• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 추계학술대회 논문집 전문대학교육위원 P
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• pp.31-34
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• 1999

In the present study, we fabricated stoichiometric $(Ba_{1-x}Sr_x)TiO_3$ thin films at various substrate temperature and contents using of magnetron sputtering method on optimized Pt-based electrodes (Pt/TiN/$SiO_2$/Si). The substate temperature deposited at 200[ $^{\circ}C$], 400[$^{\circ}C$] and 600[$^{\circ}C$] and crystalline BST thin films show above 400[$^{\circ}C$]. Also, the composition of $(Ba_{1-x}Sr_x)TiO_3$ thin films deposited on Si wafer substrate at 400[$^{\circ}C$] were closed to stoichiometry($1.015{\sim}1.093$ in A/B ratio), but compositional deviation from a stoichiometry is larger as $SrCO_3$ is added. The drastic decrease of dielectric constant and increase of dielectric loss in $(Ba_{1-x}Sr_x)TiO_3$thin films is observed above 100[kHz]. V-I characteristics of $(Ba_{1-x}Sr_x)TiO_3$ thin films show the decrease of leakage current with the increase of $SrCO_3$ contents.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.165-166
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• 2008

$(Ba_{0.6},Sr_{0.3},Ca_{0.1})TiO_3$ powders, which were prepared by sol-gel method using a solution of Ba-acetate, Sr-acetate and Ca-acetate and Ti iso-propoxide, were mixed with organic vehicle and the BSCT thick films were fabricated by the screen-printing techniques on high purity alumina substrates. The structural and dielectirc properties were investigated for various $Pr_2O_3$ and $Y_2O_3$doping contents. As a result of thermal analysis of $(Ba_{0.6},Sr_{0.3},Ca_{0.1})TiO_3$ powders, the exothermic peak was observed at around $670^{\circ}C$ due to the formation of the polycrystalline perovskite phase. All BSCT thick films, sintered at $1420^{\circ}C$ for 2h, showed the typical XRD patterns of perovskite polycrystalline structure. The average grain size of the specimens decreased with amount of $Pr_2O_3$ and $Y_2O_3$ contents.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권2호
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• pp.80-84
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• 2003

The mechanical and electrical properties of the hot-pressed and pressureless annealed SiC-Ti $B_2$electroconductive ceramic composites were investigated as functions of the liquid additives of $Al_2$ $O_3$+ $Y_2$ $O_3$. The result of phase analysis for the SiC-Ti $B_2$ composites by XRD revealed $\alpha$-SiC(6H), Ti $B_2$, and YAG(A $l_{5}$ $Y_3$ $O_{12}$ ) crystal phase. The relative density of SiC-Ti $B_2$ composites was increased with increased $Al_2$ $O_3$+ $Y_2$ $O_3$ contents. The fracture toughness showed the highest value of 6.04 Mpa $m^{\frac{1}{2}}$ for composites added with l2wt% A1$_2$ $O_3$+ $Y_2$ $O_3$ additives at room temperature. The electrical resistivity showed the lowest value of 6.2$\times$10$^{-3}$ $\Omega$ㆍcm for composite added with l6wt% $Al_2$ $O_3$+ $Y_2$ $O_3$ additives at room temperature. The electrical resistivity of the SiC-Ti $B_2$ composites was all positive temperature cofficient resistance(PTCR) in the temperature ranges from $25^{\circ}C$ to $700^{\circ}C$.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권10호
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• pp.500-503
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• 2001

The mechanical and electrical properties of the hot-pressed and pressureless annealed SiC+39vol.%$TiB_2$electroconductive ceramic composites were investigated as a function of the liquid additives of $Al_2O_3+Y_2O_3$. The result of phase analysis for the SiC+39vol.%$TiB_2$composites by XRD revealed $\alpha$-SiC(6H), $TiB_2$, and $YAG(Al_5Y_3O_{12})4 crystal phase. The relative density of SiC+39vol.%$TiB_2$ composites was increased with increased $Al_2O_3+Y_2O_3$. contents. The fracture toughness showed the highest value of $7.8 MPa.m^{1/2}$ for composites added with 12 wt % $Al_2O_3+Y_2O_3$. additives at room temperature. The electrical resistivity and the resistance temperature coefficient showed the lowest value of $7.3\times10_{-4}\Omega.cm\; and\; 3.8\times10_{-3}/^{\circ}C$ for composite added with 12 wt% $Al_2O_3+Y_2O_3$. additives at room temperature. The electrical resistivity of the SiC+39vol.%$TiB_2$composites was all positive temperature coefficient resistance(PTCR) in the temperature ranges from $25^{\circ}C\; to\; 700^{\circ}C$.

• 마이크로전자및패키징학회지
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• 제12권2호
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• pp.161-166
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• 2005

Fresnoite($Ba_2TiSi_2O_8$)결정을 갖는 $xK_2O-(33.3-x)BaO-16.7TiO_2-50SiO_2(mole\%)$ 유리조성에서 BaO를 $K_2O$로 대체함에 따른 유리화, 열적특성 및 결정화 거풍에 관하여 관찰하였다. x(0$\le$x$\le$20)의 함량이 증가함에 따라 유리화가 용이하였으며, 유리 전이온도 및 결정화 온도가 저온부로 이동하였다. $Ba_2TiSi_2O_8$결정상의 생성을 XRD분석을 통하여 확인하였으며, x의 함량증가가 이질상의 생성과는 무관함을 보였다. 결정화 거동을 DTA를 이용한 비등온법에 의하여 조사하였으며, x의 함량증가에 따라 avrami 지수(n)가 $2.26 {\pm}0.1,\;2.03 {\pm}0.1,\;1.93{\pm}0.15$로, 활성화 에너지는 약 $279 {\pm}12kJ/mole,\;302{\pm}7kJ/ mole,\;319{\pm}1kJ/mole$ 로 변화하였으며, SEM분석결과 x의 함량 증가 시 결정의 방향성이 두드러짐이 관찰되었다.

• 한국재료학회지
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• 제3권5호
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• pp.553-561
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• 1993

본 연구에서는 입계의 성질을 이용한 PTCR 재료에 입계 modifier로서 $Bi_2O_3$를 첨가하고 입계의 미세구조와 결함농도를 변화시켜 이에 따른 소결 및 전기적 특성변화를 TMA, XRD, 복합 임피던스방법 등을 이용하여 해석하였다. 실험 결과 Y이 도우핑된 $BaTiO_3$PTCR 재료에 $Bi_2O_3$를 첨가하였을때 약 0.1mol%까지 고용이 되는 것으로 밝혀졌다. $Bi_2O_3$를 고용한계 이하로 첨가시에는 생성되는 vacancy등의 결함으로 말미암아 $Y-BaTiO_3$의 치밀화가 촉진되었으나, 그 이상 첨가하면 치밀화 뿐만 아니라 결정립 성장도 억제되었다. $Bi_2O_3$의 첨가량에 따라 계내에 존재하는 각 이온의 반경, 결함 반응식 및 격자 탄성 변형 에너지 등을 고려하면 $Y-BaTiO_3$결정립 내부에 Ba와 Ti vacancy가 동시에 생길 수 있어 고온저항이 높아짐을 알 수 있었다. BN은 $BaTiO_3$에 고용이 되지 않는 것으로 밝혀졌으며 $B_2O_3$를 주성분으로한 액상형성으로 인하여 저온에서의 급격한 치밀화가 관찰되었다. 또 Ba-Y-Ti-B-O의 비정질 상이 tripie junction에 존재함으로써 상온저항이 크게 변화하였으며, PTCR jump도 높아졌다.

• E2M - 전기 전자와 첨단 소재
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• 제9권2호
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• pp.132-137
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• 1996

Pb(Zr$_{x}$Ti$_{1-x}$ )O$_{3}$ solutions prepared by sol-gel processing with different Zr/Ti ratio were coated on Pt/SiO$_{2}$/Si substrates using spin coating method. Coated films were annealed by rapid thermal annealing at 650.deg. C for 20sec to fabricate Pb(Zr, Ti)O$_{3}$ ferroelectric thin films. Electrical properties of the films such as dielectric constant and loss, ferroelectric hysteresis, fatigue, switching time, and leakage current were measured. Hysteresis of the films with different Zr/Ti ratio yield Pr ranging 10-21.mu.C/cm$^{2}$, E$_{c}$ ranging 37.5-137.5kV/cm. Hysteresis curve was changed from square-type to slim type according to increasing Zr contents. Switching time was faster than 180ns, and leakage current was about 20.mu.A/cm$^{2}$. The film underwent above 10$^{8}$ cycles of reversed polarization showed fatigue with increased coercive field and decreased remnant polarization.tion.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
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• pp.955-956
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• 2006

Fe-doped $TiO_2$ nanopowders were prepared by mechanical alloying (MA) varying Fe contents up to 8.0 wt.%. The UV-vis absorption showed that the UV absorption for the Fe-doped powder shifted to a longer wavelength (red shift). The absorption threshold depends on the concentration of nano-size Fe dopant. As the Fe concentration increased up to 4 wt.%, the UV-vis absorption and the magnetization were increased. The benefical effect of Fe doping for photocatalysis and ferromagnetism had the critical dopant concentration of 4 wt.%. Based on the UV absorption and magnetization, the dopant level is localized to the valence band of $TiO_2$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.597-600
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• 2002

Electrical properties of $\{(Sr_xCa_{1-x})_{0.95-y-z}Bi_2Pb_{0.05+y}\})Ti_{1.02}O_3$ ceramic were studied as a function of Sr/Ca ratio and Bi, Pb contents. Dielectric properties of specimens with different x, y, z values were explained in terms of ionic polarizability with Molecular Additionally Rules and Clausius-Mosotti equation. For the composition of $\{(Sr_{0.62}Ca_{0.38})_{0.90}Bi_{0.01}Pb_{0.09}\})Ti_{1.02}O_3$ and $\{(Sr_{0.62}Ca_{0.38})_{0.905}Bi_{0.015}Pb_{0.08}\})Ti_{1.02}O_3$, dielectric constant$({\varepsilon}_r)$, quality factor(Q) and temperature coefficient(TC) were 389, 3048, -1490 and 394, 1869, -1340 at 1MHz, respectively.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권7호
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• pp.394-399
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• 2000

The mechanical and electrical properties of pressed and annealed $\beta-SiC-TiB_2$ electroconductive ceramic composites were investigated as a function of the liquid forming additives of $Al_2O_3+Y_2O_3$. Phase analysis of composites by XRD revealed $\alpha$-SiC(6H), TiB2, and (Al5Y3O12). Reaction between Al2O3 and $Y_2O_3$ formed YAG but the relative density decreased with increasing $Al_2O_3+Y_2O_3$ contents. The Flexural strength showed the value of 458.9 MPa for composites added with 4 wt% $Al_2O_3+Y_2O_3$ additives at room temperatures. Owing to crack deflection and crack bridging, the fracture toughness showed 6.2, 6.0 and 6.6 MPa.m1/2 for composites added with 4, 8 and 12 wt% Al2O3+Y2O3 additives respectively at room temperature. The resistance temperature coefficient showed the value of $3.6\times10^{-3},\; 2.9\times10^{-3}\; and\; 3.0\times10^{-3} /^{\circ}C$$^{\circ}C$ for composite added with 4, 8 and 12 wt% $Al_2O_3+Y_2O_3$additives respectively at room temperature. The electrical resistivity of the composites was all positive temperature coefficient resistance(PTCR) in the temperature range of $25^{\circ}C\; to\; 700^{\circ}$.