• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.234-237
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• 2001

FeSi$_2$/Si Layer were grown using FeSi$_2$, Si wafer by the chemical transport reaction method. The directoptical energy gap was found to be 0.871ev at 300 K. The Hall effect is a physical effect arising in matter carrying electric current in the presence of a magnetic field. The effect is named after the American physicist E. H. Hall, who discovered it in 1879. In this paper, we study electrical properties of FeSi$_2$/Si layer And then we measured Hall coefficient Hall mobility, carrier density and Hall voltage according to variation magnetic field and temperature, Because of important Part for it application Various phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.230-233
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• 2001

FeSi$_2$ Layer were grown using FeSi$_2$, Si wafer by the chemical transport reaction method. The directoptical energy gap was found to be 0.87leV at 300 K. The Hall effect is a Physical effect arising in matter carrying electric current in the presence of a magnetic field. The effect is named after the American physicist E.H. Hall, who discovered it in 1879. In this paper, we study electrical properties of FeSi$_2$/Si layer. And then we measured Hall coefficient Hall mobility, carrier density and Hall voltage according to variation magnetic field and temperature, Because of important part for it application various phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.

• 한국산학기술학회논문지
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• 제19권10호
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• pp.1-7
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• 2018

이산화주석은 리튬 이온 전지의 Anode 전극물질, 또는 $H_2$, NO, $NO_2$ 등의 가스 분자가 표면에 흡착되면 전기저항이 변하는 특성을 이용하여 가스센서로 활용되고 있으며, 나노구조를 갖는 이산화주석의 합성과 관련하여 많은 연구가 활발하게 이루어지고 있다. 나노구조물의 경우 Bulk 상태보다 체적 대비 표면적비가 높기 때문에 기체분자의 흡착확률을 높일 수 있으므로 고감도 가스 센서의 구현이 가능하고, Li-ion 이차전지의 경우에도 비정전용량을 향상시킬 수 있다. 본 연구에서는 열화학기상증착 장비를 이용하여 기상수송방법으로 $SnO_2$ 나노구조물을 Si 기판 위에 직접 성장시켰다. 이때 이송가스로 이용되는 고순도 Ar 가스에 고순도 산소가스를 혼합하였고, 산소가스의 혼합량에 따라 다른 형태의 산화주석 나노구조물이 성장되는 것을 확인하였다. 기상수송방법으로 성장된 산화주석 나노구조물의 결정학적 특성은 Raman 분광학 및 XRD 분석을 통하여 확인하였고, 표면형상을 주사전자현미경을 통하여 확인하였다. 분석결과 산화주석 나노구조물은 산소가스 혼합량에 민감하게 영향을 받았으며, 이송가스로 이용되는 고순도 Ar 1000 SCCM에 고순도 산소가스 10 SCCM을 혼합하였을 때, 적당한 두께를 가지면서 Nanodots 형태의 표면형상을 갖는 $SnO_2$ 결정상의 나노구조물이 성장되는 것을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.65-65
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• 2009

High temperature silicon carbide Schottky diode was fabricated with Au deposited on poly 3C-SiC thin film grown on p-type Si(100) using atmospheric pressure chemical vapor deposition. The charge transport mechanism of the diode was studied in the temperature range of 300 K to 550 K. The forward and reverse bias currents of the diode increase strongly with temperature and diode shows a non-ideal behavior due to the series resistance and the interface states associated with 3C-SiC. The charge transport mechanism is a temperature activated process, in which, the electrons passes over of the low barriers and in turn, diode has a large ideality factor. The charge transport mechanism of the diode was analyzed by a Gaussian distribution of the Schottky barrier heights due to the Schottky barrier inhomogeneities at the metal-semiconductor interface and the mean barrier height and zero-bias standard deviation values for the diode was found to be 1.82 eV and $s_0$=0.233 V, respectively. The interface state density of the diode was determined using conductance-frequency and it was of order of $9.18{\times}10^{10}eV^{-1}cm^{-2}$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.85-85
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• 2010

Graphene, the building block of graphite, is one of the most promising materials due to their fascinating electronic transport properties. The pseudo-two-dimensional sp2 bonding in graphene layers yields one of the most effective solid lubricants. In this poster, we present the correlation between electrical and nanomechanical properties of graphene layer grown on Cu/Ni substrate with CVD (Chemical Vapor Deposition) method. The electrical (current and conductance) and nanomechanical (adhesion and friction) properties have been investigated by the combined apparatus of friction force microscopy/conductive probe atomic force microscopy (AFM). The experiment was carried out in a RHK AFM operating in ultrahigh vacuum using cantilevers with a conductive TiN coating. The current was measured as a function of the applied load between the AFM tip and the graphene layer. The contact area has been obtained with the continuum mechanical models. We will discuss the influence of mechanical deformation on the electrical transport mechanism on graphene layers.

• Applied Microscopy
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• 제47권1호
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• pp.19-28
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• 2017

Since graphene was discovered in 2004, two-dimensional (2D) materials have been actively studied. Especially, 2D transition metal dichalcogenides (TMDs), such as $MoS_2$ and $WS_2$, have been the subject of significant research because of their exceptional optical, electrical, magnetic, catalytic, and morphological properties. Therefore, these materials are expected to be used in a variety of applications. Furthermore, tuning the properties of TMDs is essential to improve their performance and expand their applications. This review classifies the various doping methods of 2D TMDs, and it summarizes how the dopants interact with the materials and how the performance of the materials improves depending on the synthesis methods and the species of the dopants.

• 한국결정성장학회지
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• 제23권1호
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• pp.20-26
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• 2013

Special attention in the role of convection in vapor crystal growth has been paid since some single crystals under microgravity environments less than 1 $g_0$ exhibits a diffusive-convection mode and much uniformity in front of the crystal regions than a normal gravity acceleration of 1 $g_0$. The total molar fluxes show asymmetrical patterns in interfacial distribution, which indicates the occurrence of either one single or more than one convective cell. As the gravitational level decreases form 1 $g_0$ down to $1.0{\times}10^{-4}\;g_0$, the intensity of convection, indicative of the maximum molar fluxes, is reduced significantly for ${\Delta}T=30K$ and 90 K. The total molar fluxes decay first order exponentially with the partial pressure of component B, PB (Torr) for 20 Torr ${\leq}PB{\leq}$ 300 Torr, and two gravity accelerations of $g_y=1\;g_0$ and 0.1 $g_0$.

• 대한금속재료학회지
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• 제49권2호
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• pp.187-191
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• 2011

In order to obtain a suitable back contacting electrode for $Cu(InGa)Se_2$-based photovoltaic devices, a molybdenum thin film was deposited using a chemical vapor transport (CVT) during the hydrogen reduction of $MoO_3$ powder. A $MoO_2$ thin film was successfully deposited on substrates by using the CVT of volatile $MoO_3(OH)_2$ at $550^{\circ}C$ for 60 min in a $H_2$ atmosphere. The Mo thin film was obtained by reduction of $MoO_2$ at $650^{\circ}C$ in a $H_2$ atmosphere. The Mo thin film on the substrate presented a low sheet resistance of approximately $1{\Omega}/sq$.

• 한국응용과학기술학회지
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• 제17권2호
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• pp.120-125
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• 2000

The tfTZ(4,4',4''-trifluoro-triazine) was used as a hole blocking material for the electroluminescent devices(ELDs) in this study. In general, the holes are outnumbered the electrons in hole transport and emitting layers because the hole transport is more efficient in most organic ELDs. The hole blocking layer are expected to control the excess holes to increase the recombination of holes and electrons and to decrease current density. The former study using the 2,4,6-triphenyl-1,3,5-triazine(TTA) as hole blocking layer showed that the TTA did not form stable films with vapor deposition technique. The tfTZ can generate stable evaporated films, moreover the fluorine group can lower the highest occupied molecular orbital(HOMO) level, which produces the energy barrier for the holes. The tfTZ has high electron affinities according to the data by the Cyclic-Voltammety(CV) method, which is developed for the measurement of HOMO and lowest occupied molecular orbital(LUMO) level of organic thin films. The lowered HOMO level is made the tfTZ to be applied for a hole blocking layer in ELDs. We fabricated multilayer ELDs with a structure of ITO/hole blocking layer(HBL)/hole transporting layer(HTL)/emitting layer/electrode. The hole blocking properties of this devices is confirmed from the lowered current density values compared with that without hole blocking layer.

• Bulletin of the Korean Chemical Society
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• 제33권9호
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• pp.2830-2844
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• 2012

This review covers recent developments in our group regarding the synthesis, characterization and applications of single-crystalline one-dimensional nanostructures based on a wide range of material systems including noble metals, metal silicides and metal germanides. For the single-crystalline one-dimensional nanostructures growth, we have employed chemical vapor transport approach without using any catalysts, capping reagents, and templates because of its simplicity and wide applicability. Au, Pd, and Pt nanowires are epitaxially grown on various substrates, in which the nanowires grow from seed crystals by the correlations of the geometry and orientation of seed crystals with those of as-grown nanowires. We also present the synthesis of numerous metal silicide and germanide 1D nanostructures. By simply varying reaction conditions, furthermore, nanowires of metastable phase, such as $Fe_5Si_3$ and $Co_3Si$, and composition tuned cobalt silicides (CoSi, $Co_2Si$, $Co_3Si$) and iron germanides ($Fe_{1.3}Ge$ and $Fe_3Ge$) nanowires are synthesized. Such developments can be utilized as advanced platforms or building blocks for a wide range of applications such as plasmonics, sensings, nanoelectronics, and spintronics.