with atomic scale view. Migrated atoms on crystal surfaces formed specific crystal planes such as (111), (113) low index planes, instead of fully rounded comers to reduce the overall surface energy. We could observe the buildup of migrated atoms against the oxide mask, which originated from the surface migration of silicon atoms. Using this hydrogen annealing, more uniform thermal oxide could be grown on trench surfaces, suitable for the improvement of oxide breakdown.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.7
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• pp.275-281
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• 2003

$Zn_{0.5}Cd_{0.5}Al_{2}Se_{4}$ and $Zn_{0.5}Cd_{0.5}Al_{2}Se_{4}$:$Co^{2+}$ single crystals were grown by CTR method. The grown single crystals have defect chalcopyrite structure with lattice constant a=5.5966$\AA$, c=10.8042$\AA$ for the pure, a=5.6543$\AA$, c=10.8205$\AA$ for the Co-doped single crystal, respectively. The optical energy band gap was given as indirect band gap. The optical energy band gap was decreased according to add of Co-impurity Temperature dependence of optical energy band gap was fitted well to the Varshni equation. From this relation, we can deduced the entropy, enthalpy and heat capacity. Also, we can observed the Co-impurity optical absorption peaks assigned to the $Co^{2+}$ ion sited at the $T_{d}$ symmetry lattice and we consider that they were attributed to the electron transitions between energy levels of ions.

• Korean Journal of Food Science and Technology
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• v.54 no.2
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• pp.241-246
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• 2022

Antibiotic resistance is a serious problem to food safety as well as human healthcare. To avoid this, there are several approaches for a new class of antibiotic agents that target only production of virulence factors such as biofilm without bacterial growth defect. The objective of this study was to investigate the antibiofilm activity of tuberostemonine in Staphylococcus aureus. Tuberostemonine significantly reduced the biofilm formation (26.07-47.02%) in the crystal violet assay whereas there were no effect on S. aureus growth. The dispersion in preformed biofilm was also observed by confocal laser scanning microscopy (CLSM). Quantification real-time PCR revealed that the icaA and agrA expression having an important role in biofilm production of S. aureus were strongly affected with tuberostemonine. These results suggest that tuberostemonine has potential for controlling biofilm formation and dispersion by effect on virulence regulation of S. aureus.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.50-50
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• 2009

In this paper, the plasma doping is performed on p-type wafers using $PH_3$ gas(10 %) diluted with He gas(90 %). The wafer is placed in the plasma generated with 200 W and a negative DC bias (1 kV) is applied to the substrate for 60 sec under no substrate heating. the flow rate of the diluted $PH_3$ gas and the process pressure are 100 sccm and 10 mTorr, respectively. In order to diffuse and activate the dopant, annealing process such as rapid thermal annealing (RTA) is performed. RTA process is performed either in $N_2$, $O_2$ or $O_2+N_2$ ambient at $900{\sim}950^{\circ}C$ for 10 sec. The sheet resistance is measured using four point probe. The shallow n+/p doping profiles are investigated using secondary ion mass spectromtry (SIMS). The analysis of crystalline defect is also done using transmission electron microscopy (TEM) and double crystal X-ray diffraction (DXRD).