• Proceedings of the KIEE Conference
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• 2004.07e
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• pp.134-136
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• 2004

The results of investigations of $Ag_2Te$ crystal is presented. $Ag_2Te$ crystal was grown by the Bridgman method. The $Ag_2Te$ crystal was an monoclinic structure with lattice constance a = 8.1686 A, b = 9.0425 ${{\AA}}$, c = 8.0065 ${{\AA}}$. Hall effect shows a n-type conductivity in the $Ag_2Te$ crystal. The electrical resistivity values was $1.080e^{-3}{\Omega}cm$ and electron mobility was $-5.48{\times}10^3cm^2/V{\cdot}sec$ at room temperature(RT).

• Transactions of the Korean Society of Mechanical Engineers A
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• v.30 no.8 s.251
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• pp.949-956
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• 2006

The method of Greenwood and Williamson is extended to obtain a solution to the coupled non-linear problem of steady-state electrical and thermal conduction across a crack in a conductive layer, for which the electrical resistivity and thermal conductivity are functions of temperature. The problem can be decomposed into the solution of a pair of non-linear algebraic equations involving boundary values and material properties. The new mixed-boundary value problem given from the thermal and electrical boundary conditions for the crack in the conductive layer is reduced in order to solve a singular integral equation of the first kind, the solution of which can be expressed in terms of the product of a series of the Chebyshev polynomials and their weight function. The non-existence of the solution for an infinite conductor in electrical and thermal conduction is shown. Numerical results are given showing the temperature field around the crack.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.3
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• pp.277-283
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• 2009

In this paper, aluminum doped zinc oxide (ZnO:Al) thin films on plastic substrate such as poly carbonate (PC), polyethylene terephthalate (PET) were prepared by RF magnetron sputtering method for flexible solar cell applications. Effects of the sputter pressure on the structural, electrical and optical properties were investigated. The crystallinity and the degree of the (002) orientation were deteriorated with increasing the sputter pressure. When the sputter pressure was higher, the conductivity of ZnO:Al films was improved because of the high carrier concentration and the Hall mobility. High quality ZnO:Al films with resistivity as low as $1.9{\times}10^{-3}{\Omega}-cm$ and the optical transmittance over 80 % in the visible region have been obtained on PC substrate at 2 mTorr.

• Transactions of Materials Processing
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• v.18 no.6
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• pp.476-481
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• 2009

The present work demonstrates the mechanical and electrical responses of submicrocrystalline Cu-3%Ag alloy as a function of strain imposed by equal channel angular pressing(ECAP). From transmission electron microscope observation, the resulting microstructures of Cu-3%Ag alloy deformed by ECAP for 8-pass or more consist of reasonably fine, equiaxed grains without having a strong preferred orientation, suggesting that microstructure evolution is slower than that of pure-Al and its alloys owing to low stacking fault energy. The results of room temperature tension tests reveal that, as the amount of applied strain increases, the tensile strength of submicrocrystalline Cu-3%Ag alloy increases whereas losing both the ductility and the electrical conductivity. Such phenomenon can be explained based on microstructure featured by the non-equilibrium grain boundaries.

• Journal of Powder Materials
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• v.7 no.1
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• pp.6-11
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• 2000

Two kinds of Bi2Te3 powders, pure Bi2Te3/2vol.%ZrO2, have been prepared by a mechanical grinding process process. Effect of mixing of the powders on thermoelectric of the sintered body has been investigated by measuring Seebeck Coeffcient, specific electric resistivity and thermal conductivity. With an increase in the weight fraction of the Bi2Te3/2vol.%ZrO2 powder from 0 to 40wt.%. Especially, the figure of merit of the mixedBi2Te3 sintered body increases and thereafter dedreases above 40wt.%. Especially. the figure of merit of the mixed Bi2Te3 sintered bodies with mixing of Bi2Te3/2vol.%ZrO2 powder increased about 1.3time in comparison with the value of the specimen before mixing. Mixing of two kinds of Bi2Te3 powders which have different theramal and electric propertries with each other seemed to be useful methob to increase the figure of merit of Bi2Te3 sintered body.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.79-81
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• 1996

We fabricated SrTiO$_3$thin film capacitor on the Ag/Si-wafer by RF sputtering deposition. And I-V characteristics and structual analysis of the thin film capacitor are investigated. We found that the leakage current of the films during deposition is strongly denpent on the ambient gas and substrate temperature. Because of increase of activation energy, leakage current increased at high temperature and resistivity of the films was decreased. According to the increase of oxygen gas flow rate, the conductivity of thin film capacitor was increased and leakage current was decreased.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.9
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• pp.1060-1067
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• 1988

In this paper, we have investigated the effects of rapid thermal process on the electrical and structural properties of silicon films. It was shown that required times and temperature for the successful activation of dopants (Boron, Phosphorus:5E15atoms/cm\ulcorner were above 1000\ulcorner, 10sec, respectively. The typical resistivities of films deposited below 600\ulcorner were in the range of 1.0 E-3ohm-cm which was 20-30% lower than that of initially polycrystalline silicon depositd above 600\ulcorner. After rapid thermal process at high temperature above 1000\ulcorner, the films did not reveal any change in resistivity due to the dopant segregation, and better electrical conductivity could be obtained by increasing the process time. The grain growth by RTA treatment was more salient in the case of the doped amorphous than that of initially polycrystalline. The surface of the films also preserved the higher structural perfection and surface smoothness.

• Journal of the Korean Chemical Society
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• v.13 no.4
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• pp.395-399
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• 1969

On the soft carbon made from petroleum coke, it was found that the graphitization began at around 2,000$^{\circ}C and crystallite diameters were almost saturated at 2,400$^{\circ}C., and that the molecular planes were difficult to arrange into an ideal graphite lattice in spite of the saturation of crystallinity by heat treatment temperature. On the hard carbon made from cross-linked thermosetting plastics, phenol-formaldehyde filler and phenol-benzaldehyde binder, it was very difficult to rotate the molecular planes into a regular directional arrangement and into a consecutive order corresponding to the large graphite crystals. In addition to the above mentioned crystallinity, it was also determined in relation to electric conductivity, resistivity, hardness and apparent density of carbons.

• International Journal of Air-Conditioning and Refrigeration
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• v.13 no.1
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• pp.44-50
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• 2005

In the present study, the characteristics of upward bubble flow were experimentally investigated in a liquid bath. An electro-conductivity probe was used to measure local volume fraction and bubble frequency. Since the gas was concentrated at the near the nozzle, the flow parameters were high near the nozzle. In general their axial and radial values tended to decrease with increasing distance. For visualization of flow characteristics, a Particle Image Velocimetry (PIV) and a thermo-vision camera were used in the present study. The experimental results showed that heat transfer from bubble surface to water was largely completed within z = 10 mm from the nozzle, and then the temperature of bubble surface reached that of water rapidly. Due to the centrifugal force, the flow was more developed near the wall than at bubble-water plume. Vortex flow in the bottom region was relatively weaker than that in the upper region.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.3
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• pp.182-186
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• 2005

In this work, thermal evaporation system was employed to deposit thin films of SiC on glass substrates in order to determine the parameters of them. Measurements included transmission, absorption, Seebak effect, resistivity and conductivity, absorption coefficient, type of energy band-gap, extinction coefficient as functions of photon energy and the effect of increasing film thickness on transmittance. Results explained that SiC thin film is an n-type semiconductor of indirect energy band-gap of ${\sim}3eV$, cut-off wavelength of 448nm, absorption coefficient of $3.4395{\times}10^{4}cm^{-1}$ and extinction coefficient of 0.154. The experimental measured values are in good agreement with the typical values of SiC thin films prepared by other advanced deposition techniques.