• 한국결정성장학회지
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• 제34권2호
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• pp.48-54
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• 2024

브로민화 수은(I)(Hg₂Br₂) 자체 확산 물리적 증착법 공정에서 자체 확산 전달현상 연구에서 얻어진 결론은 10^-3g₀ ≤ g ≤ 1g₀ 영역에서는 열 대류현상이 지배적이며, g = 10^-4g₀ 영역에서는 대류에서 확산영역으로 전이되는 영역이며, 10^-6g₀ ≤ g ≤ 10^-5g₀ 영역에서는 확산모드가 지배적이다. Hg₂Br₂의 총 몰플럭스는 중력가속도의 레벌(level)이 1/10 크기로 감소함에 따라 기하급수적으로 감소함을 나타내고 있다는 것이다. 10℃ ≤ ΔT ≤ 50℃의 온도차 범위에서는 온도차(ΔT)와 Hg₂Br₂의 총 몰플럭스에 대한 관계식은 선형적으로 직선적 비례관계성을 보여주고 있다.

• 한국전기전자재료학회논문지
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• 제28권6호
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• pp.403-407
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• 2015

Generally, MWCNT, with thermal, chemical and electrical superiority, is manufactured with CVD (chemical vapor deposition). Using MWCNT, it is comonly used as gas sensor of MOS-FET structure. In this study, in order to repeatedly detect gases, the author had to effectively eliminate gases absorbed in a MWCNT sensor. So as to eliminate gases absorbed in a MWCNT sensor, the sensor was applied heat of 423[K], and in order to observe how the applied heat was diffused within the sensor, the author interpreted the diffusion process of heat, using COMSOL interpretation program. In order to interpret the diffusion process of heat, the author progressed modeling with the structure of MWCNT gas sensor in 2-dimension, and defining heat transfer velocity($u={\Delta}T/{\Delta}x$), accorded to governing equation within the sensor, the author proposed heat transfer mechanism.

• 한국전기전자재료학회논문지
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• 제20권5호
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• pp.389-393
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• 2007

We fabricated field-effect transistor based carbon nanotubes(CNTs) directly grown by thermal chemical vapor deposition(CVD) and analyzed their performance. The Ethylene ($C_2H_4$), hydrogen($H_2$) and Argon(Ar) gases were used for the growth of CNTs at $700\;^{\circ}C$. The growth properties of CNTs on the device were analyzed by SEM and AFM. The electrical transport characteristics of CNT FET were investigated by I-V measurement. Transport through the nanotubes is dominated by holes at room temperature. By varying the gate voltage, we successfully modulated the conductance of FET device by more than 7 orders of magnitude.

• Bulletin of the Korean Chemical Society
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• 제16권7호
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• pp.588-591
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• 1995

Single crystals of (ZnSe)1-x(CuMSe2)x (M=Al, Ga, or In) were grown by chemical vapor transport technique. Powdered polycrystalline samples of (ZnSe)1-x(CuMSe2)x (M=Al, Ga, or In) were also prepared by the direct combination of the elements. The chemical composition of these single crystals was determined by comparing their lattice parameters with those of the standard polycrystalline samples. The IR transmission range of single crystals of (ZnSe)1-x(CuMSe2)x (M=Al, Ga, or In) is slightly narrower than that observed for pure ZnSe. However, these materials still show good transmission in the long-wavelength IR range. The addition of small amounts of CuMSe2 (M=Al, Ga, or In) considerably increases the hardness of ZnSe.

• 한국결정성장학회지
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• 제33권3호
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• pp.110-115
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• 2023

브로민화 수은(I)(Hg₂Br₂) 물리적 증착법 공정에서 구성요소 B의 분압, P_B를 40 Torr에서 200 Torr로 증가시켰을 때 1개의 셀(unicell)이 결정성장영역에서 기체상 공간의 중심으로 이동함을 보여주고 있다. P_B = 40 Torr에서는 경계층 흐름이 지배적이고, P_B = 200 Torr에서는 코어영역흐름(core region)을 보이고 있다. 고려되는 물리적 증착법 공정에서 P_B = 40 Torr와 P_B = 200 Torr에서 1개(single)의 셀(cell) 형태로 3차원의 유동의 흐름과 x, y 직교 중심축에 대하여 비대칭 유동흐름을 나타내고 있다. 소스와 결정 영역 사이의 임계 온도차는 약 30 K입니다. Hg₂Br₂의 총 몰 플럭스는 임계값에 도달할 때까지 온도차에 따라 증가한다. 임계 총 몰 플럭스에서 총 몰 플럭스는 갑자기 감소한다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.173-173
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• 2003

Nanowire와 nanorod 같은 1차원의 반도체 재료는 디멘젼과 크기와 물리적 특성과의 관계 등을 연구하는데 중요한 역할을 하며 laser ablation, arc discharge, chemical vapor depostion, vapor phase transport Process와 solution등의 방법으로 성공적으로 합성되었다. ZnO 는 3.37eV의 넓은 밴드갭과 다른 넓은 밴드갭 재료에 비해 높은 exciton bindng energy (60meV)를 가지며 UV LED, laser diode에 적용하기 유리하고 최근 디스플레나 나노 광전소자로서의 가능성 이 대두되면서 최근 이에 관한 연구가 증가하고 있다. 본 연구에서는 열적탄소환원법(carbothermal reduction process)으로 ZnO와 graphite 분말을 1:1 중량비로 혼합한 분말을 90$0^{\circ}C$, 100$0^{\circ}C$에서 air 분위기에서 20분간 반응 후 로 내에서 냉각 하였다. 직경 이 50nm-1000nm, 길이가 수 미크론인 내부 결함이 전혀 없는 육각형 단결정의 nanowire가 합성되었고 XRD, FE-SEM과 TEM으로 조성 및 형상, 내부구조를 분석하였다. 합성된 ZnO nanowire는 직경 이 변하는 부분에서 성장방향으로의 계단을 형성하였고 이는 layer by layer 방법으로 nanowire가 성장한다는 것을 나타낸다.

• 한국세라믹학회지
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• 제31권5호
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• pp.477-484
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• 1994

The yttria stabilized zirconia(YSZ) thin films for solid oxide fuel cell (SOFC) were fabricated by an electrochemical vapor deposition(EVD) technique using YCl3+ZrCl4+H2O gas system. The YSZ films were deposited under reduced pressure at the temperature of 1000~120$0^{\circ}C$ on the porous alumina substrates. The deposition rate, chemical composition and growth morphology were investigated by SEM, XRD, EDS. The growth rates of the films obeyed a parabolic rate law, representing that the growing process is controlled by an electrochemical transport through the YSZ film. The Y2O3 content of the films was about 10 mol%, equal to the composition of metal chloride reactant gases, approximately. The YSZ films were highly dense, the growing features showed columnar structure and surface morphologies were changed with the EVD conditions.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.252.2-252.2
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• 2013

ZnO nanostructures have a lot of interest for decades due to its varied applications such as light-emitting devices, power generators, solar cells, and sensing devices etc. To get the high performance of these devices, the factors of nanostructure geometry, spacing, and alignment are important. So, Patterning of vertically- aligned ZnO nanowires are currently attractive. However, many of ZnO nanowire or nanorod fabrication methods are needs high temperature, such vapor phase transport process, metal-organic chemical vapor deposition (MOCVD), metal-organic vapor phase epitaxy, thermal evaporation, pulse laser deposition and thermal chemical vapor deposition. While hydrothermal process has great advantages-low temperature (less than $100^{\circ}C$), simple steps, short time consuming, without catalyst, and relatively ease to control than as mentioned various methods. In this work, we investigate the dependence of ZnO nanowire alignment and morphology on si substrate using of nanosphere template with various precursor concentration and components via hydrothermal process. The brief experimental scheme is as follow. First synthesized ZnO seed solution was spun coated on to cleaned Si substrate, and then annealed $350^{\circ}C$ for 1h in the furnace. Second, 200nm sized close-packed nanospheres were formed on the seed layer-coated substrate by using of gas-liquid-solid interfacial self-assembly method and drying in vaccum desicator for about a day to enhance the adhesion between seed layer and nanospheres. After that, zinc oxide nanowires were synthesized using a low temperature hydrothermal method based on alkali solution. The specimens were immersed upside down in the autoclave bath to prevent some precipitates which formed and covered on the surface. The hydrothermal conditions such as growth temperature, growth time, solution concentration, and additives are variously performed to optimize the morphologies of nanowire. To characterize the crystal structure of seed layer and nanowires, morphology, and optical properties, X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Raman spectroscopy, and photoluminescence (PL) studies were investigated.

• Progress in Superconductivity
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• 제9권1호
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• pp.5-10
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• 2007

We prepared four different $MgB_2$ films on $Al_2O_3$ by hybrid physical chemical vapor deposition method with thicknesses ranging from $0.65\;{\mu}m$ to $1.2\;{\mu}m$. X-ray diffraction patterns confirm that all the $MgB_2$ films are c-axis oriented perpendicular to $Al_2O_3$ substrates. The superconducting onset temperature of $MgB_2$ films were between 39.39K and 40.72K. The residual resistivity ratio of the $MgB_2$ films was in the range between 3.13 and 37.3. We measured the angle dependence of critical current density ($J_c$) and resistivity, and determined the upper critical field ($H_{c2}$) from the temperature dependence of the resistivity curves. The anisotropy ratios defined as the ratio of the $H_{c2}$ parallel to the ab-plane to that perpendicular to the ab-plane were in the range of 2.13 to 4.5 and were increased as the temperature was decreased. Some samples showed increase of $J_c$ and decrease of resistivity when a magnetic field in applied parallel to the c-axis. We interpret this angle dependence in terms of enhanced flux pinning due to columnar growth of $MgB_2$ along the c-axis.

• 한국정밀공학회지
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• 제19권7호
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• pp.106-115
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• 2002

Growth characteristics of micro carbon structures fabricated by laser-assisted chemical vapor deposition are studied. Argon ion laser and ethylene were used as the energy source and reaction gas, respectively, to grow micro carbon rod through pyrolytic decomposition of the reaction gas. Experiments were performed at various conditions to investigate the influence of process parameters on growth characteristics such as the diameter or growth rate of the micro carbon rod with respect to reaction gas pressure and incident laser power. Reaction gas pressure in experiments ranges from 200 to 600Torr and the incident laser power from 0.3 to 3.8W. For these conditions, the diameter of the rod increases linearly with respect to the laser power but is almost independent of the reaction gas pressure. Growth rate of the rod changes little with gas pressure when the laser power remains below IW. For a constant reaction gas pressure, the growth rate increase with Increasing laser power, but the rate of increase decreases gradually, implying that the chemical vapor deposition condition changes from a kinetically-limited regime to a mass-transport-limited regime. When the carbon rod was grown at near threshold laser power, a very smooth surface is obtained on the rod. By continuously moving the focusing lens in the direction of growth, a micro carbon rod with a diameter of 287${\mu}{\textrm}{m}$ and aspect ratio of 100 was fabricated..