• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.96.2-96.2
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• 2010

The surface morphology and structural properties of polycrystalline silicon (poly-Si) films made in-situ aluminum induced crystallization at various substrate temperature (300~600) was investigated. Silicon films were deposited by hot-wire chemical vapor deposition (HWCVD), as the catalytic or pyrolytic decomposition of precursor gases SiH4 occurs only on the surface of the heated wire. Aluminum films were deposited by DC magnetron sputtering at room temperature. continuous poly-Si films were achieved at low temperature. from cross-section TEM analyses, It was confirmed that poly-Si above $450^{\circ}C$ was successfully grown on and poly-Si films had (111) preferred orientation. As substrate temperature increases, Si(111)/Si(220) ratio was decreased. The electrical properties of poly-Si film were investigated by Hall effect measurement. Poly-Si film was p-type by Al and resistivity and hall effect mobility was affected by substrate temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.253-253
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• 2009

Electrospinning is one of the simple, cost- efficient methods to produce long continuous semiconducting oxide nanofibers. Polyvinyl Alcohol (PVA) and zinc acetate were used. PVA/Zinc acetate aqueous solutions were electrospun into nonwoven webs. CCD camera, with a lens of long working distance and digital video board were used in capturing the drop and web deposition. The diameter and morphology of nanofibers were analyzed with a Field-emission scanning electron microscopy (FE-SEM). In this study, the average diameter and morphology of nanofibers have been explorered.

• 한국전기전자재료학회논문지
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• 제27권7호
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• pp.417-427
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• 2014

Renewable energy sources such as solar, wind and hydro provides utilizing renewable power and reduce the using fossil fuels. On the other hand, it is too critical to apply power system due to the intermittent nature of renewable energy sources, the continuous fluctuations of the power load, and the storage with high energy density. Energy storage system, including pumped-hydroelectric energy storage, compressed-air energy storage, superconducting magnetic energy storage, and electrochemical devices like batteries, supercapacitors and others have shown that solve some of the challenges. In this paper, we review the current state of applications of energy storage systems, and atomic layer deposition technology, graphene materials on the energy storage systems and processes.

• 한국대기환경학회지
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• 제10권3호
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• pp.159-169
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• 1994

This paper describes the process of acidic precipitation from the atmosphere to the ground water, The net deposition of wet precipitation to the ground surface is obtained by subtracting the interception loss due to plant leaves and evaporation from the amount of total precipitation. As the water immerses through the vegetation and the different soil layers the various chemical reactions take place. The relationship between the acidic precipitation by increasing industrial emissions and the soil acidification mechanism is discussed. The report focuses on the buffering action that involves the proton budget in soil and rocks. Based on the soil constituents, the six buffer ranges of the soil are classified and each buffering process is illustrated. In addition, the Possibility of the contamination of drinking-water reservoirs by continuous acid burden is emphasized.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.636-639
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• 2001

InGaN/GaN multiple quantum wells (MQWs) grown with various growth interruptions between the InGaN well and GaN barrier by metal-organic chemical vapor deposition were investigated using photoluminescence, high-resolution transmission electron microscopy, and energy filtered transmission electron microscopy (EFTEM). The luminescence intensity of the MQWs with growth interruptions is abruptly reduced compared to that of the MQW without growth interruption. Also, as the interruption time increases the peak emission shows a continuous blue shift. Evidence of indium clustering is directly observed both by using an indium ratio map of the MQWs and from indium composition measurements along an InGaN well using EFTEM. The higher intensity and lower energy emission of light from the MQW grown without interruption showing indium clustering is believed to be caused by the recombination of excitons localized in indium clustering regions and the increased indium composition in these recombination centers.

• 한국막학회:학술대회논문집
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• 한국막학회 2002년도 춘계 총회 및 학술발표회
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• pp.35-41
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• 2002

Dense oxygen ionic conducting materials can be used for oxygen separation membranes at high temperatures. However, they show relatively low permeation flux because of their large resistances. To reduce resistances and improve the oxygen permeation flux, thin dense yttria-stabilized-zirconia (YSZ)/Pd composite dual-phase membranes were fabricated by a new approach that combines the reservoir method and chemical vapor deposition (CVD). A thin porous YSZ layer was coated on a porous alumina support by dip-coating the YSZ suspension. A continuous Pd phase was formed inside pores of the YSZ layer by the reservoir method. The residual pores of the YSZ/Pd layer were plugged with yttria/zirconia by CVD to ensure the gas tightness of the membranes. The oxygen permeation fluxes through these composite membrane were 2.0$\times$10$^{-8}$ mol/cm$^2$.s and 4.8$\times$10$^{-8}$ mol/cm$^2$.s at 105$0^{\circ}C$ when air and oxygen were used as the permeate gases, respectively. These oxygen permeation values are about 1 order of magnitude higher than those of pure YSZ membranes prepared under similar conditions.

• 전자공학회논문지A
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• 제31A권12호
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• pp.115-121
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• 1994

Aluminum films were chemically vapor deposited for the metallization of the integrated circuits and the spiking characteristics of the direct CVD Al/Si contacts were investigated. When the aluminum was formed by CVD uniform consumption of the substrate silicon was observed, which is quite different from the phenomena observed in sprttered Al. Silicon consumption occured during the deposition of CVD Al and the erosion depth of the silicon was several hundred $\AA$ when the continuous films were formed on the substrate while much less erosion of the silicon occured when the Al were formed in islands. When the submicron contacts were selectively plugged, contact resistances were very low and the erosion depth of the silicon was trivial.

• 대한소아치과학회지
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• 제5권1호
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• pp.47-63
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• 1978

The author studied on the Simplified Oral Hygiene Index in the handicapped children, who are housed by several rehabilitation institution age from 3 to 17 year in Seoul area and 439 normal children as a control group. The obtained results are as follows: 1) In the Oral Hygiene Index(OHI), The handicapped children showed remarkable increment compared to normal children(The Index score was 2.00 in cerebral palsy children, 1.94 in poliomyelitis, 1.79 in other's diseased children, in 1.01 in normal children) and the score was increased as age increment. 2) In the OHI of the handicapped children, male was higher than female. 3) Dental calculus deposition in the handicapped children was severe in the lower anterior teeth and least in the upper anterior teeth. 4) Dental calculus Index of the handicapped children was comparatively higher in the region which had higher food debris index. 5) As the conculusion of this study, we found that continuous and active dental enlightenment and treatment for oral health in the handicapped children are necessary.

• Applied Science and Convergence Technology
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• 제26권5호
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• pp.129-132
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• 2017

We report a chemical vapor deposition approach and optimized growth condition to the synthesis of single layer molybdenum disulfide ($MoS_2$). Obtaining large grain size with continuous $MoS_2$ atomically thin films is highly responsible to the growth distance between molybdenum trioxide source and receiving silicon substrate. Experimental results indicate that triangular shape $MoS_2$ grain size could be enlarged up to > 80um with the precisely controlled the source-to-substrate distance under 7.5 mm. Furthermore, we demonstrate fabrication of a memory device by employing poly(methyl methacrylate) (PMMA) as insulating layer. The fabricated devices have a PMMA-$MoS_2$/metal configuration and exhibit a bistable resistance switching behavior with high/low-current ratio around $10^3$.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.770-772
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• 2002

A new dry-processing method of organic gate dielectric film in field-effect transistors (FETs) was proposed. The method use vapor deposition polymerization (VDP) that is continuous and low temperature process. It has the advantages of shadow mask patterning and dry processing in flexible low-cost large area applications. Here, 80 nm-thick Al as a gate electrode was evaporated through shadow mask. Gate insulators used two different polyimides. The one material was 4,4'-oxydiphtahlic anhydride (ODPA) and 4,4'-oxydianiline (ODA). Another was 2,2-bis(3,4-dicarboxyphenyl) Hexafluoropropane Dianhydride (6FDA) and 4,4' -oxydianiline (ODA). These were co-deposited by high-vaccum thermal-evapora and cured at 150 $^{\circ}C$ for 1 hour, respectively. Pentacene as a semiconductor and 100 nm-thick Au as a source and drain electrode were evaporated through shadow mask.