• Advances in nano research
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• v.3 no.2
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• pp.55-66
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• 2015

Crystalline $Ce^{3+}$ co-doped $LaPO_4$:RE ($RE=Dy^{3+}$, $Tb^{3+}$, $Eu^{3+}$, $Sm^{3+}$) and mix doped rare earth ions of $Dy^{3+}$, $Tb^{3+}$ and $Eu^{3+}$ were prepared by the polyol method at $150^{\circ}C$. Strongly enhance luminescence intensity is obtained with the co-doping of $Ce^{3+}$ with $LaPO_4$:$Dy^{3+}$ and $LaPO_4$:$Tb^{3+}$ due to charge transfer (CT) occurring from $Ce^{3+}$ to $Dy^{3+}$ and $Ce^{3+}$ to $Tb^{3+}$, where as there is no significant changes in luminescence intensity of $Ce^{3+}$ co-doped $Eu^{3+}$ and $Sm^{3+}$ doped $LaPO_4$ samples. The luminescence color can be tuned from green to white by varying the excitation wavelength for the mix ions $Ce^{3+}$, $Dy^{3+}$, $Tb^{3+}$ and $Eu^{3+}$ doped with $LaPO_4$.

• Journal of Magnetics
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• v.11 no.1
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• pp.51-54
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• 2006

Variation of magnetic properties through Cr substitution for Co in inverse-spinel $CoFe_2O_4$ has been investigated by vibrating-sample magnetometry (VSM) and conversion electron $M\ddot{o}ssbauer$ spectroscopy (CEMS). $Cr_{x}Co_{1-x}Fe_2O_4$ samples were prepared as thin films by a sol-gel method. The lattice constant of the $Cr_{x}Co_{1-x}Fe_2O_4$ samples was found to remain unchanged, explainable in terms of a reduction of tetrahedral $Fe^{3+}$ ion to $Fe^{2+}$ due to substitution of $Cr^{3+}$ ion into octahedral $Co^{2+}$ site. The existence of the tetrahedral $Fe^{2+}$ ions in $Cr_{x}Co_{1-x}Fe_2O_4$ was confirmed by CEMS analysis. Room-temperature magnetic hysteresis curves for the $Cr_{x}Co_{1-x}Fe_2O_4$ films measured by VSM revealed that the saturation magnetization $M_s$ increases by Cr doping. The $M_s$ is maximized when x = 0.1 and decreases for higher x but is still bigger than that of $CoFe_2O_4$. The increase of $M_s$ can be explained partly by the reduction of the tetrahedral $Fe^{3+}$ ion to $Fe^{2+}$.

• Korean Journal of Materials Research
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• v.20 no.6
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• pp.326-330
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• 2010

$CoSb_3$ Skutterudites materials have high potential for thermoelectric application at mid-temperature range because of their superior thermoelectric properties via control of charge carrier density and substitution of foreign atoms. Improvement of thermoelectric properties is expected for the ternary solid solution developed by substitution of foreign atoms having different valances into the $CoSb_3$ matrix. In this study, ternary solid solutions with a stoichiometry of $Co_{1-x}Ni_xSb_3$ x = 0.01, 0.05, 0.1, 0.2, $CoSb_{3-y}Te_y$, y = 0.1, 0.2, 0.3 were prepared by the Spark Plasma Sintering (SPS) system. Before the SPS synthesis, the ingots were synthesized by vacuum induction melting and followed by annealing. For phase analysis X-ray powder diffraction patterns were checked. All the samples were confirmed as single phase; however, with samples that were more doped than the solubility limit some secondary phases were detected. All the samples doped with Ni and Te atoms showed a negative Seebeck coefficient and their electrical conductivities increased with the doping amount up to the solubility limit. For the samples prepared by SPS the maximum value for dimensionless figure of merit reached 0.26, 0.42 for $Co_{0.9}Ni_{0.1}Sb_3$, $CoSb_{2.8}Te_{0.2}$ at 690 K, respectively. These results show that the SPS method is effective in this system and Ni/Te dopants are also effective for increasing thermoelectric properties of this system.

• Korean Journal of Materials Research
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• v.25 no.6
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• pp.300-304
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• 2015

Nanorod ZnO and spherical nano ZnO for gas sensors were prepared by hydrothermal reaction method and hydrazine method, respectively. The nano-ZnO gas sensors were fabricated by a screen printing method on alumina substrates. The gas sensing properties were investigated for hydrocarbon gas. The effects of Co concentration on the structural and morphological properties of the nano ZnO:Co were investigated by X-ray diffraction and scanning electron microscope (SEM), respectively. XRD patterns revealed that nanorod and spherical ZnO:Co with a wurtzite structure were grown with (100), (002), (101) peaks. The sensitivity of nanorod and spherical ZnO:Co sensors was measured for 5 ppm $CH_4$ and $CH_3CH_2CH_3$ gas at room temperature by comparing the resistance in air with that in target gases. The highest sensitivity to the $CH_4$ and $CH_3CH_2CH_3$ gas of spherical nano ZnO:Co sensors was observed at Co 6 wt%. The spherical nano ZnO:Co sensor exhibited a higher sensitivity to hydrocarbon gas than nanorod ZnO.

• Journal of Ceramic Processing Research
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• v.19 no.6
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• pp.499-503
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• 2018

In this paper, cobalt embedded in nitrogen and sulfur co-doped carbon nanotubes (CoNSTs) were synthesized for oxygen reduction reaction (ORR) catalysts. The CoNSTs were prepared through a facile heat treatment method without any templates. Different amounts of the metal salt were employed to examine the physicochemical and electrochemical properties of the CoNSTs. The CoNSTs showed the bamboo-like tube morphology with the encased Co nanoparticles in the tubes. Through the x-ray photoelectron spectroscopy analysis, the catalysts exhibited different chemical states of the nitrogen and sulfur species. As a result, the CoNST performed high activity toward the ORR in an acidic condition with the onset potential of 0.863 V (vs. reversible hydrogen electrode). It was clearly demonstrated from the electrochemical characterizations that the quality of the nitrogen and sulfur species significantly influences the ORR activity rather than the total amount of the dopants.

• Clean Technology
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• v.24 no.1
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• pp.35-40
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• 2018

$Co_3O_4$ catalysts for $N_2O$ decomposition were prepared by co-precipitation method. Ce and Zr were added during the preparation of the catalyst as promoter with the molar ratio (Ce or Zr) / Co = 0.05. Also, 1 wt% $K_2CO_3$ was doped to the prepared catalyst with impregnation method to investigate the effect of K on the catalyst performance. The prepared catalysts were characterized with SEM, BET, XRD, XPS and $H_2-TPR$. The $Co_3O_4$ catalyst exhibited a spinel crystal phase, and the addition of the promoter increased the specific surface area and reduced the particle and crystal size. It was confirmed that the doping of K improves the catalytic activity by increasing the concentration of $Co^{2+}$ in the catalyst which is an active site for catalytic reaction. The catalytic activity tests were carried out at a GHSV of $45,000h^{-1}$ and a temperature range of $250{\sim}375^{\circ}C$. The K-impregnated $Co_3O_4$ catalyst showed much higher activity than $Co_3O_4$ catalysts with promoter only. It is found that the K-impregnation increased the concentration of $Co^{2+}$ more than the added of promoter did, and lowered the reduction temperature to a great extent.

• Journal of Sensor Science and Technology
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• v.18 no.1
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• pp.48-53
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• 2009

$Eu^{2+}$-doped ${SrAl_2}{O_4}$ and $Eu^{2+}$, $Dy^{3+}$ co-doped ${SrAl_2}{O_4}$ phosphors have been synthesized by conventional solid state method. Photocurrent properties of $Eu^{2+}$ doped ${SrAl_2}{O_4}$ and $Eu^{2+}$, $Dy^{3+}$ co-doped ${SrAl_2}{O_4}$ phosphors, in order to elucidate $Dy^{3+}$ co-doping effect, during and after ceasing ultraviolet-ray (UV) irradiation have been investigated. The photocurrent of $Eu^{2+}$, $Dy^{3+}$ co-doped ${SrAl_2}{O_4}$ phosphors during UV irradiation was 4-times lower than that of $Eu^{2+}$-doped ${SrAl_2}{O_4}$ during UV irradiation, and 7-times higher than that of $Eu^{2+}$-doped ${SrAl_2}{O_4}$ after ceasing UV irradiation. The photocurrent results indicated that holes of charge carriers captured in hole trapping center during the UV irradiation and liberated after-glow process, and made clear that $Dy^{3+}$ of co-dopant acted as a hole trap. The photocurrent of ${SrAl_2}{O_4}$ showed a good proportional relationship to UV intensity in the range of $1{\sim}5mW/cm^2$, and $Eu^{2+}$-doped ${SrAl_2}{O_4}$ was confirmed to be a possible UV sensor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.456-456
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• 2009

Boron doping on an n-type Si wafer is requisite process for IBC (Interdigitated Back Contact) solar cells. Fiber laser annealing is one of boron doping methods. For the boron doping, uniformly coated or deposited film is highly required. Plasma enhanced chemical vapor deposition (PECVD) method provides a uniform dopant film or layer which can facilitate doping. Because amorphous silicon layer absorption range for the wavelength of fiber laser does not match well for the direct annealing. In this study, to enhance thermal affection on the existing p-a-Si:H layer, a ${\mu}c$-Si:H intrinsic layer was deposited on the p-a-Si:H layer additionally by PECVD. To improve heat transfer rate to the amorphous silicon layer, and as heating both sides and protecting boron eliminating from the amorphous silicon layer. For p-a-Si:H layer with the ratio of $SiH_4$ : $B_2H_6$ : $H_2$ = 30 : 30 : 120, at $200^{\circ}C$, 50 W, 0.2 Torr for 30 minutes, and for ${\mu}c$-Si:H intrinsic layer, $SiH_4$ : $H_2$ = 10 : 300, at $200^{\circ}C$, 30 W, 0.5 Torr for 60 minutes, 2 cm $\times$ 2 cm size wafers were used. In consequence of comparing the results of lifetime measurement and sheet resistance relation, the laser condition set of 20 ~ 27 % of power, 150 ~ 160 kHz, 20 ~ 50 mm/s of marking speed, and $10\;{\sim}\;50 {\mu}m$ spacing with continuous wave mode of scanner lens showed the correlation between lifetime and sheet resistance as $100\;{\Omega}/sq$ and $11.8\;{\mu}s$ vs. $17\;{\Omega}/sq$ and $8.2\;{\mu}s$. Comparing to the singly deposited p-a-Si:H layer case, the additional ${\mu}c$-Si:H layer for doping resulted in no trade-offs, but showed slight improvement of both lifetime and sheet resistance, however sheet resistance might be confined by the additional intrinsic layer. This might come from the ineffective crystallization of amorphous silicon layer. For the additional layer case, lifetime and sheet resistance were measured as $84.8\;{\Omega}/sq$ and $11.09\;{\mu}s$ vs. $79.8\;{\Omega}/sq$ and $11.93\;{\mu}s$. The co-existence of $n^+$layeronthesamesurfaceandeliminating the laser damage should be taken into account for an IBC solar cell structure. Heavily doped uniform boron layer by fiber laser brings not only basic and essential conditions for the beginning step of IBC solar cell fabrication processes, but also the controllable doping concentration and depth that can be established according to the deposition conditions of layers.

• Journal of the Korean Ceramic Society
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• v.53 no.3
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• pp.338-342
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• 2016

ZnO thin film co-doped with F and Al was prepared on a glass substrate via simple non-alkoxide sol-gel spin coating. For a fixed F concentration, the addition of Al co-dopant was shown to reduce the resistivity mainly due to an increase in electrical carrier density compared with ZnO doped with F only, especially after the second post-heat-treatment in a reducing environment. There was no effective positive contribution to the reduction in resistivity due to the mobility enhancement by the addition of Al co-dopant. Optical transmittance of the ZnO thin film co-doped with F and Al in the visible light domain was shown to be higher than that of the ZnO thin film doped with F only.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.4-6
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• 2003

We have developed the active matrix OLED displays with a high efficiency red emission material which uses an emitting assist (EA) dopant system. The EA dopant (rubrene) did not itself emit but assisted the energy transfer from the host ($Alq_s$) to the red emitting dopant(DCM2). A stable red emission (chromaticity coordinates: x=0.64, y=0.36) was obtained in this cell within the luminance range of 100 - 4000 $cd/m^2$ By using EA dopant system, we can realize the reduction of the power consumption of the OLED display..