• Title/Summary/Keyword: chemical oxide

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Heat Resistant Low Emissivity Oxide Coating on Stainless Steel Metal Surface and Characterization of Emissivity (스테인리스강 금속 표면에 내열 저방사 산화물 코팅제 적용과 방사 특성 평가)

  • Lim, Hyung-Mi;Kwon, Tae-Il;Kim, Dae-Sung;Lee, Sang-Yup;Kang, Dong-Pil;Lee, Seung-Ho
    • Korean Journal of Materials Research
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    • v.19 no.12
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    • pp.649-656
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    • 2009

  • Inorganic oxide colloids dispersed in alcohol were applied to a stainless steel substrate to produce oxide coatings for the purpose of minimizing emissive thermal transfer. The microstructure, roughness, infrared emissive energy, and surface heat loss of the coated substrate were observed with a variation of the nano oxide sol and coating method. It was found that the indium tin oxide, antimony tin oxide, magnesium oxide, silica, titania sol coatings may reduce surface heat loss of the stainless steel at 300${\circ}C$. It was possible to suppress thermal oxidation of the substrate with the oxide sol coatings during an accelerated thermal durability test at 600${\circ}C$. The silica sol coating was most effective to suppress thermal oxidation at 600${\circ}C$, so that it is useful to prevent the increase of radiative surface heat loss as a heating element. Therefore, the inorganic oxide sol coatings may be applied to improve energy efficiency of the substrate as the heating element.

  • https://doi.org/10.3740/MRSK.2009.19.12.649 인용 PDF KSCI

Vertical Growth of Amorphous SiOx Nano-Pillars by Pt Catalyst Films (Pt 촉매 박막을 이용한 비정질 SiOx 나노기둥의 수직성장)

  • Lee, Jee-Eon;Kim, Ki-Chul
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.19 no.1
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    • pp.699-704
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    • 2018

  • One-dimensional nanostructures have attracted increasing attention because of their unique electronic, optical, optoelectrical, and electrochemical properties on account of their large surface-to-volume ratio and quantum confinement effect. Vertically grown nanowires have a large surface-to-volume ratio. The vapor-liquid-solid (VLS) process has attracted considerable attention for its self-alignment capability during the growth of nanostructures. In this study, vertically aligned silicon oxide nano-pillars were grown on Si\$SiO_2$(300 nm)\Pt substrates using two-zone thermal chemical vapor deposition system via the VLS process. The morphology and crystallographic properties of the grown silicon oxide nano-pillars were investigated by field emission scanning electron microscopy and transmission electron microscopy. The diameter and length of the grown silicon oxide nano-pillars were found to be dependent on the catalyst films. The body of the silicon oxide nano-pillars exhibited an amorphous phase, which is consisted with Si and O. The head of the silicon oxide nano-pillars was a crystalline phase, which is consisted with Si, O, Pt, and Ti. The vertical alignment of the silicon oxide nano-pillars was attributed to the preferred crystalline orientation of the catalyst Pt/Ti alloy. The vertically aligned silicon oxide nano-pillars are expected to be applied as a functional nano-material.

  • https://doi.org/10.5762/KAIS.2018.19.1.699 인용 PDF KSCI

Synthesis of ITiO(Indium Titanium Oxide) particle by sol-gel and investigation on light transmittance of deposited ITiO thin film (졸-겔법에 의한 ITiO(Indium Titanium Oxide) 입자의 합성과 ITiO 박막의 광투과도 조사)

  • Go, Eun Ju;Kim, Sang Hern
    • Journal of the Korean Applied Science and Technology
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    • v.34 no.4
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    • pp.705-716
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    • 2017

  • In this study, Indium-Titanium hydroxide particle with 0.5, 1.0, 1.5 wt% of $TiO_2$ were synthesized by sol process and adding the base, ITiO(Indium Titanium Oxide) particles were obtained by gelling at $200^{\circ}C$ and $500^{\circ}C$. The ITiO particle's size with gel process at $200^{\circ}C$ was smaller than ITiO particle's size with gel process $500^{\circ}C$. The ITiO particle with gel process at $200^{\circ}C$ was used to fabricate dense ITiO target. ITiO targets with 0.5, 1.0, 1.5 wt% of $TiO_2$ were fabricated and used to obtain ITiO thin films onto glass by sputtering. Among those sputtered ITiOs' thin films, ITiO thin film with 0.4 % of $O_2$ and 0.5 wt% of $TiO_2$ showed the lowest specific resistance, highest charge mobility and lowest carrier concentration. It was found the light transmittance of the ITiO film were increased highly compared to light transmittance of ITO (Indium Tin Oxide) thin film over Infrared wavelength ranges.

  • https://doi.org/10.12925/jkocs.2017.34.4.705 인용 PDF KSCI