• 한국연소학회:학술대회논문집
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• 한국연소학회 2012년도 제45회 KOSCO SYMPOSIUM 초록집
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• pp.137-138
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• 2012

The two-equation soot model based on the transient laminar flamelet model is implemented for soot formation of laminar non-premixed $CH_4/Air$ flame with detailed chemical reaction mechanism and complex thermodynamic properties. The soot model represents nucleation, growth and oxidation with gas-phase chemistry. This represented unsteady flamelet soot model has been tested and compared using well verified reference calculation result obtained solving the Full Transport Equations method.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1500-1502
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• 2001

Plate-type ${\beta}-FeSi_2$ single crystals were grown using $FeSi_2$, Fe, and Si as starting materials by the chemical transport reaction method. The ${\beta}-FeSi_2$ single crystal was an orthorhombic structure. The direct optical energy gap was found to be 0.87eV at 300K. Hall effect shows a n-type conductivity in the ${\beta}-FeSi_2$ single crystal. The electrical resistivity values was 1.608$\Omega$cm and electron mobility was $3{\times}10^{-1}cm^2/V{\cdot}sec$ at room temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.42-46
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• 2000

${\beta}{\cdot}In_2S_3$ 및 ${\beta}{\cdot}In_2S_3:Co^{2+}$ 은 $In_2S_3$+S+ZnS를 출발물질로 하여 ($ZnCl_2+I_2$)를 수송매체로 사용한 chemical transport reaction method로 성장시켰다. 성장된 단결정은 tetragonal structure를 갖고 298K에서 indirect optical energy gap은 2.240eV, 1.814eV로 각각 주어졌고, direct optical energy gap은 2.639eV, 2.175eV로 각각 주어졌다. ${\beta}{\cdot}In_2S_3:Co^{2+}$ single crystal에서 impurity optical absorption peak가 나타났으며, 이들 peaks의 origin은 $Co^{2+}(Td)$ ion의 energy level 간의 electron transition임을 crystal field theory를 적용하여 규명하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.156-156
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• 2008

Single crystal of $In_2S_3$ and $In_2S_3:Co^{2+}$ were grown successfully with a good quality by the CTR(Chemical Transport Reaction)method. XRD analysis showed that the grown In2S3 and $In_2S_3:Co^{2+}$ single crystals were cubic structure. The optical absorption spectra of $In_2S_3:Co^{2+}$ single crystal showed impurity absorption peaks due to cobalt impurity. These impurity absorption pesks were assigned to the ligand transition between the split energy levels of $Co^{2+}$ ions with $T_d$ symmetry of these semiconductor host lattice.

• 한국진공학회지
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• 제6권1호
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• pp.50-60
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• 1997

순수한 $ZnAl_2S_4,;ZnAl_2Se_4,;CdAl_2S_4,;and;CdAl_2Se_4$ 및 cobalt와 erbium을 불순물로 첨가 한 이들 단결정을 화학수송법으로 성장시켰다. 성장된 단결정의 결정구조, 격자상수, 광학적 energy gap, photoluminescence 특성 등을 측정하여 광학적 전이 기구를 규명하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.607-608
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• 2005

In this paper, author describe the undoped and $Co^{2+}$(0.5mole%) doped $Cd_4SnSe_6$ single crystals were grown by the chemical transport reaction(CTR) method. The grown single crystals crystallize in the monoclinic structure of space group Cc and have the direct band gap structure. The energy gaps of them are 1.68 eV for $Cd_4SnSe_6$ and 1.50 eV for $Cd_4SnSe_6:Co^{2+}$ at 300K respectively.

• 한국진공학회지
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• 제4권3호
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• pp.334-341
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• 1995

IB-AI-VIB2 및 IB-AI-VIB2 :Co2+ 결정을 고순도 원소를 출발 물질로 하고 iodine을 수송 매체로 사용하여 chemical transport reaction method로 성장시켰다. 성장된 결정의 결정구조는 chalcopyrite 구조였으며, energy gap은 direct band gap으로 3.514~1.814 eV 정도로 주어졌으며, cobalt를 불순물로 첨가할 때 energy gap은 감소하였다. IB-AI-VIB2 :Co2+ 결정에서 첨가된 cobalt가 모체결정의 Td symmetry site에 Co2+ ion으로 위치하여, Co2+ ion의 energy 준위 사이의 전자전이에 기인하는 불순물 광흡수 peaks가 나타났다. 이 불순물 광흡수 peaks에 결정장 이론을 적용하여 구산 1st-order spin-orbit coupling parameter(λ)는 -183~ -189cm-1정도였고, 2nd-order spin-orbit coupling parameter(P)는 225~239 cm-1정도였으며, crystal field parameter(Dq)는 328~395cm-1, Racah parameter(B)는 531~552cm-1정도였다.

• 한국전산유체공학회:학술대회논문집
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• 한국전산유체공학회 2008년도 춘계학술대회논문집
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• pp.666-669
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• 2008

Droplet in miniaturized microfluidic systems have received much focused attention recently. In this work, electrical charging phenomenon of a conducting water droplet on the electrode under the dc electric field is studied and using this phenomenon droplet actuation method for microreactor applications is experimentally demonstrated. To find effects of key factors, the effects of electric field, medium viscosity, and droplet size are investigated. A scaling law of charging for the conducting droplet is derived from the experimental results. Unlike the case of a perfect conductor, the estimated amount of electrical charge ($Q_{est}$) of a water droplet is proportional to the 1.59 power of the droplet radius (R) and the 1.33 power of the electric field strength (E). (For a spherical perfect conductor, Q is proportional to R2 and E.) It is thought that the differences are mainly due to incomplete charging of a water droplet resulted from the combined effect of electrochemical reaction at electrode and the relatively low conductivity of water. Using this phenomenon, we demonstrate the transport of the charged droplet and fusion of two oppositely-charged droplets. When electric field is subjected sequentially on the electrode, the charged droplet is transported on the electrode. For the visualization of fusion of charged droplets, the precipitation reaction is used. When subjected to a DC voltage, two droplets charged are moving and merging toward each other due to the Coulombic force and chemical reaction is simultaneously occurred by coalescence of droplets. It may be due to the interchange effect of charge. It is shown that the droplet can be used for microreactor where transporting, merging etc. of reagents constitute unit operation.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.434-437
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• 2005

Chemical Mechanical Polishing (CMP) has become an essential step in the overall semiconductor wafer fabrication technology. In general, CMP is a surface planarization method in which a silicon wafer is rotated against a polishing pad in the presence of slurry under pressure. The polishing pad, generally a polyurethane-based material, consists of polymeric foam cell walls, which aid in removal of the reaction products at the wafer interface. It has been found that the material removal rate of any polishing pad decreases due to the so-called 'pad glazing' after several wafer lots have been processed. Therefore, the pad restoration and conditioning has become essential in CMP processes to keep the urethane polishing pad at the proper friction coefficient and to allow effective slurry transport to the wafer surface. Diamond pad conditioner employs a single layer of brazed bonded diamond crystals. Due to the corrosive nature of the polishing slurry required in low pH metal CMP such as copper, it is essential to minimize the possibility of chemical interaction between very low pH slurry (pH <2) and the bond alloy. In this paper, we report an exceptional protective coated conditioner for in-situ pad conditioning in low pH Cu CMP process. The protective Cr-coated conditioner has been tested in slurry with pH levels as low as 1.5 without bond degradation.

• 한국잡초학회지
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• 제13권2호
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• pp.81-88
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• 1993

광합성 전자전달저해제의 탐색을 위한 biorational biorational screening 방법으로 광합성 박테리아의 일종인 cyanobacteria의 표준형과 $D_1$단백질의 구성 아미노산이 변환된 변이주 Di-1, G-264, Di-22, TRY-5를 사용하여 기존 약제의 혼합효과와 몇가지 합성화합물의 Hill반응 저해활성을 측정 조사하였고, 또한 시금치로 부터 분리한 chloroplast와 cyanobacteria로 부터 분리한 thylakoid membrane에 대한 기존 제초제의 반응성을 조사하였다. 1. 광합성억제형 제초제에 대한 반응성 비교에서 cyanobacteria로 부터 분리한 thylakoid membrane이 시금치로 부터 분리한 chloroplast보다 약제에 대하여 민감한 반응을 나타내어 광합성 전자전달저해제의 탐색을 위한 재료로 보다 적합하였다. 2. Diuron에 대하여 wild type보다 Di-22와 D-5 변이주는 각각 약 2,000배와 800배의 저항성을 나타내었고 atrazine에 대하여는 G-264 변이주만이 약 1,000배의 저항성을 나타내었으며, 기타 네 약제에 대하여는 뚜렷한 저항성을 나타내는 변이주가 없었다. 3. D1 단백절의 264번 위치의 serine이 다른 아미노산으로 치환된 Di-1과 D-22 및 G-264 변이주에 대한 diuron과 atrazine의 혼합처리 효과를 검토한 결과 상호 경합적으로 작용하였으며 그 정도는 G-264 변이주에 대해서 가장 뚜렷하게 나타났다. 그러나 diurone과 atrazine의 혼합처리에 의한 thermoluminescence band의 변화는 인정할 수 없었다. 4. 변이주 Di-1과 D-22는 dinoseb에 대해서 저항성을 나타내지 않았으나. dinoseb과 diuron의 혼합처리시 diuron에 대한 저항성이 크게 약화되었다.