• 한국광학회지
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• 제5권2호
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• pp.304-310
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• 1994

광섬유내에 첨가되어 있는 $GeO_{2}$등의 물질을 열확산시켜서 만드는 열확장코어 광섬유는 광섬유 복합소자에서 회절에 의한 솔실을 줄여주는 역할을 함으로써 시준과 집광을 위한 렌즈가 필요없게 된다. 광섬유의 열처리를 위하여 전기로를 제작하였으며 $1.3\mu\textrm{m}$ 단일 모드 광섬유를 $1250^{\circ}C$에서 10시간동안 열처리한 결과 모드 크기가 27% 확장되었음을 확인할 수 있었다.

• 반도체디스플레이기술학회지
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• 제19권4호
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• pp.94-98
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• 2020

The core/shell of nanowires (NWs) with Cu-doped CdSe quantum dots were fabricated as an electron transport layer (ETL) for perovskite solar cells, based on ZnO/TiO2 arrays. We presented CdSe with Cu2+ dopants that were synthesized by a colloidal process. An improvement of the recombination barrier, due to shell supplementation with Cu-doped CdSe quantum dots. The enhanced cell steady state was attributable to TiO2 with Cu-doped CdSe QD supplementation. The mechanism of the recombination and electron transport in the perovskite solar cells becoming the basis of ZnO/TiO2 arrays was investigated to represent the merit of core/shell as an electron transport layer in effective devices.

• ETRI Journal
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• 제26권4호
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• pp.371-374
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• 2004

We propose and demonstrate a fabrication method of chirped fiber gratings by a thermal diffusion process. The method could suggest a direction for a simple and cost-effective implementation of chirped fiber grating-based devices.

• Journal of the Optical Society of Korea
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• 제7권2호
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• pp.47-52
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• 2003

Effect of soaking temperature on erbium doping of the optical fiber core during solution doping procedure, especially in the modified chemical vapor deposition (MCVD) process, was investigated. The concentration of dopants such as $Er^{3+} and Al^{3+}$ in the preforms and the optical fibers measured by the electron probe microanalysis (EPMA) and the optical spectrum analyzer (OSA) was found to increase with decreasing the soaking temperature. The increase in the concentration of the $Er^{3+}$ is attributed to the precipitation of the erbium due to the decrease in the solubility as well as the increase of capillary force and viscosity of the doping solution by decreasing the temperature.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.289-289
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• 2013

While there are plenty of studies on synthesizing semiconducting germanium nanowires (Ge NWs) by vapor-liquid-solid (VLS) process, it is difficult to inject dopants into them with uniform dopants distribution due to vapor-solid (VS) deposition. In particular, as precursors and dopants such as germane ($GeH_4$), phosphine ($PH_3$) or diborane ($B_2H_6$) incorporate through sidewall of nanowire, it is hard to obtain the structural and electrical uniformity of Ge NWs. Moreover, the drastic tapered structure of Ge NWs is observed when it is synthesized at high temperature over $400^{\circ}C$ because of excessive VS deposition. In 2006, Emanuel Tutuc et al. demonstrated Ge NW pn junction using p-type shell as depleted layer. However, it could not be prevented from undesirable VS deposition and it still kept the tapered structures of Ge NWs as a result. Herein, we adopt $C_2H_2$ gas in order to passivate Ge NWs with carbon sheath, which makes the entire Ge NWs uniform at even higher temperature over $450^{\circ}C$. We can also synthesize non-tapered and uniformly doped Ge NWs, restricting incorporation of excess germanium on the surface. The Ge NWs with carbon sheath are grown via VLS process on a $Si/SiO_2$ substrate coated 2 nm Au film. Thin Au film is thermally evaporated on a $Si/SiO_2$ substrate. The NW is grown flowing $GeH_4$, HCl, $C_2H_2$ and PH3 for n-type, $B_2H_6$ for p-type at a total pressure of 15 Torr and temperatures of $480{\sim}500^{\circ}C$. Scanning electron microscopy (SEM) reveals clear surface of the Ge NWs synthesized at $500^{\circ}C$. Raman spectroscopy peaked at about ~300 $cm^{-1}$ indicates it is comprised of single crystalline germanium in the core of Ge NWs and it is proved to be covered by thin amorphous carbon by two peaks of 1330 $cm^{-1}$ (D-band) and 1590 $cm^{-1}$ (G-band). Furthermore, the electrical performances of Ge NWs doped with boron and phosphorus are measured by field effect transistor (FET) and they shows typical curves of p-type and n-type FET. It is expected to have general potentials for development of logic devices and solar cells using p-type and n-type Ge NWs with carbon sheath.

• Bulletin of the Korean Chemical Society
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• 제35권6호
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• pp.1670-1674
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• 2014

Two red emitters, 2-(7-(4-(diphenylamino)styryl)-2-methyl-4H-chromen-4-ylidene)malonitrile (Red 1) and 2-(7-(julolidylvinyl)-2-methyl-4H-chromen-4-ylidene)malonitrile (Red 2) have been designed and synthesized for application as red-light emitters in organic light emitting diodes (OLEDs). In these red emitters, the julolidine and triphenyl moieties were introduced to the emitting core as electron donors, and the chrome-derived electron accepting groups such as 2-methyl-(4H-chromen-4-ylidene)malononitrile were connected to electron donating moieties by vinyl groups. To explore the electroluminescence properties of these materials, multilayered OLEDs using red materials (Red 1 and Red 2) as dopants in $Alq_3$ host were fabricated. In particular, a device using Red 1 as the dopant material showed maximum luminous efficiencies and power efficiencies of 0.82 cd/A and 0.33 lm/W at $20mA/cm^2$. Also, a device using Red 2 as a dopant material presented the CIEx,y coordinates of (0.67, 0.32) at 7.0 V.