• Membrane Journal
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• v.23 no.3
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• pp.237-244
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• 2013

We fabricated several composite membranes with selectively permeable performance designed to facilitate water vapor transport and resist DMMP vapor permeation. Materials for selective permeable membrane were based on polyvinyl alcohol and functional polymer containing basic functional group. With these materials, we characterized selectively permeable performance to identify next-generation material with chemical-biological protective capability. Results showed that polyvinyl alcohol (PVA)/polyethyleneimine (PEI) materials possessed performance with superior water vapor permeation ($2,200{\sim}2,900g/m^2/day$) and protective capability against DMMP vapor ($47g/m^2/day$).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.3
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• pp.117-124
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• 2010

For Ar=5, Pr=1.18, Le=0.15, Pe=2.89, Cv=1.06, $P_B$=20 Torr, the effects of impurity $(N_2)$ on thermally and solutally buoyancy-driven convection ($Gr_t=3.46{\times}10^4$ and $Gr_s=6.02{\times}10^5$, respectively) are theoretically investigated for further understanding and insight into an essence of thermo-solutal convection occurring in the vapor phase during the physical vapor transport. For $10K{\leq}{\Delta}T{\leq}50K$, the crystal growth rates are intimately related and linearly proportional to a temperature difference between the source and crystal region which is a driving force for thermally buoyancy-driven convection. Moreover, both the dimensionless Peclet number (Pe) and dimensional maximum velocity magnitudes are directly and linearly proportional to ${\Delta}T$. The growth rate is second order-exponentially decayed for $2{\leq}Ar{\leq}5$. This is related to a finding that the effects of side walls tend to stabilize the thermo-solutal convection in the growth reactor. Finally, the growth rate is found to be first order exponentially decayed for $10{\leq}P_B{\leq}200$ Torr.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.3
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• pp.125-132
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• 2010

For typical governing dimensionless parameters of Ar = 5, Pr = 1.16, Le = 0.14, Pe = 3.57, Cv = 1.02, $Gr_s=2.65{\times}10^6$, the effects of thermo physical properties such as a molecular weight, a binary diffusivity coefficient, a partial pressure of component B on solutally buoyancy-driven convection (solutal Grashof number $Gr_s=2.65{\times}10^6$) are theoretically investigated for further understanding and insight into an essence of solutal convection occurring in the vapor phase during the physical vapor transport of a $Hg_2Cl_2-N_2$ system. The solutally buoyancy-driven convection is significantly affected by any significant disparity in the molecular weight of the crystal components and the impurity gas of nitrogen. The solutal convection in a vertical orientation is found to be more suppressed than a tenth reduction of gravitational accelerations in a horizontal orientation. For crystal growth parameters under consideration, the greater uniformity in the growth rate is obtained for either solutal convection mode in a vertical orientation or thermal convection mode in horizontal geometry. The growth rate is also found to be first order exponentially decayed for $10{\leq}P_B{\leq}200$ Torr.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.6
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• pp.225-231
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• 2008

For an aspect ratio (transport length-to-width) of 5, Pr=1.13, Le=1.91, Pe=4.3, Cv=1.01, $P_B=20\;Torr$, the effects of addition of inert gas Ne on thermally buoyancy-driven convection ($Gr=2.44{\times}10^3$) are numerically investigated for further understanding and insight into essence of transport phenomena in two dimensional horizontal enclosures. For $10K{\leq}{\Delta}T{\leq}50\;K$, the crystal growth rate increases from 10 K up to 20 K, and then is slowly decreased until ${\Delat}T=50\;K$, which is likely to be due to the effects of thermo-physical properties stronger than the temperature gradient corresponding to driving force for thermal convection. The dimensional maximum velocity gratitude reflecting the intensity of thermal convection is directly and linearly proportional to the temperature difference between the source and crystal regions. The rate is first order-exponentially decreased for $2{\leq}Ar{\leq}5$. This is related to the finding that the effects of side walls tend to stabilize convection in the growth reactor. In addition, the rate is first order exponentially decayed for $10{\leq}P_B{\leq}200\;Torr$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.5
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• pp.203-209
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• 2006

For $P_B=50,\;{\Delta}T=10K$, Ar=5, Pr=2.36, Le=0.015, Pe=1.26, Cv=1.11, the intensity of solutal convection (solutal Grashof number $Grs=3.44x10^4$) is greater than that of thermal convection (thermal Grashof number $Grt=1.81x10^3$) by one order of magnitude, which is based on the solutally buoyancy-driven convection due to the disparity in the molecular weights of the component A($Hg_2Cl_2$) and B(He). With increasing the partial pressure of component B from 10 up to 200 Torr, the rate is decreased exponentially. The convective transport decreases with lower g level and is changed to the diffusive mode at 0.1 $g_0$. In other words, for regions in which the g level is 0.1 $g_0$ or less, the diffusion-driven convection results in a parabolic velocity profile and a recirculating cell is not likely to occur. Therefore a gravitational acceleration level of less than 0.1 $g_0$ can be adequate to ensure purely diffusive transport.

• Proceedings of the KSME Conference
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• 2003.11a
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• pp.73-78
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• 2003

The InP thin films grown by metalorganic chemical vapor deposition (MOCVD) are widely used to optoelectronic devices such as laser diodes, wave-guides and optical modulators. Effects of various parameters controlling film growth rate such as gas-phase reaction rate constant, surface reaction rate constant and mass diffusivity are numerically investigated. Results show that at the upstream region where film growth rate increases with the flow direction, diffusion including thermal diffusion plays an important role. At the downstream region where the growth rate decreases with flow direction, film deposition mechanism is revealed as a mass-transport limited. Mass transport characteristics are also studied using systematic analyses.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.3
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• pp.107-114
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• 2019

A computational analysis has been carried out to get a thorough and full understanding on the effects of convective process parameters on double-diffusive convection during the growth of mercurous bromide ($Hg_2Br_2$) crystals on earth and under ${\mu}g$ conditions. The dimensional maximum magnitude of velocity vector, ${\mid}U{\mid}_{max}$ decreases much drasticlly near Ar = 1, and, then since Ar = 2, decreases. The ${\mu}g$ conditions less than $10^{-2}g$ make the effect of double-diffusion convection much reduced so that adequate advective-diffusion mass transfer could be obtained.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.1
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• pp.39-47
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• 2009

The effects of thermo-solutal convection on mercurous chloride system of ${Hg_2}{Cl_2}$, and Ne during physical vapor transport are numerically investigated for further understanding and insight into essence of transport phenomena, For $10\;K{\le}{\Delta}T{\le}30\;K$, the growth rate slowly increases and, then is decreased gradually until ${\Delta}T$=50 K, The occurrence of this critical point near at ${\Delta}T$=30 K is likely to be due to the effects of thermo-physical properties stronger than the temperature gradient corresponding to driving force for thermal convection. For the range of $10\;Torr{\le}P_B{\le}300\;Torr$, the rate is second order-exponentially decayed with partial pressures of component B, $P_B$. For the range of $5{\le}M_B{\le}200$, the rate is second order-exponentially decayed with a function of molecular weight of component B, $M_B$. Like the case of a partial pressure of component B, the effects of a molecular weight arc: reflected through the binary diffusivity coefficients, which are intimately related with suppressing the convection flow inside the growth enclosure, i,e., transition from convection to diffusion-dominant flow mode as the molecular weight of B increases. The convective mode is near at a ground level, i,e., on earth (1 $g_0$), and the convection is switched to the diffusion mode for $0.1\;g_0{\le}g{\le}10^{-2}g_0$, whereas the diffusion region ranges from $10^{-2}g_0$ up to $10^{-5}g_0$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.4
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• pp.172-183
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• 2009

For the effects of the nonlinear temperature profiles and reduced-gravity conditions we conduct a two-dimensional numerical modeling and simulations on the physical vapor transport processes of $Hg_2Cl_2-Xe$ system in the horizontal orientation position. Our results reveal that: (1) A decrease in aspect ratio from 5 to 2 leads to an increasingly nonuniform interfacial distribution and enhances the growth rate by one-order magnitude for normal gravity and linear wall temperature conditions. (2) Increasing the molecular weight of component B, Xenon results in a reduction in the effect of solutal convection. (3) The effect of aspect ratio affects the interfacial growth rates significantly under normal gravity condition rather than under reduced gravitational environments. (4) The transition from the convection-dominated regime to the diffusion-dominated regime ranges arises near at 0.1g$_0$ for operation conditions under consideration in this study.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.3
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• pp.127-136
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• 2021

This paper is dedicated to numerical simulation for diffusion-advective convection in a square cavity during physical vapor transport of Hg₂Br₂. Flow characteristics of the temperature difference between the source and crystal regions, 50℃ (300℃ → 250℃), partial pressures of component argon of 20 Torr and 100 Torr are investigated and presented as velocity vectors and streamlines, isotherms and iso-mass concentrations contours. Moreover, alterations of average Nusselt and average Sherwood numbers with (a) the source and crystal regions, (b) the pressures of component argon of 20 Torr and 100 Torr are analyzed and addressed in details. Both average Nusselt and average Sherwood numbers are seen to decrease with the increasing values of the partial pressures of component argon. Also, it is found that for the two different partial pressures of component argon, average Nusselt numbers at the source region are greater than at the crystal region, and inversely, average Sherwood numbers at the crystal region are greater than the source region by a factor of 3.