• Title/Summary/Keyword: conductivity/resistivity

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Microstructural Characterization of MOCVD RuOx Thin Films and Effects of Annealing Gas Ambient (MOCVD RuOx 박막의 미세구조 특성평가와 열처리 가스환경 영향)

  • Kim, Gyeong-Won;Kim, Nam-Su;Choe, Il-Sang;Kim, Ho-Jeong;Park, Ju-Cheol
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.51 no.9
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    • pp.423-429
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    • 2002
  • RuOx thin films were fabricated by the method of liquid delivery MOCVD using Ru(C$_{8}$ $H_{13}$ $O_2$)$_3$ as the precursor and their thermal effects and conductivity were investigated. Ru films deposited at 25$0^{\circ}C$ were annealed at $650^{\circ}C$ for 1min with Ar, $N_2$ or N $H_3$ ambient. The changes of the micro-structure, the surface morphology and the electrical resistivity of the Ru films after annealing were studied. Ar gas was more effective than $N_2$ and N $H_3$ gases as an ambient gas for the post annealing of the Ru films, because of smaller resistivity and denser grains. The X-ray diffraction and X-ray photoelectron spectroscopy results indicate that the Ru $O_2$ phase and the silicidation are not observed regardless of the ambient gases. The minimum resistivity of the Ru film is found to have the value of 26.35 $\mu$Ω-cm in Ar ambient. Voids were formed at Ru/TiN interface of the Ru layer after annea1ing in $N_2$ ambient. The $N_2$ gas generated due to the oxidation of the TiN layer accumulated at the Ru/TiN interface, forming bubbles; consequently, the stacked film may peel off the Ru/TiN interface.e.

Evaluation of Thermal Conductivity for Screen-Printed AlN Layer on Al Substrate in Thickness Direction (알루미늄 기판에 스크린 인쇄한 AlN 후막의 두께 방향으로 열전도도 평가)

  • Kim, Jong-Gu;Park, Hong-Seok;Kim, Hyun;Hahn, Byung-Dong;Cho, Young-Rae
    • Journal of the Microelectronics and Packaging Society
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    • v.22 no.4
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    • pp.65-70
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    • 2015
  • A study on thermal properties for a single-layer metal and two-layer composites was investigated for the heat-sink application. For the single-layer metal, an aluminum alloy (Al6061) was selected. A screen printed aluminum nitride (AlN) layer on the Al6061 substrate was chosen for the two-layer composites. The thermal conductivity of the sample was determined from the thermal diffusivity measured by the light flash analysis (LFA), specific heat and density. Measured thermal property values were compared to calculated values using the data from the references. The thermal conductivity of composites with screen printed AlN layer on the Al6061 substrate decreased linearly with increasing the thickness of AlN layer. Measured values of the thermal conductivity for composites with $53{\mu}m$ and $163{\mu}m$ thick AlN layers were $114.1W/m{\cdot}K$ and $72.3W/m{\cdot}K$, respectively. In particular, the thermal conductivity of the screen-printed AlN layer was demonstrated by appling the rule of mixture in view point of thermal resistivity. Measured values of the thermal conductivity for AlN layers with the thickness of $53{\mu}m$ and $163{\mu}m$ showed $9.35W/m{\cdot}K$ and $12.40W/m{\cdot}K$, respectively.

Effect of Sc Addition on Microstructure, Electrical Conductivity, Thermal Conductivity and Mechanical Properties of Al-2Zn-1Cu-0.3Mg Based Alloy (Al-2Zn-1Cu-0.3Mg합금의 Sc첨가에 따른 미세조직, 전기전도도, 열전도도 및 기계적 특성 변화)

  • Na, Sang-Su;Kim, Yong-Ho;Son, Hyeon-Taek;Lee, Seong-Hee
    • Korean Journal of Materials Research
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    • v.30 no.10
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    • pp.542-549
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    • 2020
  • Effects of Sc addition on microstructure, electrical conductivity, thermal conductivity and mechanical properties of the as-cast and as-extruded Al-2Zn-1Cu-0.3Mg-xSc (x = 0, 0.25, 0.5 wt%) alloys are investigated. The average grain size of the as-cast Al-2Zn-1Cu-0.3Mg alloy is 2,334 ㎛; however, this value drops to 914 and 529 ㎛ with addition of Sc element at 0.25 wt% and 0.5 wt%, respectively. This grain refinement is due to primary Al3Sc phase forming during solidification. The as-extruded Al-2Zn-1Cu-0.3Mg alloy has a recrystallization structure consisting of almost equiaxed grains. However, the as-extruded Sc-containing alloys consist of grains that are extremely elongated in the extrusion direction. In addition, it is found that the proportion of low-angle grain boundaries below 15 degree is dominant. This is because the addition of Sc results in the formation of coherent and nano-scale Al3Sc phases during hot extrusion, inhibiting the process of recrystallization and improving the strength by pinning of dislocations and the formation of subgrain boundaries. The maximum values of the yield and tensile strength are 126 MPa and 215 MPa for the as-extruded Al-2Zn-1Cu-0.3Mg-0.25Sc alloy, respectively. The increase in strength is probably due to the existence of nano-scale Al3Sc precipitates and dense Al2Cu phases. Thermal conductivity of the as-cast Al-2Zn-1Cu-0.3Mg-xSc alloy is reduced to 204, 187 and 183 W/MK by additions of elemental Sc of 0, 0.25 and 0.5 wt%, respectively. On the other hand, the thermal conductivity of the as-extruded Al-2Zn-1Cu-0.3Mg-xSc alloy is about 200 W/Mk regardless of the content of Sc. This is because of the formation of coherent Al3Sc phase, which decreases Sc content and causes extremely high electrical resistivity.

Detection of Sea-water Intrusion Caused by Tidal Action Using DC Resistivity Monitoring (전기비저항 모니터링을 이용한 해수침투 파악)

  • Hwang, Hak-Soo;Lee, Sang-Kyu;Ko, Dong-Chan;Kim, Yang-Soo;Park, In-Hwa
    • Geophysics and Geophysical Exploration
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    • v.3 no.1
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    • pp.1-6
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    • 2000
  • The 1 $km^2$ area studied is located in Sukchun-ri, Hwasung-koon, the southern part of Kyeonggi-do. Even though this site has been known as a contaminated area caused by seawater intrusions, geophysical and geochemical surveys have never been carried out at the site to determine the extent of the seawater contamination and to investigate whether the seawater intrusion is in progress. The purpose of this study is to determine the extent of seawater contamination and a preferred channel of the seawater intrusion using geophysical methods such as DC resistivity surveys with Schlumberger array and a dipole-dipole array. In order to determine whether the seawater intrusion is in progress in the area, DC resistivity monitoring with Schlumberger array was performed. According to the resistivity map obtained from the inversion of the resistivity data measured with Schlumberger array, the study area is divided into two districts as relatively lowly resistive (less than 30 ohm-m) and highly resistive (more than 30 ohm-m) areas. The distribution of the lowly resistive area is consistent with the distribution of the layer composed of clay minerals, and the resistivity of this layer decreases slowly as approaching to the old seashore. Hydrogeological analysis shows that the clay layer within a distance of about 200 m from the seashore has been already contaminated by sea-water and its electric conductivity is 8 times higher than that of the sand layer covered by the clay layer. According to the results of the 2-dimensional DC resistivity surveys with a dipole-dipole array, there are two preferred channels of the seawater intrusion in the site, and both the channels are in the NW-SE direction from the old seashore. The lowly resistive zone in the southern channel extends to a depth of 80 m. The DC resistivity monitoring with Schlumberger array was carried out along the preferred channel which has the low resistivity Bone (fracture zone) that extended to a depth of 80 m. The time series of apparent resistivity, measured at a distance of 260 m from the old coast line, fluctuates with a period of 12 hours. From these observations, it can be concluded that the seawater intrusion caused by tidal action is still in progress along the fractured zone interpreted by the DC resistivity surveys with a dipole-dipole array.

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Electrical surveys at the Okmyung waste landfill of Pohang (포항 옥명 폐기물 매립장에서의 전기탐사)

  • Lee, Gi Hwa;Yun, Jong Ryeol
    • Journal of the Korean Geophysical Society
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    • v.1 no.1
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    • pp.41-50
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    • 1998
  • Schlumberger soundings, dipole-dipole survey and electrical conductivity mappings were carried out inside and in front of the entrance of the Okmyung waste landfill in August, 1997 and January, 1998. Inside and in front of the landfill, 11 and 4 electrical soundings and 1 dipole-dipole survey were carried out, respectively. Electrical conductivities were measured at 164 points along the 4 lines in front of the entrance of the landfill. Interpretations of survey data show that low resistivity zones of 0.3∼3 Ωm extend down to 65 m depth from the surface in the 6th landfill, which indicates subsurface contamination by leachate and leachate level at 3∼6 m depth from the surface. In the 9th landfill, low resistivity zones below 2 Ωm appear at 11∼15 m depth from the surface, which indicates a very slim chance of subsurface contamination. On the other hand, electrical surveys and electrical conductivity mappings reveal low resistivities at shallow depths in front of the entrance of the landfill, indicating a high possibility of contamination of weathered zone in this area. It appears that southern part of this area close to the 6th landfill is more contaminated by leachate.

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Detection of Buried Objects and Imaging of Subsurface Resistivity Structure using Loop-Loop EM Methods (소형루프 전자탐사법을 이용한 매설물 탐지 및 지하 전기비저항 영상화)

  • Seol Soon Jee;Song Yoonho;Cho Seong-Jun;Son Jeong-Sul;Chung Seung-Hwan
    • Geophysics and Geophysical Exploration
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    • v.5 no.4
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    • pp.309-315
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    • 2002
  • Conventional electromagnetic (EM) method using small loops as a source and receiver has been used in detection of conductive buried objects like a metal detector or in qualitative estimation of the subsurface conductivity variation. Recently, however, since detection of buried objects and imaging of the subsurface conductivity distribution in a relatively conductive area are in a high demand for environmental and engineering purposes, the quantitative interpretation technique of EM data is actively studied. In this regard, we introduce a brief principle of EM survey and show an example of the detection of buried conductive material and imaging of the subsurface conductivity distribution based on data measured at a test survey area. Through this study, we show that multi-frequency EM surveys using small loops may be a good solution to give quick and detail information of subsurface in a conductive survey area.

Thickness and Annealing Effects on the Thermoelectric Properties of P-type Bi0.5Sb1.5Te3 Thin Films (P형 Bi0.5Sb1.5Te3 박막의 열전 특성에 미치는 두께 및 어닐링 효과)

  • Kim Il-Ho;Jang Kyug-Wook
    • Korean Journal of Materials Research
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    • v.14 no.1
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    • pp.41-45
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    • 2004
  • P-type $Bi_{0.5}$$Sb_{1.5}$ $Te_3$ thin films were deposited by the flash evaporation technique, and their thermoelectric properties and electronic transport parameters were investigated. The effective mean free path model was adopted to examine the thickness effect on the thermoelectric properties. Annealing effects on the carrier concentration and mobility were also studied, and their variations were analyzed in conjunction with the antisite defects. Seebeck coefficient and electrical resistivity versus inverse thickness showed a linear relationship, and the effective mean free path was found to be 3150$\AA$. No phase transformation and composition change were observed after annealing treatment, but carrier mobility increased due to grain growth. Carrier concentration decreased considerably due to reduction of the antisite defects, so that electrical conductivity decreased and Seebeck coefficient increased. When annealed at 473 K for 1 hr, Seebeck coefficient and electrical conductivity were $160\mu$V/K and 610 $W^{-1}$ $cm^{ -1}$, respectively. Therefore, the thermoelectric quality factor were also enhanced to be $16\mu$W/cm $K^2$.>.

Characterization of Continuous Cast Cu-Ni-Si Alloys (연속주조된 Cu-Ni-Si계 합금의 특성평가)

  • Lee, Jung-Il;Cho, Hoon
    • Journal of the Korean Society for Heat Treatment
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    • v.25 no.6
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    • pp.292-298
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    • 2012
  • In this study, Cu-2.5at.%Ni-1at.%Si alloys were fabricated by horizontal continuous casting system to improve the electrical conductivity and mechanical properties of Cu-Ni-Si alloy. Withdrawing speed was changed with 50, 100, 150 and 200 mm/min for the optimum manufacturing condition. Microstructure was observed using OM, FE-SEM and TEM. Electrical conductivity was measured by 4-point probe method and mechanical properties were tested. A horizontal continuous cast thin slab had sound macro and micro structures with partly crystallized structures. Electrical resistivity decreased with increasing annealing temperature from 250 to $850^{\circ}C$, with increasing annealing temperature The maximum hardness and tensile strength were Hv 130, 610 MPa at $550^{\circ}C$, respectively. With changing withdrawing speed from 50 to 150 mm/min, hardness, tensile strength, yield strength and elongation were Hv 60-65, 210-230 MPa, 65-75 MPa and 40-50%, respectively.

CHARACTERISTICS OF ELECTRICAL RESISTANCE IN MN-CO-NI-FE OXIDE (MN-CO-NI-FE 산화물의 전기저항특성)

  • YoungMinKim;ChaiSukYim;GoingYim
    • Journal of the Korean Geophysical Society
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    • v.4 no.4
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    • pp.257-266
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    • 2001
  • The properties of electrical resistance of Mn-Co-Ni-Fe oxide-based therrnistor with various Fe contents in sintering process at 1200 to 1400℃ for 4 hours in air atmosphere for fabricating therrnistor materials were investigated. The results were as follows: all samples showed single cubic spinel crystal structures in all region. The electrical conductivinity is the highlest thermistor sintered at 1300℃ for 4 hours. In general when the Fe content is increased except F-2, the resistivity increases and relatively the conductivity decreases. Particularly F-2 composition exhibited the highlest electrical conductivity(1.4x $10^-3$$Ω$cm) and relatively low B constant(2906K)

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Thermoelectric Properties of Binary Skutterudite CoSb3 Prepared by Encapsulated Induction Melting (밀폐유도용해로 제조된 2원계 Skutterudite CoSb3의 열전특성)

  • You, Sin-Wook;Jung, Jae-Yong;Ur, Soon-Chul;Kim, Il-Ho
    • Korean Journal of Materials Research
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    • v.16 no.5
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    • pp.312-317
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    • 2006
  • Binary skutterudite $CoSb_3$ compounds were prepared by the encapsulated induction melting (EIM) process, and their thermoelectric, microstructural and mechanical properties were examined. Single-phase ${\delta}-CoSb_3$ was successfully produced by the EIM and subsequent heat treatment at 773 K-873 K for 24 hours in vacuum. Seebeck coefficient increased with increasing heat treatment temperature up to 673 K, showing the positive signs in the range of measuring temperature. However, the samples heat-treated at 773 K-873 K showed negative Seebeck coefficient from room temperature to 400 K, while it showed positive signs above 400 K. Electrical resistivity decreased with increasing temperature, showing typical semiconducting conductivity. Thermal conductivity decreased drastically with increasing heat-treatment temperature. This is closely related with the phase transition to ${\delta}-CoSb_3$.