• Journal of the Korean Electrochemical Society
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• v.12 no.3
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• pp.251-257
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• 2009

In this study, we fabricated nickel oxide thin film for lithium based electrolyte using sol-gel method. This film was deposited by dip-coating method with mixed solvent of DameH (N,N-dimethylaminoethanol) and DI water. As changing the ratio between DmaeH and DI water, nickel oxide thin film was presented in different charge density and optical transmittance because they were shown various thickness. It was accounted for changing viscosity and density by the ratio of DmaeH and DI water. The thin film synthesized with 1 : 1 ratio of DmaeH and DI water was expressed best electrochromic performance in lithium based electrolyte, because of thick thickness but porous structures.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.303.2-303.2
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• 2014

The oxides of group IV transition metals such as titanium, zirconium, hafnium have many important current and future application, including protective coatings, sensors and dielectric layers in thin film electroluminescent (TFEL) devices. Recently, group IV transition metal oxide films have been intensively investigated as replacements for SiO2. Due to high permittivities (k~14-25) compared with SiO2 (k~3.9), large band-gaps, large band offsets and high thermodynamic stability on silicon. Herein, we report the synthesis of new group IV transition metal complexes as useful precursors to deposit their oxide thin films using chemical vapor deposition technique. The complexes were characterized by FT-IR, 1H NMR, 13C NMR and thermogravimetric analysis (TGA). Newly synthesised compounds show high volatility and thermal stability, so we are trying to deposit metal oxide thin films using the complexes by Atomic Layer Deposition (ALD).

• Proceedings of the KAIS Fall Conference
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• 2011.05a
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• pp.327-331
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• 2011

Zinc oxide (5, 10 and 15 wt%) impregnated NaZSM-5 zeolite synthesized using rice husk ash as silica source was tested for $CO_2$ adsorption. The materials were characterized by XRD, SEM-EDS, $CO_2$-TPD and BET techniques. The heat of the reaction (${\Delta}$Hr) derived from DSC for ZnO(10%)/NaZSM-5 was found to be 495 Btu/lb and the maximum $CO_2$ adsorption capacity of ZnO(10%)/NaZSM-5 is 140 mg/g of sorbent. Extraction of silica from the agricultural waste, rice husk and its use in the zeolite synthesis is an added advantage in this study. Hence, from the study it is concluded that zinc oxide impregnated NaZSM-5 could be treated as novel material for $CO_2$ adsorption as they were found to be regenerable, selective and recyclable.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.122-122
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• 2000

Magnesium oxide is thermodynamically very stable, has a low dielectric constant and a low refractive index, and has been widely used as substrate for growing various thin film materials, particulary oxides of the perovskite structure. There has been a considerable interest in integrating the physical properties of these oxides with semiconductor materials such as GaAs and Si. In this regard, it is considered very important to be able to grow MgO buffer layers epitaxially on the semiconductors. Various oxide films can then be grown on such buffer layers eliminating the need for using MgO single crystal substrates. Vapor phase epitaxy of magnesium oxide has been accomplished on Si(001) substrates in a high vacuum chamber using the single precursor methylmagnesium tert-butoxide in the temperature range 750-80$0^{\circ}C$. For the epitaxy of the MgO films, SiC buffer layers had to be grown on Si(001). The films were characterized by reflection high energy electron diffraction (RHEED) in situ in the growth chamber, and x-ray diffraction (XRD), x-ray pole figure analysis, scanning electron microscopy (SEM), and x-ray photoelectron spectroscopy (XPS) after the growth.

• 한국생물공학회:학술대회논문집
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• 2005.04a
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• pp.334-334
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• 2005

• Bulletin of the Korean Chemical Society
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• v.30 no.2
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• pp.297-301
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• 2009

We have developed the yttrium oxide (YNP) or ytterbium oxide (YbNP) nanoparticle/polymer matrices for the size-dependent separation of DNA ranging from 100 bp to 9,000 bp. High separation efficiency (> $10^6$ plates/m) and the baseline resolution for various DNA standards (100 bp, 500 bp, and 1 kbp DNA ladder) were obtained in 10 min with these matrices. The effects of concentrations of both polyethylene oxide (PEO) and nanoparticles were investigated and the highest performance was obtained at 0.02% PEO with 0.02% YNP or YbNP. Similar sieving power for both YNP and YbNP matrices was observed probably due to the similar sizes of nanoparticles, resulting in the formation of comparable sieving networks for DNA separation. For the reduction of electrosmotic flow, either dynamic or permanent coating of the capillary inner wall was compared and it turned out that PEO was superior to polyvinylpyrrolidone (PVP) or polyacrylamide (PAA) for better separation efficiency.

• Korean Chemical Engineering Research
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• v.48 no.2
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• pp.218-223
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• 2010

The zinc oxide thin film, which can be applied as the gas sensor of a semiconductor type, was grown on the silicon substrate by CFR(continuous flow reaction) method in this study. The growth property and the electrical property of the zinc oxide thin films synthesized by CFR method were also investigated. Zinc acetate solutions of 0.005~0.02 M were used as the precursor for the preparation of zinc oxide thin films. The size of ZnO particles consisted on the zinc oxide thin film increased not only with increasing concentration of precursor, but also the thickness of thin film increased. The growth rate of zinc oxide thin film by CFR method was proportionably depend on the concentration of precursor and the uniform ZnO thin film was prepared when zinc acetate of 0.01 M is used as the precursor. The charged currents on the zinc oxide thin films were obtained as its electrical property by I-V meter, and increased agree with increasing the thickness of zinc oxide thin film. Thus, it was concluded that the charged current on the zinc oxide thin film can be controlled with changing concentration of precursor solution in CFR method. The charged currents on the zinc oxide thin films also decreased when ZnO thin film is exposed under hydrogen sulfide of 500 ppmv at $300^{\circ}C$ for 5 min. From these results, it could be confirmed that the zinc oxide thin film prepared by CFR method can be used for the detection of sulfur compounds.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.253-253
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• 2012

Low temperature SiOx film process has being required for both silicon and oxide (IGZO) based low temperature thin film transistor (TFT) for application of flexible display. In recent decades, from low density and high pressure such as capacitively coupled plasma (CCP) type plasma enhanced chemical vapor deposition (PECVD) to the high density plasma and low pressure such as inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) have been used to researching to obtain high quality silicon oxide (SiOx) thin film at low temperature. However, these plasma deposition devices have limitation of controllability of process condition because process parameters of plasma deposition such as RF power, working pressure and gas ratio influence each other on plasma conditions which non-leanly influence depositing thin film. In compared to these plasma deposition devices, neutral beam assisted chemical vapor deposition (NBaCVD) has advantage of independence of control parameters. The energy of neutral beam (NB) can be controlled independently of other process conditions. In this manner, we obtained NB dependent high crystallized intrinsic and doped silicon thin film at low temperature in our another papers. We examine the properties of the low temperature processed silicon oxide thin films which are fabricated by the NBaCVD. NBaCVD deposition system consists of the internal inductively coupled plasma (ICP) antenna and the reflector. Internal ICP antenna generates high density plasma and reflector generates NB by auger recombination of ions at the surface of metal reflector. During deposition of silicon oxide thin film by using the NBaCVD process with a tungsten reflector, the energetic Neutral Beam (NB) that controlled by the reflector bias believed to help surface reaction. Electrical and structural properties of the silicon oxide are changed by the reflector bias, effectively. We measured the breakdown field and structure property of the Si oxide thin film by analysis of I-V, C-V and FTIR measurement.

• Korean Chemical Engineering Research
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• v.46 no.2
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• pp.408-413
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• 2008

In this work, the use of LPRTO (low pressure rapid thermal oxidation) and remote plasma oxidation was evaluated for the preparation of ultra thin silicon oxide layer with less than 5 nm. The silicon oxide thickness grown by LPRTO was rapidly increased and saturated. The maximum thickness could be controlled at about 5 nm. As RF power and oxygen flow rate at a remote plasma oxidation increased, the behavior of oxide growth was almost the same as that of LPRTO. The oxide thickness of 4 nm was the maximum obtained by a remote plasma oxidation in this work. The quality of silicon oxide grown by LPRTO was comparable to the thermally grown conventional oxide.

• Carbon letters
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• v.12 no.3
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• pp.138-142
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• 2011

Poly(vinyl alcohol) (PVA) composites with various graphite oxide (GO) contents (0 to 10 wt%) were prepared by sonicating the mixture of PVA and GO, followed by crosslinking with glutaraldehyde. GO was pre-treated with oxyfluorination ($O_2:F_2$ = 8:2) in order to modify the surface of GO to allow it to carry hydrophilic functional groups. PVA/GO composite hydrogels were characterized by scanning electron microscopy and Fourier-transform infrared spectrometer (FT-IR). The morphology of the PVA/GO composite hydrogels and the variations in soluble gel portion were investigated under various GO contents and UV irradiation doses. The variation in the chemical structure of photo degraded PVA/GO composite hydrogels was studied by FT-IR. The photochemical stability of PVA/GO composite hydrogels under UV irradiation was found to improve noticeably with increasing content of uniformly dispersed GO.