• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.207-210
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• 1998

Electrical properties such as space charge distribution and electrical conduction of XLPE/VLDPE blends were studied. When the VLDPE is blended, residual charge inside XLPE increases. In case of electrical conduction characteristics, there were no changes in electrical conduction mechanism, space charge limited conduction. XLPE/VLDPE blend including crosslinking coagent showed relatively small current density. It might be due to the carbonyl group in crosslinking coagent.

• Journal of the Korean Electrochemical Society
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• v.23 no.4
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• pp.81-89
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• 2020

To understand the performance of the electrochemical device, the analysis of the mechanism of ionic conduction is important. However, due to the ionic interaction in the electrolyte and the complexity of the electrolyte structure, a clear analysis method of the ion conduction mechanism has not been proposed. Instead, a variety of mathematical models have been devised to explain the mechanism of ion conduction, and this review introduces the Arrhenius and Vogel-Tammann-Fulcher (VTF) model. In general, the above two mathematical models are used to describe the temperature dependence of the transport properties of electrolytes such as ionic conductivity, diffusion coefficient, and viscosity, and a suitable model can be determined through the linearity of the graph consisting of the logarithm of the moving property and the reciprocal of the temperature. Currently, many electrolyte studies are evaluating the suitability of the above two models for electrolytes by varying the composition and temperature range, and the ion conduction mechanism analysis and activation energy calculation are in progress. However, since there are no models that can accurately describe the transport properties of electrolytes, new models and improvement of existing models are needed.

• Journal of Surface Science and Engineering
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• v.22 no.3
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• pp.145-153
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• 1989

양극산화 피막의 형성 반응에 대한 연구는 1930년대부터 되어 왔으며, 특히 High Field Conduction에 대한 물리학자들의 관심도는 아주 높아었다. 1960년대 이르러 비정질 구조에 대한 심도 있는 연구가 진행되면서, 여러 가지 이론적으로 풀지 못하는 실험실적 결과들에 대한 제한들이 나오게 되었고, Ionic Migration Process에 대한 Kinetics는 많은 발전을 보게 되었다. 최근까지의 연구결과, Ioinc Conduction Mechanism은 Anodic Film의 미세 결정 구조와 밀접한 연관성을 가진다는 결론에 도달하였고, 비정질 구조의 High Field하에서의 거동에 대한 새로운 분야의 연구가 진행되고 있다. 본 고에서는 반응 Mechanism에 관한 연구결과들을 1930년대 이후 어떻게 진행되어 설명 되었는가를 조명하므로서 실제 실험 결과의 해석게 도움이 되었으면 하는 바램이다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.3
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• pp.227-234
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• 2000

Electrical conduction characteristics of crosslinked polyethylene(XLPE) were investigated using an electrode made of semicon material containing a surfactant. When the semicon material is used as an electrode the conduction of XLPE obeys a space charge limited conduction(SCLC) mechanism which holds true for both control and surfactant-containing semicon electrodes. Conduction currents get higher with the addition of surfactant in the semicon electrodes while the charge mobility increases with the increase of surfactant content in the semicon electrode. The diffusion of surfactant molecules into the XLPE was confirmed via a $\mu$-FTIR analysis. It was found through a measurement of spatial charge distributions that the surfactant in the semicon electrodes enhances the injection of negative charge into the XLPE from the electrode. Experimental results and their origins are discussed in detail.

• Korean Journal of Materials Research
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• v.27 no.1
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• pp.32-38
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• 2017

Insulating $TaN_x$ films were grown by plasma enhanced atomic layer deposition using butylimido tris dimethylamido tantalum and $N_2+H_2$ mixed gas as metalorganic source and reactance gas, respectively. Crossbar devices having a $Pt/TaN_x/Pt$ stack were fabricated and their electrical properties were examined. The crossbar devices exhibited temperature-dependent nonlinear I (current) - V (voltage) characteristics in the temperature range of 90-300 K. Various electrical conduction mechanisms were adopted to understand the governing electrical conduction mechanism in the device. Among them, the PooleFrenkel emission model, which uses a bulk-limited conduction mechanism, may successfully fit with the I - V characteristics of the devices with 5- and 18-nm-thick $TaN_x$ films. Values of ~0.4 eV of trap energy and ~20 of dielectric constant were extracted from the fitting. These results can be well explained by the amorphous micro-structure and point defects, such as oxygen substitution ($O_N$) and interstitial nitrogen ($N_i$) in the $TaN_x$ films, which were revealed by transmission electron microscopy and UV-Visible spectroscopy. The nonlinear conduction characteristics of $TaN_x$ film can make this film useful as a selector device for a crossbar array of a resistive switching random access memory or a synaptic device.

• Korean Journal of Materials Research
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• v.34 no.3
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• pp.152-162
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• 2024

In this study, we introduce a novel TiN/Ag embedded TiO₂/FTO resistive random-access memory (RRAM) device. This distinctive device was fabricated using an environmentally sustainable, solution-based thin film manufacturing process. Utilizing the peroxo titanium complex (PTC) method, we successfully incorporated Ag precursors into the device architecture, markedly enhancing its performance. This innovative approach effectively mitigates the random filament formation typically observed in RRAM devices, and leverages the seed effect to guide filament growth. As a result, the device demonstrates switching behavior at substantially reduced voltage and current levels, heralding a new era of low-power RRAM operation. The changes occurring within the insulator depending on Ag contents were confirmed by X-ray photoelectron spectroscopy (XPS) analysis. Additionally, we confirmed the correlation between Ag and oxygen vacancies (V_o). The current-voltage (I-V) curves obtained suggest that as the Ag content increases there is a change in the operating mechanism, from the space charge limited conduction (SCLC) model to ionic conduction mechanism. We propose a new filament model based on changes in filament configuration and the change in conduction mechanisms. Further, we propose a novel filament model that encapsulates this shift in conduction behavior. This model illustrates how introducing Ag alters the filament configuration within the device, leading to a more efficient and controlled resistive switching process.

• Korean Journal of Materials Research
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• v.10 no.9
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• pp.593-600
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• 2000

This paper investigated the conduction path and conduction mechanism in undoped polycrystalline diamond thin films deposited by microwave chemical vapor deposition. The resistances measured by ac impedance spectroscopy with different directions can not be explained by the previously-known surface conduction model. The electrodeposition of Cu and electroetching of Ag experiments showed that the conduction path is the grain boundaries within the diamond films. The electodeposition of Cu with an insulating surface layer further proved that the main conduction path in polycrystalline films in the grain boundaries. The film with high electrical conductivity has low activation energy of 45meV and higher dangling bond density. By considering the results and surface C chemical bonds, the H-C-C-H bonds at surface and in grain boundaries might be the origin of high conductivity in undoped diamond films.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.6
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• pp.44-51
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• 1999

The electrical conduction mechanism of high dielectric $(Ba,Sr)TiO_3$ (BST) thin film capacitor, which is the promising cell capacitor for high density DRAM, was investigated in low field region (<0.2MV/cm). It is known that the current in the low field region consists of dielectric relaxation current and leakage current. The current-time (I-t) measurement technique under the constant voltage was used for extracting successfully each current component. The conduction mechanism of the BST capacitor was deduced from the dependency of the current on the measurement temperature, strength of electric field, the polarity of applied electric field and post annealing process. From these results, it was suggested that the dielectric relaxation current and the leakage current are originated from the redistribution of internally trapped electron by hopping process and Pool-Frenkel conduction mechanism, respectively. It was also concluded that traps causing these two current components are due to oxygen vacancies within the BST film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.516-517
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• 2005

We made use of $Alq_3$ which is the representative light-emitting material. Electric conduction mechanism were analyzed in this paper. We have also measured current density-thickness-voltage characteristics with thickness variation from 60 to 400 nm. We analyzed the low electric and the high electric field in theoretically.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.12
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• pp.2361-2365
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• 2007

Temperature-dependent current-voltage characteristics of Organic Light-Emitting Diodes(OLEDs) were studied. The OLEDs were based on the molecular compounds, N,N'-diphenyl-N,N'-bis(3- methylrhenyi)-1,1'-diphenyl-4,4'-diamine (TPD) as a hole transport and tris(8-hydroxyquinoline) aluminum(Alq3) as an electron transport and emissive material. The current-voltage characteristics were measured in the temperature range of 10[K] and 300[K]. A conduction mechanism in OLEDs was interpreted in terms of tunneling and trap-filled limited current.