• 제목/요약/키워드: compound semiconductor

검색결과 280건 처리시간 0.031초

주기적 표면 구조의 SiO$_2$ 기판을 이용한 ZnO박막의 Graphoepitaxy (Graphoepitaxy of ZnO layers grown on periodic structured Si substrates)

  • 정진우;안현철;이창용;김광희;최석철;이태훈;박승환;정미나;정명훈;이호준;양민;;장지호
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 2005년도 춘계종합학술대회
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    • pp.1042-1045
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    • 2005
  • 주기적인 구조를 갖는 Si (100) 기판을 이용하여 ZnO 박막을 graphoepitaxy 법으로 성장시키기 위한 가능성을 알아 보았다. photolithography에 의해 주기적 구조를 형성시켰으며, ZnO박막은 RF-sputter 법으로 증착하여 시료를 제작 하였다. 제작된 시료는 700$^{\circ}C$${\sim}$900$^{\circ}C$의 수증기 분위기에서 2시간동안 열처리 하여 열처리 온도에 대한 결정성의 변화를 고찰 하였다. 시료의 결정성은 Atomic Force Microscopy (AFM), PL(Photoluminescence)를 통해, 표면과 광학적 특성의 변화를 고찰하였다.

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ZTO 박막의 쇼키접합에 기인하는 자기저항특성 (Magnetoresistance Characteristics due to the Schottky Contact of Zinc Tin Oixide Thin Films)

  • 이향강;오데레사
    • 반도체디스플레이기술학회지
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    • 제18권4호
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    • pp.120-123
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    • 2019
  • The effect of surface plasmon on ZTO thin films was investigated. The phenomenon of depletion occurring in the interface of the ZTO thin film created a potential barrier and the dielectric layer of the depletion formed a non-mass particle called plasmon. ZTO thin film represents n-type semiconductor features, and surface current by plasma has been able to obtain the effect of improving electrical efficiency as a result of high current at positive voltage and low current at negative voltage. It can be seen that the reduction of electric charge due to recombination of electronic hole pairs by heat treatment of compound semiconductors induces higher surface current in semiconductor devices.

적외선 영상기법에 의한 화합물 반도체 에너지갭의 온도계수 측정 방법 (A Method for Evaluating the Temperature Coefficient of a Compound Semiconductor Energy Gap by Infrared Imaging Technique)

  • Kang, Seong-Jun
    • 대한전자공학회논문지SD
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    • 제38권5호
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    • pp.338-346
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    • 2001
  • 온도에 따른 반도체 에너지갭의 변화를 디지털 영상처리를 이용해 직접 측정하는 적외선 영상기법을 제안하고 있다. 본 방법은 반도체 에너지갭의 온도계수를 경제적이고 간단하게 평가할 수 있도록 한다. 본 기법의 핵심 구성 부품은 다색광원기(Polychromator), 프레임 그래버가 내장된 컴퓨터 및 가변 온도 저온유지장치(Cryostat)이다. 방법의 타당성을 검증하기 위해 LEC 방법으로 제조한 GaAs에 시험적으로 행한 실험은 온도 계수가 이론 모델에서 구한 값과 전반적으로 잘 일치함을 보여 주었다.

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GaAs 웨이퍼 본딩모듈의 최적화 설계 (Design Optimization of GaAs Wafer Bonding Module)

  • 지원호;송준엽;강재훈;한승우
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2003년도 춘계학술대회 논문집
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    • pp.860-864
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    • 2003
  • Recently. use of compound semiconductor is widely increasing in the area of LED and RF device. In this study, wafer bonding module is designed and optimized to bond 6 inches device wafer and carrier wafer. Bonding process is performed in vacuum environment and resin is used to bond two wafers. Load spreader and double heating mechanisms are adopted to minimize wafer warpage and void. Structure and heat transfer analyses show the designed mechanisms are very effective in performance improvement.

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Electrochemical Synthesis of Compound Semiconductor Photovoltaic Materials

  • 유봉영;전병준;이동규
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2010년도 춘계학술발표대회
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    • pp.11.1-11.1
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    • 2010
  • As one of the non-vacuum, low temperature fabrication route, electrochemical synthesis has been focused for pursuing the cost-effective pathway to produce high efficiency photovoltaic devices. Especially the availability to form the thin film structure on flexible substrate would be the great advantage of electrochemical process. The successful synthesis of the most favorable absorber materials such as CdTe and CIGS has been reported by many researchers, however, the efficiency of electrochemically synthesized could not exceed that from vacuum process, because of microstructural controllability and compositional variation on devices. In this study, we represent the effect of process parameters on the microstructure and composition of compound semiconductor during the synthesis, and propose the photovoltaic characteristics of electrochemically synthesized solar cells.

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실리사이드 형성 과정에 대한 재 조명 (Reinvestigation on the silicide formation process)

  • 남형진
    • 반도체디스플레이기술학회지
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    • 제7권2호
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    • pp.1-5
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    • 2008
  • Silicide formation process and the formation sequence were investigated in this study. It was postulated that the formation of the second silicide phase involves glass formation between the first silicide phase and Si given that a thin metal film is deposited on a Si substrate. The concentration of glass was assumed to be located where the free energy of the liquid alloy with respect to the first nucleated compound and solid Si (${\Delta}$G') is most negative. It was also mentioned that the glass concentration is close to the composition of the second phase in order to achieve the maximum energy degradation. It was shown that the minimum ${\Delta}$G' concentration can be estimated by interpolating the portion of the liquidus where the liquid alloy is in equilibrium with the two solid constituents, namely the first compound phase and Si, thereby forming a hypothetical eutectic.

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WLP(Wafer Level Package)적용을 위한 SEMC(Sheet Epoxy Molding Compounds)용 Naphthalene Type Epoxy 수지의 경화특성연구 (Cure Characteristics of Naphthalene Type Epoxy Resins for SEMC (Sheet Epoxy Molding Compound) for WLP (Wafer Level Package) Application)

  • 김환건
    • 반도체디스플레이기술학회지
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    • 제19권1호
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    • pp.29-35
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    • 2020
  • The cure characteristics of three kinds of naphthalene type epoxy resins(NET-OH, NET-MA, NET-Epoxy) with a 2-methyl imidazole(2MI) catalyst were investigated for preparing sheet epoxy molding compound(SEMC) for wafer level package(WLP) applications, comparing with diglycidyl ether of bisphenol-A(DGEBA) and 1,6-naphthalenediol diglycidyl ether(NE-16) epoxy resin. The cure kinetics of these systems were analyzed by differential scanning calorimetry with an isothermal approach, and the kinetic parameters of all systems were reported in generalized kinetic equations with diffusion effects. The NET-OH epoxy resin represented an n-th order cure mechanism as like NE-16 and DGEBA epoxy resins, however, the NET-MA and NET-Epoxy resins showed an autocatalytic cure mechanism. The NET-OH and NET-Epoxy resins showed higher cure conversion rates than DGEBA and NE-16 epoxy resins, however, the lowest cure conversion rates can be seen in the NET-MA epoxy resin. Although the NETEpoxy and NET-MA epoxy resins represented higher cure reaction conversions comparing with DGEBA and NE-16 resins, the NET-OH showed the lowest cure reaction conversions. It can be figured out by kinetic parameter analysis that the lowest cure conversion rates of the NET-MA epoxy resin are caused by lower collision frequency factor, and the lowest cure reaction conversions of the NET-OH are due to the earlier network structures formation according to lowest critical cure conversion.