• Tribology and Lubricants
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• v.13 no.3
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• pp.28-32
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• 1997

Indentation, scratch and sliding tests were carried out in this paper to predict the critical loads and the failure modes of TiN-coated specimen. The test specimens were S20C steels with three different substrate hardness, roughness and coating thickness. The scratch test shows that the coating thickness has more dominant effect on the critical load of coated disk than the hardness and the roughness. Using the percent contact load, the ratio of sliding load to the critical scratch load, the cycles to failure are measured to predict the wear-life of TiN film. On the wear-life diagram the percent loads and the cycle to failure show the good linear relation on semi-log coordinate. With decreasing loads, the diagram shows the wear-limit at which the coated disk survives more than 4000 cycles.

• Structural Engineering and Mechanics
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• v.87 no.1
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• pp.29-46
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• 2023

Critical thermal buckling of functionally graded porous (FGP) sandwich plates under various types of thermal loading is considered. It is assumed that the mechanical and thermal nonhomogeneous properties of FGP sandwich plate vary smoothly by distribution of power law across the thickness of sandwich plate. In this paper, porosity defects are modeled as stiffness reduction criteria and included in the rule of mixture. The thermal environments are considered as uniform, linear and nonlinear temperature rises. The critical buckling temperature response of FGM sandwich plates has been analyzed under various boundary conditions. By comparing several numerical examples with the reference solutions, the results indicate that the present analysis has good accuracy and rapid convergence. Further, the effects of various parameters like distribution shape of porosity, sandwich combinations, aspect ratio, thickness ratio, boundary conditions on critical buckling temperature of FGP sandwich plate have been studied in this paper.

• 한국초전도학회:학술대회논문집
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• v.14
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• pp.18-18
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• 2004

• Progress in Superconductivity and Cryogenics
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• v.6 no.3
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• pp.6-11
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• 2004

YBa$_2$Cu$_3$$O_{7-x}$ (YBCO) films were deposited on MgO(100) and SrTiO$_3$(100) single crystal substrates by cold-wall type MOCVD method using continuous source supplying system. Under the deposition temperature of 740∼76$0^{\circ}C$, c-axis oriented YBCO films were obtained. In case of the YBCO films deposited on MgO (100) single crystal substrate, the critical temperature (T$_{c}$) was under 81 K regardless of the deposition conditions, whereas T$_{c}$ of the YBCO films deposited on SrTiO$_3$(100) single crystal substrate was 83∼84 K. The critical current (I$_{c}$) of the YBCO film deposited on SrTiO$_3$(100) single crystal substrate for 30 min was 49 A/cm-width and the critical current density (J$_{c}$) was 0.82 MA/$\textrm{cm}^2$ to film thickness of 0.6 ${\mu}{\textrm}{m}$. I$_{c}$ increased to 84.4 A/cm-width as the deposition time increased to 50 min, but J$_{c}$ decreased to 0.53 MA/$\textrm{cm}^2$ to film thickness of 1.8 ${\mu}{\textrm}{m}$.rm}{m}$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.5
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• pp.467-476
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• 2006

We fabricated the YBCO films on LAO substrate using the TFA-MOD method and evaluated the effects of heat treatment temperature and film thickness on the microstructure, degree of texture, and critical properties. The calcining and firing were peformed at the temperature range of $370^{\circ}C-460^{\circ}C\;and\;750^{\circ}C-800^{\circ}C$, respectively. For the films fired at $775^{\circ}C$ after calcining at $400^{\circ}C-430^{\circ}C$showed highest critical temperature (Tc-onset) of 89.5 K and critical current (Ic) of 40A/cm-width which corresponds to critical current density (Jc) of $1.8MA/cm^2$. The highest critical properties are probably attributed to the formation of purer YBCO phase, stronger biaxial texture, and higher oxygen content, according to the XRD, pole-figure, SEM, Raman analysis. From the multi-coated films, the Ic increased from 39 to 169 A/cm-width as the coating repeated to four times, while the corresponding Jc was measured from once to be in the range of $0.8-1.2MA/cm^2$. Both Ic and Jc degraded as the coating repeated further, indicating that the optimum thickness is in the range of $1.0{\mu}m-1.7{\mu}m$.

• Journal of the Korean Geotechnical Society
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• v.22 no.8
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• pp.89-97
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• 2006

This study investigated the effect of relative density on the thickness of shear zone. Digital image processing was used to measure the thickness of shear zone under plane strain conditions. A suitable epoxy resin was injected into the sample and the thickness of the shear zone was investigated. Four independent condition samples were prepared and the thickness of the shear zone was measured. The results indicated that the thickness of shear zone increases as the initial density of sample increases, and during the shear, the void ratios of the shear zone were changed, but the thickness of shear zone was not changed. In addition, the result of measurement of the thickness showed that the thickness of shear zone was almost fixed before critical state, but beyond critical state, the thickness of shear zone sharply increases as relative density increases.

• International Journal of Highway Engineering
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• v.8 no.4 s.30
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• pp.13-24
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• 2006

The stresses in concrete pavement systems are larger when vehicle loads are applied at pavement edges, and these large stresses significantly affect the behavior and performance of pavements. Therefore, in this study, the stress distribution and the critical stresses in concrete pavements were investigated using a finite element model when dual-wheel single-, tandem-, and tridem-axle loads were applied at pavement edges. First, the stress distribution along the longitudinal and transverse directions was analyzed, and then the effects of slab thickness, concrete elastic modulus, and foundation stiffness on the stress distribution were investigated. The effect of the tire contact pressure related to the tire print area was also studied. The location of the critical stress occurrence in concrete pavements was finally investigated. From this study, it was found that the critical concrete stress due to edge loads became larger as the concrete elastic modulus increased, the slab thickness increased, and the foundation stiffness decreased. The effect of the tire contact pressure on the critical stress was clear as the slab thickness became smaller. The critical stress location in the transverse direction was independent of the concrete elastic modulus and the foundation stiffness; however, it moved into the interior as the slab thickness increased. The critical stress location in the longitudinal direction was under the axle for single- and tandem-axle loads, but for tridem-axle loads, it tended to move under the middle axle from the outer axles as the concrete elastic modulus and/or slab thickness increased and the foundation stiffness decreased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.181-184
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• 2001

Chemical Mechanical Polishing(CMP) of Shallow Trench Isolation(STD structure in 0.18 m semiconductor device fabrication is studied. CMP process is applied for the STI structure with and without reverse moat pattern and End Point Detection (EPD) method is tested. To optimize the transistor properties related metal 1 parameters. we studied the correlation between CMP thickness of STI using high selectivity slurry. DOE of gate etch recipe, and 1st metal DC values. Remaining thickness of STI CMP is proportional to the thickness of gate-etch process and this can affect to gate profile. As CMP thickness increased. the N-poly foot is deteriorated. and the P-Poly Noth is getting better. If CD (Critical Dimension) value is fixed at some point,, all IDSN/P values are in inverse proportional to CMP thickness by reason of so called Profile Effect. Weve found out this phenomenon in all around DOE conditions of Gate etch process and we also could understand that it would not have any correlation effects between VT and CMP thickness in the range of POE 120 sec conditions. As CMP thickness increased by $100\AA$. 3.2 $u\AA$ of IDSN is getting better in base 1 condition. In POE 50% condition. 1.7 $u\AA$ is improved. and 0.7 $u\AA$ is improved in step 2 condition. Wed like to set the control target of CD (critical dimension) in gate etch process which can affect Idsat, VT property versus STI topology decided by CMP thickness. We also would like to decide optimized thickness target of STI CMP throughout property comparison between conventional STI CMP with reverse moat process and newly introduced STI CMP using high selectivity slurry. And we studied the process conditions to reduce Gate Profile Skew of which source known as STI topology by evaluation of gate etch recipe versus STI CMP thickness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.181-184
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• 2001

Chemical Mechanical Polishing(CMP) of Shallow Trench Isolation(STI) structure in 0.18 m semiconductor device fabrication is studied. CMP process is applied for the STI structure with and without reverse moat pattern and End Point Detection (EPD) method is tested. To optimize the transistor properties related metal 1 parameters, we studied the correlation between CMP thickness of STI using high selectivity slurry, DOE of gate etch recipe, and 1st metal DC values. Remaining thickness of STI CMP is proportional to the thickness of gate-etch process and this can affect to gate profile. As CMP thickness increased, the N-poly foot is deteriorated, and the P-Poly Noth is getting better. If CD (Critical Dimension) value is fixed at some point, all IDSN/P values are in inverse proportional to CMP thickness by reason of so called Profile Effect. Weve found out this phenomenon in all around DOE conditions of Gate etch process and we also could understand that it would not have any correlation effects between VT and CMP thickness in the range of POE 120 sec conditions. As CMP thickness increased by 100 ${\AA}$, 3.2 u${\AA}$ of IDSN is getting better in base 1 condition. In POE 50% condition, 1.7 u${\AA}$ is improved, and 0.7 u${\AA}$ is improved in step 2 condition. Wed like to set the control target of CD (critical dimension) in gate etch process which can affect Idsat, VT property versus STI topology decided by CMP thickness. We also would like to decide optimized thickness target of STI CMP throughout property comparison between conventional STI CMP with reverse moat process and newly introduced STI CMP using high selectivity slurry. And we studied the process conditions to reduce Gate Profile Skew of which source known as STI topology by evaluation of gate etch recipe versus STI CMP thickness.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 1999.08a
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• pp.412-422
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• 1999

Scale defects generated on the strip surface in a tandem finishing mill line are collected from the strip trapped among the production mills by freezing the growing scale on the strip by the melt glass coating and shutting down the line simultaneously. The samples observed of its cross sectional figure showed the process of scale defect formation where the defects are formed at the base metal surface by thicker oxidized scale during each rolling passes. The properties of the oxidized layer growth both at rolling and inter-rolling are detected down sized rolling test simulating carefully the rolling condition of the production line. The thickness of the oxidized layer at each rolling pass are simulated numerically. The critical scale thickness to avoid the defect formation is determined through the expression of mutual relation between oxidized layer thickness and the lanks of the strip called quality for the scale defects. The scale growth of scale less than the critical thickness and also to keep the bulk temperature tuning the water flow rate and cooling time appropriately. Two units of Inerstand Cooler are designed and settled among the first three stands in the production line. Two units of scale defect is counted from the recoiled strip and the results showed distinct decrease of the defects comparing to the conventionaly rolled products.