• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.4
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• pp.176-179
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• 2005

The increasing demand for high density packaging technologies and the evolution to mixed digital and analogue devices has been the con-set of increasing research in thin film multi-layer technologies such as the passive components integration technology. In this paper, Cu and TaO thin film with RF sputtering was deposited for spiral inductor and MOM capacitor on the $SiO_2$/Si(100) substrate. MOM capacitor and spiral inductor were fabricated for L-C band pass filter by sputtering and lift-off. We are analyzed and designed thin films L-C passive components for band pass filter at 900 MHz and 1.8 GHz, important devices for mobile communication system. Based on the high-Q values of passive components, MOM capacitor and spiral inductors for L-C band pass filter, a low insertion loss of L-C passive components can be realized with a minimized chip area. The insertion loss was 3 dB for a 1.8 GHz filter, and 5 dB for a 900 MHz filter. This paper also discusses a analysis and practical design to thin-film L-C band pass filter.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.24.1-24.1
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• 2009

Tantalum carbo-nitride($T_aC_xN_y$) films were deposited with chemical vapor deposition(CVD) using tert-butylimido tris-diethylamido tantalum (TBTDET, $^tBu-N=Ta-(NEt_2)_3$, $Et=C_2H_5$, $^tBu=C(CH_3)_3$) between $350^{\circ}C$ and $600^{\circ}C$ with argon as a carrier gas. Fourier transform infrared (FT-IR)spectroscopy was used to study the thermal decomposition behavior of TBTDET in the gas phase. When the temperature was increased, C-H and C-N bonding of TBTDET disappeared and the peaks of ethylene appeared above $450^{\circ}C$ in the gas phase. The growth rate and film density of $T_aC_xN_y$ film were in the range of 0.1nm/min to 1.30nm/min and of $8.92g/cm^3$ to $10.6g/cm^3$ depending on the deposition temperature. $T_aC_xN_y$ films deposited below $400^{\circ}C$ were amorphous and became polycrystal line above $500^{\circ}C$. It was confirmed that the $T_aC_xN_y$ film was a mixture of TaC, graphite, $Ta_3N_5$, TaN, and $Ta_2O_5$ phases and the oxide phase was formed from the post deposition oxygen uptake. With the increase of the deposition temperature, the TaN phase was increased over TaC and $Ta_3N_5$ and crystallinity, work function, conductivity and density of the film were increased. Also the oxygen uptake was decreased due to the increase of the film density. With the increase of the TaC phase in $T_aC_xN_y$ film, the work function was decreased to 4.25eV and with the increase of the TaN phase in $T_aC_xN_y$ film,it was increased to 4.48eV.

• International Journal of Costume and Fashion
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• v.5 no.2
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• pp.46-54
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• 2005

The Purpose of this research was focused on analyzing how costume was exactly researched for film in comparison with the original Renaissance costume, and how to change the degree of brightness and chroma in costume of two films, 'Shakespeare in Love' and 'Elizabeth: The Virgin Queen'. For these purpose, each costume of main seven scenes was analyzed in terms of silhouette, detail, and trimming. Color image, brightness and chroma of costume were compared with the color chip data from Samsung Design Net. As results, costume from two films had exactness in historical research. but the original costumes were modernly changed by the purpose of director. Color image of costume were used proper colors for the characteristic of the story. Costumes of heroine was numerically changed at the degree qf the brightness and chroma through story-going. By this change, director could effectively give dramatic rhythm for the story. The limitation of this research was that color analysis had been conducted on the screen, and this fact might mean the original colors of film might be different from those of screen.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.07a
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• pp.119-126
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• 2001

Chip-on-glass(COG) mounting of area array electronic packages was attempted by heating the rear surface of a contact pad film deposited on a glass substrate. The pads consisted of an adhesion(i.e. Cr or Ti) and a top coating layer(i.e. Ni or Cu) was heated by an UV laser beam transmitted through the glass substrate. The laser energy absorbed on the pad raised the temperature of a solder ball which is in physical contact with the pad, forming a reflowed solder bump. The effects of the adhesion and top coating layer on the laser reflow soldering were studied by measuring temperature profile of the ball during the laser heating process. The results were discussed based on the measurement of reflectivity of the adhesion layer. In addition, the microstructures of solder bumps and their mechanical properties were examined.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.48.1-48.1
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• 2009

Performance of organic field-effect transistors (OFETs) with various temperature-cured polyacrylate(PA) copolymer as a gate insulator was studied. The PA thin film, which was cured at an optimized temperature, showed high dielectric strength (>7 MV/cm), low leakage current density ($5{\times}10^{-9}\;A/cm^2$ at 1 MV/cm) and enabled negligible hysteresis in MIS capacitor and OFET. A field-effect mobility of ${\sim}0.6\;cm^2/V\;s$, on/off current ratio (Ion/Ioff) of ${\sim}10^5$ and inverse subthreshold slope (SS) as low as 1.22 V/decwere achieved. The high dielectric strength made it possible to scale down the thickness of dielectric, and low-voltage operation of -5 V was successfully realized. The chemical changes were monitored by FT-IR. The morphology and microstructure of the pentacene layer grown on PA dielectrics were also investigated and correlated with OFET device performance.

• Journal of Welding and Joining
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• v.31 no.3
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• pp.84-88
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• 2013

These days embedded technology may be the most significant development in the electronics industry. The study focused on the development of active device embedding using flexible printed circuit in view of process and materials. The authors fabricated 30um thickness Si chip without any crack, chipping defects with a dicing before grinding process. In order to embed chips into flexible PCB, the chip pads on a chip are connected to bonding pad on flexible PCB using an ACF film. After packaging, all sample were tested by the O/S test and carried out the reliability test. All samples passed environmental reliability test. In the future, this technology will be applied to the wearable electronics and flexible display in the variety of electronics product.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.377-377
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• 2007

A simplified integration process including packaging is presented, which enables the realization of the portable fluorescence detection system. A fluorescence detection microchip system consisting of an integrated PIN photodiode, an organic light emitting diode (OLED) as the light source, an interference filter, and a microchannel was developed. The on-chip fluorescence detector fabricated by poly(dimethylsiloxane) (PDMS)-based packaging had thin-film structure. A silicon-based integrated PIN photo diode combined with an optical filter removed the background noise, which was produced by an excitation source, on the same substrate. The active area of the finger-type PIN photo diode was extended to obtain a higher detection sensitivity of fluorescence. The sensitivity and the limit of detection (LOD S/N = 3) of the system were $0.198\;nA/{\mu}M$ and $10\;{\mu}M$, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.89-90
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• 2000

A new technology realizing interconnection between Plastic Film LCDs panel and a driving circuit was developed under the processing condition of low temperature and pressure with ACFs developed for Plastic Film LCDs. The conduction failure of interconnection of the two resulted from elasticity, low thermal resistance and high thermal expansion of plastic substrates. Conductive particles with elasticity similar to the plastic substrate did not damaged a ITO electrode on plastic substrates, and low temperature and pressure process also did not deform the surface of plastic substrates. As a result highly reliable interconnection with minimum contact resistance was accomplished.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.966-969
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• 2003

Thin film capacitors with Al-Polymer-Al sandwich structure were fabricated. The bottom and top aluminium (Al) electrodes were deposited by vacuum evaporation and copper phthalocyanine (CuPc), polyaniline-emeraldine base (Pani-EB) and cobalt phthalocyanine/polyaniline - emeraldine base (CoPc /Pani-EB) blend films (which can be used as buffer hole injection layer in OLEDs) were deposited by spin coating technique. X-ray diffractograms indicated amorphous nature of the polymer films whose thicknesses were measured by capacitance and Rutherford Backscattering Spectrometry (RBS) methods. AC conduction studies revealed that the conduction mechanism responsible in these films is variable range hopping of polarons. From D.C conduction studies, it is observed that, the nature of conduction is ohmic in the lower fields and at higher fields the dominating D.C conduction is of Poole-Frenkel type.

• Proceedings of the Korean Society of Laser Processing Conference
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• 2006.11a
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• pp.53-81
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• 2006

A COG(Chip on Glass) bonding process that is one of display packaging technology and bonds between driver IC chip and a glass panel using ACF(Anisotropic Conductive Film)has been investigated by using diode laser. This method is possible to raise cure temperature of ACF within one second and can reduce the total process time for COG bonding by a conventional method such as a hot plate. Also we can get good pressure mark on the surface of electrodes and higher bonding strength than that by convention method. Results show that laser COG bonding can give low pressure bonding and decrease a warpage of panel. We believe that it can be applied to fine pitch module.