• 한국결정성장학회지
• /
• 제16권4호
• /
• pp.149-156
• /
• 2006

For an aspect ratio (transport length-to-width) of 5, Pr = 2.89, Le = 0.018, Pe = 2.29, Cv = 1.11, $P_B$=40 Torr, solutally buoyancy-driven convection $(Gr_s=3.03{\times}10^5)$ due to the disparity in the molecular weights of the component A $(Hg_2Cl_2)$ and B (He) is stronger than thermally buoyancy-driven convection $(Cr_t=1.66{\times}10^4)$. The crystal growth rate is decreased exponentially for $2.5\;{\leq}\;Ar\;{\leq}\;5$, with (1) the linear temperature profile and a fixed temperature difference, (2) the imposed thermal profile, a fixed crystal region and varied temperature difference. This is related to the finding that the effects of side walls tend to stabilize convection in the growth reactor. But, with the imposed thermal profile, a fixed source region and varied temperature difference, the rate is increased far $2\;{\leq}\;Ar\;{\leq}\;3$, and remains nearly unchanged for $3\;{\leq}\;Ar\;{\leq}\;5$.

• 한국산학기술학회논문지
• /
• 제20권5호
• /
• pp.81-86
• /
• 2019

금속산화물/그래핀 복합체는 고감도 가스센서 및 고용량의 이차전지와 같은 첨단 응용 분야에 활용될 수 있는 유망한 기능성 소재로 알려져 있다. 본 연구에서는 이산화주석($SnO_2$) 나노구조물을 두 영역 전기로 장치를 이용하여 화학적으로 합성된 그래핀 나노시트 위에 성장시켰다. 대면적의 그래핀 나노시트는 Cu foil 위에 열화학기상증착 장비를 이용하여 메탄가스와 수소가스로 합성하였다. 화학적으로 합성된 그래핀 나노시트는 PMMA를 이용하여 세척된 Si 기판위에 전사시켰고, $SnO_2$ 나노구조물은 그래핀 나노시트 위에 $424^{\circ}C$, 3.1 Torr 조건에서 3시간동안 성장시켰다. 합성된 그래핀의 품질과 성장된 $SnO_2$ 나노구조물의 결정학적 특성을 Raman 분광학으로 확인하였다. 그래핀 위에서 성장된 $SnO_2$ 나노구조물의 표면형상은 전계방출 주사전자현미경으로 조사하였다. 그 결과 합성된 그래핀 나노시트는 이중층 그래핀이었고, 그래핀 위에서 성장된 산화주석은 $SnO_2$ 상을 가지고 있었다. 그래핀 위에서 성장된 $SnO_2$ 나노구조물은 복잡한 표면형상을 나타내었는데, 이것은 Si 기판 위에서 성장된 $SnO_2$ 나노구조물이 nano-dots 형태인 것과 비교된다. 그래핀 위에서 성장된 $SnO_2$ 나노구조물이 복잡한 형상을 갖는 것은 그래핀 표면의 기능기의 영향인 것으로 판단된다.

• 대한기계학회논문집B
• /
• 제23권8호
• /
• pp.1040-1047
• /
• 1999

The characteristics of flame propagation in inert particle-laden $H_2$/Air premixed gas are numerically investigated on this study. The 2nd order TVD scheme is applied to numerical analysis of governing equations and multi-step chemical reaction model and detailed transport properties are sued to solve chemical reaction terms. Radiation heat transfer is computed by applying the finite volume method to a radiative transfer equation. The burning velocities against the mole fractions of hydrogen agree well with results performed by different workers. The inert particles play significant roles in the flame propagation on account of momentum and heat transfer between gas and particles. Gas temperature, pressure and flame propagation speed are decreased as the loading ratio of particle is increased. Also the products behind flame zone contain lots of water vapor whose absorption coefficient is much larger than that of unburned gas. Thus, the radiation effect of gas and particles must be considered simultaneously for the flame propagation in a mixture of $H_2$/Air and inert particles. As a result, it is founded that because the water vapor emits much radiation and this emitted radiation is released at boundaries as radiant heat loss as well as reabsorbed by gas and particles, flame propagation speed and flame structure are altered with radiation effect.

• 한국진공학회지
• /
• 제12권S1호
• /
• pp.95-99
• /
• 2003

We successfully grew InN/GaN single quantum well structures by metal-organic chemical vapor deposition and confirmed their formation by optical and structural measurements. We speculate that relatively high growth temperature ($730^{\circ}C$) of InN layer enhanced the formation of 2-dimensional quantum well structures, presumably due to high adatom mobility. As the growth interruption time increased, the PL emission efficiency from InN layer improved with peak position blue-shifted and the dislocation density decreased by one order of magnitude. The high resolution cross-sectional TEM images clearly showed that the InN layer thickness reduced from 2.5 nm (without GI) to about I urn (with 10 sec GI) and the InN/GaN interface became very flat with 10 sec GI. We suggest that decomposition and mass transport processes on InN during GI is responsible for these phenomena.

• 한국광학회지
• /
• 제4권3호
• /
• pp.266-275
• /
• 1993

Si 기판 위에 low pressure chemical vapor deposition 방법에 의해 TEOS (tetraethylorthosilicate)와 TMPite (trimethylphosphite)를 재료로하여 집적광학용 $P_2O_5-SiO_2$ 박막을 만들고 그 특성을 조사하였다. TEOS의 반응에 TMPite가 참여함으로서 반응활성화에너지는 54.6 kcal/mole에서 39.2 kcal/mole로 크게 낮아졌으며 박막의 증착속도와 P 농도는 TMPite의 유량에 비례하여 증가하였다. 또한 증착온도가 높을스록 박막의 증착속도는 증가하나 P 농도는 감소하였다. 제작된 박막의 굴절률은 P 농도 1wt% 당 0.0019로 P 농도에 비례하여 증가하였다. 측정된 박막 불균일도는 두께 ${\pm}$7% 및 P 농도 ${\pm}$0.5wt% 정도로서 이러한 불균일성은 주로 TMPite의 불균일한 수송에 기인함을 보였다. 또한 P 농도가 10wt% 이상인 박막을 대기중에 장시간 노출하면 표면에 인산이 석출됨을 확인하였다.

• 한국결정성장학회지
• /
• 제14권2호
• /
• pp.50-57
• /
• 2004

Mercurous Bromide ($Hg_2Br_2$) crystals hold promise for many acousto-optic and opto-electronic applications. This material is prepared in closed ampoules by the physical vapor transport (PVT) growth method. We investigate the effects of solutal convection on the crystal growth rate in a horizontal configuration for diffusive-convection conditions and purely diffusion conditions achievable in a low gravity environment. Our results show that the growth rate is decreased by a factor of one-fourth with a ten reduction of gravitational acceleration near y = 2.0 cm. For 0.1 $g_O$ the growth rate pattern exhibits relatively flat which is intimately related to diffusion-dominated processes. The growth rate nonuniformity is regardless of aspect ratio across the interfacial positions from 0 to 1.5. Also, the effect of a factor of the ten reduction in the gravitational acceleration is same to both Ar = 5 and 2. The enlargement in the molecular weight of B from 50 to 500 by a factor 4 causes a decrease in the maximum growth rate by the same factor, indicative of the effect of solutal gradients.

• 한국전기전자재료학회논문지
• /
• 제14권12호
• /
• pp.1027-1031
• /
• 2001

A new constant growth technique to conserve an initial grating height of V-groove AlGaAs/InGaAs quantum nanostructures above 1.0 $\mu\textrm{m}$ thickness has been successfully embodied on submicron gratings using low pressure metalorganic chemical vapor deposition. A GaAs buffer prior to an AlGaAs barrier layer on submicron gratings plays an important role in overcoming mass transport effects and improving the uniformity of gratings. Transmission electron microscopy (TEM) image shows that high-density V-groove InGaAs quantum wires (QWRs) are well confined at the bottom of gratings. The photoluminescence (PL) peak of the InGaAs QWRs is observed in the temperature range from 10 to 280 K with a relatively narrow full width at half maximum less than 40 meV at room temperature PL. The constant growth technique is an important step to realize complex optoelectronic devices such as one-step grown distributed feedback lasers and two-dimensional photonic crystal.

• 세라미스트
• /
• 제21권2호
• /
• pp.29-37
• /
• 2018

In order to overcome the problems of existing low-dimensional materials (carbon nanotubes, graphene, transition metal dichalcogenides, etc) researches on new 1D materials have been studied. In the case of $LiMo_3Se_3$ and $Mo_6S_{9-x}I_x$, continuous researches have been carried out for 3D bulk synthesis and atomic scale dispersion. Recently, quantum confinement effect of $LiMo_3Se_3$ and bio-stability of $Mo_6S_{9-x}I_x$ have been proven and various applications have started to be studied. In addition, device application results using new 1D materials such as $Sb_2Se_3$ (optoelectronic devices using the property of effectively reducing exciton decay due to no dangling bond) and $VS_4$ (electrochemical energy storage using the space between 1-D nanostructures) have been reported very importantly. Therefore, it can be claimed that it has reached a very important time to find and synthesize new 1D materials and to report various characteristics not existing.

• 반도체디스플레이기술학회지
• /
• 제17권4호
• /
• pp.91-96
• /
• 2018

In this study temperature distribution and gas flow inside a planetary type reactor in which a number of satellites on a spinning susceptor were rotating were analyzed using numerical simulation. Effects of flow rates on gas flow and temperature distribution were investigated in order to obtain design parameters. The commercial computational fluid dynamics software CFD-ACE+ was used in this study. The multiple-frame-of-reference was used to solve continuity, momentum and energy conservation equations which governed the transport phenomena inside the reactor. Kinetic theory was used to describe the physical properties of gas mixture. Effects of the rotation speed of the satellites was clearly seen when the inlet flow rate was small. Thickness of the boundary layer affected by the satellites rotation became very thin as the flow rate increased. The temperature field was little affected by the incoming flow rate of precursors.

• 한국산학기술학회논문지
• /
• 제20권4호
• /
• pp.458-463
• /
• 2019

팔라듐 (Pd)은 촉매 또는 유해 가스 감지물질로서 널리 활용되고 있다. 특히 자체 부피의 900배까지 수소를 흡착할 수 있는 특성 때문에 수소가스 센서로서의 다양한 연구가 이루어졌다. 본 연구에서는 팔라듐 옥사이드 (PdO) 나노구조물을 실리콘 기판 ($SiO_2(300nm)/Si$) 위에 열화학기상증착 장비를 이용하여 $230^{\circ}C{\sim}440^{\circ}C$ 영역에서 3시간 ~ 5시간 동안 성장시켰다. 원료물질인 Pd 파우더는 $950^{\circ}C$에서 기상화시켰고, 이송가스인 고순도 아르곤 가스를 200 sccm으로 흘려주었다. 성장된 팔라듐 옥사이드 나노구조물의 형상을 전계방출 주사전자현미경으로 조사하였고, 결정학적 특성을 Raman 분광학으로 분석하였다. 그 결과 성장된 나노구조물은 PdO 상을 가지고 있었으며, 특정한 기판 온도와 성장 시간에서 나노큐브 형태의 PdO 나노구조물이 성장되었다. 특히 5시간 동안 성장된 $370^{\circ}C$ 영역에서 균일한 형태의 나노큐브 PdO 나노구조물이 성장되었다. 이러한 PdO 나노큐브는 기상-액상-고상 공정으로 성장된 것으로 판단되며, 그래핀 위에 성장되는 PdO 나노큐브 구조는 고감도 수소가스 감지 센서로 활용될 수 있을 것으로 기대된다.