• Transactions on Electrical and Electronic Materials
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• v.15 no.3
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• pp.144-148
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• 2014

The purpose of this research is to utilizing the Tetrax$^{(R)}$ balance measuring instrument in order to analyze the postural balance of males and females in their 30 s diagnosed with chronic lower back pain who have followed a 12-week rehabilitation exercise program. The research also examines the effects on any change in back pain level. In terms of the variables in this research, postural balance (left/right, front/back, postural balance) and pain level change (0~100 mm) were measured. Pre-/post-experimental differences were assessed using the paired-t test. In addition, to identify any gender gap, we set the preliminary scores as a covariate and ran the Analysis of Covariance. Statistical significance (a) herein was set at 0.05. As a result of this research experiment, the left/right, front/back, and overall postural balance were found to increase in both the male and female cases, but with no statistical significance or gender gap. However, both males and females showed a significant decrease in their back pain levels. These findings demonstrate the necessity of continuing clinical research based on the Tetrax$^{(R)}$ equipment for scientific evaluation of the effects of rehabilitation exercises on chronic lower back pain patients and their balancing ability.

• Journal of Welding and Joining
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• v.19 no.4
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• pp.384-390
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• 2001

There have been many problems due to deformation in industry field. Especially, it is severe in parts with small size and thin thickness and in products that must have excellent airtightness and anti-noise. The countermeasures for this deformation in field have mainly been dependent on the rule of trial and error by operator's experience because of productivities. Systematic study about this product with deformation is also insufficient that deformation is complex problem with shape, size, material of product, joining method and conditions, etc.. It is efficient to apply CAE technique without influence on productivity to this problem. There is, however much difference between the result analyzed by CAE and appearances in working field because of the insufficiency of communication between simulator and worker and of sensing data for boundary condition in analysis. In this study, to solve this deformation problem, we intend to make a simulation model that is adapted from working conditions by tuning and feedback between sensing data and simulation results. This paper include temperature monitoring and make a heat transfer model using sensing data in product as previous step for deformation analysis. The heat transfer analysis of shrinkage fit process is considerably difficult due to contact heat transfer between case and core. To solve this contact problem, gap element is used in present study.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.2
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• pp.259-267
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• 2000

This paper presents the method for an estimation of discharge current waveshapes in short gap discharge by radiated electromagnetic fields. The method of current waveform estimation described is using the one antenna method(single field method) and two antennal method(complex field method) with a measured electric or magnetic fields at given field point by a time domain antenna. In order to verify the availability of the estimation theory, the discharge current waveshape estimation was performed by one and two antenna methods using the measured electric fields of Wilson & Ma and compared with experiments.

• Journal of Ginseng Research
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• v.13 no.1
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• pp.71-78
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• 1989

The structural changes in the pericarp of Panax ginseng fruit cells are studied during maturation periods. The pericarp can be divided into exocarp, mesocarp and endocarp. The exocarp consists of one layer of epidermal cells which is covered by a thin cuticle and hypodermal cells. A central vacuole and peripheral cytoplasm are observed in the exocarp and mesocarp. Also, irregular wall arrangement are observed during the differentiation. The endocarp is clearly marked off from the others by secondaw wall thickening and lignification. Secretory materials produced by the Golgi complex and rough endoplasmic reticulum vesicles appear to accumulated in the cell wall. These secretory materials are considered major components of the seed coat during the differentiation.

• The Journal of Korean Academy of Prosthodontics
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• v.58 no.3
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• pp.239-243
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• 2020

When the marginal fit of fixed dental prosthesis decreases, biological and technical complications, such as plaque accumulation, periodontal disease, hypersensitivity, components fracture, cement loss, can happen. The complications affect the long-term success and survival of prostheses. This case report describes a clinical procedure to minimize the marginal gap of implant-supported screw-and-cement retained prosthesis by removing prosthesis-abutment complex and burnishing the interface area. The marginal gap was measured before and after the burnishing using a stereomicroscope and compared. This technique improves the marginal fit, thereby contributing the longevity of the prosthesis.

• Journal of Communications and Networks
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• v.13 no.5
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• pp.472-480
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• 2011

In this paper, we investigate two new candidate transmission schemes, non-orthogonal frequency reuse (NOFR) and beam-hopping (BH). They operate in different domains (frequency and time/space, respectively), and we want to know which domain shows overall best performance. We propose a novel formulation of the signal-to-interference plus noise ratio (SINR) which allows us to prove the frequency/time duality of these schemes. Further, we propose two novel capacity optimization approaches assuming per-beam SINR constraints in order to use the satellite resources (e.g., power and bandwidth) more efficiently. Moreover, we develop a general methodology to include technological constraints due to realistic implementations, and obtain the main factors that prevent the two technologies dual of each other in practice, and formulate the technological gap between them. The Shannon capacity (upper bound) and current state-of-the-art coding and modulations are analyzed in order to quantify the gap and to evaluate the performance of the two candidate schemes. Simulation results show significant improvements in terms of power gain, spectral efficiency and traffic matching ratio when comparing with conventional systems, which are designed based on uniform bandwidth and power allocation. The results also show that BH system turns out to show a less complex design and performs better than NOFR system specially for non-real time services.

• Structural Engineering and Mechanics
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• v.89 no.1
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• pp.61-75
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• 2024

Strengthening of hollow structural sections using through-bolts is a cost-effective and straightforward approach. It's a versatile method that can be applied during both design and service phases, serving as a non-disruptive and budget-friendly retrofitting solution. Existing research on axially loaded hollow sections T-joints has demonstrated that this technique can amplify the joint strength by 50%, where single bolt could enhance the strength of the joint by 35%. However, there's a gap in understanding their use for K-joints. As the behavior of K-joints is more complex, and they are widely existent in structures, this study aims to bridge that gap by conducting comprehensive parametric study using finite element analysis. Numerical investigation was conducted to evaluate the effect of through bolts on K-joints focusing on using single through bolt to achieve most of the strengthening effect. A full-scale parametric model was developed to investigate the effect of various geometric parameters of the joint. This study concluded the existence of optimal bolt location to achieve the highest strength gain for the joint. Moreover, a rigorous statistical analysis was conducted on the data to propose design equations to predict optimal bolt location and the corresponding strength gain implementing the verified by finite element models.

• Geomechanics and Engineering
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• v.38 no.4
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• pp.397-408
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• 2024

Buried box culverts are crucial elements of transportation infrastructure. However, their behavior under foundation loads is not well understood, indicating a significant gap in existing research. This study aims to bridge this gap by conducting a detailed numerical analysis using the Finite Element Method and Abaqus software. The research evaluates the behavior of buried box culverts by examining their interaction with surrounding soil and the pressures from surface foundation loads. Key variables such as embedment depth, culvert wall thickness, concrete material properties, foundation pressure, foundation width, soil elastic modulus, and friction angle are altered to understand their combined effects on structural response. The methodology employs a validated 2D numerical model under plane strain conditions. Parametric studies highlight the critical role of culvert depth (H) in influencing earth pressure and bending moments. Foundation pressure and width demonstrate complex interdependencies affecting culvert behavior. Variations in culvert materials' elastic modulus show minimal impact. It was found that the lower wall of the buried culvert experiences higher average pressure compared to the other two walls, due to the combined effects of the culvert's weight and down drag forces on the side walls. Furthermore, while the pressure distribution on the top and bottom walls is parabolic, the pressure on the side walls follows a different pattern, differing from that of the other two walls.

• Korean Journal of Materials Research
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• v.3 no.2
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• pp.121-130
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• 1993

The GaP crystals were grown by synthesis solute diffusion method and its properties were investigated. High quality single crystals were obtained by pull-down the crystal growing ampoule with velocity of 1.75mm/day. Etch pits density along vertical direction of ingot was increased from 3.8 ${\times}{10^4}$c$m^{-2}$ of the first freeze to 2.3 ${\times}{10^5}$c$m^2$ of the last freeze part. The carrier concentration and mobilities at room temperature were measured to 197.49cc$m^2$/V.sec and 6.75 ${\times}{10^{15}}$c$m^{-3]$, respectively. The temperature dependence of optical energy gap was empirically fitted to $E_g$(T)=[2.3383-(6.082${\times}{10^{-4}}$)$T^2$/(373. 096+TJeV. Photoluminescence spectra measured at low temperature were consist with sharp line-spectra near band-gap energy due to bound-exciton and phonon participation in band edge recombination process. Zn-diffusion depth in GaP was increased with square root of diffusion time and temperature dependence of diffusion coefficient was D(Tl = 3.2 ${\times}{10^3}$exp( - 3.486/$k_{\theta}$T)c$m^2$/sec. Electroluminescence spectra of p-n GaP homojunction diode are consisted with emission at 630nm due to recombination of donor in Zn-O complex center with shallow acceptors and near band edge emission at 550nm. Photon emission at current injection level of lower than 100m A was due to the band-filling mechanism.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.391-392
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• 2012

Graphene is a perfectly two-dimensional (2D) atomic crystal which consists of sp2 bonded carbon atoms like a honeycomb lattice. With its unique structure, graphene provides outstanding electrical, mechanical, and optical properties, thus enabling wide variety of applications including a strong potential to extend the technology beyond the conventional Si based electronic materials. Currently, the widespread application for electrostatically switchable devices is limited by its characteristic of zero-energy gap and complex process in its synthesis. Several groups have investigated nanoribbon, strained, or nanomeshed graphenes to induce a band gap. Among various techniques to synthesize graphene, chemical vapor deposition (CVD) is suited to make relatively large scale growth of graphene layers. Direct growth of graphene on hexagonal boron nitride (h-BN) using CVD has gained much attention as the atomically smooth surface, relatively small lattice mismatch (~1.7％) of h-BN provides good quality graphene with high mobility. In addition, induced band gap of graphene on h-BN has been demonstrated to a meaningful value about ~0.5 eV.[1] In this paper, we report the synthesis of grpahene / h-BN bilayer in a chemical vapor deposition (CVD) process by controlling the gas flux ratio and deposition rate with temperature. The h-BN (99.99％) substrate, pure Ar as carrier gas, and $CH_4$ are used to grow graphene. The number of graphene layer grown on the h-BN tends to be proportional to growth time and $CH_4$ gas flow rate. Epitaxially grown graphene on h-BN are characterized by scanning electron microscopy, atomic force microscopy, and Raman spectroscopy.