• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.7
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• pp.508-513
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• 1999

The response properties of quartz crystal coated with stearic acid LB films to organic gases were investigated by measuring the shift of resonant frequency. Stearic acid was used as a sensing material and deposited on the surface of quartz crystal using the Langmuir-Blodgett(LB) method. The effect of temperature on the quartz crystal coated with stearic acid LB films was also investigated by Scanning Maxwell-stress Microscopy(SMM). As a result, the sensitivity of the quartz crystal coated with LB films to organic gases is dependent on temperature, thickness of LB film and molecular weight of organic gas.

• 제어로봇시스템학회:학술대회논문집
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• 2004.08a
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• pp.1659-1661
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• 2004

Measurement of supersaturation is important in crystallization processes, because it is one of key factors to control crystal size distribution and shape determining product quality. A monitoring system of the supersaturation using a quartz crystal sensor is applied to the supersaturation measurement. From the variation of resonant frequency, the beginning of the formation of salt crystal on the sensor surface is detected while the sensor is directly cooled down. The degree of supersaturation is computed from the solubility difference at the temperatures of the salt solution and the sensor. The performance of the propsed system of the supersaturation measurement is examined by applying the system to the crystallization of three different salt solutions. The experimental outcome compared with eye observation result and photographic analysis indicates that the proposed system is effective and useful to determine the supersaturation in the crystallization process. In addition, the microscopic monitoring of the initial stage crystallization is available with the sensor system.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.1 no.1
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• pp.66-73
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• 1991

During the growth of macroscopically dislocation-free Czochralski silicon crystal, micro precipitates causing stacking faults in the silicon wafer during the oxidation are formed Thermal history the cryscausing acquire during the growth process is known to be a key factor determining the nucleation of this micro precipitates. In this article, various mechanisms suggested on the formation of microdefects in the silicon crystal are reviewed to secure the nucleation mechanism of the micro precipitates causing OSF whose pattern is normally ring or annular in CZ silicon crytal. B-defects which are known as vacancy clustering are considered to be the heterogeneous nucleation sites for the micro precipitates causing OSF in the CZ silicon crystals.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.1 no.1
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• pp.74-81
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• 1991

The temperature profile of Czochralski single crystal growth system was simulated considering the fluid flow and surface radiation heat transfer. View factors of surface elements were calculated for radiation heat transfer. Two phases(solid and liquid) were treated as a continuous phase by assigning artificial large viscosity to the solid phase and latent heat was accounted by iterative heat revolution method. The solidification model was applied to solid front of the pure Ga during the melting to verify the model. The whole simulation model of CZ system was applied to the growth Al single crystal.

• Journal of Sensor Science and Technology
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• v.23 no.6
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• pp.416-419
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• 2014

We grew a $Li_6Lu(BO_3)_3:Ce^{3+}$ single crystal as a new scintillator. And, the scintillation and thermoluminescence properties of the scintillator were determined. The emission spectrum of $Li_6Lu(BO_3)_3:Ce^{3+}$ is located in the range of 370~530 nm, peaking at 416 nm and 439 nm, due to the $5d{\rightarrow}4f$ transition of $Ce^{3+}$ ions. The fluorescence decay time of the crystal is composed two components. The fast component is 34 ns (84%) and the slow component is 125 ns (16%) of the crystal. The afterglow is caused by the electron and hole traps in the crystal lattice. We determined physical parameters of the traps in the crystal. The thermoluminescence trap are composed a trap. The determined activation energy (E) and frequency factor (s) of the TL trap are 1.05 eV and $4.4{\times}10^{10}s^{-1}$, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.2
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• pp.91-95
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• 2000

The effects of argon gas flow on the axial temperature gradient near the interface, the oxygen concentration, and the radial oxygen uniformity was investigated for 8-inch CZ silicon growth. As argon flow rate was increased, the temperature gradient was increased in the crystal near the crystavmelt interface and the oxygen content in the crystal was decreased. But the radial oxygen uniformity was deteriorated. It was found that argon flow is one of the important growing parameters to affect the quality of crystals such as oxygen content and uniformity.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.4
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• pp.136-142
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• 2020

Crystallization of zinc crystalline glaze requires demanding conditions such as the formation of a nucleating agent and the amount of nucleating agent, and growth of crystalline. Zinc crystalline glaze is hard to utilize in the industry because of its narrow range of the firing temperature, and the crystallization's dependency on the quality of zinc. Stimulation of zinc crystallization and formation of frit enable zinc crystalline glaze to be reconstituted in a various range of firing schedules, leading to the development of a competitive industrial glaze.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.1
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• pp.41-46
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• 1997

The change of flow field and the effects of convective heat transfer on the shape and location of melt/crystal interface has been studied during the crystal growth by the heat exchanger method. Although the thermal structure is stable in the crucible, the flow due to the natural convection driven by radial temperature gradient is significant, because the thermal stability is broken by the hemispherical melt/crystal interface shape. The maximum interface deflection with convection is smaller than without and the convective heat transfer should be considered to simulate the heat transfer process of heat exchanger method rigorously.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.12
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• pp.1045-1057
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• 2009

The authors investigated the InGaN/GaN multi-quantum well blue light emitting devices with the implementation of the photonic crystals fabricated at the top surface of p-GaN layer and the bottom interface of n-GaN layer. The top photonic crystals result in the lattice-dependent photoluminescence spectra at the wavelength of 450 nm and however, the bottom photonic crystal shows a big shift of the photoluminescence peak from 444 nm to 394 nm. The sample with the bottom photonic crystal structure also shows the lasing effect at the wavelength of 468 nm. Furthermore, the quality enhancement for the crystal growth of GaN thin film on the bottom photonic crystal comes from the modulated compressive stress which was measured by the micro-Raman spectroscopy.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2001.05a
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• pp.245-249
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• 2001

This paper is concerned with numerical analyses for bulk forming of a single crystal milli-product, whose typical size ranges from a few hundreds ${\mu}m$ to a few mm. The numerical formulation invoked in this paper combines the crystal plasticity theory considering texture development and the ductile damage mechanics for growth of micro voids, since orientation development and growth of micro voids become the primary factors for bulk forming of milli-size products. As applications, milli-extrusion of a single crystal round bar and milli-rolling of a single crystal plate are simulated and the results are discussed in detail.