• Journal of Korean Society for Quality Management
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• v.43 no.3
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• pp.359-372
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• 2015

Purpose: Through studying the expert's and non-experts panel responses to the questions regarding the attributes of chemical-biological protection cloth quality in terms of the levels of customer demand and technical factors has been studied. We are applied to a QFD matrix with find out the relationship between the selective removal efficiency of chemical-biological cloth and the guidelines of technical approach. Methods: We fabricated several composite of ion-exchange resins with selectively permeable performance designed to facilities water vapor transport and selective adsorption of the harmful gases. With these materials, we characterized on the selectively permeable performance to identify ion-exchange resin with chemical-biological protective cloth. Results: Results showed that ion exchange materials possessed performance with selectively efficiencies as NH3, SOx, NOx and HCl gas. The selective adsorption amount of ammonia and hydrogen gases were $90-80{\mu}g/g$ with TRILITE SCR-BH sulfonated ion exchange resin. The PP non-woven/ion exchange resin adsorbent materials possessed performance with water vapor permeability were 1,100-1,350 g/m2/day, it's was two times high value compare with activated carbon. With these materials, we characterized selectively removal efficiency to identify new ion-exchange material with chemical-biological protective capability. Conclusion: This study shows that a QFD aids in deciding with of the adsorption parameters to optimized with chemical-biological protection cloth manufacturing.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.4
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• pp.160-168
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• 2004

We investigate the effects of solutal convection on the crystal growth rate in a horizontal configuration for diffusive-convection conditions and purely diffusion conditions achievable in a low gravity environment for a nonlinear thermal gradient. It is concluded that the solutally-driven convection due to the disparity in the molecular weights of the component A $(Hg_2Br_2)$ and B (CO) is stronger than thermally-driven convection for both the nonlinear and the linear thermal profiles, corresponding to $Gr_t= 8.5{\times}10^3,\; Gr_s = 1.05{\times}10^5$. For both solutal and thermal convection processes, the growth rates for the linear thermal profile (conducting walls) are greater than for the nonlinear case. With the temperature humps, there are found to be observed in undersaturation for diffusive-convection processes ranging from $D_{AB}$ = 0.087 to 0.87. For the vertical configurations, the diffusion mode is so much dominated that the growth rate and interfacial distribution is nearly regardless of the gravitational accelerations. Also, the diffusion mode is predominant over the convection for the gravity levels less than 0.1 $g_0$ for the horizontally oriented configuration.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.309-309
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• 2012

Heteroepitaxial growth remains as one of the continuously growing interests, because the heterogeneous crystallization on different substrates is a common feature in the fabrication processes of many semiconductor materials and devices, such as molecular beam epitaxy, pulsed laser deposition, sputtering, chemical bath deposition, chemical vapor deposition, hydrothermal synthesis, vapor phase transport and so on [1,2]. By using the R.F. sputtering system, ZnO thin films were deposited on graphene 4 and 6 mono layers, which is grown on 400 nm and 600 nm $SiO_2$ substrates, respectively. The ZnO thin layer was deposited at various temperatures by using a ZnO target. In this experimental, the working power and pressure were $3{\times}10^{-3}$ Torr and 50 W, respectively. The base pressure of the chamber was kept at a pressure around $10^{-6}$ Torr by using a turbo molecular pump. The oxygen and argon gas flows were controlled around 5 and 10 sccm by using a mass flow controller system, respectively. The structural properties of the samples were analyzed by XRD measurement. The film surface and carrier concentration were analyzed by an atomic force microscope and Hall measurement system. The surface morphologies were observed using field emission scanning electron microscope (FE-SEM).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.1
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• pp.29-35
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• 2012

Special attention in the role of convection in vapor crystal growth has been paid since some single crystals under high gravity acceleration of $10g_0$ appear considerably larger than those under normal gravity acceleration ($1g_0$). With increasing the gravity acceleration from $1g_0$ up to $10g_0$, the total molar flux for ${\Delta}T$ = 30 K increases by a factor of 4, while for ${\Delta}T$ = 90, by a factor of 3. The maximum molar fluxes for three different gravity levels of $1g_0$, $4g_0$ and $10g_0$, appear approximately in the neighborhood of y = 0.5 cm, and the molar fluxes show asymmetrical patterns, which indicate the occurrence of either one single or more than one convective cell. As the gravitational level is enhanced form $1g_0$ up to $10g_0$, the intensity of convection is increased significantly through the maximum molar fluxes for ${\Delta}T$ = 30 K and 90 K. At $10g_0$, the maximum total molar flux is nearly invariant for for ${\Delta}T$ = 30 K and 90 K. The total molar flux increases with increasing the gravity acceleration, for $1g_0{\leq}g_y{\leq}10g_0$, and decreases with increasing the partial pressure of component B, a noble gas called as Kr (Krypton), $P_B$. The ${{\mid}U{\mid}}_{max}$ is directly proportional to the gravity acceleration for 20 Torr $P_B{\leq}300$ Torr. As the partial pressure of $P_B$ (Torr) decreases from 300 Torr to 20 Torr, the slopes of the ${{\mid}U{\mid}}_{max}s$ versus the gravity accelerations increase from 0.29 sec to 0.54 sec, i.e. by a factor of 2. The total molar flux of $Hg_2Cl_2$ is first order exponentially decayed with increasing the partial pressure of component B, $P_B$ (Torr) from 20 Torr up to 300 Torr.

• The Journal of the Korea institute of electronic communication sciences
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• v.5 no.1
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• pp.88-92
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• 2010

Bottom gate and top gate field-effect transistor based carbon nanotube(CNT) were fabricated by CMOS process. Carbon nanotube directly grown by thermal chemical vapor deposition(CVD) using Ethylene ($C_2H_4$) gas at $700^{\circ}C$. The growth properties of CNTs on the device were analyzed by SEM and AFM. The electrical transport characteristics of CNT FET were investigated by I-V measurement. Transport through the nanotubes is dominated by holes at room temperature. By varying the gate voltage, bottom gate and top gate field-effect transistor successfully modulated the conductance of FET device.

• Journal of environmental and Sanitary engineering
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• v.17 no.1
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• pp.52-56
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• 2002

The study was carried out to evaluate the characteristics of biodegradation by Pseudomonas putida G7 in soil column. The reactor system was used to investigate mass transfer of VOCs as Toluene in a column of unsaturated soil. Determination of the fate of VOCs in unsaturated soil is necessary to evaluate the feasibility of natural attenuation as a VOCs remediation strategy. The objective of this study was to develop a mechanistically based mathematical model that would consider the interdependence of VOC transport, microbial activity, and sorptive interactions in a moist, unsaturated soil. Because the focus of the model was on description of natural attenuation, the advective VOCs transport that is induced in engineered remediation processes such as vapor extraction was not considered. It can be concluded that the coefficient for gas liquid mass-transfer was found to be a key parameter controlling the ability of bacteria to VOCs. Finally, it appeared that bioremediation technology of VOCs which are difficult to be decomposed by chemical methods.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1563-1565
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• 1997

Electroluminescence(EL)devices based on organic thin layers have attracted lot of interests because of their possible application as large-area light-emitting display. One of the problems of such devices is lifetime of the cell, where the degradation of the cell is partially due to the crystalliyzation of organic layers. In large part, this problem can be solved by using a multilayer device structure prepared by vapor deposition technique. In this study, blue lightemitting multilayer organic electroluminescence devices were fabricated using Poly (9-vinyl-carbazole) (PVK) and 2-(4'-tert-butylpheny])-5-(4"-bis-phenyl)1,3,4-oxadiazole (PBD) as hole trasport and electron transport material, respectively, where tris(8-hydroxyquinolinate) aluminum (Alq3) was used as a luminescenct material. A cell structure of glass substrate/indume-tin-oxide(ITO)/PVK/$Alq_3$/PBD/Mg:In was employed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.23-23
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• 2009

Recently, the nanowire configuration of GST showed nanosecond-level phase switch at very low power dissipation, suggesting that the nanowires could be ideal for data storage devices. In spite of many advantages of IST materials, their feasibility in both thin films and nanowires for electronic memories has not been extensively investigated. The synthesis of the chalcogenide nanowires was mainly preformed via a vapor transport process such as vapor-liquid-solid (VLS) growth at a high temperature. However, in this study, IST nanowires as well as thin films were prepared at a low temperature (${\sim}250^{\circ}C$) by metal organic chemical vapor deposition(MOCVD) method, which is possible for large area deposition. The IST films and/or nanowires were selectively grown by a control of working pressure at a constant growth temperature by MOCVD. In-Sb-Te NWs will be good candidate materials for high density PRAM applications. And MOCVD system is powerful for applying ultra scale integration cell.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.230-233
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• 2001

FeSi2/Si Layer were grown using FeSi2, Si wafer by the chemical transport reactio nmethod. The directoptical energy gap was found to be 0.871eV at 300 K. The Hall effect is a physical effect arising in matter carrying electric current inthe presence of a magnetic field. The effect is named after the American physicist E. H. Hall, who discovered it in 1879. IN this paper, we study electrical properties of FeSi2/Si layer. And then we measured Hall coefficient Hall mobility, carrier density and Hall voltage according to variation magnetic field and temperature, Because of important part for it applicationVarious phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.234-237
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• 2001

FeSi2/Si Layer were grown using FeSi2, Si wafer by the chemical transport reactio nmethod. The directoptical energy gap was found to be 0.871eV at 300 K. The Hall effect is a physical effect arising in matter carrying electric current inthe presence of a magnetic field. The effect is named after the American physicist E. H. Hall, who discovered it in 1879. IN this paper, we study electrical properties of FeSi2/Si layer. And then we measured Hall coefficient Hall mobility,carrier density and Hall voltage according to variation magnetic field and temperature, Because of important part for it applicationVarious phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.