• Journal of Environmental Science International
• /
• v.27 no.11
• /
• pp.967-974
• /
• 2018

In this study, we evaluated the photocatalytic oxidation efficiency of aromatic volatile hydrocarbons by using $WO_3$-doped $TiO_2$ nanotubes (WTNTs) under visible-light irradiation. One-dimensional WTNTs were synthesized by ultrasonic-assisted hydrothermal method and impregnation. XRD analysis revealed successful incorporation of $WO_3$ into $TiO_2$ nanotube (TNT) structures. UV-Vis spectra exhibited that the synthesized WTNT samples can be activated under visible light irradiation. FE-SEM and TEM images showed the one-dimensional structure of the prepared TNTs and WTNTs. The photocatalytic oxidation efficiencies of toluene, ethylbenzene, and o-xylene were higher using WTNT samples than undoped TNT. These results were explained based on the charge separation ability, adsorption capability, and light absorption of the sample photocatalysts. Among the different light sources, light-emitting-diodes (LEDs) are more highly energy-efficient than 8-W daylight used for the photocatalytic oxidation of toluene, ethylbenzene, and o-xylene, though the photocatalytic oxidation efficiency is higher for 8-W daylight.

• Clean Technology
• /
• v.29 no.4
• /
• pp.255-261
• /
• 2023

Power semiconductors are semiconductors used for power conversion, transformation, distribution, and control. Recently, the global demand for high-voltage power semiconductors is increasing across various industrial fields, and optimization research on high-voltage IGBT components is urgently needed in these industries. For high-voltage IGBT development, setting the resistance value of the wafer and optimizing key unit processes are major variables in the electrical characteristics of the finished chip. Furthermore, the securing process and optimization of the technology to support high breakdown voltage is also important. Etching is a process of transferring the pattern of the mask circuit in the photolithography process to the wafer and removing unnecessary parts at the bottom of the photoresist film. Ion implantation is a process of injecting impurities along with thermal diffusion technology into the wafer substrate during the semiconductor manufacturing process. This process helps achieve a certain conductivity. In this study, dry etching and wet etching were controlled during field ring etching, which is an important process for forming a ring structure that supports the 3.3 kV breakdown voltage of IGBT, in order to analyze four conditions and form a stable body junction depth to secure the breakdown voltage. The field ring ion implantation process was optimized based on the TEG design by dividing it into four conditions. The wet etching 1-step method was advantageous in terms of process and work efficiency, and the ring pattern ion implantation conditions showed a doping concentration of 9.0E13 and an energy of 120 keV. The p-ion implantation conditions were optimized at a doping concentration of 6.5E13 and an energy of 80 keV, and the p+ ion implantation conditions were optimized at a doping concentration of 3.0E15 and an energy of 160 keV.

• Clean Technology
• /
• v.21 no.3
• /
• pp.200-206
• /
• 2015

In order to investigate the effect of cerium oxide addition, Cu-ZnO-CeO₂ catalysts were prepared using co-precipitation method for water gas shift (WGS) reaction. A series of Cu-ZnO-CeO₂ catalyst with fixed Cu Content (50 wt%, calculated as CuO) and a given ceria content (e.g., 0, 5, 10, 20, 30, 40 wt%, calculated as CeO₂) were tested for catalytic activity at a GHSV of 95,541 h^-1, and a temperature range of 200 to 400 ℃. Cu-ZnO-CeO₂ catalysts were characterized by using BET, SEM, XRD, H₂-TPR, and XPS analysis. Varying composition of Cu-ZnO-CeO₂ catlysts led the difference characteristics such as Cu dispersion, and binding energy. The optimum 10 wt% doping of cerium facilitated catalyst reduction at lower temperature and improved the catalyst performance greatly in terms of CO conversion. Cerium oxide added catalyst showed enhanced activities at higher temperature when it compared with the catalyst without cerium oxide. Consequently, ceria addition of optimal composition leads to enhanced catalytic activity which is attributed to enhanced Cu dispersion, lower binding energy, and hindered Cu metal agglomeration.

• Korean Journal of Materials Research
• /
• v.10 no.11
• /
• pp.778-783
• /
• 2000

Effects of the $Al_2$O$_3$surface protective layer, deposited on the SnO$_2$sensing layer by aerosol flame deposition (AFD) method, on the sensing properties of SnO$_2$thin film ags sensors were investigated.Effects of Pt doping to the $Al_2$O$_3$surface protective layer on the selectivity of CH$_4$ gas were also investigated. 0.3$\mu\textrm{m}$ thick SnO$_2$thin sensing layers on Pt electrodes were prepared by R.F. magnetron sputtering with R.F. power of 50 W, at working pressure of 4mTorr, and at 20$0^{\circ}C$ for 30 min. $Al_2$O$_3$surface protective layers on SnO$_2$layers were prepared by AFD using a diluted aluminum nitrade (Al(NO$_3$).9$H_2O$) solution. The sensitivity of CO gas in the SnO$_2$gas sensor with an $Al_2$O$_3$surface protective layer was significantly decreased. But that of CH$_4$gas remained almost same with pure SnO$_2$gas sensor. This result shows that the selectivity of CH$_4$gas is increased because of the $Al_2$O$_3$surface protective layer. In the case of SnO$_2$gas sensors with Pt-doped $Al_2$O$_3$surface protective layers, low sensing property to CO gas and high sensing property to CH$_4$were observed. This results in the increasing of selectivity of CH$_4$gas selectivity are discussed.

• Applied Chemistry for Engineering
• /
• v.5 no.5
• /
• pp.764-771
• /
• 1994

Electrochemical synthesis of conductive polypyrrole films was carried out in nucleophilic solvent containing p-toluenesulfonic acid or bezensulfonic acid as supporting electrolyte and dopant. Also characteristics of degradation and improvement of mechanical properties were studied. The conductivity, tensile strength and elongation of the films obtained in dimethyformamide/p-toluenesulfonic acid had the highest value of 10-40S/cm, $25N/mm^2$ and 10%, respectively. The optimum condition of electrochemical synthesis was $2mA/cm^2$ for constant current method and 0.9V for constant potential method containing 0.5M pyrrole and 0.5M p-TSA. The obtained films showed good stability in air and electrode characteristics of secondary battery by reversibility in doping and undoping. The degradation process was 1st order reaction at various temeprature. The activation energy and rate constant of degradation reaction were $1.01JK^{-1}mol^{-1}$ and $3.1{\times}10^{-7}min^{-1}$ respectively at $25^{\circ}C$. For the improvement of mechanical properties, composition of polypyrrole films with various host polymer were investigated and increase of tensile strength and elongation was confirmed.

• Clean Technology
• /
• v.18 no.2
• /
• pp.177-182
• /
• 2012

Mesoporous anatase $TiO_2$ nanoparticles have been synthesized by a hydrothermal method using a tri-block copolymer as a soft template. The resulting $TiO_2$ materials have a high specific surface area of $230\;m^2/g$, a predominant pore size of 6.8 nm and a pore volume of 0.404 mL/g. The electrochemical properties of mesoporous anatase $TiO_2$ for lithium ion battery (LIB) anode materials have been investigated by typical coin cell tests. The initial discharge capacity of these materials is 240 mAh/g, significantly higher than the theoretical capacity (175 mAh/g) of LTO ($Li_4Ti_5O_{12}$). Although the discharge capacity decreases with the C-rate increase, the mesoporous $TiO_2$ is very promising for LIB anode because the surface for the Li insertion is presented significantly with mesopores. Nitrogen doping has a certain effect to control the capacity decrease by improving the electron transport in $TiO_2$ framework.