• Journal of the Korean Graphic Arts Communication Society
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• v.26 no.2
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• pp.31-43
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• 2008

The functional dyes, which has various optical characteristics that can be applicable to field of electronic, photo electronic, such as sensor or electrode, were synthesized. Physical property and optical stability was studied with preparation of conductive type film as a kind of optical filter of plasma display panel, by adapting neon cut off dye, which can selectively absorbing between 580 and 610nm wavelength. The filter was prepared with PSA resin, which has functional group of - COOH and - OH, as binder. And the characters such as spectroscopy, heat-proof / wet-proof, thermal stability and commerciality, which must be held by functional dyes, were examined. Conductive type film is the kind of film includes only neon cut off dyes. For the neon cut off dyes, cyanine dyes can be applied. And it is observed that spectrum of before and after the durability test are not changed due to stability of dyes, as the result of coating on the mesh film with PSA binder.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.2
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• pp.170-174
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• 2023

Nickel oxide is a nonstoichiometric transparent conductive oxide with p-type conductivity, a wide-band energy gap of 3.4~4.0 eV, and excellent chemical stability, making it a very important candidate as a material for bipolar devices. P-type conductivity in Transparent Conductive Oxides (TCO) is controlled by the oxygen vacancy concentration. During the TCO film deposition process, additional oxygen diffusing into the NiO structure causes the formation of Ni 3p ions and Ni vacancies. This eventually affects the hole concentration of the p-type oxide thin film. In this work, the surface morphology and the electrical characteristics were confirmed in accordance with the annealing atmosphere of the nickel oxide thin film.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.209-209
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• 2012

High-efficient transparent conductive oxide (TCO) film-embedding Si heterojunction solar cells were fabricated. An additional doping was not applied for heterojunction solar cells due to the spontaneous junction formation between TCO films and an n-type Si substrate. Three different TCO coatings were formed by sputtering method for an Al-doped ZnO (AZO) film, an indium-tin-oxide (ITO) film and double stacks of ITO/AZO films. An improved crystalline ITO film was grown on an AZO template upon hetero-epitaxial growth. This double TCO films-embedding Si heterojunction solar cell provided significantly enhanced efficiency of 9.23% as compared to the single TCO/Si devices. The effective arrangement of TCO films (ITO/AZO) provides benefits of a lower front contact resistance and a smaller band offset to Si leading enhanced photovoltaic performances. This demonstrates a potential scheme of the effective TCO film-embedding heterojunction Si solar cells.

• Journal of Powder Materials
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• v.18 no.5
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• pp.423-429
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• 2011

Thermoelectric-thick films were fabricated by using a screen printing process of n and p-type bismuth-telluride-based pastes. The screen-printed thick films have approximately 30 ${\mu}m$ in thickness and show rough surfaces yielding an empty gap between an electrode and the thick film. The gap might result in an increase of an electrical resistivity of the fabricated thick-film-type thermoelectric module. In this study, we suggest a conductive metal coating onto the surfaces of the screen-printed paste in order to reduce the contact resistance in the module. As a result, the electrical resistivity of the thermoelectric module having a gold coating layer was significantly reduced up to 30% compared to that of a module without any metal coating. This result indicates that an introduction of conductive metal layers is effective to decrease the contact resistivity of a thick-film-typed thermoelectric module processed by screen printing.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.09a
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• pp.21-30
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• 2002

According the difference of flex substrate, (reel tape), there are three kind assembly types of LCD driver IC is COG, TCP and COF, respectively. The TCP is the maturest in these types for stability of raw material supply and other specification. And TCP is the major assembly type of LCD driver IC and the huge demand from Taiwan's large TFT LCD panel house since this spring. But due to its package structure and the raw material applied in this package, there is some limitation in fine pitch application of this package type, (TCP). So, COF will be very potential in compact and portable application comparison with TCP in the future. There are three kinds assembly methods in COF, one is ACF by using the anisotropic conductive film to connect the copper lead of tape and gold bump of IC, another is eutectic bonding by using the thermo-pressure to joint the copper lead of tape and gold bump of IC, and last is NCP by using non-conductive paste to adhere the copper lead of tape and gold bump of IC. To have a global realization, this paper will briefly review the status of Taiwan's large TFT panel house, the internal driver IC design house, and the back-end assembly house in the beginning. The different material property of raw material, PI tape is also compared in the paper. The more detail of three kinds of COF assembly method will be described and compared in this paper.

• Journal of Information Display
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• v.4 no.1
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• pp.17-23
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• 2003

A thermoset type anisotropic conductive adhesive film (ACAF) comprising epoxy resin and natural butyl rubber (NBR) as the binder, micro-encapsulated imidazole as the curing agent, and Ni/Au coated polymer bead as a conductive particle has been studied. These films have been prepared to respond to requirements such as improved contact resistance, current status less of than 60 ${\mu}m$ and reliability. These films can also be used for connection between the ITO glass for LCD panel and the flexible circuit board. The curing conditions for the connection were 40, 20 and 15 seconds at 150, 170 and 190 $^{\circ}C$, respectively. The initial contact resistance and adhesion strength were 0.5 ${\Omega}/square$ and 0.4 kg/cm under the condition of 30 kgf/$^{cm}^2}$, respectively. After completing one thousand thermal shock cycling tests between -15 $^{\circ}C$ and 100 $^{\circ}C$, the contact resistance was maintained below 0.7 ${\Omega}/square$. Durability against high temperature (80$^{\circ}C$) and high humidity (85 % RH) was also tested to confirm long-term stability (1000 hrs) of the conduction.

• Journal of the Korean Society of Safety
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• v.19 no.3 s.67
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• pp.51-56
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• 2004

Conductive polymer blends and composites are widely used for different safety application such as electrostatic charge dissipation(ESD), electromagnetic interference(EMI) shielding, electrostatic prevention and safety chemical sensor. In order to prepare a impedance-type humidity sensor that is durable at high humidities and high temperature, electically conductive polymer blends based on diallyldimethylammonium chloride(DADMAC) and epoxy were prepared in this study. The polymer blends type conductive ionomer exhibits reaction each other DADMAC and epoxy in FT-IR and DSC analysis. The blends material was traced by new peak at 1600cm-1 and appeard improvement of thermal resistance by melting point shift. Alumina substrate was deposited a pair of gold electrodes by screen printing. The blend material were spin-coated with a thin film type on the surface of alumina substrate. The polymer bleld type sensor exhibits a linear impedance increasing better than DADMAC coated humidity sensor. Also it shows good sensitivity, low hysteresis and durability against high humidity.

• Korean Journal of Materials Research
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• v.21 no.6
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• pp.341-346
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• 2011

In this study, we inserted a Zn buffer layer into a AZO/p-type a-si:H layer interface in order to lower the contact resistance of the interface. For the Zn layer, the deposition was conducted at 5 nm, 7 nm and 10 nm using the rf-magnetron sputtering method. The results were compared to that of the AZO film to discuss the possibility of the Zn layer being used as a transparent conductive oxide thin film for application in the silicon heterojunction solar cell. We used the rf-magnetron sputtering method to fabricate Al 2 wt.% of Al-doped ZnO (AZO) film as a transparent conductive oxide (TCO). We analyzed the electro-optical properties of the ZnO as well as the interface properties of the AZO/p-type a-Si:H layer. After inserting a buffer layer into the AZO/p-type a-Si:H layers to enhance the interface properties, we measured the contact resistance of the layers using a CTLM (circular transmission line model) pattern, the depth profile of the layers using AES (auger electron spectroscopy), and the changes in the properties of the AZO thin film through heat treatment. We investigated the effects of the interface properties of the AZO/p-type a-Si:H layer on the characteristics of silicon heterojunction solar cells and the way to improve the interface properties. When depositing AZO thin film on a-Si layer, oxygen atoms are diffused from the AZO thin film towards the a-Si layer. Thus, the characteristics of the solar cells deteriorate due to the created oxide film. While a diffusion of Zn occurs toward the a-Si in the case of AZO used as TCO, the diffusion of In occurs toward a-Si in the case of ITO used as TCO.

• Journal of the Korean Vacuum Society
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• v.20 no.2
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• pp.146-154
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• 2011

The adhesive-tape of a liquid leak film sensor including the alarm system is developed. The sensing film is composed of three layers such as base film layer, conductive line layer, and protection film layer. The thickness of film is 300~500 um, the width is 3.55 cm, and the unit length is 200 m. On the conductive line layer, three conducting lines and one resistive line are formulated by the electronic printing method with a conducting ink of silver-nano size. When a liquid leaks for the electricity to be conducted between the conductive line and the resistive line, the position of leakage is monitored by measuring the voltage varied according to the change of resistance between two lines. The error range of sensing position of 200 m film sensor is ${\pm}1m$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.269-272
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• 1996

The electrochemical behavior of Ru complex and PD complex monolayer, deposited on conductive substrate by the Langmuir-Blodgett(LB) technique as monolayer and multilayer, has been studied by cyclic voltammetry. Monolayer films show stable reversible state. Atomic resolution imaging of LB highly-conductive, environmently stable organic films has been obtained by atomic force microscopy (AFM) showing their closely packed structure,