• 제목/요약/키워드: conduction ratio

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골재종류 및 기포도입율 변화에 따른 경량기포 콘크리트의 기초적 특성 (Fundamental properties of Lightweight Foamed Concrete by Applying Different Types of Aggregates and Foam Conduction Ratio)

  • 황금광;김대건;문경식;정광복;한민철;한천구
    • 한국건축시공학회:학술대회논문집
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    • 한국건축시공학회 2014년도 춘계 학술논문 발표대회
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    • pp.132-133
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    • 2014
  • In this study, high volume of industrial by-products including blast furnace slag, recycled aggregate powder and incineration ash have been utilized on the slurry of the foamed lightweight concrete. As to decrease the price of the lightweight foam concrete, mortar based slurry and concrete based slurry has been fixed. As the variation of the foam conduction ratio and aggregates, the foam ratio and compressive strength has been tested. Results showed that using recycled aggregates in the slurry showed better effect than using natural aggregates due to the alkali properties of the recycled aggregates could activate the potential hydraulic properties of the blast furnace slag. Consider about the low price of the recycled aggregates, it could be identified that using recycled aggregates in high volume blast furnace slag blended lightweight concrete showed better compressive strength than natural aggregates.

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a-Si:H Photodiode Using Alumina Thin Film Barrier

  • Hur Chang-Wu;Dimitrijev Sima
    • Journal of information and communication convergence engineering
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    • 제3권4호
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    • pp.179-183
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    • 2005
  • A photodiode capable of obtaining a sufficient photo/ dark current ratio at both forward bias state and reverse bias state is proposed. The photodiode includes a glass substrate, an aluminum film formed as a lower electrode over the glass substrate, an alumina film formed as an insulator barrier over the aluminum film, a hydrogenated amorphous silicon film formed as a photo conduction layer over a portion of the alumina film, and a transparent conduction film formed as an upper electrode over the hydro-generated amorphous silicon film. A good quality alumina $(Al_2O_3)$ film is formed by oxidation of aluminum film using electrolyte solution of succinic acid. Alumina is used as a potential barrier between amorphous silicon and aluminum. It controls dark-current restriction. In case of photodiodes made by changing the formation condition of alumina, we can obtain a stable dark current $(\~10^{-12}A)$ in alumina thickness below $1000{\AA}$. At the reverse bias state of the negative voltage in ITO (Indium Tin Oxide), the photo current has substantially constant value of $5{\times}10^{-9}$ A at light scan of 100 1x. On the other hand, the photo/dark current ratios become higher at smaller thicknesses of the alumina film. Therefore, the alumina film is used as a thin insulator barrier, which is distinct from the conventional concept of forming the insulator barrier layer near the transparent conduction film. Also, the structure with the insulator thin barrier layer formed near the lower electrode, opposed to the ITO film, solves the interface problem of the ITO film because it provides an improved photo current/dark current ratio.

선형 저밀도 폴리에틸렌/에틸렌 비닐아세테이트 블렌드의 전기전도 특성 (Electrical Conduction Properties of Linear Low Density Polyethylene/Ethylene Vinyl Acetate Blend Film)

  • 이태훈;이충호;조경순;이용우;이수원;신종열;홍진웅
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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    • pp.875-877
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    • 1998
  • In this paper, the physical and electrical properties of electrical insulating materials due to linear low density polyethylene (LLDPE)/ethylene vinyl acetate(EVA) blends are studied. The peak of LLDPE/EVA made by blend ratio of 70:30 at $2{\theta}=21.4^{\circ}$ in the results of XRD is higher than the others. In the experiment for electrical conduction properties in order to investigate the electrical properties of specimen, it is confirmed that electrical conduction is increased with the increase of molecular motions with the increase of temperature.

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Analysis and Implementation of a New Single Switch, High Voltage Gain DC-DC Converter with a Wide CCM Operation Range and Reduced Components Voltage Stress

  • Honarjoo, Babak;Madani, Seyed M.;Niroomand, Mehdi;Adib, Ehsan
    • Journal of Power Electronics
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    • 제18권1호
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    • pp.11-22
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    • 2018
  • This paper presents a single switch, high step-up, non-isolated dc-dc converter suitable for renewable energy applications. The proposed converter is composed of a coupled inductor, a passive clamp circuit, a switched capacitor and voltage lift circuits. The passive clamp recovers the leakage inductance energy of the coupled inductor and limits the voltage spike on the switch. The configuration of the passive clamp and switched capacitor circuit increases the voltage gain. A wide continuous conduction mode (CCM) operation range, a low turn ratio for the coupled inductor, low voltage stress on the switch, switch turn on under almost zero current switching (ZCS), low voltage stress on the diodes, leakage inductance energy recovery, high efficiency and a high voltage gain without a large duty cycle are the benefits of this converter. The steady state operation of the converter in the continuous conduction mode (CCM) and discontinuous conduction mode (DCM) is discussed and analyzed. A 200W prototype converter with a 28V input and a 380V output voltage is implemented and tested to verify the theoretical analysis.

스퍼터된 바나듐 산화막의 전기적 특성에 미치는 진공 어닐링의 효과 (Effects of Vacuum Annealing on the Electrical Properties of Sputtered Vanadium Oxide Thin Films)

  • 황인수;이승철;최복길;최창규;김남철
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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    • pp.435-438
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    • 2003
  • The effects of oxygen partial pressure and vacuum annealing on the electrical properties of sputtered vanadium oxide($VO_x$) thin films were investigated. The thin films were prepared by r.f. magnetron sputtering from $V_2O_5$ target in a gas mixture of argon and oxygen. The oxygen/(oxygen+argon) partial pressure ratio of 0% and 8% is adopted. Electrical properties of films sputter-deposited under different oxygen gas pressures and in situ annealed in vacuum at $400^{\circ}C$ for 1h and 4h are characterized through electrical conductivity measurements. I-V characteristics were distinguished between linear and nonlinear region. In the low field region the conduction is due to Schottky emission, while at high fields it changes to Fowler-Nordheim tunneling type conduction. The conductivity measurements have shown an Arrhenius dependence of the conductivity on the temperature.

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$(Ba,Sr)TiO_3$박막의 전기적 성질과 누설전류 전도기구 (Electrical properties of $(Ba,Sr)TiO_3$ thin films and conduction mechanism of leakage current)

  • 정용국;임원택;손병근;이창효
    • 한국진공학회지
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    • 제9권3호
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    • pp.242-248
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    • 2000
  • 고주파 스퍼터링 방법으로 증착조건을 변화시키면서 BST 박막을 제작하였다. 증착온도가 높을수록, Ar/O$_2$비가 적을수록 우수한 전기적 특성을 보였다. 누설전류 전도기구를 분석하기 위해 Schottky모델과 modified-Schottky모델을 도입하였다. BST 박막의 누설전류 전도기구는 기존의 Schottky모델이 아니라 modified-Schottky 모델을 따른다는 것을 알았다. Modified-Schottky 모델을 사용하여 광학유전상수 $\varepsilon$=4.9, 이동도 $\mu$=0.019 $\textrm{cm}^2$/V-s, 그리고 장벽높이 $\phi_b$ =0.79 eV를 구하였다.

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Control of Graphene's Electrical Properties by Chemical Doping Methods

  • Lee, Seung-Hwan;Choi, Min-Sup;La, Chang-Ho;Yoo, Won-Jong
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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    • pp.119-119
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    • 2011
  • This study examined the synthesis of large area graphene and the change of its characteristics depending on the ratio of CH4/H2 by using the thermal CVD methods and performed the experiments to control the electron-hole conduction and Dirac-point of graphene by using chemical doping methods. Firstly, with regard to the characteristics of the large area graphene depending on the ratio of CH4/H2, hydrophobic characteristics of the graphene changed to hydrophilic characteristics as the ratio of CH4/H2 reduces. The angle of contact also increased to 78$^{\circ}$ from 58$^{\circ}$. According to the results of Raman spectroscopy showing the degree of defect, the ratio of I(D)/I(G) increases to 0.42% from 0.25% and the surface resistance also increased to 950 ${\Omega}$ from 750 ${\Omega}$/sq. As for the graphene synthesis at the high temperature of 1,000$^{\circ}$ by using CH4/H2 in a Cu-Foil, the possibility of graphene formation was determined as a function of the ratio of H2 included in the fixed quantity of CH4 as per specifications of every equipment. It was observed that the excessive amount of H2 prevented graphene from forming, as extra H-atoms and molecules activated the reaction to C-bond of graphene. Secondly, in the experiment for the electron-hole conduction and the Dirac-point of graphene using the chemical doping method, the shift of Dirac-point and the change in the electron-hole conduction were observed for both the N-type (PEI) and the P-type (Diazonium) dopings. The ID-VG results show that, for the N-type (PEI) doped graphene, Dirac-point shifted to the left (-voltage direction) by 90V at an hour and by 130 V at 2 hours respectively, compared to the pristine graphene. Carrier mobility was also reduced by 1,600 cm2/Vs (1 hour) and 1,100 cm2/Vs (2 hours), compared to the maximum hole mobility of the pristine graphene.

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비점성 정체 유동 응고 문제에 대한 이론적 해석 (A theoretical analysis on the inviscid stagnation-flow solidification problem)

  • 유주식
    • 설비공학논문집
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    • 제12권1호
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    • pp.1-11
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    • 2000
  • This study investigates the problem of phase change from liquid to solid in the inviscid stagnation flow. The solution of dimensionless governing equations is determined by the three dimensionless parameters of (temperature ratio/conductivity ratio), Stefan number, and diffusi-vity ratio. The solution at the initial stage of freezing is obtained by expanding it in powers of time, and the final equilibrium state is determined from the steady-state governing equations. The equilibrium state is dependent on (temperature ratio/conductivity ratio), but is independent of Stefan number and diffusivity ratio. The effect of fluid flow on the pure conduction problem can be clearly seen from the solution of the initial stage and the final equilibrium state, and the characteristics of the solidification process for all the dimensionless parameters are elucidated.

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부도체 방향복사면이 있는 무한 정사각관의 전도-복사열전달 (Conductive-Radiative Heat Transfer in an Infinite Square Duct with Dielectric Directional Property Wall)

  • 변기홍;임문혁
    • 대한기계학회논문집B
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    • 제27권5호
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    • pp.543-552
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    • 2003
  • The effects of a directionally emitting and reflecting dielectric surface on the wall heat flux and medium temperature distribution are studied. The system is an infinite square duct enclosing an absorbing and emitting medium. The emissivity and reflectivity of opaque and gray wall vary with direction. Combined effect of conductive and radiative heat transfer is analyzed using finite difference and the direct discrete-ordinates method. The parameters under study are conduction to radiation parameter, optical depth, refractive index ratio. The results with directional and diffuse properties deviate each other when the conduction to radiation parameter is less than around 0.01. The wall heat flux differs fur optical thickness less than around 0.1. However, the medium temperature profiles differ for optical thickness greater than around 1. Deviations from diffuse property calculations are larger for hot wall with directional property than cold wall with directional property. As n increases from 1.5, the trend changes are observed fur refractive index ratio about n=6.10

상변화 물질을 사용한 축열조에서의 열전달 - 수직원관에서의 내향용융 실험 - (Heat Transfer in Heat Storage System with P.C.M. - Inward Melting in a Vertical Tube)

  • 손화승;황태인;이채문;최국광;임장순
    • 태양에너지
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    • 제9권1호
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    • pp.53-61
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    • 1989
  • In the present investigation, experiments on the melting of a phase change material were performed to research heat transfer phenomena generated by means of conduction and natural convection in the vertical tube at inward melting. The phase change material used in the experiments is 99 percent pure n-Docosane paraffin which is measured melting temperature of $42.5^{\circ}C$, latent heat of 37.5 cal/g, heat conductivity of $0.1505W/m^{\circ}C$. Experiments were performed both in the no-subcooling which is initiating it at melting temperature of phase change material, and in the subcooling which means to initiate it under melting temperature of phase change material, in order to compare and investigate the horizontal temperature history, vertical temperature history, ratio of melting and melted mass, figure of the melting front in the vertical tube. In the experimental results, heat transfer from tube wall to phase change material were due to conduction at early stage and due to natural convection with the passage of time, and then occurred melting downward from surface by volumetric expansion. Natural convection affects temperature distribution in the tube, ratio of melting and melted mass, figure of the melting front and then progress rapidly in case of nosubcooling compared to subcooling.

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