• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1352-1355
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• 2004

We have applied front contact metallization of plated nickel and copper for high efficiency passivated emitter rear contact(PERC) solar cell. Ni is shown to be a suitable barrier to Cu diffusion as well as desirable contact metal to silicon. The plating technique is a preferred method for commercial solar cell fabrication because it is a room temperature process with high growth rates and good morphology. In this system, the electroless plated Ni is utilized as the contact to silicon and the plated Cu serves as the primary conductor layer instead of traditional solution that are based on Ti/Pd/Ag contact system. Experimental results are shown for over 20 % PERC cells with the Plated Ni/Cu contact system for good performance at low cost.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.1030-1035
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• 2003

The nanoimprint lithography technology makes higher density of semiconductor device and larger capacity of storage media. In this technology the induced damage while detaching polymer pattern from mold should be minimized. In order to analyze the problem, the basic knowledge of adhesion between the polymer and the mold is required. In this study a contact experiment of polyisobutylene specimen with spherical steel tip and polyisobutylene bead tip was conducted using nano indenter. During the contact experiment with various loading rate under load control the contact behavior of viscoelastic material was measured, i.e., the load and displacement between the tip and the specimen were measured. The data was analyzed by HBK model to obtain the stress intensity factor of contact edge and the contact radius as a function of time. Also the adhesion energies between steel/polyisobutylene and polyisobutylene/polyisobutylene were obtained employing the analysis of the crack of viscoelastic material by Schapery.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.133-136
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• 2004

In this study, the characteristics of 3C-SiC ohmic contact were investigated. Titanium-tungsten(TiW) films were used for contact metalization. The ohmic contact resistivity between 3C-SiC and TiW was measured by HP4155 and then calculated with the circular transmission line method(C-TLM). And also the physical properties of TiW and the interface between TiW and 3C-SiC were analyzed using XRD and AES. TiW films make a good role of a diffusion barrier and their contact properties with 3C-SiC are stable at high temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.2
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• pp.115-119
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• 2015

The power relay can be easily controlled with high voltage and current through the contacts. For this reason, has become widely used range in a variety of applications. In this study, we measured the contact resistance between the bouncing phenomenon of contact due to the change of load. The results of the experiment, the contact resistance increases with the deterioration of the contact, it is possible to predict the life of the relay contacts through the contact resistance. And relay bounce duration time have occurred in 3.5 ms or less. In addition, it is possible to use the results to design an arc suppression circuit device.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2000.11a
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• pp.44-49
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• 2000

Recently, PM-high speed steel(PM-HSS) has reportedly been a good alternative material for rolling mill because of its superior peformance to conventional HSS. This paper has been aimed to investigate the possibility for application to rolling contact element for PM-HSS by X-ray diffraction technique. The X-ray elastic constant for PM-HSS has been found by X-ray diffraction during the four-point bending test. Residual stress and half-value breadth on the contact surface during rolling contact fatigue process by X-ray diffraction have also been measured. The result of this study shows that the application of X-ray diffraction technique to PM-HSS could be as possible alternative material as conventional HSS. Half-value breadth on rolling contact surface by X-ray diffraction is not changed during rolling contact fatigue process. On the other hand, the residual stress is changed. This suggests that dislocation reaction has been hardly occurred in rolling contact, depending on supersaturated carbon in PM-HSS.

• Structural Engineering and Mechanics
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• v.91 no.5
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• pp.459-468
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• 2024

This study presents a frictionless receding contact problem for an orthotropic elastic layer. It is assumed that the layer is supported by two rigid quarter planes and the material of the layer is orthotropic. The layer of thickness h is indented by a rigid cylindrical punch of radius R. The problem is modeled by using the singular integral equation method with the help of the Fourier transform technique. Applying the boundary conditions of the problem the system of singular integral equations is obtained. In this system, the unknowns are the contact stresses and contact widths under the punch and between the layer and rigid quarter planes. The Gauss-Chebyshev integration method is applied to the obtained system of singular integral equations of Cauchy type. Five different orthotropic materials are considered during the analysis. Numerical results are presented to interpret the effect of the material property and the other parameters on the contact stress and the contact width.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.109-109
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• 2006

Screen printing (SP) metal contact is typically applied to the solar cells for mass production. However, SP metal contact has low aspect ratio, low accuracy, hard control of the substrate penetration and unclean process. On the other hand, photo lithograpy (PL) metal contact can reduce defects by metal contact. In this investigation, PL metal contact was obtained the multi-layer structure of Ti/Pd/Ag by e-beam process. We applied SP metal contact and PL metal contact to single crystalline silicon solar cells, and demonstrated the difference of conversion efficiency. Because PL metal contact silicon solar cell has Jsc (short circuit current density) better than silicon solar cell applied SP metal contact.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.1315-1321
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• 2005

Using hyper-elastic material has been increased gradually and its range was extended all over the industrial. In addition, the performance prediction of this material was required not only experimental methods like metal material but also numerical methods. In this study, we presented the process how to use numerical method for hyper-elastic material and then, it was applied for seat-ring of butterfly valve by using this process. The finite element analysis was executed to evaluate the mechanical characteristics of hyper-elastic material and search the optimum model considered conditions and features. According to that model the coefficient was obtained by using Contact analysis.

• Journal of Korea Foundry Society
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• v.26 no.2
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• pp.92-97
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• 2006

Contact material is widely used as electrical parts. Ag-Cd alloy has a good wear resistance and stable contact resistance. But the disadvantages of Ag-Cd alloy are coarse Cd oxides and harmful metal, Cd. To solve the disadvantages of that, Ag-Sn alloy that has stable and fine Sn oxide at high temperature has been developed. In order to optimize Sn amount that affects the formation of the oxide layer on the surface, we worked for the microstructures and properties of Ag-Sn material fabricated by rapid solidification process. The experimental procedure were melting using high frequency induction, melt spinning, and internal oxidation. We have shown that the optimized Sn amount for high hardness is 7.09 wt%Sn. Surface oxide layer forms when Sn amount is over 9.45 wt%. The size of Sn oxide is 20 nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.208-209
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• 2008

Ni/Ti/Al multilayer system was tested for low-resistance ohmic contact formation to Al-implanted p-type 4H-SiC. Compared with conventional process using Ni, Ni/Ti/Al contact shows perfect ohmic behavior, and possesses much lower contact resistance of about $2.5\times10^{-4}\Omega{\cdot}cm^2$ after $930^{\circ}C$ RTA, which is about 2 orders of magnitude smaller than that of Ni contact. Contact resistance gradually increased as the RTA temperature was lowered in the range of 840 ~ $930^{\circ}C$, and about $3.4\times10^{-4}\Omega{\cdot}cm^2$ was obtained at the lowest RTA temperature of $840^{\circ}C$. Therefore, it was shown that RTA temperature for ohmic contact formation can be lowered to at least $840^{\circ}C$ without significant compromise of contact resistance.