• Journal of the Korea Institute of Military Science and Technology
• /
• v.1 no.1
• /
• pp.114-127
• /
• 1998

A user friendly computer code(EMCOMST; Electro-Magnetic response for COMposite STructures) was developed which provides with computations of the response characteristics such as reflectance and transmittance to the incident wave angles, frequencies, composite thicknesses, ply orientations, and types of backplate as the linearly polarized transverse electro-magnetic wave is emitted to the advanced composite structures. In this investigation were reviewed the electromagnetic characteristics of the continuous orthotropic fiber-reinforced organic matrix composites with or without ferrite fillers, which are actively applied to low-weight and high-strength aircraft structures. Also were calculated the response of the three layered compound structures which have appropriately stacked above-mentioned materials as transmitting layer, absorbing layer, reflection layer, respectively under the specific thickness constraints for mechanical strength design requirements. For the composite structures presented in this study, minimum reflectance value less than -5㏈ can be obtained in the frequency range of 4 to 12 ㎓. In addition, analysis of structures attached isotropic radar absorbing materials(RAM) is facilitated by putting the material properties in the material input card entries adequately.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.25 no.8
• /
• pp.1131-1139
• /
• 2001

Experimental results are presented, which describe the effect of blowing ratio on film cooling from two rows of holes with opposite orientation angles. The inclination angle is fixed at 35°, and the orientation angles are set to be 45°for the downstream row, and -45°for the upstream row. The studied blowing ratios are 0.5, 1.0 and 2.0. The boundary layer temperature distributions are measured using thermocouple at two downstream locations. Detailed adiabatic film cooling effectiveness and heat transfer coefficient distributions are measured with TLC(Thermochromic Liquid Crystal). The adiabatic film cooling effectiveness and heat transfer coefficient distributions are discussed in connection with the injectant behaviors inferred from the boundary layer temperature distributions. Film cooling performance, represented by heat flux is evaluated from the adiabatic film cooling effectiveness and heat transfer coefficient data. The results show that the investigated geometry provides improved film cooling performance at the high blowing ratios of 1.0 and 2.0.

• Korean Journal of Materials Research
• /
• v.18 no.6
• /
• pp.294-297
• /
• 2008

In this paper, a novel non-vacuum technique is described for the fabrication of a $CuInSe_2$ (CIS) absorber layer for thin film solar cells using a low-cost precursor solution. A solution containing Cu- and Inrelated chemicals was coated onto a Mo/glass substrate using the Doctor blade method and the precursor layer was then selenized in an evaporation chamber. The precursor layer was found to be composed of CuCl crystals and amorphous In compound, which were completely converted to chalcopyrite CIS phase by the selenization process. Morphological, crystallographic and compositional analyses were performed at each step of the fabrication process by SEM, XRD and EDS, respectively.

• Journal of the Korean Society for Precision Engineering
• /
• v.22 no.6 s.171
• /
• pp.144-151
• /
• 2005

Spin coater is regarded as a major module rotating at high speed to be used build up polymer resin thin film layer fur bonding process of GaAs wafer. This module is consisted of spin unit for spreading uniformly, align device, resin spreading nozzle and et. al. Specially, spin unit which is a component of module can cause to vibrate and finally affect to the uniformity of polymer resin film layer. For the stability prediction of rotation velocity and uniformity of polymer resin film layer, it is very important to understand the dynamic characteristics of assembled spin coater module and the dynamic response mode resulted from rotation behavior of spin chuck. In this paper, stress concentration mode and the deformed shape of spin chuck generated due to angular acceleration process are presented using analytical method for evaluation of structural safety according to the revolution speed variation of spin unit. And also, deformation form of GaAs wafer due to dynamic behavior of spin chuck is presented fur the comparison of former simulated results.

• Journal of the Korean institute of surface engineering
• /
• v.27 no.5
• /
• pp.292-302
• /
• 1994

Alloy deposits of 80Sn-20Pb, electroplated on Cu-based leadframe alloy from an organic sulfonate bath were aged at $150^{\circ}C$ to form intermetallic phases between substrate and deposit, and effects of the deposit morphology, influenced by deposition conditions, on the fracture resistance of the 80Sn-20Pb deposit aged at $150^{\circ}C$ were examined. The growth rate of intermetallic compound layer on aging depended on the microstructure of deposit ; it was fastest in deposit formed using pulse current in bath without grain refining additive, but slowest in deposit formed using dc current in bath containing grain refining additive in spite of similar structure with equivalent grain size. The grain refining additive incorporated in electrodeposit appears to inhibit diffusion of atoms on aging, resulting in slow growth of intermetallic layer in the thickness direction but substantial growth in the lateral one. Density of surface cracks that were occurring when samples were subjected to the $90^{\circ}$-bending test increased with increasing the thickness of intermatallic layer on aging. For the same aged samples, the surface crack density of the sample electrodeposited from a bath containing the grain refining additive was the least due to the inhibiting effect of the additive incorporated into the deposit during electrolysis on atomic diffusion.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.04c
• /
• pp.15-17
• /
• 2008

$CuInS_2$ thin films were synthesized by sulpurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furance annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}[cm^{-3}]$, 312.502[$cm^2/V{\cdot}s$] and $2.36{\times}10^{-2}[{\Omega}{\cdot}cm]$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.11a
• /
• pp.261-262
• /
• 2006

$CuInS_2$ thin films were synthesized by sulpurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furance annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1:1:2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}[cm^{-3}]$, 312.502 [$cm^2/V{\cdot}s$] and $2.36{\times}10^{-2}[{\Omega}{\cdot}cm]$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1993.05a
• /
• pp.22-27
• /
• 1993

we prepared 70K new BiPbAgSrCaCuO superconductor used diffusion of dual layer which composed of SrCaCuO and BiPbAgCuO compound. This method is used permeation and diffusion on partial melting point of BiPbAgCuO compound. Samples were analyzed by means of X-ray diffraction analysis, Thermal analysis, critical temperature and scanning electron microscopy. It was found that the best results were obtained for spread volume (A:B=1:0.6) and sintring time 210hours.

• Journal of the Microelectronics and Packaging Society
• /
• v.11 no.1
• /
• pp.1-6
• /
• 2004

The requirements for harsh environment electronic controllers in automotive applications have been steadily becoming more and more stringent. Electronic substrate technologists have been responding to this challenge effectively in an effort to meet the performance, reliability and cost requirements. An effect of the plasma cleaning at the ECM(Engine Control Module) alumina substrate and the intermetallic compound layer between Sn-37wt%Pb solder and pad joints after reflow soldering has been studied. Organic residual carbon layer was removed by the substrate plasma cleaning. So the interfacial adhesive strength was enhanced. As a result of AFM measurement, conductor pad roughness were increased from 304 nm to 330 nm. $Cu_6/Sn_5$ formed during initial reflow process at the interface between TiWN/Cu pad and solder grew by the succeeding reflow process, so the grains became coarse. A cellular-shaped $Ag_3Sn$ was observed at the interface between Ag-Pd conductor pad and solder. The diameters of the $Ag_3Sn$ grains ranged from about 0.1∼0.6 $\mu\textrm{m}$. And a needle-shaped was also observed at the inside of the solder.

• Journal of the Microelectronics and Packaging Society
• /
• v.20 no.4
• /
• pp.59-63
• /
• 2013

In this paper, the impact of the copper densities of substrate layers on IC package warpage is studied experimentally and numerically. The substrate strips used in this study contained two metal layers, with the metal densities and patterns of these two layers varied to determine their impacts. Eight legs of substrate strips were prepared. Leg 1 to leg 5 were prepared with a HD (high density) type of strip and leg 6 to leg 8 were prepared with UHD (ultra high density) type of strip. The top copper metal layer was designed to feature meshed patterns and the bottom copper layer was designed to feature circular patterns. In order to consider the process factors, the warpage of the substrate bottom was measured step by step with the following manufacturing process: (a) bare substrate, (b) die attach, (c) applying mold compound (d) and post reflow. Furthermore, after the post reflow step, the substrate strips were diced to obtain unit packages and the warpage of the unit packages was measured to check the warpage trends and differences. The experimental results showed that the warpage trend is related to the copper densities. In addition to the experiments, a Finite Element Modeling (FEM) was used to simulate the warpage. The nonlinear material properties of mold compound, die attach, solder mask, and substrate core were included in the simulation. Through experiment and simulation, some observations were concluded.