• Title/Summary/Keyword: controlled switching

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Analysis of Oscillation Modes in Discrete Power Systems Including GTO Controlled STATCOM by the RCF Method (GTO 제어 STATCOM을 포함하는 이산 전력시스템의 RCF 해석법에 의한 진동모드 해석)

  • Kim, Deok-Young
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.56 no.5
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    • pp.829-833
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    • 2007
  • In this paper, the RCF method is applied to analyze small signal stability of power systems including GTO controlled parallel FACTS equipments such as STATCOM. To apply the RCF method in power system small signal stability problems, state transition equations of generator, controllers and STATCOM are presented. In eigenvalue analysis of power systems, STATCOM is modelled as the equivalents voltage source model and the PWM switching circuit model. As a result of simulation, the RCF method is very powerful to calculate the oscillation modes exactly after the switching operations, and useful to analyze the small signal stability of power systems with periodically operated switching devices such as STATCOM.

Eigenvalue Analysis of Power Systems with GTO Controlled SSSC by the RCF Method (GTO 제어 SSSC가 설치된 계통의 RCF 해석법에 의한 고유치 해석)

  • Dong, Moo-Hwan;Kim, Deok-Young
    • Proceedings of the KIEE Conference
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    • 2006.07a
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    • pp.230-231
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    • 2006
  • In this paper, the RCF(Resistive Companion Form) analysis method is used to analyze small signal stability of power systems including GTO controlled FACTS equipment such as SSSC. To apply the RCF analysis method in power system small signal stability problems, state transition equations of power system equipments and power systems with SSSC are presented. In eigenvalue analysis of power systems by the RCF analysis method, SSSC is modelled into the equivalents voltage source model and PWM switching circuit model. As a result of simulation, the RCF method is very powerful to calculate the oscillation modes exactly after the switching operations, and useful to analyze the small signal stability of power systems with periodic switching device such as SSSC.

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Viewing Angle Switching of Vertical Alignment Liquid Crystal Display (수직배향 액정 디스플레이의 시야각 스위칭)

  • Lim, Young-Jin;Jeong, Eun;Choi, Min-Oh;Lee, Seung-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.49-50
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    • 2006
  • We have developed vertical alignment liquid crystal display (VA-LCD), of which the viewing angle can be controlled. The VA-LCD has the function of switching between the wide viewing mode and narrow viewing angle mode using one homogeneous aligned (HA) LC layer and one compensation film with a negative C-plate. The retardation of the HA layer at off axis can be controlled by applying an electric field while keeping the retardation value to be zero at normal direction. Consequently, the device exhibits a viewing mode over $170^{\circ}$ in terms of CR = 10 in wide viewing mode and about $60^{\circ}$ in terms of CR = 2 in narrow viewing angle mode m horizontal direction.

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A Study on the Operation Characteristics of a Reactive Power Copensator using PWM Converter (PWM 콘버어터를 이용한 순시무효전력 보상장치의 동작해석)

  • Kwon, Ki-Hyun;Kwon, Soon-Jae;Kim, Cheul-U;Whang, Yong-Moon
    • Proceedings of the KIEE Conference
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    • 1989.11a
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    • pp.310-312
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    • 1989
  • From the viewpoint of an effective energy use, many method for reactive power compensation has been developed. Among of the reactive power compensation, this paper describes the relation of operation interpretation, filter, hysteresis width and switching time of current controlled PWM converter which has excellent reactive power compensation. This current controlled PWM convertor is excellent the view of reactive power compensation by current control method using hysteresis comparator method, but is required element of high response characteristics. Therefore this paper offers the series of data for system considering switching characteristics of switching element.

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Fuzzy Controlled ZVS Asymmetrical PWM Full-bridge DC-DC Converter for Constant load High Power Applications

  • Marikkannan., A;Manikandan., B.V
    • Journal of Electrical Engineering and Technology
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    • v.12 no.3
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    • pp.1235-1244
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    • 2017
  • This paper proposes a fuzzy logic controlled new topology of high voltage gain zero voltage switching (ZVS) asymmetrical PWM full-bridge DC-DC boost converter for constant load and high power applications. The APWM full-bridge stage provides high voltage gain and soft-switching characteristics increase the efficiency and reduce the switching losses. Fuzzy logic controller (FLC) improves the performance and dynamic characteristics of the proposed converter. A comparison with a classical proportional-integral (PI) controller demonstrates the high performances of the proposed technique in terms of effective output voltage regulation under different operating conditions. Simulation is done by integrating two different simulation platforms $PSIM^{(R)}$ and $Matlab^{(R)}/Simulink^{(R)}$ by using SimCoupler tool of $PSIM^{(R)}$. Experimental results using 120W load have been provided to validate the results.

Quasi-Resonant PWM Converter Controlled by Constant Frequency (일정한 주파수로 제어되는 쿼지 공진형 PWM 컨버터)

  • Joung, Gyubum
    • Journal of Satellite, Information and Communications
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    • v.12 no.2
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    • pp.28-32
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    • 2017
  • In this paper, a quasi-resonant PWM converter, which is controlled by constant frequency, has been suggested. As quasi-resonant converter, the switches of the suggested converter has soft switching characteristics, which can operate to high frequency with high efficiency. Comparing with varied controlled frequency of quasi-resonant converter for controlling output voltage, the suggested converter has advantages which optimize filter and EMI filter design at constant switching frequency. The converter has been analyzed by switch mode analysis which verified soft switching operation. Also, the PWM operation and characteristics of the converter are verified by simulation and experiment of 100 kHz DC-DC converter.

Electrical Conduction and Resistance Switching Mechanisms of Ag/ZnO/Ti Structure

  • Nguyen, Trung Do;Pham, Kim Ngoc;Tran, Vinh Cao;TuanNguyen, Duy Anh;Phan, Bach Thang
    • Journal of IKEEE
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    • v.17 no.3
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    • pp.229-233
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    • 2013
  • We investigated electrical conduction and resistance switching behavior of the Ag/ZnO/Ti structures for random access memory devices. These films were prepared on glass substrate by dc sputtering technique at room temperature. The resistance switching follows unipolar switching mode with small switching voltages (0.4 V - 0.6 V). Two electrical conduction mechanisms dominating the LRS and HRS are Ohmic and trap-controlled space charge limited current, respectively. These both conductions are consistent with the filamentary model. Based on the filamentary model, the switching mechanism was also interpreted.

Fabrication and Characteristics of the Controlled Inversion Devices (제어 반전 소자의 제조 및 그 특성)

  • 김진섭;이우일
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.20 no.1
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    • pp.45-49
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    • 1983
  • The four-layered(metal/insulator/n epi-layer/p+) controlled inversion devices have been fabricated. The I-V curve showed two characteristic states―an On state and an OFF state which were separated by a negative resistance region. The switching voltage and the holding voltage were about 5.0V and 2.5V, respectively. The switching voltage of the device was decreased by photo illumination while the holding voltage remained unaffected.

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Characteristics of Anode Current due to the Impurity Concentration and the Channel Length of Lateral MOS-controlled Thyristor (수평 구조의 MOS-controlled Thyristor에서 채널 길이 및 불순물 농도에 의한 Anode 전류 특성)

  • Jeong, Tae-Woong;Oh, Jung-Keun;Lee, Kie-Young;Ju, Byeong-Kwon;Kim, Nam-Soo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.10
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    • pp.1034-1040
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    • 2004
  • The latch-up current and switching characteristics of MOS-Controlled Thyristor(MCT) are studied with variation of the channel length and impurity concentration. The proposed MCT power device has the lateral structure and P-epitaxial layer in substrate. Two dimensional MEDICI simulator is used to study the latch-up current and forward voltage-drop from the characteristics of I-V and the switching characteristics with variation of impurity concentration. The channel length and impurity concentration of the proposed MCT power device show the strong affect on the anode current and turn-off time. The increase of impurity concentration in P and N channels is found to give the increase of latch-up current and forward voltage-drop.

Resinant DC-DC Converter with Constant Switching frequency (스위칭 주파수가 일정한 공진형 DC-DC코버어터)

  • 이윤종;김희준;안태영;박효식
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.40 no.3
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    • pp.266-274
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    • 1991
  • This paper proposed the resonant DC-DC converter with constant switching frequency. Its output is controlled by the auxiliary switch which is attached in conventional MRC circuits. The average output voltage is equal to the average voltage of the auxiliary switch. If the on time of the auxiliary switch is short, output voltage is decreased. Because of using the multi resonant method, the power loss from the parasitic elements can be decreased. Experimental performance of DF ZVS Forward MRC topology with switching frequency of 1MHz is presented.