• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.16-18
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• 2009

CIGS 박막태양전지는 박막태양전지 중 최고 효율(20%)을 보이는 태양전지로 각광받고 있다. 이러한 고효율 태양전지는 Soda-lime glass 를 기판으로 사용한 경우로 기판과 CIGS층의 열팽창계수가 비슷하고 또 나트륨이 CIGS 성장시 확산하여 광흡수층에 유익한 영향을 준다고 알려져 있다. 본 실험에서는 나트륨이 함유된 소다라임유리와 거의 포함하고 있지 않은 코닝유리를 기판으로 사용하여 CIGS 광흡수층의 차이를 분석하였다. SIMS, SEM분석결과 소다라임유리의 CIGS Mo 부근과 표면부위에 Na 농도가 높으며, grain 크기가 코닝에 비해 작음을 알 수 있었다. 전기적 특성은 소다라임유리기판의 경우 p-type 농도가 코닝유리기판에 비해 약 $10^5{\sim}10^6$천배가량 높음을 확인하였다. 셀특성또한 코닝 11%, SLG는 16%로 효율차이가 발생하였으며 이는 나트륨으로 p-type 전도도가 향상되어 효율이 개선되는 것으로 판단된다.

• Proceedings of the Korean Operations and Management Science Society Conference
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• 2000.04a
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• pp.695-699
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• 2000

The success of quality management is depend on will of TOP and flexibility in the field. Moreover, the level of standardization of the company is the important index for activation of quality management and establishment of $\boxDr$Prevention Manufacturing Systems$\boxUl$. Six sigma, which is highlighted recently, totally certify the paradigm shift from Management by AFTER to management by BEFORE and regard as a scientific, statistic expression of management activity for understanding customer's needs correctly. So in this paper I introduce the Samsung Corning quality management system and all. sorts of related systems for process improvement receiving positively change of

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.244-247
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• 1995

Physical, electrical and optical properties of Aluminum(Al) thin films were investigated in order to establish the optimum sputtering parameters in mirror reflection films. Al. thin films deposited on corning glass substrate by DC magnetron sputtering were grown as a variation of the input power, operation pressure and deposition time. The properties of the Al thin films have been discussed by deposition rate, SEM, XRD, sheet resistivity, resistivity and reflectance. Al thin films were obtained at the deposition conditions as follows: operating pressure, 3 mtorr; DC input power desnsitiy, 3W/$\textrm{cm}^2$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.1
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• pp.34-42
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• 2001

The influences of substrate temperature were studied when fabricating KLN thin film on amorphous substrate using an rf-magnetron sputtering method. Investigating the vaporization temperature of the each element, the excess ratio of target and the optimum deposition conditions were effectively selected when thin filmizing a material which have elements with large difference fo vaporization temperature. In order to compensate K and Li which have lower vaporization temperatures than Nb, KLN target of composition excess with K of 60% and Li of 30% was used. KLN thin film fabricated on Corning 1737 glass substrate had single KLN phase above 58$0^{\circ}C$ of substrate temperature and crystallized to c-axis direction. The optimum conditions were rf power of 100W, process pressure of 150mTorr, and substrate temperature of $600^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1991.10a
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• pp.12-16
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• 1991

Cadmium sulphide films with thickness of 0.6∼1.2$\mu\textrm{m}$ were deposited onto corning 7059 glass substrate under a vacuum of 5${\times}$10$\^$-6/ Torr. Source and substrate temperature ranges used were 800∼1100$^{\circ}C$ and 100∼200$^{\circ}C$, respectively. The microstructures and semiconducting properties of the films were studied using X-ray diffraction, UV-VIS-IR spectrophotometer and Hall measurement unit. Electrical resistivity and optical transmission of the CdS films decrease with an increase in source temperature while they increase with an increase in substrate temperature. The resistivity of the film evaporated at 1100$^{\circ}C$ varied from 7${\times}$10$^3$ohm-cm at the substrate temperature of 100$^{\circ}C$ to 2${\times}$10$\_$6/ohm-cm at 190$^{\circ}C$. All the films had hexagonal structure and strong texture with c-axis of grains normal to the substrate glass.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.89-93
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• 1995

Effects of hydrogenation in amorphous silicon rile growths on Solid Phase Crystallization (SPC) was investigated using x-ray diffractometry, energy dispersive Spectroscopy, and Raman spectrum. Interdiffusion of barium(Ba) and aluminum(Al) compounds of corning substrate was observed in both of rf sputtering and LFCVD films under the low temperature(580$^{\circ}C$) annealing. Low degree of crystallinity resulted from the interdiffusion was obtained. Highly applicable degree of crystallinity was obtained through the mechanical damage induced surface activation on amorphous silicon films. X-ray diffraction intensity of (111) orientation was used to characterize the degree of crystallinity of SPC. Nucleation and growth rate in SPC could be controllable through the employed surface treatment. IIydrogenated LPCVD films showed the superior crystallinity to non-hydrogenated sputtering films. Insignificant effects of activation treatment in sputtered film was of activation treatment in sputtered film was observed on SPC.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.91-92
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• 2006

Aluminum-doped zinc oxide (AZO) films are attractive materials as transparent conductive electrode because they are inexpensive, nontoxic and abundant element compared with indium tin oxide (ITO). AZO films have been deposited on glass (corning 1737) substrates by RF magnetron sputtering system. The electrical resistivity of AZO films was $1.81{\times}10^{-2}{\Omega}cm$ and the average transmittance in the visible range 400-800 nm was more than 76% Organic light-emitting diodes (OLEDs) with AZO/TPD/$Alq_3$/Al configuration were fabricated. The current density-voltage properties of devices were studied and compared with ITO devices fabricated under the same conditions.

• Journal of the Semiconductor & Display Technology
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• v.12 no.1
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• pp.41-45
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• 2013

IGZO transparent conductive thin films were widely used as transparent electrode of optoelectronic devices. We have studied the optical and electrical properties of IGZO thin films. The IGZO thin films were deposited on the corning 1737 glass by RF magnetron sputtering method. The RF power in sputtering process was varied as 25, 50, 75and 100 W, respectively. All of the thin films transmittance in the visible range was above 85%. XRD analysis showed that amorphous structure of the thin films without any peak. The thin films were electrically characterized by high mobility above $13.4cm^2/V{\cdot}s$, $7.0{\times}10^{19}cm^{-3}$ high carrier concentration and $6{\times}10^{-3}{\Omega}-cm$ low resistivity. By the studies we found that IGZO transparent thin film can be used as transparent electrodes in electronic devices.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.64.2-64.2
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• 2011

Recently, Silicon Germanium (SiGe) alloys have been received considerable attention for their great potentials in advanced electronic and optoelectronic devices. Especially, microcrystalline SiGe is a good channel material for thin film transistor due to its advantages such as narrow and variable band gap and process compatibility with Si based integrated circuits. In this work, microcrystalline silicon-germanium films (${\mu}c$-SiGe) were deposited by DC/RF magnetron co-sputtering method using Si and Ge target on Corning glass substrates. The film composition was controlled by changing DC and RF powers applied to each target. The substrate temperatures were changed from $100^{\circ}C$ to $450^{\circ}C$. The microstructure of the thin films was analyzed by x-ray diffraction (XRD) and Raman spectroscopy. The analysis results showed that the crystallinity of the films enhances with increasing Ge mole fraction. Also, crystallization temperature was reduced to $300^{\circ}C$ with $H_2$ dilution. Hall measurements indicated that the electrical properties were improved by Ge alloying.

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.39-40
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• 2006

Lithography and other patterning processes are powerful tools catalyzing many developments in science and engineering. The controlled formation of nanometer scale structures in 2 and 3 dimensions is therefore of increasing importance in many applications ranging from biotechnology to nanotechnology. This presentation will discuss new approaches for the construction of small-scale (a few tens of nm) structures using both 1- and 2-photon processes. Several approaches to fine feature lithography including the use of molecular glasses will be described. Such small scale structures can be used in a variety of biological applications including study of cell function and will be described.