• Title/Summary/Keyword: chip control

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Microarray Analysis of Gene Expression in Rat Glioma after Ethanol Treatment (에탄올 처리에 의한 흰쥐 신경아교종(Glioma) 세포에서의 유전자 발현 - DNA 칩을 이용한 분석 -)

  • Lee, So Hee;Oh, Dong-Yul;Han, Jin-Hee;Choi, Ihn-Geun;Jeon, Yang-Whan;Lee, Joon-Noh;Lee, Tae Kyung;Jeong, Jong-Hyun;Jung, Kyung Hwa;Chai, Young-Gyu
    • Korean Journal of Biological Psychiatry
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    • v.14 no.2
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    • pp.115-121
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    • 2007
  • Objetives : Identification of target genes for ethanol in neurons is important for understanding its molecular and cellular mechanism of action and the neuropathological changes seen in alcoholics. The purpose of this study is to identify of altered gene expression after acute treatmet of ethanol in rat gliom cells. Methods : We used high density cDNA microarray chip to measure the expression patterns of multiple genes in cultured rat glioma cells. DNA microarrays allow for the simultaneous measurement of the expression of several hundreds of genes. Results : After comparing hybridized signals between control and ethanol treated groups, we found that treatment with ethanol increased the expression of 15 genes and decreased the expression of 12 genes. Upregulated genes included Orthodenticle(Drosophila) homolog 1, procollagen type II, adenosine A2a receptor, GATA bindning protein 2. Downregulated genes included diacylglycerol kinase beta, PRKC, Protein phosphatase 1, clathrin-associated protein 17, nucleoporin p58, proteasome. Conclusion : The gene changes noted were those related to the regulation of transcription, signal transduction, second messenger systems. modulation of ischemic brain injury, and neurodengeneration. Although some of the genes were previously known to be ethanol responsive, we have for the most part identified novel genes involved in the brain response to ethanol.

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Analysis on the Cooling Efficiency of High-Performance Multicore Processors according to Cooling Methods (기계식 쿨링 기법에 따른 고성능 멀티코어 프로세서의 냉각 효율성 분석)

  • Kang, Seung-Gu;Choi, Hong-Jun;Ahn, Jin-Woo;Park, Jae-Hyung;Kim, Jong-Myon;Kim, Cheol-Hong
    • Journal of the Korea Society of Computer and Information
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    • v.16 no.7
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    • pp.1-11
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    • 2011
  • Many researchers have studied on the methods to improve the processor performance. However, high integrated semiconductor technology for improving the processor performance causes many problems such as battery life, high power density, hotspot, etc. Especially, as hotspot has critical impact on the reliability of chip, thermal problems should be considered together with performance and power consumption when designing high-performance processors. To alleviate the thermal problems of processors, there have been various researches. In the past, mechanical cooling methods have been used to control the temperature of processors. However, up-to-date microprocessors causes severe thermal problems, resulting in increased cooling cost. Therefore, recent studies have focused on architecture-level thermal-aware design techniques than mechanical cooling methods. Even though architecture-level thermal-aware design techniques are efficient for reducing the temperature of processors, they cause performance degradation inevitably. Therefore, if the mechanical cooling methods can manage the thermal problems of processors efficiently, the performance can be improved by reducing the performance degradation due to architecture-level thermal-aware design techniques such as dynamic thermal management. In this paper, we analyze the cooling efficiency of high-performance multicore processors according to mechanical cooling methods. According to our experiments using air cooler and liquid cooler, the liquid cooler consumes more power than the air cooler whereas it reduces the temperature more efficiently. Especially, the cost for reducing $1^{\circ}C$ is varied by the environments. Therefore, if the mechanical cooling methods can be used appropriately, the temperature of high-performance processors can be managed more efficiently.

Effects of Additives on the Improvement of Frozen Dough Quality (첨가물이 냉동반죽의 품질향상에 미치는 영향)

  • Lee, Young-Chun;Jeong, Hyung-Won;Yoon, Suk-Kwon
    • Korean Journal of Food Science and Technology
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    • v.36 no.2
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    • pp.217-225
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    • 2004
  • This study was carried out to reduce the loss of frozen dough quality during frozen storage. Using response surface method, ascorbic acid 160.4 ppm, L-cysteine 63.1 ppm, and SSL 0.6% were found to be optimum, with xanthan gum 0.3% (formula A) and Ultra tex-3 5% (formula B) added as cryoprotectants. During frozen storage at $-20^{\circ}C$, control rapidly deteriorated after 4 weeks, while formulas A and B showed slight deterioration with immutable quality after 10 weeks.

Analysis of the Effect of the Etching Process and Ion Injection Process in the Unit Process for the Development of High Voltage Power Semiconductor Devices (고전압 전력반도체 소자 개발을 위한 단위공정에서 식각공정과 이온주입공정의 영향 분석)

  • Gyu Cheol Choi;KyungBeom Kim;Bonghwan Kim;Jong Min Kim;SangMok Chang
    • Clean Technology
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    • v.29 no.4
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    • pp.255-261
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    • 2023
  • Power semiconductors are semiconductors used for power conversion, transformation, distribution, and control. Recently, the global demand for high-voltage power semiconductors is increasing across various industrial fields, and optimization research on high-voltage IGBT components is urgently needed in these industries. For high-voltage IGBT development, setting the resistance value of the wafer and optimizing key unit processes are major variables in the electrical characteristics of the finished chip. Furthermore, the securing process and optimization of the technology to support high breakdown voltage is also important. Etching is a process of transferring the pattern of the mask circuit in the photolithography process to the wafer and removing unnecessary parts at the bottom of the photoresist film. Ion implantation is a process of injecting impurities along with thermal diffusion technology into the wafer substrate during the semiconductor manufacturing process. This process helps achieve a certain conductivity. In this study, dry etching and wet etching were controlled during field ring etching, which is an important process for forming a ring structure that supports the 3.3 kV breakdown voltage of IGBT, in order to analyze four conditions and form a stable body junction depth to secure the breakdown voltage. The field ring ion implantation process was optimized based on the TEG design by dividing it into four conditions. The wet etching 1-step method was advantageous in terms of process and work efficiency, and the ring pattern ion implantation conditions showed a doping concentration of 9.0E13 and an energy of 120 keV. The p-ion implantation conditions were optimized at a doping concentration of 6.5E13 and an energy of 80 keV, and the p+ ion implantation conditions were optimized at a doping concentration of 3.0E15 and an energy of 160 keV.