• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2004.11a
• /
• pp.5-5
• /
• 2004

• Journal of the Korean Society of Manufacturing Process Engineers
• /
• v.17 no.6
• /
• pp.53-60
• /
• 2018

In this paper, the effect of different 3D printing parameters including laminated angle and annealing temperature is observed their effect on FDM conductive 3D printing. In FDM 3D printing, a conductive filament is heated quickly, extruded, and then cooled rapidly. FDM 3D Print conductive filament is a poor heat conductor, it heats and cools unevenly causing the rapid heating and cooling to create internal stress. when the printed conductive specimens this internal stress can be increase electrical resistance and decrease electrical conductivity. Therefore, This experiment would like to use annealing to remove internal stress and increase electrical conductivity. The result of experiment when 3D printing conductive specimen be oven cooling of annealing temperature $120^{\circ}C$ electrical resistance appeared decrease than before annealing. So We have found that 3D printing annealing removes internal stresses and increases the electrical conductivity of printed specimens. These results are very useful for making conductive 3D printing electronic circuit, sensor ect...with electrical conductance suitable for the application.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.237.2-237.2
• /
• 2013

ReRAM cell, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of conductive filament in a solid electrolyte [1,2]. Especially, Chalcogenide-based ReRAM have become a promising candidate due to the simple structure, high density and low power operation than other types of ReRAM but the uniformity of switching parameter is undesirable. It is because diffusion of ions from anode to cathode in solid electrolyte layer is random [3]. That is to say, the formation of conductive filament is not go through the same paths in each switching cycle which is one of the major obstacles for performance improvement of ReRAM devices. Therefore, to control of nonuniform conductive filament formation is a key point to achieve a high performance ReRAM. In this paper, we demonstrated the enhanced repeatable bipolar resistive switching memory characteristics by spreading the Ag nanocrystals (Ag NCs) on amorphous GeSe layer compared to the conventional Ag/GeSe/Pt structure without Ag NCs. The Ag NCs and Ag top electrode act as a metal supply source of our devices. Excellent resistive switching memory characteristics were obtained and improvement of voltage distribution was achieved from the Al/Ag NCs/GeSe/Pt structure. At the same time, a stable DC endurance (>100 cycles) and an excellent data retention (>104 sec) properties was found from the Al/Ag NCs/GeSe/ Pt structured ReRAMs.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2014.11a
• /
• pp.61-74
• /
• 2014

전자제품에서 반도체 부품의 협피치화가 진행됨에 따라 PCB의 회로와 회로 사이의 간격 혹은 Hole과 Hole간의 간격이 줄어듬에 따라 ECM(Electrochemical Migration)과 CAF(Conductive Anodic Filament)의 불량이 증가하게 되었다. 특히 열악한 환경에서 사용되는 Power Supplier나 사용전압이 높아지는 전기 및 수소연료 자동차 분야에선 이들 불량방지에 노력을 기울여야겠다.

• Journal of the Microelectronics and Packaging Society
• /
• v.28 no.4
• /
• pp.41-45
• /
• 2021

In this study, in order to secure the high reliability of the memristor, we adopted a patterned lithium filament seed layer as the main agent for resistive switching (RS) characteristic on the 30 nm thick ZrO₂ thin film at the device manufacturing stage. Lithium filament seed layer with a thickness of 5 nm and an area of 5 ㎛ × 5 ㎛ were formed on the ZrO₂ thin film, and various electrode areas were applied to investigate the effect of capacitance on filament type memristive behavior in the parallel memristive circuit of memristor and capacitor. The RS characteristics were measured in the samples before and after 250℃ post-annealing for lithium metal diffusion. In the case of conductive filaments formed by thermal diffusion (post-annealed sample), it was not available to control the filament by applying voltage, and the other hand, the as-deposited sample showed the reversible RS characteristics by the formation and rupture of filaments. Finally, via the comparison of the RS characteristics according to the electrode area, it was confirmed that capacitance is an important factor for the formation and rupture of filaments.

• Korean Journal of Materials Research
• /
• v.32 no.9
• /
• pp.384-390
• /
• 2022

A spin coating process for RRAM, which is a TiN/TiO₂/FTO structure based on a PTC sol solution, was developed in this laboratory, a method which enables low-temperature and eco-friendly manufacturing. The RRAM corresponds to an OxRAM that operates through the formation and extinction of conductive filaments. Heat treatment was selected as a method of controlling oxygen vacancy (V_O), a major factor of the conductive filament. It was carried out at 100 ℃ under moisture removal conditions and at 300 ℃ and 500 ℃ for excellent phase stability. XRD analysis confirmed the anatase phase in the thin film increased as the heat treatment increased, and the Ti³⁺ and OH- groups were observed to decrease in the XPS analysis. In the I-V analysis, the device at 100 ℃ showed a low primary SET voltage of 5.1 V and a high ON/OFF ratio of 10⁴. The double-logarithmic plot of the I-V curve confirmed the device at 100 ℃ required a low operating voltage. As a result, the 100 ℃ heat treatment conditions were suitable for the low voltage driving and high ON/OFF ratio of TiN/TiO₂/FTO RRAM devices and these results suggest that the operating voltage and ON/OFF ratio required for OxRAM devices used in various fields under specific heat treatment conditions can be compromised.

• Journal of Korean Vacuum Science & Technology
• /
• v.4 no.3
• /
• pp.86-90
• /
• 2000

ZnO : Al films were prepared through the optimization process of aluminum content and substrate temperature in rf-magnetron sputtering. When hydrogenation was performed on these films using a hot filament method, all films showed improvement in conductivity although more conductive film showed less improvement. When the substrate temperature ($T_H$) was varied from $25^{\circ}C\;to\;300^{\circ}C$ during hydrogenation, the resistivity was reduced more at higher $T_H$ (more than 30% at $T_H=300^{\circ}C$) Thus, two methods were developed to suppress the dehydrogenation in ZnO : Al films : (1) capping with amorphous silicon thin film as a diffusion barrier, and (2) cooling during hydrogenation.

• Transactions of the Korean hydrogen and new energy society
• /
• v.25 no.2
• /
• pp.131-138
• /
• 2014

Highly conductive bipolar plate for polymer electrolyte membrane fuel cell (PEMFC) was prepared using phenol novolac-type epoxy/graphite powder (GP)/carbon fiber filament (CFF) composite, and a rubber-modified epoxy resin was introduced in order to give elasticity to the bipolar plate graphite fiber (GF) was incorporated in order to improve electrical conductivity. To find out the cure condition of the mixture of novolac-type and rubber-modified epoxies, differential scanning calorimetry (DSC) was carried out and their data were introduced to Kissinger equation. And tensile and flexural tests were carried out using universal testing machine (UTM) and the surface morphology of the fractured specimen and the interfacial bonding between epoxy matrix and CFF or GF were observed by a scanning electron microscopy (SEM).

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.343-344
• /
• 2012

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states. [1-3] We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.326-326
• /
• 2014

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states [1-3]. We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.